RB520S30T5G

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~Oonsem.MO~~ **30 VOLT SCHOTTKY** Schottky Barrier Diode 

## **30 VOLT SCHOTTKY BARRIER DIODE** 

## RB520S30T1G, RB520S30T5G 

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1 2<br>These Schottky barrier diodes are designed for high−speed CATHODE ANODE<br>switching applications, circuit protection, and voltage clamping.<br>Extremely low forward voltage reduces conduction loss. Miniature<br>surface mount package is excellent for hand−held and portable<br>2<br>applications where space is limited.<br>a<br>Features 1<br> Extremely Fast Switching Speed SOD−523<br> Extremely Low Forward Voltage 0.6 V (max) @ IF = 200 mA CASE 502<br> Low Reverse Current<br> ESD Rating: Class 3B per Human Body Model MARKING DIAGRAM<br>**----- End of picture text -----**<br>


- ESD Rating: Class 3B per Human Body Model Class C per Machine Model 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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5J M<br>1 2<br>5J = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation position may vary depending<br>upon manufacturing location.<br>**----- End of picture text -----**<br>


## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|30|Vdc|
|Forward Current DC|IF|200|mA|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

## **ORDERING INFORMATION** 

|**Characteristic**<br>~~ae~~<br>~~ee~~|**Symbol**<br>~~ae~~<br>~~ee~~<br>~~ee~~|**Max**<br>~~ae~~<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ae~~<br>|
|---|---|---|---|
|Total Device Dissipation FR−5 Board,<br>(Note 1) TA= 25C<br>Derate above 25C<br>~~ee~~|PD<br>~~ee~~<br>~~ee~~<br>~~ee~~|200<br>1.57<br>~~ee~~<br>~~ee~~<br>~~ee~~|mW<br>mW/C<br>|
|Thermal Resistance, Junction−to−Ambient<br>~~ee ~~<br>~~es~~|R JA<br>~~ee ~~<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~Gs~~|635<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~|C/W<br><br>~~es~~|
|Junction and Storage Temperature Range<br> <br>~~a~~|TJ, Tstg<br> ~~ee~~<br>~~ee~~<br>~~a~~<br>~~Gs~~|−55 to +150<br>~~ee ~~<br>~~ee~~<br>~~a~~<br>~~es~~|C<br> <br>~~a~~|
|Non−Repetitive Peak Forward<br>Current, tp< 10 msec<br>~~Pf~~|IFSM<br>~~Gs~~<br>~~Pf~~|600<br>~~es~~<br>~~Pf~~|mA<br>~~Pf~~|
|Repetitive Peak Forward Current<br>Pulse Wave = 1 sec, Duty Cycle =  66%<br>~~ee~~|IFRM<br>~~ee~~|300<br>~~ee~~|mA<br>~~ee~~|
|Thermal Resistance,<br>Junction−to−Ambient<br>~~Pt~~|R JA<br>~~Pt~~|635<br>~~Pt~~|C/W<br>~~Pt~~|



**Device Package Shipping**[†] RB520S30T1G SOD−523 4 mm Pitch (Pb−Free) 3000/Tape & Reel RB520S30T5G SOD−523 2 mm Pitch (Pb−Free) 8000/Tape & Reel ~~a~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) 

||~~es~~|~~ee~~|~~ee~~|~~es~~||
|---|---|---|---|---|---|
|**Characteristic**<br>~~es~~|**Symbol**<br>~~es~~<br>~~es~~|**Min**<br>~~es~~<br>~~ee~~|**Typ**<br>~~es~~<br>~~ee~~|**Max**<br>~~es~~<br>~~es~~|**Unit**<br>~~es~~|
|Reverse Leakage<br>(VR= 10 V)<br>~~Pd~~|IR<br>~~es ~~<br>~~Pd~~|−<br> ~~ee ~~<br>~~Pd~~|−<br> ~~ee ~~<br>~~Pd~~|1.0<br> ~~es~~<br>~~Pd~~|A<br>~~Pd~~|
|Forward Voltage<br>(IF= 200 mA)<br>~~a~~|VF<br>~~a~~|−<br>~~a~~|−<br>~~a~~|0.60<br>~~a~~|Vdc<br>~~a~~|



Publication Order Number: **RB520S30T1/D** 

**1** 

 Semiconductor Components Industries, LLC, 2011 **October, 2024 − Rev. 12** 

**RB520S30T1G, RB520S30T5G** 

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820 Q<br>+10 V 2 k<br>100 H IF 0.1 F t tp t IF<br>if] “T~ ak r  a<br>0.1 F m | 10% trr t<br>DUT<br>50  Output 50  Input 90%<br>Pulse Sampling iR(REC) = 1 mA<br>Generator Oscilloscope VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

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200 1000<br>100 TA =  150 C<br>100<br>T A  =  125 C<br>C 10<br>10<br>1.0<br><br>C T A  =  85 C<br>0.1<br>1.0 85 C<br>25 C − C − 55 C 0.01<br>T A = 25 C<br>0.1 w/AW Ane ae | 0.001 _——<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>14 25<br>Based on square wave currents<br>12 TJ = 25C prior to surge<br>20<br>10<br>| 15 a<br>8<br>t e e a<br>6 OA es es es es 10 VL<br>4<br>5<br>wt| tt INCI<br>2<br>0 eeoeee ee 0 STCOC<br>0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (VOLTS) tP, PULSE ON TIME (ms)<br>A)<br>, FORWARD CURRENT (mA)IF , REVERSE CURRENT (IR<br>, TOTAL CAPACITANCE (pF)T<br>C<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSM<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

**Figure 5. Forward Surge Current** 

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**2** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOD−523 1.20x0.80x0.60** CASE 502 ISSUE F 

## DATE 08 FEB 2024 

## **GENERIC** 

## **MARKING DIAGRAM*** 

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XX XX<br>1 2 1 2<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M  Date Code<br>M M<br>**----- End of picture text -----**<br>


- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

## **DOCUMENT NUMBER: 98AON11524D DESCRIPTION: SOD−523 1.20x0.80x0.60** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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