RB160M-40TR
Small Signal Schottky Diode, Single, 40 V, 1 A, 510 mV, 30 A, 150 °C
- Manufacturer: ROHM
- Product type:
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):1A; Forward Voltage VF Max:510mV; Forward Surge Current Ifsm Max:30A; Operating Temperature Max:150°C; Diode Ca
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 2Pins
- Product Range: RB160
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-123
- Diode Configuration: Single
- Forward Voltage Max: 510mV
- Forward Surge Current: 30A
- Reverse Recovery Time: -
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 40V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.081 € |
| Current stock | 10+ |
| Lead time | 30 days |
Data Sheet EE ## Schottky Barrier Diode ## **RB160M-40** ## **Applications** General rectification ## **Features** 1)Small power mold type.（PMDU） 2)Low IR 3)High reliability ## **Construction** Silicon epitaxial **==> picture [292 x 352] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions (Unit : mm) Land size figure (Unit : mm)<br>0.1±0.1<br>1.6±0.1 0.05 1.2<br>—<br>PMDU<br>zl - aa<br>0.9±0.1 Structure<br>ROHM : PMDU - 0.8±0.1 || Le<br>JEDEC :SOD-123<br>Manufacture Date<br> Taping specifications (Unit : mm)<br>rT 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1<br>1.81±0.1 —— 4.0±0.1 φ1.0±0.1 ao<br>1.5MAX<br>0.85<br>3.05<br>① 2.6±0.1 3.5±0.2<br>1.75±0.1<br>3.5±0.05 8.0±0.2<br>3.71±0.1<br>**----- End of picture text -----**<br> ## **Absolute maximum ratings** (Ta=25°C) |**Absolute maximum ratingsgss** (Ta=25°C)Ta=25°C))|||| |---|---|---|---| |Parameter|Symbol<br>~~—~~|Limits<br>~~—~~|Unit| |Reverse voltage(repetitive)|VRM<br>~~—~~|40<br>~~—~~|V| |Reverse voltage(DC)|VR<br>~~————~~|40<br>~~————~~|V| |Average rectified forward current|Io<br>~~————~~|1<br>~~————~~|A| |Forward current surgepeak（60Hz・1cyc）|IFSM<br>~~—~~|30<br>~~—~~|A| |Junction temperature|Tj<br>~~—~~|150<br>~~—~~|C| |Storage temperature|Tstg<br>~~—~~|40 to150<br>~~—~~|C| (*1)Mounted on epoxy board. 180°Half sine wave ## **Electrical characteristic** (Ta=25°C) |**Electrical characteristic** (Ta=25°C)Ta=25°C))||||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |Forward voltage|VF|-|0.46|0.51|V|IF=1.0A| |Reverse current|IR|-|4.0|30|μA|VR=40V| www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 **2011.04 - Rev.E** Data Sheet **RB160M-40** **==> picture [473 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Ta=75℃ 10000 Ta=125℃ 1000 f=1MHz<br>1000<br>Ta=125℃ Ta=75℃<br>100 100<br>Ta=150℃ 100<br>Ta=25℃ 10 Ta=25℃<br>Ta=-25℃ 1<br>10 10<br>0.1<br>Ta=-25℃<br>0.01<br>1 0.001 1<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30<br>FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)<br>VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS<br>480 30 300<br>470 Tan=30pcsVF==25℃1A 25 TanVR=30pcs==25℃40V 290280 Taf=1MHzVR==25℃0V<br>270 n=10pcs<br>20 AVE:279.7pF<br>460 260<br>15 250<br>450 240<br>AVE:454.3mV 10 AVE:4.08uA 230<br>440 220<br>5<br>210<br>430 0 200<br>VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP<br>200 30 100<br>Ta=25℃<br>Ifsm 1cyc 25 IF=0.5A<br>150 IR=1A 80<br>Irr=0.25*IR<br>8.3ms 20 n=10pcs<br>60<br>100 15<br>40<br>10<br>Ifsm<br>50<br>AVE:83.0A 5 AVE:10.4ns 20 8.3ms 8.3ms<br>1cyc<br>0 0 0<br>1 10 100<br>trr DISPERSION MAP NUMBER OF CYCLES<br>IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS<br>Mounted on epoxy board<br>200 1000 IM=10mA IF=0.5A 1<br>0.9<br>Rth(j-a)<br>Ifsm 0.8 D=1/2<br>150 t 100 1m s time<br>0.7<br>300us<br>0.6 DC<br>100 10 Rth(j-c) 0.5 Sin(θ＝180)<br>0.4<br>0.3<br>50 1 0.2<br>0.1<br>0 0<br>0.1 1 10 100 0.10.001 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 2<br>TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED<br>IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENT：Io(A)<br>Io-Pf CHARACTERISTICS<br>TERMINALS:Ct(pF)<br>FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN<br>TERMINALS:Ct(pF)<br>FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN<br>PEAK SURGE PEAK SURGE<br>FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A)<br>REVERSE RECOVERY TIME:trr(ns)<br>PEAK SURGE TRANSIENT<br>FORWARD POWER DISSIPATION:Pf(W)<br>FORWARD CURRENT:IFSM(A)<br>THAERMAL IMPEDANCE:Rth (℃/W)<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 **2011.04 - Rev.E** Data Sheet **RB160M-40** **==> picture [471 x 300] intentionally omitted <==** **----- Start of picture text -----**<br> 0.05 3 3<br>0.04 2.5 0A0V VRIo 2.5 0A0V VRIo<br>0.03 2 DC t T DVR=20VTj==t/T150℃ 2 DC t T DTVR=20Vj==150℃t/T<br>DC 1.5 1.5<br>0.02 D=1/2 D=1/2<br>D=1/2<br>1 1<br>0.01 Sin(θ＝180)<br>0.5 Sin(θ＝180) 0.5 Sin(θ＝180)<br>0<br>0 10 20 30 40 0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>REVERSE VOLTAGE:VR(V) AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:Tc(℃)<br>VR-PR CHARACTERISTICS Derating Curveﾞ(Io-Ta) Derating Curveﾞ(Io-Tc)<br>30<br>No break at 30kV<br>25<br>20<br>15<br>10<br>5<br>AVE:7.30kV<br>0<br>C=200pF C=100pF<br>R=0Ω R=1.5kΩ<br>ESD DISPERSION MAP<br>(W)<br>R<br>REVERSE POWER DISSIPATION:P AVERAGE RECTIFIED AVERAGE RECTIFIED<br>FORWARD CURRENT:Io(A) FORWARD CURRENT:Io(A)<br>ELECTROSTATIC<br>DISCHARGE TEST ESD(KV)<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 **2011.04 - Rev.E** Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at April 29, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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