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QS6M4TR
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.23 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ROHM
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.36ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSMT
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 900mW
- Power Dissipation P Channel: 1.25W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.5A
- Continuous Drain Current Id P Channel: 1.5A
- Drain Source On State Resistance N Channel: 0.23ohm
- Drain Source On State Resistance P Channel: 0.215ohm
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.131 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 20, 2026