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QS6M4TR
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.23 ohm
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- Manufacturer: ROHM
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.36ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSMT
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 900mW
- Power Dissipation P Channel: 1.25W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.5A
- Continuous Drain Current Id P Channel: 1.5A
- Drain Source On State Resistance N Channel: 0.23ohm
- Drain Source On State Resistance P Channel: 0.215ohm
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.131 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
QS6M4 Transistors ## 2.5V Drive Nch+Pch MOSFET ## **QS6M4** � **Structure** Silicon P-channel MOSFET Silicon N-channel MOSFET ## � **Features** - 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. - 2) Low on-state resistance with a fast switching. - 3) Low voltage drive (2.5V). **==> picture [99 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> � Dimensions (Unit : mm)<br>**----- End of picture text -----**<br> **==> picture [185 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> TSMT6<br>SOT-457T<br>1.0MAX<br>2.9<br>1.9 0.85<br>0.95 0.95 0.7<br>(6) (5) (4)<br>0~0.1<br>(1) (2) (3)<br>1pin mark<br>0.4 0.16<br>Each lead has same dimensions<br>Abbreviated symbol : M04<br>1.6 2.8<br>0.60.3~<br>**----- End of picture text -----**<br> ## � **Applications** Load switch, inverter ## � **Packaging specifications** |Type|Package|Taping| |---|---|---| ||Code|TR| ||Basic ordering unit (pieces)|3000| |QS6M4||| ## � **Absolute maximum ratings** (Ta=25°C) |Parameter||Symbol|Limits|Limits|Unit| |---|---|---|---|---|---| ||||Nchannel|Pchannel|| |Drain-source voltage||VDSS|30|−20|V| |Gate-source voltage||VGSS|±12|±12|V| |Drain current|Continuous|ID|±1.5|±1.5|A| ||Pulsed|IDP<br>∗1|±6.0|±6.0|A| |Source current<br>(Body diode)|Continuous|IS|0.8|−0.75|A| ||Pulsed|ISP<br>∗1|6.0|−6.0|A| |Total power dissipation||PD<br>∗2|1.25||W / TOTAL| ||||<br>0.9||W / ELEMENT| |Channel temperature||Tch|150||°C| |Storage temperature||Tstg|−55 to+150||°C| |∗1 Pw≤10µs, Duty cycle≤1%|||||| **==> picture [149 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> � Equivalent circuit<br>(6) (5) (4)<br>∗ 1<br>∗ 2 ∗ 2<br>∗ 1 (1) Tr1 (Nch) Source<br>(2) Tr1 (Nch) Gate<br>(3) Tr2 (Pch) Drain<br>(1) (2) (3)<br>(4) Tr2 (Pch) Source<br>∗ 1 ESD PROTECTION DIODE (5) Tr2 (Pch) Gate<br>∗ 2 BODY DIODE (6) Tr1 (Nch) Drain<br>**----- End of picture text -----**<br> - ∗ 2 Mounted on a ceramic board ## � **Thermal resistance** |�**Thermal resistance**|||| |---|---|---|---| |Parameter|Symbol|Limits|Unit<br>°C / W / TOTAL<br>°C / W / ELEMENT| |Channel to ambient|Rth (ch-a)<br>∗|100|| |||139|| - ∗ Mounted on a ceramic board Rev.B 1/5 QS6M4 Transistors ## � **Electrical characteristics** (Ta=25°C) <Tr1. N-ch MOSFET> |�**Electrical characteristics**(<br><Tr1. N-ch MOSFET>|Ta=25°C|Ta=25°C|Ta=25°C|)||||| |---|---|---|---|---|---|---|---|---| |Parameter|Symbol|||Min.|Typ.|Max.|Unit|Conditions| |Gate-source leakage|IGSS|||−|−|±10|µA|VGS=±12V/VDS=0V| |Drain-source breakdown voltage|V(BR) DSS|||30|−|−|V|ID=1mA/VGS=0V| |Zero gate voltage drain current|IDSS|||−|−|1|µA|VDS=30V/VGS=0V| |Gate threshold voltage|VGS (th)|||0.5|−|1.5|V|VDS=10V/ID=1mA| |Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|170|230|mΩ|ID=1.5A/VGS=4.5V| |||||−|180|245||ID=1.5A/VGS=4.0V| |||||−|260|360||ID=1.0A/VGS=2.5V| |Forward transfer admittance||Yfs|∗|1.0|−|−|S|VDS=10V / ID=1.0A| |Input capacitance|Ciss|||−|80|−|pF|VDS=10V<br>VGS=0V<br>f=1MHz| |Output capacitance|Coss|||−|25|−|pF|| |Reverse transfer capacitance|Crss|||−|15|−|pF|| |Turn-on delay time|td (on)<br>∗|||−|7|−|ns|VGS=4.5V<br>RL=15Ω /RG=10Ω<br>ID=1A, VDD15V| |Rise time|tr<br>∗|||−|18|−|ns|| |Turn-off delay time|td (off)<br>∗|||−|15|−|ns|| |Fall time|tf<br>∗|||−|15|−|ns|| |Total gate charge|Qg<br>∗|||−|1.6|−|nC|VDD15V<br>VGS=4.5V<br>RL=10Ω<br>RG=10Ω<br>ID=1.5A| |Gate-sourcecharge|Qgs<br>∗|||−|0.5|−|nC|| |Gate-draincharge|Qgd<br>∗|||−|0.9|−|nC|| ∗ Pulsed ## � **Body diode characteristics** (Source-Drain) <Tr1. N-ch MOSFET> |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Forward voltage|VSD<br>∗|−|−|1.2|V|IS=3.2A / VGS=0V| ∗ Pulsed Rev.B 2/5 QS6M4 Transistors ## � **Electrical characteristics** (Ta=25°C) <Tr2. P-ch MOSFET> |�**Electrical characteristics**(<br><Tr2. P-ch MOSFET>|Ta=25°C|Ta=25°C|Ta=25°C|)||||| |---|---|---|---|---|---|---|---|---| |Parameter|Symbol|||Min.|Typ.|Max.|Unit|Conditions| |Gate-source leakage|IGSS|||−|−|±10|µA|VGS= ±12V / VDS=0V| |Drain-source breakdown voltage|V(BR) DSS|||−20|−|−|V|ID= −1mA / VGS=0V| |Zero gate voltage drain current|IDSS|||−|−|−1|µA|VDS= −20V / VGS=0V| |Gate threshold voltage|VGS (th)|||−0.7|−|−2.0|V|VDS= −10V / ID=−1mA| |Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|155|215|mΩ|ID= −1.5A / VGS= −4.5V| |||||−|170|235||ID= −1.5A / VGS= −4.0V| |||||−|310|430||ID= −0.75A / VGS= −2.5V| |Forward transfer admittance||Yfs|∗|1.0|−|−|S|VDS= −10V / ID= −0.75A| |Input capacitance|Ciss|||−|270|−|pF|VDS= −10V<br>VGS=0V<br>f=1MHz| |Output capacitance|Coss|||−|40|−|pF|| |Reverse transfer capacitance|Crss|||−|35|−|pF|| |Turn-on delay time|td (on)<br>∗|||−|10|−|ns|VGS= −4.5V<br>RL=20Ω/ RG=10Ω<br>ID= −0.75A, VDD −15V| |Rise time|tr<br>∗|||−|12|−|ns|| |Turn-off delay time|td (off)<br>∗|||−|45|−|ns|| |Fall time|tf<br>∗|||−|20|−|ns|| |Total gate charge|Qg<br>∗|||−|3.0|−|nC|VDD −15V<br>VGS= −4.5V<br>ID= −1.5A<br>RL=10Ω<br>RG=10Ω| |Gate-sourcecharge|Qgs<br>∗|||−|0.8|−|nC|| |Gate-draincharge|Qgd<br>∗|||−|0.85|−|nC|| |∗Pulsed||||||||| ## � **Body diode characteristics** (Source-Drain) ## <Tr2. P-ch MOSFET> |<Tr2. P-ch MOSFET>||||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |Forward voltage|VSD|−|−|−1.2|V|IS= −0.75A / VGS=0V| Rev.B 3/5 QS6M4 ## Transistors ## **N-ch** ## � **Electrical characteristic curves** **==> picture [424 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 Ta = 25 ° C 1000 Ta = 25 ° C 6 Ta = 25 ° C<br>f = 1MHz VDD = 15V VDD = 15V<br>VGS = 0V tf VGS = 4.5V 5 ID = 1.5A<br>RG = 10 Ω RG = 10 Ω<br>Ciss Pulsed Pulsed<br>100 100 4<br>Crss<br>Coss td (off) 3<br>10 10 td (on) 2<br>tr 1<br>1 1 0<br>0.01 0.1 1 10 100 0.01 0.1 1 10 0 0.5 1.0 1.5 2.0<br>DRAIN-SOURCE VOLTAGE : VDS (A) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC)<br> (V)<br>GS<br>CAPACITANCE : C (pF) SWITCHING TIME : t (ns) GATE-SOURCE VOLTAGE : V<br>**----- End of picture text -----**<br> Fig.1 Typical Capacitance vs. Drain-Source Voltage **==> picture [107 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.2 Switching Characteristics<br>**----- End of picture text -----**<br> **==> picture [112 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.3 Dynamic Input Characteristics<br>**----- End of picture text -----**<br> **==> picture [429 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> 10 VDS = 10V 1.0 Ta = 25 ° C 10 VGS = 0V<br>Pulsed 0.9 Pulsed Pulsed<br>1 TaTaTaTa ==== − 125752525 °° CC °° CC 0.80.70.6 IIDD == 1.5A0.75A 1 TaTaTaTa ==== − 125752525 °° CC °° CC<br>0.1 0.5<br>0.4<br>0.1<br>0.3<br>0.01<br>0.2<br>0.1<br>0.001 0.0 0.01<br>0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5<br>GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V)<br>Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source Fig.6 Source Current vs.<br>On-State Resistance vs. Source-Drain Voltage<br>Gate-Source Voltage<br>10 10 10<br>VGS = 4.5V VGS = 4.0V VGS = 2.5V<br>Pulsed Pulsed Pulsed<br>1 TaTaTaTa ==== − 125752525 °° CC °° CC 1 TaTaTaTa ==== − 125752525 °° CC °° CC 1 TaTaTaTa ==== − 125752525 °° CC °° CC<br>0.1 0.1 0.1<br>0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10<br>DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)<br>Fig.7 Static Drain-Source Fig.8 Static Drain-Source Fig.9 Static Drain-Source<br>On-State Resistance On-State Resistance On-State Resistance<br>vs. Drain Current ( Ι ) vs. Drain Current ( ΙΙ ) vs. Drain Current ( ΙΙΙ )<br>) Ω<br> (m<br>DRAIN CURRENT : I (A)D RDS (on) SOURCE CURRENT : I (A)s<br>STATIC DRAIN-SOURCE ON-STATE RESISTANCE :<br>) Ω ) Ω ) Ω<br> (m (m (m<br>DS (on) DS (on) DS (on)<br>R R R<br>STATIC DRAIN-SOURCE ON-STATE RESISTANCE : STATIC DRAIN-SOURCE ON-STATE RESISTANCE : STATIC DRAIN-SOURCE ON-STATE RESISTANCE :<br>**----- End of picture text -----**<br> Rev.B 4/5 QS6M4 ## Transistors ## **P-ch** ## � **Electrical characteristic curves** **==> picture [433 x 571] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 Ta = 25 ° C 1000 Ta = 25 ° C 8 Ta = 25 ° C<br>f = 1MHz VDD = − 15V 7 VDD = − 15V<br>VGS = 0V VGS = − 4.5V ID = − 1.5A<br>tf RG = 10 Ω 6 RG = 10 Ω<br>Ciss 100 Pulsed Pulsed<br>5<br>100 td (off) 4<br>td (on) 3<br>10<br>Coss 2<br>Crss tr<br>1<br>10 1 0<br>0.01 0.1 1 10 100 0.01 0.1 1 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>DRAIN-SOURCE VOLTAGE : − VDS (V) DRAIN CURRENT : − ID (A) TOTAL GATE CHARGE : Qg (nC)<br>Fig.1 Typical Capacitance Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics<br>vs. Drain-Source Voltage<br>10 VDS = − 10V 500 Ta = 25 ° C 10 Ta = 25 ° C<br>Pulsed Pulsed VGS = 0V<br>Pulsed<br>400<br>1 Ta = 125 ° C ID = − 1.5A<br>Ta = 75 ° C ID = − 0.75A 1<br>TaTa == − 2525 ° C ° C 300<br>0.1<br>200<br>0.1<br>0.01<br>100<br>0.0010.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 0 2 4 6 8 10 12 0.010.0 0.5 1.0 1.5 2.0<br>GATE-SOURCE VOLTAGE : − VGS (V) GATE-SOURCE VOLTAGE : − VGS (V) SOURCE-DRAIN VOLTAGE : − VSD (V)<br>Fig.4 Typical Transfer Characteristics<br>Fig.5 Static Drain-Source Fig.6 Source Current vs.<br>On-State Resistance vs. Source-Drain Voltage<br>Gate-Source Voltage<br>10000 10000 10000<br>VGS = − 4.5V VGS = − 4V VGS = − 2.5V<br>Pulsed Pulsed Ta = 125 ° C Pulsed<br>1000 TaTaTaTa ==== − 125752525 °° CC °° CC 1000 TaTaTaTa ==== − 125752525 °° CC °° CC 1000 TaTaTa === − 752525 °° CC ° C<br>100 100 100<br>100.1 1 10 100.1 1 10 100.1 1 10<br>DRAIN CURRENT : − ID (A) DRAIN CURRENT : − ID (A) DRAIN CURRENT : − ID (A)<br>Fig.7 Static Drain-Source Fig.8 Static Drain-Source Fig.9 Static Drain-Source<br>On-State Resistance On-State Resistance On-State Resistance<br>vs. Drain Current ( Ι ) vs. Drain Current ( ΙΙ ) vs. Drain Current ( ΙΙΙ )<br> (V)<br>GS<br>V<br>CAPACITANCE : C (pF) SWITCHING TIME : t (ns) −<br>GATE-SOURCE VOLTAGE :<br>) Ω<br> (m<br> (A)ID − RDS (on) (A)IS −<br>DRAIN CURRENT : SOURCE CURRENT :<br>STATIC DRAIN-SOURCE ON-STATE RESISTANCE :<br>) Ω ) Ω ) Ω<br> (m (m (m<br>DS (on) DS (on) DS (on)<br>R R R<br>STATIC DRAIN-SOURCE ON-STATE RESISTANCE : STATIC DRAIN-SOURCE ON-STATE RESISTANCE : STATIC DRAIN-SOURCE ON-STATE RESISTANCE :<br>**----- End of picture text -----**<br> Rev.B 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ## **ROHM** Customer Support System ## www.rohm.com **THE AMERICAS** / **EUPOPE** / **ASIA** / **JAPAN** **Contact us** : webmaster@ rohm.co.jp Copyright © 2007 ROHM CO.,LTD. 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0
Updated at June 9, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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