QS5K2TR

QS5K2 

Transistors 

## 2.5V Drive Nch+Nch MOSFET 

## **QS5K2** 

## � **Structure** 

Silicon N-channel MOSFET 

## � **Features** 

- 1) Low On-resistance. 

- 3) Space saving, small surface mount package (TSMT5). 

� **Applications** Switching 

- **Dimensions** (Unit : mm) 

**==> picture [185 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
TSMT5<br>1.0MAX<br>2.9<br>1.9 0.85<br>0.95 0.95 0.7<br>(5) (4)<br>0~0.1<br>(1) (2) (3)<br>0.4 0.16<br>Each lead has same dimensions<br>Abbreviated symbol : K02<br>1.6 2.8<br>0.60.3~<br>**----- End of picture text -----**<br>


- **Packaging specifications** � **Inner circuit** 

|Type|Package|Taping|
|---|---|---|
||Code|TR|
||Basic ordering unit (pieces)|3000|
|QS5K2|||



**==> picture [150 x 125] intentionally omitted <==**

**----- Start of picture text -----**<br>
(5) (4)<br>∗ 2 ∗ 2<br>∗ 1 ∗ 1 (1) Tr1 Gate<br>(2) Tr1 Source<br>Tr2 Source<br>(1) (2) (3)<br>(3) Tr2 Gate<br>∗ 1 ESD PROTECTION DIODE (4) Tr2 Drain<br>∗ 2 BODY DIODE (5) Tr1 Drain<br>**----- End of picture text -----**<br>


## � **Absolute maximum ratings** (Ta=25°C) 

<It is the same ratings for the Tr1 and Tr2> 

|Parameter||Symbol|Limits|Unit|
|---|---|---|---|---|
|Drain-source voltage||VDSS|30|V|
|Gate-source voltage||VGSS|12|V|
|Drain current|Continuous|ID|±2.0|A|
||Pulsed|∗1<br>IDP|±8.0|A|
|Source current<br>(Body diode)|Continuous|IS|0.8|A|
||Pulsed|∗1<br>ISP|3.2|A|
|Total power dissipation||∗2<br>PD|1.25|W / TOTAL|
||||0.9|W / ELEMENT|
|Channel temperature||Tch|150|°C|
|Range of storage temperature||Tstg|−55 to+150|°C|



- ∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1% 

∗ 2 Mounted on a ceramic board 

## � **Thermal resistance** 

|�**Thermal resistance**||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Channel to ambient|Rth(ch-a)<br>∗|100|°C/W|
|||139|°C/W|



- ∗ Mounted on a ceramic board 

Rev.A 

1/3 

QS5K2 

Transistors 

## � **Electrical characteristics** (Ta=25°C) 

<It is the same characteristics for the Tr1 and Tr2> 

|Parameter|Symbol|Symbol|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|---|---|
|Gate-source leakage|IGSS|||−|−|10|µA|VGS=12V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||30|−|−|V|ID= 1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||−|−|1|µA|VDS= 30V, VGS=0V|
|Gate threshold voltage|VGS (th)|||0.5|−|1.5|V|VDS= 10V, ID= 1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|71|100|mΩ|ID= 2A, VGS= 4.5V|
|||||−|76|107|mΩ|ID= 2A, VGS= 4.0V|
|||||−|110|154|mΩ|ID= 2A, VGS= 2.5V|
|Forward transfer admittance||Yfs|∗|1.5|−|−|S|VDS= 10V, ID= 2A|
|Input capacitance|Ciss|||−|175|−|pF|VDS= 10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|||−|50|−|pF||
|Reverse transfer capacitance|Crss|||−|25|−|pF||
|Turn-on delay time|td (on)<br>∗|||−|8|−|ns|VDD15V<br>ID= 1A<br>VGS= 4.5V<br>RL= 15Ω<br>RG=10Ω|
|Rise time|tr<br>∗|||−|10|−|ns||
|Turn-off delay time|td (off)<br>∗|||−|21|−|ns||
|Fall time|tf<br>∗|||−|8|−|ns||
|Total gate charge|Qg<br>∗|||−|2.8|3.9|nC|VDD  15V<br>VGS= 4.5V<br>ID= 2A|
|Gate-sourcecharge|Qgs<br>∗|||−|0.6|−|nC||
|Gate-draincharge|Qgd<br>∗|||−|0.8|−|nC||



- ∗ Pulsed 

## � **Body diode characteristics** (Source-drain) (Ta=25°C) 

<It is the same characteristics for the Tr1 and Tr2> 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD<br>∗|−|−|1.2|V|IS= 3.2A, VGS=0V|
|∗Pulsed|||||||



Rev.A 

2/3 

QS5K2 

## Transistors 

## � **Electrical characteristics curves** 

**==> picture [441 x 550] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 Ta=25 ° C 1000 Ta=25 ° C 6 Ta=25 ° C<br>f=1MHz VDD=15V VDD=15V<br>VGS=0V RPulsedVGSG=10=4.5V Ω 5 IRDG=2A=10 Ω<br>tf Pulsed<br>100 4<br>Ciss<br>100 td(off) 3<br>10 td(on) 2<br>Coss<br>tr<br>1<br>Crss<br>10 1 0<br>0.01 0.1 1 10 100 0.01 0.1 1 10 0 1 2 3<br>DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC)<br>Fig.1  Typical Capacitance Fig.2  Switching Characteristics Fig.3  Dynamic Input Characteristics<br>                  vs. Drain-Source Voltage<br>10 VDS=10V 300 Ta=25 ° C 10 VGS=0V<br>Pulsed Pulsed Pulsed<br>Ta=125 ° C<br>1 Ta=125 ° C ID=2A 75 ° C<br>75 ° C 200 1 25 ° C<br>25 ° C − 25 ° C<br>− 25 ° C<br>0.1 ID=1A<br>100 0.1<br>0.01<br>0.001 0 0.01<br>0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5<br>GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V)<br>Fig.4  Typical Transfer Characteristics Fig.5  Static Drain-Source Fig.6  Source Current vs.<br>                  On-State Resistance vs.               Source-Drain Voltage<br>            Gate source Voltage<br>1000 1000 1000<br>VGS=4.5V VGS=4.0V VGS=2.5V<br>Pulsed Pulsed Pulsed<br>Ta=125 ° C Ta=125 ° C Ta=125 ° C<br>75 ° C 75 ° C 7525 °° CC<br>25 ° C 25 ° C − 25 ° C<br>− 25 ° C − 25 ° C<br>100 100 100<br>10 10 10<br>0.1 1 10 0.1 1 10 0.1 1 10<br>DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)<br>Fig.7  Static Drain-Source Fig.8  Static Drain-Source Fig.9  Static Drain-Source<br>            On-State Resistance             On-State Resistance             On-State Resistance<br>             vs. Drain Current (  Ι  )               vs. Drain Current (  ΙΙ  )                 vs. Drain Current (  ΙΙΙ  )<br> (V)<br>GS<br>CAPACITANCE : C (pF) SWITCHING TIME : t (ns) GATE-SOURCE VOLTAGE : V<br>) Ω<br> (m<br>DRAIN CURRENT : I (A)D DS SOURCE CURRENT : I (A)S<br>STATIC DRAIN-SOURCE                   ON-STATE RESISTANCE : R<br>) Ω ) Ω ) Ω<br> (m  (m  (m<br>DS (on) DS (on) DS (on)<br>STATIC DRAIN-SOURCE                         ON-STATE RESISTANCE : R STATIC DRAIN-SOURCE                         ON-STATE RESISTANCE : R STATIC DRAIN-SOURCE                         ON-STATE RESISTANCE : R<br>**----- End of picture text -----**<br>


Rev.A 

3/3 

Appendix 

## Notes 

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

## About Export Control Order in Japan 

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. 

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. 

Appendix1-Rev1.1