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QH8MA3TCR
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7 A, 7 A, 0.029 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ROHM
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSMT
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.5W
- Power Dissipation P Channel: 2.5W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 7A
- Continuous Drain Current Id P Channel: 7A
- Drain Source On State Resistance N Channel: 0.029ohm
- Drain Source On State Resistance P Channel: 0.048ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.254 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
Datasheet ## QH8MA3 ## 30V Nch+Pch Middle Power MOSFET ## **l Outline** **==> picture [186 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |Symbol|Tr1:Nch|Tr2:Pch| |VDSS|30V|-30V| |RDS(on)(Max.)|29mΩ|48mΩ| |ID|±7.0A|±5.5A| |PD|2.5W| **----- End of picture text -----**<br> TSMT8 ## **l Features** ## **l Inner circuit** 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating ; RoHS compliant. - 4) Halogen Free. ## **l Packaging specifications** ## **l Application** Switching **==> picture [235 x 116] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |Embossed| |Packing| |Tape| |Reel size (mm)|180| |Type|Tape width (mm)|8| |Basic ordering unit (pcs)|3000| |Taping code|TR| |Marking|MA3| **----- End of picture text -----**<br> ## **l Absolute maximum ratings** (Ta = 25°C) **,unless otherwise specified.** **==> picture [493 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |Value| |Parameter|Symbol|Unit| |Tr1:Nch|Tr2:Pch| |Drain - Source voltage|VDSS|30|-30|V| |Continuous drain current|ID|[*1]|±7.0|±5.5|A| |Pulsed drain current|ID,|pulse|[*2]|±18|±18|A| |Gate - Source voltage|VGSS|±20|±20|V| |Avalanche energy, single pulse|EAS|[*4]|1.8|1.1|mJ| |Avalanche current|IAS|[*4]|5.0|-4.0|A| |PD|[*1]|2.5| |total| |Power dissipation|PD|[*3]|1.5|W| |element|PD|[*3]|1.25| |Junction temperature|Tj|150|℃| |Range of storage temperature|Tstg|-55 to +150|℃| **----- End of picture text -----**<br> www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 1/19 **QH8MA3** Datasheet ## **l Thermal resistance** |Parameter|Symbol|Type|Conditions|Values|Values|Values|Unit| |---|---|---|---|---|---|---|---| |||||Min.|Typ.|Max.|| |Drain - Source breakdown<br>voltage|V(BR)DSS|Tr1|VGS= 0V, ID= 1mA|30|-|-|V| |||Tr2|VGS= 0V, ID= -1mA|-30|-|-|| |Breakdown voltage<br>temperature coefficient|ΔV(BR)DSS <br> ΔTj|(BR)DSS Tr1|ID= 1mA, referenced to 25℃|-|21|-|mV/℃| |||Tr2|ID= -1mA, referenced to 25℃|-|-22|-|| |Zero gate voltage<br>drain current|IDSS|Tr1|VDS= 30V, VGS= 0V|-|-|1|μA| |||Tr2|VDS= -30V, VGS= 0V|-|-|-1|| |Gate - Source<br>leakage current|IGSS|Tr1|VDS= 0V, VGS= ±20V|-|-|±100|nA| |||Tr2|VDS= 0V, VGS= ±20V|-|-|±100|| |Gate threshold<br>voltage|VGS(th)|Tr1|VDS= VGS, ID= 1mA|1.0|-|2.5|V| |||Tr2|VDS= VGS, ID= -1mA|-1.0|-|-2.5|| |Gate threshold voltage<br>temperature coefficient|ΔVGS(th) <br> ΔTj|Tr1|ID= 1mA, referenced to 25℃|-|-3|-|mV/℃| |||Tr2|ID= -1mA, referenced to 25℃|-|2.9|-|| |Static drain - source<br>on - state resistance|RDS(on)*5|Tr1|VGS= 10V, ID= 7.0A|-|22|29|mΩ| ||||VGS= 4.5V, ID= 5.0A|-|35|46|| |||Tr2|VGS= -10V, ID= -5.5A|-|37|48|| ||||VGS= -4.5V, ID= -4.0A|-|55|72|| |Transconductance|gfs*5|Tr1|VDS= 5V, ID= 5A|2.7|-|-|S| |||Tr2|VDS= -5V, ID= -4A|3.3|-|-|| - *1 Pw ≦ 1s, Limited only by maximum temperature allowed. - *2 Pw ≦ 10μs, Duty cycle ≦ 1% ## *3 MOUNTED ON A CERAMIC BOARD - *4 Tr1: L ⋍ 100μH, VDD = 15V, RG = 25Ω, STARTING Tch = 25℃ Fig.3-1,3-2 Tr2: L ⋍ 100μH, VDD = -15V, RG = 25Ω, STARTING Tch = 25℃ Fig.6-1,6-2 *5 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 2/19 **QH8MA3** Datasheet ## **l Electrical characteristics** (Ta = 25°C) ## **<Tr1>** |**<Tr1>**||||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Values|||Unit| ||||Min.|Typ.|Max.|| |Input capacitance|Ciss|VGS= 0V<br>VDS= 15V<br>f = 1MHz|-|300|-|pF| |Output capacitance|Coss||-|50|-|| |Reverse transfer capacitance|Crss||-|40|-|| |Turn - on delay time|td(on)*5|VDD ⋍15V, VGS= 10V<br>ID= 3.5A<br>RL= 4.3Ω<br>RG= 10Ω|-|7.2|-|ns| |Rise time|tr*5||-|8.0|-|| |Turn - off delay time|td(off)*5||-|12|-|| |Fall time|tf*5||-|5.7|-|| ## **<Tr2>** |**<Tr2>**||||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Values|||Unit| ||||Min.|Typ.|Max.|| |Input capacitance|Ciss|VGS= 0V<br>VDS= -15V<br>f = 1MHz|-|480|-|pF| |Output capacitance|Coss||-|85|-|| |Reverse transfer capacitance|Crss||-|65|-|| |Turn - on delay time|td(on)*5|VDD ⋍-15V, VGS= -10V<br>ID= -2.25A<br>RL= 6.7Ω<br>RG= 10Ω|-|8.0|-|ns| |Rise time|tr*5||-|12|-|| |Turn - off delay time|td(off)*5||-|40|-|| |Fall time|tf*5||-|20|-|| www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 3/19 **QH8MA3** Datasheet ## **l Gate charge characteristics** (Ta = 25°C) |**<Tr1>**<br>Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Total gate charge<br>Qg*5<br>VDD ⋍15V<br>ID= 7A<br>VGS= 10V<br>-<br>7.2<br>-<br>nC<br>VGS= 4.5V<br>-<br>3.7<br>-<br>Gate - Source charge<br>Qgs*5<br>-<br>1.4<br>-<br>Gate - Drain charge<br>Qgd*5<br>-<br>1.3<br>-<br>**<Tr2>**<br>Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Total gate charge<br>Qg*5<br>VDD ⋍-15V<br>ID= -5.5A<br>VGS= -10V<br>-<br>10<br>-<br>nC<br>VGS= -4.5V<br>-<br>5.2<br>-<br>Gate - Source charge<br>Qgs*5<br>-<br>1.6<br>-<br>Gate - Drain charge<br>Qgd*5<br>-<br>1.9<br>-<br>~~== eee~~<br>~~==emees~~| |---| |**lBody diode electrical characteristics**(Source-Drain) (Ta= 25°C)| |**<Tr1>**| |Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Body diode continuous<br>forward current<br>IS<br>Ta= 25℃<br>-<br>-<br>1.0<br>A<br>Body diode<br>pulse current<br>ISP*2<br>-<br>-<br>18<br>Forward voltage<br>VSD*5<br>VGS= 0V, IS= 1A<br>-<br>-<br>1.2<br>V<br>~~Se~~| |**<Tr2>**| |Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Body diode continuous<br>forward current<br>IS<br>Ta= 25℃<br>-<br>-<br>-1.0<br>A<br>Body diode<br>pulse current<br>ISP*2<br>-<br>-<br>-18<br>Forward voltage<br>VSD*5<br>VGS= 0V, IS= -1A<br>-<br>-<br>-1.2<br>V<br>~~HE~~| |www.rohm.com| |© 2015 ROHM Co., Ltd. All rights reserved.<br>4/19<br>**20150730 - Rev.002**| **20150730 - Rev.002** **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr1>** ## Fig.1 Power Dissipation Derating Curve ## Fig.2 Maximum Safe Operating Area ## Fig.3 Normalized Transient Thermal Fig.4 Single Pulse Maximum Power Resistance vs. Pulse Width dissipation www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 5/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr1>** Fig.5 Typical Output Characteristics(I) ## Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 6/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr1>** Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Tranceconductance vs. Drain Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 7/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr1>** Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 8/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr1>** Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 9/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr1>** Fig.17 Typical Capacitance vs. Drain - Source Voltage ## Fig.19 Dynamic Input Characteristics ## Fig.18 Switching Characteristics Fig.20 Source Current vs. Source Drain Voltage www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 10/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr2>** ## Fig.1 Power Dissipation Derating Curve Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width ## Fig.2 Maximum Safe Operating Area Fig.4 Single Pulse Maximum Power dissipation www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 11/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr2>** Fig.5 Typical Output Characteristics(I) ## Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 12/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr2>** Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Tranceconductance vs. Drain Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 13/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr2>** Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 14/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr2>** Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 15/19 **QH8MA3** Datasheet ## **l Electrical characteristic curves <Tr2>** Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.19 Dynamic Input Characteristics ## Fig.18 Switching Characteristics Fig.20 Source Current vs. Source Drain Voltage www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 16/19 **QH8MA3** Datasheet ## **l Measurement circuits** <Tr1> ## Fig.1-1 Switching Time Measurement Circuit Fig.2-1 Gate Charge Measurement Circuit Fig.3-1 Avalanche Measurement Circuit ## Fig.1-2 Switching Waveforms Fig.2-2 Gate Charge Waveform Fig.3-2 Avalanche Waveform www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 17/19 **QH8MA3** Datasheet ## **l Measurement circuits** <Tr2> **==> picture [178 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.4-1 Switching Time Measurement Circuit<br>**----- End of picture text -----**<br> Fig.5-1 Gate Charge Measurement Circuit **==> picture [127 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.4-2 Switching Waveforms<br>Pulse width<br>Ves yi 10%50%<br>Vos /| 90%<br>tavon rl] | t,<br>LT.<br>ton<br>Fig.5-2 Gate Charge Waveform<br>**----- End of picture text -----**<br> Fig.6-1 Avalanche Measurement Circuit Fig.6-2 Avalanche Waveform ## **l Notice** This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 18/19 **QH8MA3** Datasheet ## **l Dimensions** www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 19/19 Notice **==> picture [309 x 464] intentionally omitted <==** **----- Start of picture text -----**<br> Notes<br>1) The information contained herein is subject to change without notice.<br>2) Before you use our Products, please contact our sales representative and verify the latest specifica-<br>tions:<br>3) Although ROHM is continuously working to improve product reliability and quality, semicon-<br>ductors can break down and malfunction due to various factors.<br>Therefore, in order to prevent personal injury or fire arising from failure, please take safety<br>measures such as complying with the derating characteristics, implementing redundant and<br>fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no<br>responsibility for any damages arising out of the use of our Poducts beyond the rating specified<br>by ROHM.<br>4) Examples of application circuits, circuit constants and any other information contained herein are<br>provided only to illustrate the standard usage and operations of the Products. The peripheral<br>conditions must be taken into account when designing circuits for mass production.<br>5) The technical information specified herein is intended only to show the typical functions of and<br>examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,<br>any license to use or exercise intellectual property or other rights held by ROHM or any other<br>parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of<br>such technical information.<br>6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-<br>cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in<br>this document.<br>7) The Products specified in this document are not designed to be radiation tolerant.<br>8) For use of our Products in applications requiring a high degree of reliability (as exemplified<br>below), please contact and consult with a ROHM representative : transportation equipment (i.e.<br>cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety<br>equipment, medical systems, servers, solar cells, and power transmission systems.<br>9) Do not use our Products in applications requiring extremely high reliability, such as aerospace<br>equipment, nuclear power control systems, and submarine repeaters.<br>10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with<br>the recommended usage conditions and specifications contained herein.<br>11) ROHM has used reasonable care to ensur the accuracy of the information contained in this<br>document. However, ROHM does not warrants that such information is error-free, and ROHM<br>shall have no responsibility for any damages arising from any inaccuracy or misprint of such<br>information.<br>12) Please use the Products in accordance with any applicable environmental laws and regulations,<br>such as the RoHS Directive. For more details, including ROHS compatibility, please contact a<br>ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting<br>non-compliance with any applicable laws or regulations.<br>13) When providing our Products and technologies contained in this document to other countries,<br>you must abide by the procedures and provisions stipulated in all applicable export laws and<br>regulations, including without limitation the US Export Administration Regulations and the Foreign<br>Exchange and Foreign Trade Act.<br>14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of<br>ROHM.<br>**----- End of picture text -----**<br> Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. **==> picture [59 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> itentelietttel<br>**----- End of picture text -----**<br> §$FROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. R1102A
Updated at June 9, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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