Q4010L4TP
TRIAC, 400V, 10A, TO-220AB
- Manufacturer: LITTELFUSE
- Product type:
- Peak Repetitive Off State Voltage:400V; On State RMS Current:10A; Triac Case Style:TO-220AB; Gate Trigger Voltage Max:1.3V; Peak Non Repetitive Surge Current:100A; Holding 90T9029
- MSL: MSL 2 - 1 year
- No. of Pins: 3Pins
- Product Range: Qxx10xx Series
- Triac Case Style: TO-220AB
- Thyristor Mounting: Through Hole
- Holding Current Max: 35mA
- On State RMS Current: 10A
- Peak On State Voltage: 1.6V
- Gate Trigger Voltage Max: 1.3V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 100A
- Peak Repetitive Off State Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.5 € |
| Current stock | 10+ |
| Lead time | 30 days |
**Thyristors** 10 Amp Standard & Alternistor (High Commutation) Triacs ~~**RoHS** |_| SAA~~ ## ~~Qxx10xx & Qxx10xHx Series~~ ## **Description** ~~Lo~~ 10 Amp bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard type devices normally operate in Quadrants I & III triggered from AC line. ## **Features & Benefits** **==> picture [243 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> Agency Approval<br>Lo<br>Agency Agency File Number<br>W E71639*<br>* - L Package Only<br>Main Features<br>Lo<br>Symbol Value Unit<br>IT(RMS) 10 A<br>VDRM/VRRM 400 to 1000 V<br>IGT (Q1) 25 to 50 mA<br>**----- End of picture text -----**<br> - RoHS-compliant - No contacts to wear out from reaction of switching events - Glass – passivated junctions - Restricted (or limited) RFI generation, depending on activation point sine wave - Voltage capability up to 1000 V - Surge capability up to 120 A - UL Recognized to UL - 120 A 1557 as an Electrically - • 2500Vrms min. isolation Isolated Semiconductor between mounting tab Device and active terminals - Solid-state switching eliminates arcing or contact bounce that create voltage transients **==> picture [504 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> Schematic Symbol Applications<br>eee eee<br>Alternistor type devices are used in applications requiring<br>high commutation performance such as controlling<br>MT2 MT1 inductive loads. Isolated packages are offered with internal<br>construction, having the case or mounting tab electrically<br>isolated from the semiconductor chip.<br>G<br>**----- End of picture text -----**<br> **==> picture [244 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> Additional Information<br>Po<br>S<br>Datasheet Resources Samples<br>**----- End of picture text -----**<br> ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: BO.11/21/20 **Thyristors** 10 Amp Standard & Alternistor (High Commutation) Triacs ## **Absolute Maximum Ratings — Standard Triac** **==> picture [506 x 358] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Value Unit<br>IT(RMS) RMS on-state current (full sine wave) Qxx10Ry/Qxx10Ny TC = 95°C 10 A<br>Qxx10Ly TC = 90°C<br>ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) f = 50 Hzf = 60 Hz t = 16.7 mst = 20 ms 120100 A<br>I [2] t I [2] t Value for fusing tp = 8.3 ms 60 A [2] s<br>Critical rate of rise of on-state current<br>di/dt IG = 200mA with ≤ 0.1μs rise time f = 120 Hz TJ = 125°C 70 A/μs<br>IGTM Peak gate trigger current tIpGT ≤ 10 μs ≤ IGTM TJ = 125°C 1.8 A<br>PG(AV) Average gate power dissipation TJ = 125°C 0.5 W<br>Tstg Storage temperature range -40 to 150 °C<br>TJ Operating junction temperature range -40 to 125 °C<br>Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)<br>Symbol Parameter Value Unit<br>Qxx10LHy TC = 90°C<br>IT(RMS) RMS on-state current (full sine wave) Qxx10RHy/Qxx10NHy TC = 95°C 10 A<br>ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) f = 50 Hzf = 60 Hz t = 16.7 mst = 20 ms 120110 A<br>I [2] t I [2] t Value for fusing tp = 8.3 ms 60 A [2] s<br>di/dt Critical rate of rise of on-state current f = 120 Hz TJ = 125°C 70 A/μs<br>IGTM Peak gate trigger current tIpGT ≤ 10 μs ≤ IGTM TJ = 125°C 2.0 A<br>PG(AV) Average gate power dissipation - TJ = 125°C 0.5 W<br>Tstg Storage temperature range - -40 to 150 °C<br>TJ Operating junction temperature range - -40 to 125 °C<br>**----- End of picture text -----**<br> ## **Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Standard Triac** **==> picture [506 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Test Conditions Quadrant Qxx10x4 Qxx10x5 Unit<br>I – II – III 25 50<br>IGT VD = 12V RL = 60 Ω IV MAX. 50 75 (TYP) mA<br>VGT VD = 12V RL = 60 Ω I – II – III MAX. 1.3 V<br>VGD VD = VDRM RL = 3.3 kΩ TJ = 125°C ALL MIN. 0.2 V<br>IH IT = 200mA MAX. 35 50 mA<br>400V 150 225<br>dv/dt VD = VDRM Gate Open TJ = 125°C 600V MIN. 100 200 V/μs<br>800V 75 175<br>VD = VDRM Gate Open TJ = 100°C 1000V 50 150<br>(dv/dt)c (di/dt)c = 5.4 A/ms TJ = 125°C TYP. 2 4 V/μs<br>tgt IG = 2 x IGT PW = 15µs IT = 14.1 A(pk) TYP. 3.0 3.0 μs<br>**----- End of picture text -----**<br> **Note:** xx = voltage, x = package, y = sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: BO.11/21/20 **Thyristors** 10 Amp Standard & Alternistor (High Commutation) Triacs **Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants)** **==> picture [506 x 353] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Test Conditions Quadrant Value Unit<br>IGT VD = 12V RL = 60 Ω I – II – III MAX. 50 mA<br>VGT VD = 12V RL = 60 Ω I – II – III MAX. 1.3 V<br>VGD VD = VDRM RL = 3.3 kΩ TJ = 125°C I – II – III MIN. 0.2 V<br>IH IT = 100mA MAX. 50 mA<br>400V 750<br>dv/dt VD = VDRM Gate Open TJ = 125°C 600V MIN. 650 V/μs<br>800V 500<br>VD = VDRM Gate Open TJ = 100°C 1000V 300<br>(dv/dt)c (di/dt)c = 5.4 A/ms TJ = 125°C TYP. 30 V/μs<br>tgt IG = 2 x IGT PW = 15µs IT = 14.1 A(pk) TYP. 4.0 μs<br>Static Characteristics<br>Symbol Test Conditions Value Unit<br>VTM ITM = 14.1A tp = 380 µs MAX. 1.60 V<br>TJ = 25°C 400 - 600V 10 μA<br>IIDRM RRM VDRM = VRRM TJ = 125°C 400 - 800V MAX. 2 mA<br>TJ = 100°C 1000V 3<br>Thermal Resistances<br>Symbol Parameter Value Unit<br>Qxx10Ryy/ 1.3<br>R Ɵ (J-C) Junction to case (AC) Qxx10Nyy °C/W<br>Qxx10Lyy 2.6<br>Qxx10Ryy 45<br>R Ɵ (J-A) Junction to ambient (AC) Qxx10Lyy 50 °C/W<br>**----- End of picture text -----**<br> **Note:** xx = voltage, x = package, y = sensitivity, yy = type & sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: BO.11/21/20 **Thyristors** 10 Amp Standard & Alternistor (High Commutation) Triacs **==> picture [244 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1: Definition of Quadrants<br>**----- End of picture text -----**<br> **==> picture [245 x 395] intentionally omitted <==** **----- Start of picture text -----**<br> ALL POLARITIES ARE REFERENCED TO MT1<br>MT2 POSITIVE<br>MT2 (Positive Half Cycle)+ MT2<br>(-) IGT (+) IGT<br>GATE GATE<br>MT1 MT1<br>REF REF<br>IGT - QIIIQII QIQIV + IGT<br>MT2 MT2<br>(-) IGT (+) IGT<br>GATE GATE<br>MT1 MT1<br>-<br>REF MT2 NEGATIVE REF<br>(Negative Half Cycle)<br>Note: Alternistors will not operate in QIV<br>Figure 3: Normalized DC Holding Current<br>vs. Junction Temperature<br>4.0<br>3.0<br>2.0<br>1.0<br>0.0<br>-65 -40 -15 10 35 60 85 110 +125<br>Junction Temperature (TJ) - ºC<br>= 25ºC)<br>J<br> (TRatio of I/ IHH<br>**----- End of picture text -----**<br> **==> picture [244 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 2: Normalized DC Gate Trigger Current for<br>All Quadrants vs. Junction Temperature<br>4.0<br>3.0<br>2.0<br>1.0<br>0.0<br>-65 -40 -15 10 35 60 85 110 +125<br>Junction Temperature (TJ) - ºC<br>Figure 4: Normalized DC Gate Trigger Voltage for<br>All Quadrants vs. Junction Temperature<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-65 -40 -15 10 35 60 85 110 +125<br>Junction Temperature (TJ) - ºC<br>= 25ºC)<br>J<br> (T<br>GT<br>/ I<br>GT<br>Ratio of I<br>= 25ºC)<br>J<br> (T<br>GT<br>/ V<br>GT<br>Ratio of V<br>**----- End of picture text -----**<br> **==> picture [505 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5: Power Dissipation (Typical) Figure 6: Maximum Allowable Case Temperature<br>vs. RMS On-State Current vs. On-State Current<br>12 130<br>120<br>10<br>110 Qxx10Ryy<br>8 Qxx10Nyy<br>100<br>6 Qxx10Lyy<br>90<br>4 80<br>CURRENT WAVEFORM: Sinusoidal<br>2 LOAD: Resistive or Inductive 70<br>CONDUCTION ANGLE: 360 o<br>60<br>0 0 2 4 6 8 10 12 14<br>0 2 4 6 8 10 12<br>RMS On-State Current [IT(RMS)] - AMPS RMS On-State Current [IT(RMS)] - AMPS<br>] - Watts (T) - CC<br>D (AV)<br>[P<br>Average On-State Power Dissipation Max Allowable Case Temperature<br>**----- End of picture text -----**<br> ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: BO.11/21/20 **Thyristors** 10 Amp Standard & Alternistor (High Commutation) Triacs **==> picture [244 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7: Maximum Allowable Ambient Temperature<br>vs. On-State Current<br>120<br>110 CURRENT WAVEFORM: Sinusoidal<br>LOAD: Resistive or Inductive CONDUCTION<br>100 ANGLE: 360ºFREE AIR RATING - NO HEATSINK<br>90<br>80<br>Qxx10LHy<br>70 Qxx10RHy<br>60 Qxx10Ly<br>Qxx10Ry<br>50<br>40<br>30<br>20<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>RMS On-State Current [IT(RMS)] - AMPS<br>) - ºC(TA<br>Max Allowable Ambient Temperature<br>**----- End of picture text -----**<br> **==> picture [244 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 8: On-State Current vs. On-State Voltage<br>(Typical)<br>20<br>18<br>16 TC = 25 ºC<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>Positive or Negative Instantaneous On-State Voltage<br>(VT) - Volts<br>) - AMPSOn-State Current (IT<br>Positive or Negative Instantaneous<br>**----- End of picture text -----**<br> ## **Figure 9: Surge Peak On-State Current vs. Number of Cycles** **==> picture [262 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>1 10 100 1000<br>Surge Current Duration - Full Cycles<br>) - AMPS<br>TSM<br>(I<br>Peak Surge (Non-Repetitive) On-State Current<br>**----- End of picture text -----**<br> **SUPPLY FREQUENCY:** 60 Hz Sinusoidal **LOAD:** Resistive **RMS On-State Current: [IT(RMS)]:** Maximum Rated Value at Specified Case Temperature **Notes:** **1.** Gate control may be lost during and immediately following surge current interval. **2.** Overload may not be repeated until junction temperature has returned to steady-state rated value. ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: BO.11/21/20 **Thyristors** 10 Amp Standard & Alternistor (High Commutation) Triacs ## **Soldering Parameters** **==> picture [505 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> Reflow Condition Pb – Free assembly t P<br>- Temperature Min (Ts(min)) 150°C T P<br>Pre HeatAverage ramp up rate (Liquidus Temp) (T- Temperature Max (T- Time (min to max) (ts(max)s) ) L) to peak 5°C/second max200°C60 – 180 secs T S(max) T L Ramp-up t L Ramp-down<br>TS(max) to TL - Ramp-up Rate 5°C/second max Preheat<br>Reflow - Time (min to max) (t- Temperature (TL) (Liquidus)s) 217°C 60 – 150 seconds T S(min) t S<br>Peak Temperature (TP) 260 [+0/-5] °C 25<br>Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds time to peak temperatur e Time<br>Ramp-down Rate 5°C/second max<br>Time 25°C to peak Temperature (TP) 8 minutes Max.<br>Do not exceed 280°C<br>Temperature<br>**----- End of picture text -----**<br> |**Physical Specifcations**|**Physical Specifcations**| |---|---| ||| |**Terminal Finish**|100% Matte Tin-plated| |**Body Material**|UL recognized epoxy meeting fammabilty<br>classifcation 94V-0.| |**Terminal Material**|Copper Alloy| ## **Design Considerations** Careful selection of the correct device for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. ## **Environmental Specifications** **==> picture [244 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> Test Specifications and Conditions<br>MIL-STD-750, M-1040, Cond A Applied Peak<br>AC Blocking<br>AC voltage @ 125°C for 1008 hours<br>MIL-STD-750, M-1051, 100 cycles; -40°C to<br>Temperature Cycling<br>+150°C, 15-min dwell-time<br>EIA/JEDEC, JESD22-A101 1008 hours; 320V -<br>Temperature/Humidity<br>DC: 85°C; 85% rel humidity<br>MIL-STD-750, M-1031,<br>High Temp Storage<br>1008 hours; 150°C<br>Low-Temp Storage 1008 hours; -40°C<br>Resistance to<br>MIL-STD-750 Method 2031<br>Solder Heat<br>Solderability ANSI/J-STD-002, category 3 Test A<br>Lead Bend MIL-STD-750, M-2036 Cond E<br>**----- End of picture text -----**<br> ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: BO.11/21/20 **Thyristors** 10 Amp Standard & Alternistor (High Commutation) Triacs ## **Dimensions — TO-220AB (R-Package) — Non-Isolated Mounting Tab Common with Center Lead** **==> picture [505 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> TC MEASURING POINT Inches Millimeters<br>Ø E A O P 8.13.320 Dimension Min Max Min Max<br>MT2<br>A 0.380 0.420 9.65 10.67<br>B<br>C AREA (REF.) B 0.105 0.115 2.67 2.92<br>0.17 in [2] 13.36<br>D .526 C 0.230 0.250 5.84 6.35<br>7.01 D 0.590 0.620 14.99 15.75<br>.276<br>E 0.142 0.147 3.61 3.73<br>F 0.110 0.130 2.79 3.30<br>F NOTCH IN GATE LEAD G 0.540 0.575 13.72 14.61<br>R TO ID. NON-ISOLATED TAB H 0.025 0.035 0.64 0.89<br>G<br>L J 0.195 0.205 4.95 5.21<br>H K 0.095 0.105 2.41 2.67<br>L 0.060 0.075 1.52 1.91<br>MT1 KMT2J GATE N M Note: be applied to mounting tabis 8 in-lbs. (0.904 Nm).Maximum torque to MN 0.0850.018 0.0950.024 0.462.16 2.410.61<br>O 0.178 0.188 4.52 4.78<br>P 0.045 0.060 1.14 1.52<br>R 0.038 0.048 0.965 1.22<br>**----- End of picture text -----**<br> ## **Dimensions — TO-220AB (L-Package) — Isolated Mounting Tab** **==> picture [505 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> TC MEASURING POINT Inches Millimeters<br>Ø E A O P 8.13.320 DimensionA 0.380 Min 0.420 Max 9.65 Min 10.67 Max<br>B B 0.105 0.115 2.67 2.92<br>C AREA (REF.)0.17 in [2] 13.36 C 0.230 0.250 5.84 6.35<br>D .526 D 0.590 0.620 14.99 15.75<br>7.01.276 E 0.142 0.147 3.61 3.73<br>F 0.110 0.130 2.79 3.30<br>G 0.540 0.575 13.72 14.61<br>F H 0.025 0.035 0.64 0.89<br>J 0.195 0.205 4.95 5.21<br>R<br>G K 0.095 0.105 2.41 2.67<br>L<br>L 0.060 0.075 1.52 1.91<br>H<br>M 0.085 0.095 2.16 2.41<br>K N Note: Maximum torque to N 0.018 0.024 0.46 0.61<br>J M be applied to mounting tab O 0.178 0.188 4.52 4.78<br>MT1 MT2 GATE is 8 in-lbs. (0.904 Nm). P 0.045 0.060 1.14 1.52<br>R 0.038 0.048 0.965 1.22<br>**----- End of picture text -----**<br> ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: BO.11/21/20 **Thyristors** 10 Amp Standard & Alternistor (High Commutation) Triacs **Dimensions — TO-263AB (N-Package) — D[2] -PAK Surface Mount** **==> picture [503 x 242] intentionally omitted <==** **----- Start of picture text -----**<br> TC MEASURING POINT AREA: 0.11 IN [2] Inches Millimeters<br>B V C Dimension<br>MT2 E Min Max Min Max<br>A 0.360 0.370 9.14 9.40<br>7.01 8.41.331 B 0.380 0.420 9.65 10.67<br>A .276 C 0.178 0.188 4.52 4.78<br>S D 0.025 0.035 0.64 0.89<br>E 0.045 0.060 1.14 1.52<br>W U<br>F 0.060 0.075 1.52 1.91<br>MT1 GATE K J G 0.095 0.105 2.41 2.67<br>G D H 8.13.320 H 0.092 0.102 2.34 2.59<br>F J 0.018 0.024 0.46 0.61<br>11.68 2.16 K 0.090 0.110 2.29 2.79<br>.460 .085 S 0.590 0.625 14.99 15.88<br>V 0.035 0.045 0.89 1.14<br>U 0.002 0.010 0.05 0.25<br>7.01.276 7.01.276 W 0.040 0.070 1.016 1.78<br>16.89<br>.665<br>8.89 1.40<br>.350 .055<br>3.81<br>.150<br>2.03<br>.080<br>6.60<br>.260<br>**----- End of picture text -----**<br> **==> picture [506 x 230] intentionally omitted <==** **----- Start of picture text -----**<br> Product Selector<br>Voltage (xx) Gate Sensitivity Quadrants<br>Part Number Type Package<br>400V 600V 800V 1000V I – II – III IV<br>Qxx10L4 X X X X 25 mA 50 mA Standard Triac TO-220L<br>Qxx10R4 X X X X 25 mA 50 mA Standard Triac TO-220R<br>Qxx10N4 X X X X 25 mA 50 mA Standard Triac TO-263 D²-PAK<br>Qxx10L5 X X X X 50 mA - Standard Triac TO-220L<br>Qxx10R5 X X X X 50 mA TYP. 75 mA Standard Triac TO-220R<br>Qxx10N5 X X X X 50 mA TYP. 75 mA Standard Triac TO-263 D²-PAK<br>Qxx10LH5 X X X X 50 mA TYP. 75 mA Alternistor Triac TO-220L<br>Qxx10RH5 X X X X 50 mA - Alternistor Triac TO-220R<br>Qxx10NH5 X X X X 50 mA - Alternistor Triac TO-263 D²-PAK<br>Packing Options<br>Part Number Marking Weight Packing Mode Base Quantity<br>Qxx10L/RyyTP Qxx10L/Ryy 2.2 g Tube Pack 1000 (50 per tube)<br>Qxx10NyyTP Qxx10Nyy 1.6 g Tube 1000 (50 per tube)<br>Qxx10NyyRP Qxx10Nyy 1.6 g Embossed Carrier 500<br>**----- End of picture text -----**<br> **Note:** xx = voltage, yy = type & sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: BO.11/21/20 **Thyristors** 10 Amp Standard & Alternistor (High Commutation) Triacs **TO-263 Embossed Carrier Reel Pack (RP) Specifications** **Meets all EIA-481-2 Standards** **==> picture [504 x 292] intentionally omitted <==** **----- Start of picture text -----**<br> 0.63 0.157<br>(16.0) (4.0)<br>Gate<br>0.059 DIA<br>(1.5)<br>MT1<br>0.945 0.827 *<br>(24.0) (21.0)<br>* Cover tape<br>MT2<br>12.99<br>0.512 (13.0) Arbor (330.0)<br>Hole Dia. Dimensions<br>are in inches<br>(and millimeters).<br>1.01<br>(25.7)<br>Direction of Feed<br>Part Numbering System Part Marking System<br>**----- End of picture text -----**<br> **==> picture [244 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> Q 60 10 L H5 56<br>DEVICE TYPE<br>LEAD FORM DIMENSIONS<br>Q: Triac or Alternistor<br>xx: Lead Form Option<br>VOLTAGE RATING<br>40: 400V SENSITIVITY<br>60: 600V Standard Triac:<br>80: 800V 4: 25 mA (QI, II, III)<br>K0: 1000V 50 mA (QIV)<br>5: 50 mA (QI, II, III)<br>CURRENT RATING Alternistor Triac:<br>10: 10A H5: 50mA (QI, II, III)<br>PACKAGE TYPE<br>L: TO-220 Isolated<br>R: TO-220 Non-Isolated<br>N: TO-263 (DPak) 2<br>**----- End of picture text -----**<br> TO-220 AB - (L and R Package) TO-263 AB - (N Package) **==> picture [92 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> Q6010R5<br>YMXXX<br>®<br>Date Code Marking<br>Y:Year Code<br>M: Month Code<br>XXX: Lot Trace Code<br>**----- End of picture text -----**<br> **Disclaimer Notice -** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimier-electronics. ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: BO.11/21/20
Updated at June 8, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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