PUMZ1,115
Bipolar Transistor Array, NPN, PNP, 40 V, 40 V, 100 mA, 100 mA, 300 mW
- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:120
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- Power Dissipation NPN: 300mW
- Power Dissipation PNP: 300mW
- Transistor Case Style: SOT-363
- DC Current Gain hFE Min: 120hFE
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 120hFE
- DC Current Gain hFE Min PNP: 120hFE
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 40V
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: 40V
- Collector Emitter Voltage Max PNP: 40V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.053 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia ## _**DISCRETE SEMICONDUCTORS**_ **==> picture [359 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> DATA SHEET<br>**----- End of picture text -----**<br> **==> picture [208 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> book, halfpage<br>MBD128<br>**----- End of picture text -----**<br> ## **PUMZ1** NPN/PNP general purpose transistors Product data sheet Supersedes data of 2002 May 6 2004 Oct 15 **==> picture [249 x 119] intentionally omitted <==** **NXP Semiconductors** **Product data sheet** ## **NPN/PNP general purpose transistors** ## **PUMZ1** ## **FEATURES** - Low current (max. 100 mA) - Low voltage (max. 40 V) - Reduces number of components and boardspace. ## **APPLICATIONS** - General purpose switching and amplification. ## **DESCRIPTION** Two independently operating NPN/PNP transistors in an SC-88; SOT363 plastic package. ## **MARKING** |**MARKING**|| |---|---| |**TYPE NUMBER**|**MARKING CODE**(1)| |PUMZ1|F*Z| ## **PINNING** |**PINNING**|| |---|---| |**PIN**|**DESCRIPTION**| |1, 4|emitter<br>TR1; TR2| |2, 5|base<br>TR1; TR2| |3, 6|collector<br>TR2; TR1| **==> picture [242 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> 6 5 4<br>handbook, halfpage<br>6 5 4<br>TR2<br>TR1<br>1 2 3<br>1 2 3<br>Top view MAM341<br>Fig.1 Simplified outline (SC-88) and symbol.<br>**----- End of picture text -----**<br> **==> picture [242 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> 6 5 4<br>handbook, halfpage<br>6 5 4<br>TR2<br>TR1<br>1 2 3<br>1 2 3<br>Top view MAM341<br>Fig.1 Simplified outline (SC-88) and symbol.<br>**----- End of picture text -----**<br> ## **Note** 1. * = -: Made in Hong Kong. - = t: Made in Malaysia. - = W: Made in China. ## **ORDERING INFORMATION** |**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**| |---|---|---|---| ||**NAME**|**DESCRIPTION**|**VERSION**| |PUMZ1|−|plastic surface mountedpackage; 6 leads|SOT363| 2004 Oct 15 2 NXP Semiconductors Product data sheet ## NPN/PNP general purpose transistors ## PUMZ1 ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |**Per transistor; for the PNP transistor with negative polarity**|||||| |VCBO|collector-base voltage|open emitter|−|50|V| |VCEO|collector-emitter voltage|open base|−|40|V| |VEBO|emitter-base voltage|open collector|−|5|V| |IC|collector current(DC)||−|100|mA| |ICM|peak collector current||−|200|mA| |IBM|peak base current||−|200|mA| |Ptot|totalpower dissipation|Tamb ≤25°C|−|200|mW| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||−|150|°C| |Tamb|operatingambient temperature||−65|+150|°C| |**Per device**|||||| |Ptot|totalpower dissipation|Tamb ≤25°C; note 1|−|300|mW| ## **Note** 1. Device mounted on an FR4 printed-circuit board. ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |**Per device**||||| |Rth(j-a)|thermal resistance fromjunction to ambient|note 1|416|K/W| ## **Note** 1. Device mounted on an FR4 printed-circuit board. 2004 Oct 15 3 NXP Semiconductors Product data sheet ## NPN/PNP general purpose transistors ## PUMZ1 ## **CHARACTERISTICS** Tamb = 25 °C unless otherwise specified. |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |**Per transistor; for the PNP transistor with negative polarity**|||||| |ICBO|collector-base cut-off current|IE= 0 A; VCB= 30 V|−|100|nA| |||IE= 0 A; VCB= 30 V; Tj= 150°C|−|10|μA| |IEBO|emitter-base cut-off current|IC= 0 A; VEB= 4 V|−|100|nA| |hFE|DC currentgain|IC= 1 mA; VCE= 6 V|120|−|| |VCEsat|collector-emitter saturation voltage|IC= 50 mA; IB= 5 mA; note 1|−|200|mV| |Cc|collector capacitance<br>TR1<br>TR2|IE= ie= 0 A; VCB= 12 V; f = 1 MHz|−<br>−|1.5<br>2.2|pF<br>pF| |fT|transition frequency|IC= 2 mA; VCE= 12 V; f = 100 MHz|100|−|MHz| ## **Note** 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Oct 15 4 NXP Semiconductors Product data sheet ## NPN/PNP general purpose transistors ## PUMZ1 ## **PACKAGE OUTLINE** **==> picture [481 x 587] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface-mounted package; 6 leads SOT363<br>D B E A X<br>y HE v M A<br>6 5 4<br>Q<br>pin 1<br>index A<br>A1<br>1 2 3 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>A1<br>UNIT A max bp c D E e e1 HE Lp Q v w y<br>1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25<br>mm 0.1 1.3 0.65 0.2 0.2 0.1<br>0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-08<br> SOT363 SC-88<br>06-03-16<br>**----- End of picture text -----**<br> 2004 Oct 15 5 NXP Semiconductors Product data sheet ## NPN/PNP general purpose transistors ## PUMZ1 ## **DATA SHEET STATUS** |**DATA SHEET STATUS**||| |---|---|---| |**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**| |Objective data sheet|Development|This document contains data from the objective specification for product<br>development.| |Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.| |Product data sheet|Production|This document contains theproduct specification.| ## **Notes** 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **DISCLAIMERS** **General** ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes** ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use** ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. ⎯ **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale** ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license** ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. ⎯ **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Oct 15 6 ## _**NXP Semiconductors**_ ## **Customer notification** This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ## **Contact information** For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com** ## © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands **==> picture [178 x 143] intentionally omitted <==** Date of release: 2004 Oct 15 R75/05/pp7 Document order number: 9397 750 13967
Updated at April 26, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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