PUMH4,115
Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 10 kohm
- Manufacturer: NEXPERIA
- Product type: Pre-Biased / Digital Bipolar Transistors
- Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:-; Resistor
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6 Pin
- Product Range: PUMH4 Series
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Transistor Case Style: SOT-363
- Base Input Resistor R1: 10kohm
- DC Current Gain hFE Min: 200hFE
- Base Emitter Resistor R2: -
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.065 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia ## _**DISCRETE SEMICONDUCTORS**_ **==> picture [359 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> DATA SHEET<br>**----- End of picture text -----**<br> ## **PEMH4; PUMH4** NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product data sheet 2004 Apr 14 Supersedes data of 2003 Oct 02 **==> picture [249 x 119] intentionally omitted <==** **NXP Semiconductors** **Product data sheet** ## **NPN/NPN resistor-equipped transistors; R1 = 10 k** Ω **, R2 = open** ## **PEMH4; PUMH4** ## **FEATURES** - Built-in bias resistors - Simplified circuit design - Reduction of component count - Reduced pick and place costs. ## **APPLICATIONS** - Low current peripheral driver - Replacement of general purpose transistors in digital applications ## **QUICK REFERENCE DATA** |**SYMBOL**|**PARAMETER**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---| |VCEO|collector-emitter<br>voltage|−|50|V| |IO|output current(DC)|−|100|mA| |TR1|NPN|−|−|−| |TR2|NPN|−|−|−| |R1|bias resistor|10|−|kΩ| |R2|bias resistor|open|−|−| - Control of IC inputs. ## **DESCRIPTION** NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). ## **PRODUCT OVERVIEW** |**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**MARKING CODE**(1)|**NPN/PNP**<br>**COMPLEMENT**|**PNP/PNP**<br>**COMPLEMENT**| |---|---|---|---|---|---| ||**PHILIPS**|**EIAJ**|||| |PEMH4|SOT666|−|H4|PEMD4|PEMB4| |PUMH4|SOT363|SC-88|H*4|PUMD4|PUMB4| ## **Note** 1. * = p: Made in Hong Kong. - = t: Made in Malaysia. ## **SIMPLIFIED OUTLINE, SYMBOL AND PINNING** **==> picture [497 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> PINNING<br>TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL<br>PIN DESCRIPTION<br>PEMH4 1 emitter TR1<br>6 5 4<br>handbook, halfpage 6 5 4<br>PUMH4 2 base TR1<br>3 collector TR2<br>R1<br>TR2 4 emitter TR2<br>TR1<br>5 base TR2<br>R1<br>6 collector TR1<br>1 2 3 1 2 3<br>Top view MAM453<br>**----- End of picture text -----**<br> 2004 Apr 14 2 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open ## PEMH4; PUMH4 ## **ORDERING INFORMATION** |**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**| |---|---|---|---| ||**NAME**|**DESCRIPTION**|**VERSION**| |PEMH4|−|Plastic surface mountedpackage; 6 leads|SOT666| |PUMH4|−|Plastic surface mountedpackage; 6 leads|SOT363| ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |**Per transistor**|||||| |VCBO|collector-base voltage|open emitter|−|50|V| |VCEO|collector-emitter voltage|open base|−|50|V| |VEBO|emitter-base voltage|open collector|−|5|V| |IO|output current(DC)||−|100|mA| |ICM|peak collector current||−|100|mA| |Ptot|total power dissipation<br>SOT363<br>SOT666|Tamb ≤25°C<br>note 1<br>notes 1 and 2|−<br>−|200<br>200|mW<br>mW| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||−|150|°C| |Tamb|operatingambient temperature||−65|+150|°C| |**Per device**|||||| |Ptot|total power dissipation<br>SOT363<br>SOT666|Tamb ≤25°C<br>note 1<br>notes 1 and 2|−<br>−|300<br>300|mW<br>mW| ## **Notes** 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. 2004 Apr 14 3 NXP Semiconductors Product data sheet ## NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open ## PEMH4; PUMH4 ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |**Per transistor**||||| |Rth(j-a)|thermal resistance from junction to ambient<br>SOT363<br>SOT666|Tamb ≤25°C<br>note 1<br>notes 1 and 2|625<br>625|K/W<br>K/W| |**Per device**||||| |Rth(j-a)|thermal resistance from junction to ambient<br>SOT363<br>SOT666|Tamb ≤25°C<br>note 1<br>notes 1 and 2|416<br>416|K/W<br>K/W| ## **Notes** 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. ## **CHARACTERISTICS** Tamb = 25 °C unless otherwise specified. |Tamb= 25°|C unless otherwise specified.|||||| |---|---|---|---|---|---|---| |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Per transistor**||||||| |ICBO|collector-base cut-off current|VCB= 50 V; IE= 0|−|−|100|nA| |ICEO|collector-emitter cut-off current|VCE= 30 V; IB= 0|−|−|1|μA| |||VCE= 30 V; IB= 0; Tj= 150°C|−|−|50|μA| |IEBO|emitter-base cut-off current|VEB= 5 V; IC= 0|−|−|100|nA| |hFE|DC currentgain|VCE= 5 V; IC= 1 mA|200|−|−|| |VCEsat|collector-emitter saturation voltage|IC= 10 mA; IB= 0.5 mA|−|−|150|mV| |R1|input resistor||7|10|13|kΩ| |Cc|collector capacitance|VCB= 10 V; IE= ie= 0; f = 1 MHz|−|−|2.5|pF| 2004 Apr 14 4 NXP Semiconductors Product data sheet ## NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open ## PEMH4; PUMH4 ## **PACKAGE OUTLINE** **==> picture [481 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface-mounted package; 6 leads SOT666<br>D A E X<br>S Y S<br>HE<br>6 5 4<br>pin 1 index<br>A<br>1 2 3 c<br>e1 bp w M A<br>Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A bp c D E e e1 HE Lp w y<br>0.6 0.27 0.18 1.7 1.3 1.7 0.3<br>mm 1.0 0.5 0.1 0.1<br>0.5 0.17 0.08 1.5 1.1 1.5 0.1<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-08<br> SOT666<br>06-03-16<br>**----- End of picture text -----**<br> 2004 Apr 14 5 NXP Semiconductors Product data sheet ## NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open ## PEMH4; PUMH4 **==> picture [481 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface-mounted package; 6 leads SOT363<br>D B E A X<br>y HE v M A<br>6 5 4<br>Q<br>pin 1<br>index A<br>A1<br>1 2 3 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>A1<br>UNIT A max bp c D E e e1 HE Lp Q v w y<br>1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25<br>mm 0.1 1.3 0.65 0.2 0.2 0.1<br>0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-08<br> SOT363 SC-88<br>06-03-16<br>**----- End of picture text -----**<br> 2004 Apr 14 6 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open ## PEMH4; PUMH4 ## **DATA SHEET STATUS** |**DATA SHEET STATUS**||| |---|---|---| |**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**| |Objective data sheet|Development|This document contains data from the objective specification for product<br>development.| |Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.| |Product data sheet|Production|This document contains theproduct specification.| ## **Notes** 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **DISCLAIMERS** **General** ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes** ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use** ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. ⎯ **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale** ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license** ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. ⎯ **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Apr 14 7 ## _**NXP Semiconductors**_ ## **Customer notification** This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ## **Contact information** For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com** ## © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands **==> picture [178 x 143] intentionally omitted <==** Date of release: 2004 Apr 14 R75/05/pp8 Document order number: 9397 750 13086
Updated at June 4, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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