PUMH19,115
Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 22 kohm
- Manufacturer: NEXPERIA
- Product type: Pre-Biased / Digital Bipolar Transistors
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6 Pin
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Transistor Case Style: TSSOP
- Base Input Resistor R1: 22kohm
- DC Current Gain hFE Min: 100hFE
- Base Emitter Resistor R2: -
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.043 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia **NPN/NPN resistor-equipped transistors; R1 = 22 k** Ω **, R2 = open** ## **PEMH19; PUMH19** **Rev. 03 — 15 November 2009** **Product data sheet** ## **1. Product profile** ## **1.1 General description** NPN/NPN Resistor-Equipped Transistors (RET). ## **Table 1. Product overview** |**Type number**|**Package**|**Package**|**NPN/PNP**<br>**complement**|**PNP/PNP**<br>**complement**| |---|---|---|---|---| ||**NXP**|**JEITA**||| |PEMH19|SOT666<br>-<br>PEMD19<br>PEMB19|||| |PUMH19|SOT363<br>SC-88<br>PUMD19<br>PUMB19|||| ## **1.2 Features** - Built-in bias resistor - Simplifies circuit design - Reduces component count - Reduces pick and place costs ## **1.3 Applications** - Low current peripheral driver - Control of IC inputs - Replaces general-purpose transistors in digital applications ## **1.4 Quick reference data** **Table 2. Quick reference data** |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |VCEO|collector-emitter voltage|open base|-|-|50|V| |IO|output current (DC)||-|-|100|mA| |R1|bias resistor 1 (input)||15.4|22|28.6|kΩ| **==> picture [81 x 42] intentionally omitted <==** **PEMH19; PUMH19** **NXP Semiconductors** **NPN/NPN resistor-equipped transistors; R1 = 22 k** Ω **, R2 = open** ## **2. Pinning information** ## **Table 3. Pinning** **==> picture [396 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Description Simplified outline Symbol<br>1 GND (emitter) TR1<br>6 5 4 6 5 4<br>2 input (base) TR1<br>3 output (collector) TR2 R1<br>4 GND (emitter) TR2 TR2<br>TR1<br>5 input (base) TR2<br>1 2 3 R1<br>6 output (collector) TR1 001aab555<br>1 2 3<br>sym090<br>**----- End of picture text -----**<br> ## **3. Ordering information** ## **Table 4. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |PEMH19|-<br>plastic surface mounted package; 6 leads<br>SOT666||| |PUMH19|SC-88<br>plastic surface mounted package; 6 leads<br>SOT363||| ## **4. Marking** ## **Table 5. Marking codes** |**Type number**|**Marking cod**~~**e**~~**[1]**| |---|---| |PEMH19|6F| |PUMH19|H6*| - [1] * = -: made in Hong Kong - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China © NXP B.V. 2009. All rights reserved. PEMH19_PUMH19_3 **Product data sheet** **Rev. 03 — 15 November 2009** **2 of 8** **PEMH19; PUMH19** **NXP Semiconductors** **NPN/NPN resistor-equipped transistors; R1 = 22 k** Ω **, R2 = open** ## **5. Limiting values** **Table 6. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**<br>**Parameter**<br>**Conditions**<br>**Min**<br>**Max**<br>**Unit**|**Symbol**<br>**Parameter**<br>**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |**Per transistor**|| |VCBO|collector-base voltage<br>open emitter<br>-<br>50<br>V| |VCEO|collector-emitter voltage<br>open base<br>-<br>50<br>V| |VEBO|emitter-base voltage<br>open collector<br>-<br>5<br>V| |IO|output current (DC)<br>-<br>100<br>mA| |ICM|peak collector current<br>-<br>100<br>mA| |Ptot|total power dissipation<br>Tamb≤25°C| ||SOT363<br>[1]<br>-<br>200<br>mW| ||SOT666<br>[1]<br>[2]<br>-<br>200<br>mW| |Tstg|storage temperature<br>−65<br>+150<br>°C| |Tj|junction temperature<br>-<br>150<br>°C| |Tamb|ambient temperature<br>−65<br>+150<br>°C| |**Per device**|| |Ptot|total power dissipation<br>Tamb≤25°C| ||SOT363<br>[1]<br>-<br>300<br>mW| ||SOT666<br>[1]<br>[2]<br>-<br>300<br>mW| - [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. - [2] Reflow soldering is the only recommended soldering method. ## **6.** ## **Thermal characteristics** |**Table 7.**<br>**Thermal characteristics**|**Table 7.**<br>**Thermal characteristics**| |---|---| |**Symbol**<br>**Parameter**<br>**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|| |**Per transistor**|| |Rth(j-a)|thermal resistance from<br>junction to ambient<br>in free air| ||SOT363<br>[1]<br>-<br>-<br>625<br>K/W| ||SOT666<br>[1]<br>[2]<br>-<br>-<br>625<br>K/W| |**Per device**|| |Rth(j-a)|thermal resistance from<br>junction to ambient<br>in free air| ||SOT363<br>[1]<br>-<br>-<br>416<br>K/W| ||SOT666<br>[1]<br>[2]<br>-<br>-<br>416<br>K/W| - [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. - [2] Reflow soldering is the only recommended soldering method. © NXP B.V. 2009. All rights reserved. PEMH19_PUMH19_3 **Product data sheet** **Rev. 03 — 15 November 2009** **3 of 8** **PEMH19; PUMH19** **NXP Semiconductors** **NPN/NPN resistor-equipped transistors; R1 = 22 k** Ω **, R2 = open** ## **7. Characteristics** |**Table 8.**|**Characteristics**| |---|---| |_Tamb = 25_|°_C unless otherwise specified._| |**Table 8.**<br>**Characteristics**<br>_Tamb = 25_°_C unless otherwise specified._|**Table 8.**<br>**Characteristics**<br>_Tamb = 25_°_C unless otherwise specified._| |---|---| |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |**Per transistor**|| |ICBO<br>collector-base cut-off<br>current|VCB= 50 V; IE= 0 A<br>-<br>-<br>100<br>nA| |ICEO<br>collector-emitter<br>cut-off current|VCE= 30 V; IB= 0 A<br>-<br>-<br>1<br>μA| ||VCE= 30 V; IB= 0 A;<br>Tj= 150°C<br>-<br>-<br>50<br>μA| |IEBO<br>emitter-base cut-off<br>current|VEB= 5 V; IC= 0 A<br>-<br>-<br>100<br>nA| |hFE<br>DC current gain|VCE= 5 V; IC= 1 mA<br>100<br>-<br>-| |VCEsat<br>collector-emitter<br>saturation voltage|IC= 10 mA; IB= 0.5 mA<br>-<br>-<br>150<br>mV| |R1<br>bias resistor 1 (input)|15.4<br>22<br>28.6<br>kΩ| |Cc<br>collector capacitance|VCB= 10 V; IE= ie= 0 A;<br>f = 1 MHz<br>-<br>-<br>2.5<br>pF| **==> picture [235 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 006aaa172<br>500<br>hFE<br>(1)<br>400<br>(2)<br>300<br>200 (3)<br>100<br>10 [−][1] 1 10 10 [2]<br>IC (mA)<br>VCE = 5 V<br>(1) Tamb = 100 °C<br>(2) Tamb = 25 °C<br>(3) Tamb = −40 °C<br>Fig 1. DC current gain as a function of collector<br>current; typical values<br>**----- End of picture text -----**<br> **==> picture [235 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 006aaa173<br>10 [3]<br>VCEsat<br>(mV)<br>10 [2]<br>(2) (1)<br>(3)<br>10<br>1 10 10 [2]<br>IC (mA)<br>IC/IB = 20<br>(1) Tamb = 100 °C<br>(2) Tamb = 25 °C<br>(3) Tamb = −40 °C<br>Fig 2. Collector-emitter saturation voltage as a<br>function of collector current; typical values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. PEMH19_PUMH19_3 **Product data sheet** **Rev. 03 — 15 November 2009** **4 of 8** **PEMH19; PUMH19** **NXP Semiconductors** **NPN/NPN resistor-equipped transistors; R1 = 22 k** Ω **, R2 = open** ## **8. Package outline** **==> picture [497 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2 1.1 1.7 0.6<br>1.8 0.8 1.5 0.5<br>6 5 4 0.45 6 5 4<br>0.15<br>0.3<br>0.1<br>2.2 1.35 1.7 1.3<br>2.0 1.15 pin 1 1.5 1.1<br>index pin 1 index<br>1 2 3<br>1 2 3<br>0.65 0.30.2 0.250.10 0.5 0.270.17 0.180.08<br>1.3 1<br>Dimensions in mm 06-03-16 Dimensions in mm 04-11-08<br>Fig 3. Package outline SOT363 (SC-88) Fig 4. Package outline SOT666<br>**----- End of picture text -----**<br> ## **9. Packing information** **Table 9. Packing methods** _The indicated -xxx are the last three digits of the 12NC ordering code.[[][1][]]_ |**Type number**<br>**Package**|**Description**|**Packing quantity**|**Packing quantity**|**Packing quantity**|**Packing quantity**| |---|---|---|---|---|---| |||**3000**|**4000**|**8000**|**10000**| |PEMH19<br>SOT666|2 mm pitch, 8 mm tape and reel|-<br>-<br>-315<br>-|||| ||4 mm pitch, 8 mm tape and reel|-<br>-115<br>-<br>-|||| |PUMH19<br>SOT363|4 mm pitch, 8 mm tape and reel; T1<br>[2]|-115<br>-<br>-<br>-135|||| ||4 mm pitch, 8 mm tape and reel; T2<br>[3]|-125<br>-<br>-<br>-165|||| - [1] For further information and the availability of packing methods, see Section 12. - [2] T1: normal taping - [3] T2: reverse taping © NXP B.V. 2009. All rights reserved. PEMH19_PUMH19_3 **Product data sheet** **Rev. 03 — 15 November 2009** **5 of 8** **PEMH19; PUMH19** **NXP Semiconductors** **NPN/NPN resistor-equipped transistors; R1 = 22 k** Ω **, R2 = open** ## **10. Revision history** |**Table 10.**<br>**Revision history**|**Table 10.**<br>**Revision history**||||| |---|---|---|---|---|---| |**Document ID**|**Release date**|**Data sheet status**|**Change notice**||**Supersedes**| |PEMH19_PUMH19_3|20091115|Product data sheet|-||PEMH19_PUMH19_2| |Modifications:|**•** This data|sheet was changed to reflect the|new company name NXP Semiconductors,||| ||including new legal definitions and disclaimers. No changes were made to the technical||||| ||content.||||| ||**•** Figure 3“<br>Package outline SOT363 (SC-88)<br>”<br>:updated||||| ||||||| |PEMH19_PUMH19_2|20050502|Product data sheet|-||PUMH19_1| |PUMH19_1|20031016|Product specification|-||-| © NXP B.V. 2009. All rights reserved. PEMH19_PUMH19_3 **Product data sheet** **Rev. 03 — 15 November 2009** **6 of 8** **PEMH19; PUMH19** **NXP Semiconductors** **NPN/NPN resistor-equipped transistors; R1 = 22 k** Ω **, R2 = open** ## **11. Legal information** ## **11.1 Data sheet status** |**Document statu**~~**s**~~**[1]**<br>**[2]**|**Product status[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **11.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **11.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ## **11.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **12. Contact information** For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** © NXP B.V. 2009. All rights reserved. PEMH19_PUMH19_3 **Product data sheet** **Rev. 03 — 15 November 2009** **7 of 8** **PEMH19; PUMH19** **NXP Semiconductors** **NPN/NPN resistor-equipped transistors; R1 = 22 k** Ω **, R2 = open** ## **13. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 3**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4**| |**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**9**|**Packing information . . . . . . . . . . . . . . . . . . . . . 5**| |**10**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6**| |**11**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7**| |11.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7| |11.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |11.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |11.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**12**|**Contact information. . . . . . . . . . . . . . . . . . . . . . 7**| |**13**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**| **==> picture [84 x 52] intentionally omitted <==** **All rights reserved.** Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2009.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 15 November 2009 Document identifier: PEMH19_PUMH19_3**
Updated at June 4, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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