PUMF11,115
Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 50 V, 100 mA, 22 kohm
- Manufacturer: NEXPERIA
- Product type: Pre-Biased / Digital Bipolar Transistors
- Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 6 Pin
- Product Range: -
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN and PNP Complement
- Transistor Case Style: TSSOP
- Base Input Resistor R1: 22kohm
- DC Current Gain hFE Min: 80hFE
- Base Emitter Resistor R2: 47kohm
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage Max PNP: 50V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.094 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## **DISCRETE SEMICONDUCTORS** ## **DATA SHEET** **==> picture [208 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> book, halfpage<br>MBD128<br>**----- End of picture text -----**<br> **PUMF11** NPN resistor-equipped transistor; PNP general purpose transistor 2002 Apr 09 **Philips Semiconductors** ## **NPN resistor-equipped transistor; PNP general purpose transistor** ## **FEATURES** - Resistor-equipped transistor and general purpose transistor in one package - 100 mA collector current - 50 V collector-emitter voltage - 300 mW total power dissipation - SOT363 package; replaces two SOT323 (SC-70) packaged devices on same PCB area - Reduced pick and place costs. ## **APPLICATIONS** - Power management switch for portable equipment, e.g. cellular phone and CD player - Switch for regulator. ## **DESCRIPTION** NPN resistor-equipped transistor and a PNP general purpose transistor in a SOT363 (SC-88) plastic package. ## **PUMF11** ## **QUICK REFERENCE DATA** |**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**| |---|---|---|---| |**TR1 (NPN)**|||| |VCEO|collector-emitter voltage|50|V| |IO|output current (DC)|100|mA| |R1|bias resistor|22|kΩ| |R2|bias resistor|47|kΩ| |**TR2 (PNP)**|||| |VCEO|collector-emitter voltage|50|V| |IC|collector current (DC)|100|mA| |ICM|peak collector current|200|mA| ## **PINNING** |**PINNING**|| |---|---| |**PIN**|**DESCRIPTION**| |1, 4|emitter<br>TR1; TR2| |2, 5|base<br>TR1; TR2| |6, 3|collector<br>TR1; TR2| ## **MARKING** |**MARKING**|| |---|---| |**TYPE NUMBER**|**MARKING CODE**(1)| |PUMF11|R1∗| ## **Note** 1. ∗ = p: Made in Hong Kong. - ∗ = t: Made in Malaysia. **==> picture [206 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> 6 5 4<br>6 5 4<br>TR2<br>TR1<br>R2 R1<br>1 2 3<br>Top view MAM465 1 2 3<br>**----- End of picture text -----**<br> Fig.1 Simplified outline (SOT363) and symbol. **==> picture [242 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> 2, 5 6, 3<br>1, 4<br>MBK120<br>Fig.2 Equivalent inverter symbol.<br>**----- End of picture text -----**<br> 2002 Apr 09 2 Philips Semiconductors ## NPN resistor-equipped transistor; PNP general purpose transistor ## PUMF11 ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |**Per transistor**|||||| |Ptot|total power dissipation|Tamb≤25°C; note 1|−|200|mW| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||−|150|°C| |Tamb|operating ambient temperature||−65|+150|°C| |**TR1 (NPN)**|||||| |VCBO|collector-base voltage|open emitter|−|50|V| |VCEO|collector-emitter voltage|open base|−|50|V| |VEBO|emitter-base voltage|open collector|−|10|V| |Vi|input voltage<br>positive<br>negative||−<br>−|+40<br>−10|V<br>V| |IO|output current (DC)||−|100|mA| |ICM|peak collector current||−|100|mA| |**TR2 (PNP)**|||||| |VCBO|collector-base voltage|open emitter|−|−50|V| |VCEO|collector-emitter voltage|open base|−|−40|V| |VEBO|emitter-base voltage|open collector|−|−5|V| |IC|collector current (DC)||−|−100|mA| |ICM|peak collector current||−|−200|mA| |**Per device**|||||| |Ptot|total power dissipation|Tamb≤25°C; note 1|−|300|mW| ## **Note** 1. Device mounted on an FR4 printed-circuit board. ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth j-a|thermal resistance from junction to ambient|in free air; note 1|416|K/W| ## **Note** 1. Device mounted on an FR4 printed-circuit board. 2002 Apr 09 3 Philips Semiconductors ## NPN resistor-equipped transistor; PNP general purpose transistor ## PUMF11 ## **CHARACTERISTICS** Tamb = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---|---| |**TR1 (NPN)**||||||| |ICBO|collector-base cut-off current|VCB= 50 V; IE= 0|−|−|100|nA| |ICEO|collector-emitter cut-off current|VCE= 30 V; IB= 0|−|−|1|µA| |||VCE= 30 V; IB= 0; Tj= 150°C|−|−|50|µA| |IEBO|emitter-base cut-off current|VEB= 5 V; IC= 0|−|−|0.12|mA| |hFE|DC current gain|VCE= 5 V; IC= 5 mA|80|−|−|| |VCEsat|collector-emitter saturation voltage|IC= 10 mA; IB= 0.5 mA|−|−|150|mV| |Vi(off)|input off voltage|VCE= 5 V; IC= 100µA|−|0.9|0.5|V| |Vi(on)|input on voltage|VCE= 0.3 V; IC= 2 mA|2|1.1|−|V| |R1|input resistor||15.4|22|28.6|kΩ| |R2<br>R1<br>-------|resistor ratio||1.7|2.1|2.6|| |Cc|collector capacitance|VCB= 10 V; IE= ie= 0; f = 1 MHz|−|−|2.5|pF| |**TR2 (PNP)**||||||| |ICBO|collector-base cut-off current|VCB=−30 V; IE= 0|−|−|−100|nA| |ICEO|collector-emitter cut-off current|VCB=−30 V; IB= 0; Tj= 150°C|−|−|−10|µA| |IEBO|emitter-base cut-off current|VEB=−4 V; IC= 0|−|−|−100|nA| |hFE|DC current gain|VCE=−6 V; IC=−1 mA|120|−|−|| |VCEsat|saturation voltage|IC=−50 mA; IB=−5 mA; note 1|−|−|−200|mV| |Cc|collector capacitance|VCB=−12 V; IE= ie= 0; f = 1 MHz|−|−|2.2|pF| |fT|transition frequency|VCE=−12 V; IC=−2 mA; f = 100 MHz|100|−|−|MHz| ## **Note** 1. Device mounted on an FR4 printed-circuit board. ## **APPLICATION INFORMATION** **==> picture [242 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>handbook, halfpage<br>3<br>5<br>RBE(ext)<br>RB(ext)<br>6<br>R1<br>2<br>R2 1<br>MHC182<br>**----- End of picture text -----**<br> Fig.3 Typical power management circuit. 2002 Apr 09 4 Philips Semiconductors ## NPN resistor-equipped transistor; PNP general purpose transistor ## PUMF11 ## **PACKAGE OUTLINE** ## **Plastic surface mounted package; 6 leads** ## **SOT363** **==> picture [495 x 590] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A X<br>y HE v M A<br>6 5 4<br>Q<br>pin 1<br>index A<br>A1<br>1 2 3 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>A1<br>UNIT A max bp c D E e e1 HE Lp Q v w y<br>1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25<br>mm 0.1 1.3 0.65 0.2 0.2 0.1<br>0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br> SOT363 SC-88 97-02-28<br>**----- End of picture text -----**<br> 2002 Apr 09 5 Philips Semiconductors ## NPN resistor-equipped transistor; PNP general purpose transistor ## PUMF11 ## **DATA SHEET STATUS** |**DATA SHEET STATUS**||| |---|---|---| |**DATA SHEET STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITIONS**| |Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.| |Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.| |Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Changes will be<br>communicated according to the Customer Product/Process Change<br>Notifcation (CPCN) procedure SNW-SQ-650A.| ## **Notes** 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. ## **DEFINITIONS** **Short-form specification** The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. **Limiting values definition** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ## **DISCLAIMERS** **Life support applications** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes** Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Apr 09 6 Philips Semiconductors NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 ## **NOTES** 2002 Apr 09 7 ## **Philips Semiconductors – a worldwide company** ## **Contact information** For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . © Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **==> picture [214 x 95] intentionally omitted <==** Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Apr 09 Document order number: 9397 750 09388
Updated at June 4, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →