PUMD17,115

Bipolar Transistor Array, NPN, PNP, 50 V, 50 V, 100 mA, 100 mA, 200 mW

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Manufacturer: NEXPERIA
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:60hFE; Transistor Case Style:SOT-363;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: NPN, PNP
Power Dissipation NPN: 200mW
Power Dissipation PNP: 200mW
Transistor Case Style: SOT-363
Transition Frequency NPN: -
Transition Frequency PNP: -
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 60hFE
DC Current Gain hFE Min PNP: 60hFE
Continuous Collector Current NPN: 100mA
Continuous Collector Current PNP: 100mA
Collector Emitter Voltage Max NPN: 50V
Collector Emitter Voltage Max PNP: 50V

Delivery and price
Units per pack	1500
Price	0.064 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 16, 2026