PSMN9R0-30LL

## NextPower MOSFETs 

Smaller, Faster, Cooler 

## NextPower 25 V & 30 V MOSFETs in LFPAK (Power-SO8) 

NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAK 

As a power design engineer, compromise is never far from your mind. Do I choose a low RDS(on) device and accept the higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find that the package options are no longer ideal in my application? 

The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise… 

Many competitors focus only on optimising RDS(on) and Qg. As Qg gets lower then losses due to Qoss and Qgd become more significant. NextPower uses Superjunction technology to provide the optimum balance between low RDS(on), low Qoss, low Qg(tot) and Qgd to give optimum switching performance. NextPower delivers superior SOA performance, and low Qoss reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest RDS(on) with sub 1 mΩ types at both 25 V and 30 V. 

LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect solder defects as is common with QFN style Power-SO8 packages. 

## **Key benefits** 

- } High efficiency in power switching applications 

- } Industry’s lowest RDS(on) Power-SO8 - Less than 1 mΩ at 25 V and 30 V 

- } Low Qoss for reduced output losses between DRAIN & SOURCE 

- } Low Qgd for reduced switching losses and high frequency switching 

- } 20 V rated GATE provides better tolerance to voltage transients than lateral MOSFET types 

- } Superior ‘Safe Operating Area’ performance compared to other Trench MOSFET vendors 

- } Optimum switching performance under light & heavy load conditions 

- } LFPAK package for compatibility with other vendor Power-SO8 types 

- } Eliminates costly X-ray inspection – LFPAK solder joints can be optically inspected 

## **Key applications** 

   - } Synchronous buck regulators 

   - } DC-DC conversion 

   - } Voltage regulator modules (VRM) 

   - } Power OR-ing 

- } Optimised for 4.5 V gate drive voltage 

2       NextPower MOSFETs - Visit us at www.nxp.com/mosfets 

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## Benefits of Superjunction technology 

Many suppliers focus on two favourable indicators when defining MOSFET performance, but this only tells part of the story. 

The spider chart below shows the relative performance of NextPower versus the leading MOSFET vendors, comparing the six most important MOSFET parameters required for high-performance & high reliability switching applications. The outside edge of the graph represents the ‘best-in-class’ performance, whilst scoring towards the centre of the graph represents a weakness. 

- } Low RDS(on) gives low I[2] R losses and superior performance when used in a SYNC FET or power OR-ing application 

- } Low Qoss gives reduced losses between the drain & source terminals since the energy stored in the output capacitance (Coss) is wasted whenever the voltage changes across the output terminals 

- } SOA performance provides tolerance to overload & fault conditions. The graph shows the maximum allowable current for a 1 mS pulse at VDS=10 V 

- } Low Miller charge (QGD) gives reduced switching losses between the MOSFET’s drain & source terminals when the MOSFET turns ON or turns OFF 

- } Low gate charge (QG) gives reduced losses in the gate drive circuit since less energy is required to turn the MOSFET ON & OFF 

- } Superior junction temperature rating, Tj(max), is proof that LFPAK is the most rugged Power-SO8 package available. LFPAK is the best choice for demanding environments and where high reliability is required 

## Comparison of NextPower technology with key competitor types 

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RDS(on)max<br>@ Vgs = 4.5 V<br>Qoss FOM Tj(max) NXP<br>Competitor A<br>Competitor B<br>SOA rating Combined QG &<br>QGD FOM<br>**----- End of picture text -----**<br>


NextPower MOSFETs - Visit us at www.nxp.com/mosfets 3 

## Superjunction technology 

NextPower MOSFETs use ‘Superjunction’ silicon technology to deliver the optimum balance between low RDS, low QG(tot), low QGD, high SOA performance and low Coss at 25 V and 30 V. 

Superjunction technology combines the benefits of a lateral MOSFET, (low Qg(tot) and low QGD) with the benefits of a Trench-MOSFET (low RDS(on) and 20 V rugged GATE rating) resulting in a uniquely balanced specification. 

NextPower uses an optimized balance of the different resistance elements in the MOSFET to achieve a lower on-resistance for every cell. The low cell resistance means that NextPower types typically require fewer cells than competitor devices to achieve the same RDS(on), and a lower cell count provides lower QG(tot), low QGD, low Coss and superior ‘Safe operating area’  ruggedness. 

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Source<br>n+<br>Gate<br>p-Body<br>n-Type p-Type<br>DRIFT REGION PILLARS<br>Drain<br>**----- End of picture text -----**<br>


_NextPower technology uses p-Type pillars to improve the breakdown voltage in the OFF state, and a heavily doped n-Type drift region to achieve exceptionally low ON resistance._ 

_Since fewer cells are required to achieve a given RDS rating, then gate charge (QG), Miller charge (QGD), output capacitance (Coss) are all reduced and optimum ruggedness (denoted by the safe operating area characteristics) is achieved._ 

## NextPower types – parametric data 

The 25 V and 30 V types shown below are recommended for synchronous buck regulators, the low RDS(on) types are also highly recommended for Power OR-ing applications and  low voltage isolated power supply topologies. 

## **25 V NextPower types** 

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Type Voltage (V) VGSR= 4.5 V (mΩ)DS(on)typ VGS = 4.5 V (nC)QG(typ) VGSQ= 4.5 V (nC)GD(typ) COSS (pF)<br>PSMN0R9-25YLC 25 0.95 51 14 1437<br>PSMN1R1-25YLC 25 1.2 39 11 1121<br>PSMN1R2-25YLC 25 1.35 31 8.3 994<br>PSMN1R7-25YLC 25 2 28 7.8 880<br>PSMN1R9-25YLC 25 2.2 27 7.4 761<br>PSMN2R2-25YLC 25 2.6 18 5.2 617<br>PSMN2R9-25YLC 25 3.45 16 4.4 501<br>PSMN3R2-25YLC 25 3.7 14 4 462<br>PSMN3R7-25YLC 25 4.25 10.1 3 370<br>PSMN4R0-25YLC 25 4.5 10.9 3.5 354<br>**----- End of picture text -----**<br>


4       NextPower MOSFETs - Visit us at www.nxp.com/mosfets 

## **30 V NextPower types** 

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Type Voltage (V) VGSR= 4.5 V (mΩ)DS(on)typ VGS = 4.5 V (nC)QG(typ) VGSQ= 4.5 V (nC)GD(typ) COSS (pF)<br>PSMN1R0-30YLC 30 1.1 50 14.6 1210<br>PSMN1R2-30YLC 30 1.35 38 11.6 977<br>PSMN1R5-30YLC 30 1.65 30 8.6 860<br>PSMN2R2-30YLC 30 2.3 26 8 651<br>PSMN2R6-30YLC 30 3.1 18 5.5 549<br>PSMN3R2-30YLC 30 3.75 14.2 4.1 432<br>PSMN3R7-30YLC 30 4.25 14 4.2 380<br>PSMN4R1-30YLC 30 4.75 11 3.5 316<br>PSMN4R5-30YLC 30 5.1 9.6 2.85 288<br>**----- End of picture text -----**<br>


## Benchmarking 

## Comparing NXP NextPower with NXP Trench 6 technology 

Benchmark testing for NextPower types shows a 1% efficiency gain compared to equivalent Trench 6 types: 

## **30 V NextPower types** 

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Type Voltage (V) VGSR= 4.5 V (mΩ)DS(on)typ VGS = 4.5 V (nC)QG(typ) VGSQ= 4.5 V (nC)GD(typ) COSS (pF)<br>PSMN1R5-30YL 30 1.8 36 8.7 1082<br>PSMN1R5-30YLC 30 1.65 30 8.6 860<br>PSMN4R0-30YL 30 3.7 18 4.3 469<br>PSMN4R5-30YLC 30 5.1 9.6 2.85 288<br>**----- End of picture text -----**<br>


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NextPower: PSMN4R5-30YLC / PSMN1R5-30YLC<br>Trench 6: PSMN4R0-30YL / PSMN1R5-30YL<br>0  5  10  15  20  25  30<br>ILOAD (Amps)<br>Efficiency<br>**----- End of picture text -----**<br>


## **Test conditions** 

- } Input Voltage: 12 V } Output Voltage: 1.2 V } 1 phase } Frequency: 500 KHz 

- } Air flow: 200 LFM 

NextPower MOSFETs - Visit us at www.nxp.com/mosfets 5 

## Comparing NextPower with a leading competitor 

Benchmarking tests show that NextPower types deliver 1% efficiency gains compared to the nearest competitor types: 

## **Test conditions** 

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PSMN4R0-25YLC/PSMN1R1-25YLC<br>Competitor<br>0  5  10  15  20  25  30<br> ILOAD (Amps)<br>Efficiency<br>**----- End of picture text -----**<br>


- } Input Voltage: 12 V 

- } Output Voltage: 1.2 V } 1 phase } Frequency: 500 KHz 

- } Air flow: 200 LFM 

## Safe Operating Area comparison 

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10<br>9<br>8<br>7<br>NXP<br>6 Competitor 1<br>ON =<br>Competitor 2<br>5<br>ron ~<br>4 oN<br>3<br>oo LUNN SN<br>2 oo<br>LUNN SN<br>1 oN<br>0<br>NXP Trench 6 and previous generation NXP NextPower and latest generation<br>from competition from competition<br>SOA Current (Amp)<br>**----- End of picture text -----**<br>


Condition: SOA Drain current (Amp) @ Vds=10 V, 10 ms pulse for a 5 mΩ (@ 10 V) in Power SO8 

## **Why Choose LFPAK?** 

- } Reduced electrical resistance and inductance 

- } Outstanding thermal performance 

- } Rugged design, qualified to AEC-Q101 (stringent automotive standard) 

- } Easy to handle, solder and inspect 

- } Power-SO8 footprint compatible 

6       NextPower MOSFETs - Visit us at www.nxp.com/mosfets 

## NextPower types - Coming in Q3-2011 

Further NextPower types are planned for release in Q3-2011. Preliminary data is provided in the tables below. These types are recommended for control-FET applications in synchronous-buck regulators. YLB types have an integrated snubber circuit to further reduce spiking levels for critical applications. 

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Type  Voltage (V) RDS(on)typ<br> VGS = 4.5 V (mΩ)<br>PSMN5R0-25YLB 25 6.1<br>PSMN5R0-25YLC 25 6.6<br>PSMN6R0-25YLC 25 7.3<br>PSMN7R3-25YLC 25 8.9<br>PSMN9R0-25YLC 25 10.7<br>PSMN011-25YLC 25 12.7<br>**----- End of picture text -----**<br>


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Type   Voltage (V) RDS(on)typ<br> VGS = 4.5 V (mΩ)<br>PSMN6R0-30YLB 30 6.7<br>PSMN6R0-30YLC 30 7.6<br>PSMN7R0-30YLC 30 8.5<br>PSMN8R6-30YLC 30 10.3<br>PSMN011-30YLC 30 11.7<br>PSMN012-30YLC 30 13.8<br>**----- End of picture text -----**<br>


types in _bold red italic underline_ represent products in development 

## **Part numbering for NXP MOSFETs** 

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MOSFET<br>MOSFET<br>MOSFET BRAND NAME N-ch or type on-resistanceR - MOSFET voltage BVDS Package type Gate threshold voltage special featuresNextPower<br>P-ch DS(on)<br>P S M N 1 R 7 - 25 Y L C<br>N = N-ch R95 = 0.95 mΩ - 25 = 25 V B = DSOT404 [2] PAK L = Logic-level C = Optimised for Q<br>g(fom)<br>P = P-ch 1R7 = 1.7 mΩ - 30 = 30 V D = DPAK S = Standard-level B = integrated<br>SOT428  snubber<br>X = E = I [2] PAK<br>014 = 14 mΩ - 40 = 40 V<br>Dual N-ch SOT226<br>Y = 125 = 125 mΩ - 60 = 60 V K = SO8<br>Dual P-ch SOT96<br>Power Silicon Max Z = - 80 = 80 V L = QFN3333<br>N-ch + P-ch SOT873<br>- 100 = 100 V P = TO220<br>SOT78<br>Y = LFPAK<br>- 110 = 110 V SOT669 &<br>SOT1023<br>X = TO220F<br>- 120 = 120 V (FULLPACK)<br>SOT186A<br>**----- End of picture text -----**<br>


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## www.nxp.com 

© 2011 NXP Semiconductors N.V. 

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Date of release: May 2011 Document order number: 9397 750 17100 Printed in the Netherlands