PSMN0R9-30YLDX

## **PSMN0R9-30YLD** 

**N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 14 December 2015** 

**Product data sheet** 

## **1. General description** 

300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 

## **2. Features and benefits** 

- 300 Amp capability 

- Avalanche rated, 100 % tested at I(as) = 190 Amps 

- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies 

- Superfast switching with soft-recovery; s-factor > 1 

- Low spiking and ringing for low EMI designs 

- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C 

- Optimised for 4.5 V gate drive 

- Low parasitic inductance and resistance 

- High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 150 °C 

- Wave solderable; exposed leads for optimal visual solder inspection 

## **3. Applications** 

- On-board DC-to-DC solutions for server and telecommunications 

- Secondary-side synchronous rectification in telecommunication applications 

- • Voltage regulator modules (VRM) 

- Point-of-Load (POL) modules 

- Power delivery for V-core, ASIC, DDR, GPU, VGA and system components 

- • Brushed and brushless motor control 

- Power OR-ing 

## **4. Quick reference data** 

**Table 1. Quick reference data** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|VDS|drain-source voltage|25 °C ≤ Tj≤ 150 °C||-|-|30|V|



**Nexperia** 

**PSMN0R9-30YLD** 

**N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|ID|drain current|Tmb= 25 °C; VGS= 10 V; Fig. 2|[1]|-|-|300|A|
|Ptot|total power dissipation|Tmb= 25 °C;Fig. 1||-|-|291|W|
|Tj|junction temperature|||-55|-|150|°C|
|**Static characteristics**||||||||
|RDSon|drain-source on-state<br>resistance|VGS= 4.5 V; ID= 25 A; Tj= 25 °C;<br>Fig. 10||-|0.79|1.09|mΩ|
|||VGS= 10 V; ID= 25 A; Tj= 25 °C;<br>Fig. 10||-|0.65|0.87|mΩ|
|**Dynamic characteristics**||||||||
|QGD|gate-drain charge|VGS= 4.5 V; ID= 25 A; VDS= 15 V;<br>Fig. 12<br>; Fig. 13||-|13.5|-|nC|
|QG(tot)|total gate charge|VGS= 10 V; ID= 25 A; VDS= 15 V;<br>Fig. 12<br>; Fig. 13||-|109|-|nC|
|**Source-drain diode**||||||||
|S|softness factor|IS= 25 A; VGS= 0 V; dIS/dt = -100 A/µs;<br>VDS= 15 V;Fig. 16||-|0.9|-||



[1] 300A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, Thermal design and operating temperature. 

## **5. Pinning information** 

## **Table 2. Pinning information** 

|**Pin**|**Symbol**|**Description**|**Simplified outline**|**Graphic symbol**|
|---|---|---|---|---|
|1|S|source|3<br>2<br>1<br>4<br>**LFPAK56; Power-**<br>**SO8 (SOT1023)**|S<br>D<br>G<br>_mbb076_|
|2|S|source|||
|3|S|source|||
|4|G|gate|||
|mb|D|mounting base; connected to<br>drain|||



## **6. Ordering information** 

**Table 3. Ordering information** 

|**Type number**|**Package**|**Package**|**Package**|
|---|---|---|---|
||**Name**|**Description**|**Version**|
|PSMN0R9-30YLD|LFPAK56;<br>Power-SO8|Plastic single-ended surface-mounted package<br>(LFPAK56); 4 leads|SOT1023|



PSMN0R9-30YLD All information provided in this document is subject to legal disclaimers. 

© Nexperia B.V. 2017. All rights reserved **2 / 13** 

**Product data sheet** 

**14 December 2015** 

**Nexperia** 

**PSMN0R9-30YLD** 

**N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

## **7. Marking** 

|**7.**<br>**Marking**||
|---|---|
|**Table 4.**<br>**Marking codes**||
|**Type number**|**Marking code**|
|PSMN0R9-30YLD|0D930L|



## **8. Limiting values** 

**Table 5. Limiting values** 

_In accordance with the Absolute Maximum Rating System (IEC 60134)._ 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VDS|drain-source voltage|25 °C ≤ Tj≤ 150 °C||-|30|V|
|VDGR|drain-gate voltage|25 °C ≤ Tj≤ 150 °C; RGS= 20 kΩ||-|30|V|
|VGS|gate-source voltage|||-20|20|V|
|Ptot|total power dissipation|Tmb= 25 °C; Fig. 1||-|291|W|
|ID|drain current|VGS= 10 V; Tmb= 25 °C; Fig. 2|[1]|-|300|A|
|||VGS= 10 V; Tmb= 100 °C; Fig. 2||-|284|A|
|IDM|peak drain current|pulsed; tp≤ 10 µs; Tmb= 25 °C; Fig. 3||-|1800|A|
|Tstg|storage temperature|||-55|150|°C|
|Tj|junction temperature|||-55|150|°C|
|Tsld(M)|peak soldering temperature|||-|260|°C|
|VESD|electrostatic discharge voltage|HBM||2000|-|V|
|**Source-drain diode**|||||||
|IS|source current|Tmb= 25 °C||-|242|A|
|ISM|peak source current|pulsed; tp≤ 10 µs; Tmb= 25 °C||-|1800|A|
|**Avalanche ruggedness**|||||||
|IAS|non-repetitive avalanche<br>current|Vsup≤ 30 V; VGS= 10 V; Tj(init)= 25 °C;<br>RGS= 50 Ω|[2]|-|190|A|
|EDS(AL)S|non-repetitive drain-source<br>avalanche energy|VGS= 10 V; Tj(init)= 25 °C; ID= 25 A;<br>Vsup≤ 30 V; RGS= 50 Ω; unclamped;<br>tp= 6.1 ms|[2]|-|2987|mJ|



[1] 300A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, Thermal design and operating temperature. 

[2] Protected by 100% test 

PSMN0R9-30YLD 

All information provided in this document is subject to legal disclaimers. 

© Nexperia B.V. 2017. All rights reserved 

**Product data sheet** 

**14 December 2015** 

**3 / 13** 

**Nexperia** 

**PSMN0R9-30YLD** 

## **N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

**==> picture [497 x 530] intentionally omitted <==**

**----- Start of picture text -----**<br>
03ne36 aaa-020460<br>120 500<br>ID<br>Pder (A)<br>(%) 400<br>80<br>300<br>(1)<br>200<br>40<br>100<br>0 0<br>0 50 100 150 200 0 25 50 75 100 125 150 175 200<br>Tmb (°C) Tmb (°C)<br>(1) 300A continuous current has been successfully<br>Fig. 1. Normalized total power dissipation as a<br>demonstrated during application tests. Practically<br>function of mounting base temperature<br>the current will be limited by PCB, Thermal design<br>and operating temperature<br>Fig. 2. Continuous drain current as a function of<br>mounting base temperature<br>aaa-020461<br>10 [4]<br>ID<br>(A)<br>Limit RDSon = VDS / ID<br>10 [3]<br>tp = 10 us<br>10 [2] 100 us<br>10 DC 1 ms<br>10 ms<br>100 ms<br>1<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage<br>**----- End of picture text -----**<br>


## **9. Thermal characteristics** 

**Table 6. Thermal characteristics** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Rth(j-mb)|thermal resistance<br>from junction to<br>mounting base|Fig. 4||-|0.35|0.43|K/W|
|PSMN0R9-30YLD||All informationprovided in this document is subject to legal disclaimers.|||©Nexperia|B.V. 2017. All|rights reserved|
|**Product data sheet**||**14 December 2015**|||||<br>**4 / 13**|



**Nexperia** 

**PSMN0R9-30YLD** 

**N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Rth(j-a)|thermal resistance<br>from junction to<br>ambient|Fig. 5||-|50|-|K/W|
|||Fig. 6||-|125|-|K/W|



**==> picture [486 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
003aag977<br>1<br>Z<br>th(j-mb)<br>(K/W)<br>δ = 0.5<br>10 [-1]<br>0.2<br>0.1<br>0.05<br>10 [-2] 0.02 P δ = T tp<br>single shot<br>tp t<br>T<br>10 [-3]<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s) 1<br>Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration<br>**----- End of picture text -----**<br>


**==> picture [136 x 136] intentionally omitted <==**

**==> picture [136 x 136] intentionally omitted <==**

_aaa-005750 aaa-005751_ **Fig. 5. PCB layout for thermal resistance junction to Fig. 6. PCB layout for thermal resistance junction to ambient 1” square pad; FR4 Board; 2oz copper ambient minimum footprint; FR4 Board; 2oz copper** 

## **10. Characteristics** 

|**10. Characteristics**|**10. Characteristics**|||||||
|---|---|---|---|---|---|---|---|
|**Table 7.**<br>**Characteristics**||||||||
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|**Static characteristics**||||||||
|V(BR)DSS|drain-source<br>breakdown voltage|ID= 250 µA; VGS= 0 V; Tj= 25 °C||30|-|-|V|
|||ID= 250 µA; VGS= 0 V; Tj= -55 °C||27|-|-|V|
|VGS(th)|gate-source threshold<br>voltage|ID= 1 mA; VDS= VGS; Tj= 25 °C||1.2|1.5|2.2|V|



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PSMN0R9-30YLD 

© Nexperia B.V. 2017. All rights reserved **5 / 13** 

**Product data sheet** 

**14 December 2015** 

**Nexperia** 

**PSMN0R9-30YLD** 

**N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|ΔVGS(th)/ΔT|gate-source threshold<br>voltage variation with<br>temperature|25 °C ≤ Tj≤ 150 °C||-|-4.5|-|mV/K|
|IDSS|drain leakage current|VDS= 24 V; VGS= 0 V; Tj= 25 °C||-|-|1|µA|
|||VDS= 24 V; VGS= 0 V; Tj= 125 °C||-|3.7|-|µA|
|IGSS|gate leakage current|VGS= 16 V; VDS= 0 V; Tj= 25 °C||-|-|100|nA|
|||VGS= -16 V; VDS= 0 V; Tj= 25 °C||-|-|100|nA|
|RDSon|drain-source on-state<br>resistance|VGS= 4.5 V; ID= 25 A; Tj= 25 °C;<br>Fig. 10||-|0.79|1.09|mΩ|
|||VGS= 4.5 V; ID= 25 A; Tj= 150 °C;<br>Fig. 10<br>; Fig. 11||-|-|1.8|mΩ|
|||VGS= 10 V; ID= 25 A; Tj= 25 °C;<br>Fig. 10||-|0.65|0.87|mΩ|
|||VGS= 10 V; ID= 25 A; Tj= 150 °C;<br>Fig. 10<br>; Fig. 11||-|-|1.44|mΩ|
|RG|internal gate<br>resistance (AC)|f = 1 MHz||-|1.4|-|Ω|
|**Dynamic characteristics**||||||||
|QG(tot)|total gate charge|ID= 25 A; VDS= 15 V; VGS= 10 V;<br>Fig. 12<br>; Fig. 13||-|109|-|nC|
|||ID= 25 A; VDS= 15 V; VGS= 4.5 V;<br>Fig. 12<br>; Fig. 13||-|51|-|nC|
|||ID= 0 A; VDS= 0 V; VGS= 0 V||-|99|-|nC|
|QGS|gate-source charge|ID= 25 A; VDS= 15 V; VGS= 4.5 V;<br>Fig. 12<br>; Fig. 13||-|15.3|-|nC|
|QGS(th)|pre-threshold gate-<br>source charge|||-|10.5|-|nC|
|QGS(th-pl)|post-threshold gate-<br>source charge|||-|4.8|-|nC|
|QGD|gate-drain charge|||-|13.5|-|nC|
|VGS(pl)|gate-source plateau<br>voltage|ID= 25 A; VDS= 15 V; Fig. 12<br>;Fig. 13||-|2.4|-|V|
|Ciss|input capacitance|VDS= 15 V; VGS= 0 V; f = 1 MHz;<br>Tj= 25 °C; Fig. 14||-|7668|-|pF|
|Coss|output capacitance|||-|2914|-|pF|
|Crss|reverse transfer<br>capacitance|||-|445|-|pF|
|td(on)|turn-on delay time|VDS= 15 V; RL= 0.6 Ω; VGS= 4.5 V;<br>RG(ext)= 5 Ω||-|38.1|-|ns|
|tr|rise time|||-|49.8|-|ns|
|td(off)|turn-off delay time|||-|63|-|ns|
|tf|fall time|||-|42.6|-|ns|



PSMN0R9-30YLD All information provided in this document is subject to legal disclaimers. 

© Nexperia B.V. 2017. All rights reserved 

**Product data sheet** 

**14 December 2015** 

**6 / 13** 

**Nexperia** 

**PSMN0R9-30YLD** 

**N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Qoss|output charge|VGS= 0 V; VDS= 15 V; f = 1 MHz;<br>Tmb= 25 °C||-|83.11|-|nC|
|**Source-drain diode**||||||||
|VSD|source-drain voltage|IS= 25 A; VGS= 0 V; Tj= 25 °C; Fig. 15||-|0.76|1.2|V|
|trr|reverse recovery time|IS= 25 A; dIS/dt = -100 A/µs; VGS= 0 V;<br>VDS= 15 V;Fig. 16||-|52|-|ns|
|Qr|recovered charge||[1]|-|67|-|nC|
|ta|reverse recovery rise<br>time|||-|27.4|-|ns|
|tb|reverse recovery fall<br>time|||-|24.7|-|ns|
|S|softness factor|||-|0.9|-||



[1] includes capacitive recovery 

**==> picture [497 x 248] intentionally omitted <==**

**----- Start of picture text -----**<br>
aaa-011698 aaa-011700<br>180 6<br>ID 10 V VGS = 3 V 2.8 V RDSon<br>(A) (mΩ)<br>5<br>135<br>4<br>2.6 V<br>90 3<br>2<br>45<br>2.4 V<br>1<br>2.2 V<br>0 0<br>0 0.5 1 1.5 2 2.5 0 2 4 6 8 10 12 14 16<br>VDS (V) VGS (V)<br>Fig. 7. Output characteristics; drain current as a Fig. 8. Drain-source on-state resistance as a function<br>function of drain-source voltage; typical values of gate-source voltage; typical values<br>**----- End of picture text -----**<br>


PSMN0R9-30YLD 

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**Product data sheet** 

**7 / 13** 

**Nexperia** 

**PSMN0R9-30YLD** 

## **N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

**==> picture [497 x 506] intentionally omitted <==**

**----- Start of picture text -----**<br>
aaa-011701 aaa-011702<br>200 12<br>ID RDSon<br>(A) (mΩ) 2.4 V 2.6 V 2.8 V<br>160<br>9<br>120<br>6<br>80<br>3 3 V<br>40 150°C Tj = 25°C<br>4.5 V<br>VGS = 10 V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 25 50 75 100 125 150 175 200<br>VGS (V) ID (A)<br>Fig. 9. Transfer characteristics; drain current as a Fig. 10. Drain-source on-state resistance as a function<br>function of gate-source voltage; typical values of drain current; typical values<br>003aal037<br>2<br>a VDS<br>1.6 10 V ID<br>VGS(pl)<br>1.2<br>VGS = 4.5 V VGS(th)<br>0.8 VGS<br>QGS2<br>QGS1<br>0.4 QGS QGD<br>QG(tot)<br>003aaa508<br>0-60 -30 0 30 60 90 120 150 180 Fig. 12. MOSFET transistor: Gate charge waveform<br>Tj (°C) definitions<br>Fig. 11. Normalized drain-source on-state resistance<br>factor as a function of junction temperature<br>**----- End of picture text -----**<br>


PSMN0R9-30YLD 

All information provided in this document is subject to legal disclaimers. **14 December 2015** 

© Nexperia B.V. 2017. All rights reserved 

**Product data sheet** 

**8 / 13** 

**Nexperia** 

**PSMN0R9-30YLD** 

## **N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

**==> picture [497 x 505] intentionally omitted <==**

**----- Start of picture text -----**<br>
aaa-011703 aaa-011705<br>10 10 [5]<br>VGS C<br>(V) (pF)<br>8<br>10 [4]<br>6 Ciss<br>24 V<br>15 V Coss<br>4<br>V DS  = 6 V 10 [3]<br>2 Crss<br>0 10 [2]<br>0 20 40 60 80 100 120 10 [-1] 1 10 10 [2]<br>QG (nC) VDS (V)<br>Fig. 13. Gate-source voltage as a function of gate Fig. 14. Input, output and reverse transfer capacitances<br>charge; typical values as a function of drain-source voltage; typical<br>values<br>aaa-011706 003aal160<br>10 [3]<br>IS ID<br>(A) (A)<br>10 [2]<br>trr<br>ta tb<br>10 0<br>0.25 IRM<br>1<br>150°C Tj = 25°C<br>IRM<br>10 [-1]<br>0 0.2 0.4 0.6 0.8 1 1.2 t (s)<br>VSD (V)<br>Fig. 16. Reverse recovery timing definition<br>Fig. 15. Source current as a function of source-drain<br>voltage; typical values<br>**----- End of picture text -----**<br>


PSMN0R9-30YLD 

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**Product data sheet** 

**9 / 13** 

**Nexperia** 

**PSMN0R9-30YLD** 

**N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

## **11. Package outline** 

**==> picture [481 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Plastic single-ended surface-mounted package (LFPAK56); 4 leads SOT1023<br>**----- End of picture text -----**<br>


**==> picture [481 x 565] intentionally omitted <==**

**----- Start of picture text -----**<br>
E A A E1<br>b1 c1 (3x)b2<br>mounting<br>base D1<br>D<br>H<br>L<br>1 2 3 4 X<br>e b w A c<br>A1 C<br>θ<br>detail X Lp y C<br>0 2.5 5 mm<br>scale<br>Dimensions<br>Unit A A1 b b1 b2 c c1 D [(1)] D1 [(1)] E [(1)] E1 [(1)] e H L Lp w y θ<br>max 1.10 0.15 0.50 4.41 0.25 0.30 4.70 4.45 5.30 3.7 6.2 1.3 0.85 8 [°]<br>mm nom 0.85 1.27 0.25 0.1<br>min 0.95 0.00 0.35 3.62 0.19 0.24 4.45 4.95 3.5 5.9 0.8 0.40 0 [°]<br>Note<br>1. Plastic or metal protrusions of 0.15 mm per side are not included. sot1023_po<br>Outline References European Issue date<br>version IEC JEDEC JEITA projection<br>11-12-09<br>SOT1023<br>13-03-05<br>**----- End of picture text -----**<br>


## **Fig. 17. Package outline LFPAK56; Power-SO8 (SOT1023)** 

All information provided in this document is subject to legal disclaimers. 

PSMN0R9-30YLD **Product data sheet** 

© Nexperia B.V. 2017. All rights reserved 

**14 December 2015** 

**10 / 13** 

**Nexperia** 

**PSMN0R9-30YLD** 

## **N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

## **12. Legal information** 

## **12.1 Data sheet status** 

|**Document**<br>**status [1]**<br>**[2]**|**Product**<br>**status[3]**|**Definition**|
|---|---|---|
|Objective<br>[short] data<br>sheet|Development|This document contains data from<br>the objective specification for product<br>development.|
|Preliminary<br>[short] data<br>sheet|Qualification|This document contains data from the<br>preliminary specification.|
|Product<br>[short] data<br>sheet|Production|This document contains the product<br>specification.|



[1] Please consult the most recently issued document before initiating or completing a design. 

[2] The term 'short data sheet' is explained in section "Definitions". 

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 

## **12.2 Definitions** 

**Preview** — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

**Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 

**Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 

## **12.3 Disclaimers** 

**Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. 

In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 

Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of Nexperia. 

**Right to make changes** — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

**Suitability for use** — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

**Applications** — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 

Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. 

**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 

**Terms and conditions of commercial sale** — Nexperia 

products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. 

**No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the 

PSMN0R9-30YLD All information provided in this document is subject to legal disclaimers. **Product data sheet 14 December 2015** 

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**PSMN0R9-30YLD** 

## **N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

**Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 

**Non-automotive qualified products** — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. 

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. 

**Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 

## **12.4 Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

PSMN0R9-30YLD 

All information provided in this document is subject to legal disclaimers. 

© Nexperia B.V. 2017. All rights reserved 

**Product data sheet** 

**14 December 2015** 

**12 / 13** 

**Nexperia** 

**PSMN0R9-30YLD** 

**N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology** 

## **13. Contents** 

|**13. **|**Contents**|
|---|---|
|**1**|**General description ............................................... 1**|
|**2**|**Features and benefits ............................................1**|
|**3**|**Applications ........................................................... 1**|
|**4**|**Quick reference data ............................................. 1**|
|**5**|**Pinning information ...............................................2**|
|**6**|**Ordering information .............................................2**|
|**7**|**Marking ...................................................................3**|
|**8**|**Limiting values .......................................................3**|
|**9**|**Thermal characteristics .........................................4**|
|**10**|**Characteristics .......................................................5**|
|**11**|**Package outline ................................................... 10**|
|**12**|**Legal information .................................................11**|
|12.1|Data sheet status ............................................... 11|
|12.2|Definitions ...........................................................11|
|12.3|Disclaimers .........................................................11|
|12.4|Trademarks ........................................................ 12|



## © **Nexperia B.V. 2017. All rights reserved** 

For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com **Date of release: 14 December 2015** 

PSMN0R9-30YLD 

All information provided in this document is subject to legal disclaimers. 

© Nexperia B.V. 2017. All rights reserved 

**Product data sheet** 

**14 December 2015** 

**13 / 13**