PMST2369,115
Bipolar (BJT) Single Transistor, NPN, 15 V, 200 mA, 200 mW, SOT-323, Surface Mount
- Manufacturer: NEXPERIA
- Product type:
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:500MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:20hFE; T
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 500MHz
- Transistor Case Style: SOT-323
- DC Current Gain hFE Min: 20hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 200mA
- Collector Emitter Voltage Max: 15V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.058 € |
| Current stock | 25+ |
| Lead time | 30 days |
PMST2369 NPN switching transistor
Product specification Supersedes data of 1997 May 05
1999 Apr 22
DH I LI PS
Semiconductors
Philips Semiconductors
Product specification
PMST2369
a
## NPN switching transistor
## eee ee
## FEATURES
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PINNING<br>**----- End of picture text -----**<br>
e Low current (max. 200 mA) mA)
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current (max. (max. 200 mA) mA) | PIN | DESCRIPTION<br>switching applications, primarily in portable<br>consumer equipment.<br>°<br>transistor in a SOT323 SOT323 plastic package. °<br>{<br>TYPE NUMBER MARKING CODE") , 2 2<br>Top view MAMO62<br>Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol.<br>**----- End of picture text -----**<br>
## APPLICATIONS
- e High-speed switching applications, primarily in portable and consumer equipment.
## DESCRIPTION
NPN switching transistor in a SOT323 SOT323 plastic package.
MARKING
Note
1. *=-: Made in Hong Kong. * = t: Made in Malaysia.
LIMITING VALUES
|In accordance with the Absolute Maximum Rating System (IEC 134).|
|---|
|SYMBOL<br>PARAMETER<br>CONDITIONS<br>|MIN.<br>| MAX. | UNIT|
|‘Vea0 _[emitterbase votlage<br>__———opencolestor———SSCS~—SC“~*‘izSSSC*d‘<br>SCS|
|‘oy<br>_[peakbasecurent<br>——Ssd|SSS<br>~«*dIO<br>total<br>powerdissip**a**tion<br>Tamb S25°C;note 4<br>[- —-|200, [mw<br>Tay<br>[storagetemper te SidSSCS~HSC*d<br>BCS<br>T_____|junetontemperature———S«dTSSSSCSC~—~—S<br>=S~=idr«dO|
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22
2
Philips Semiconductors
Product specification
PMST2369
## NPN switching transistor
## THERMAL CHARACTERISTICS
|SYMBOL<br>PARAMETER|CONDITIONS|VALUE<br>UNIT|
|---|---|---|
|Note|||
|1.<br>Transistor mounted on an FR4 printed-circuit board.|||
|CHARACTERISTICS|||
|Tamb = 25 °C unless otherwise specified.|||
|SYMBOL<br>PARAMETER<br>IcBo<br>collectorcut-off current|CONDITIONS<br>le=0;Vop =20V||MIN.<br>| MAX. | UNIT<br>[-<br>[400 [nA|
|hee<br>DCcurrentgain|Ic=10mA; Voce=1V|40<br>ft20 ||
|io=100mA;Vor=2Vinotet<br>[20 |- +t —_—+s<br>collector-emitter saturation voltage| lc = 10mA; Iz = 1 mA<br>I —-|250,<br>|mv<br>base-emitter saturation voltage<br>Ic=10mA; lg=1mA<br>700 =f850s |mv<br>collectorcapacitance<br>le=ie= 0;Veg = 5 V;<br>f= 1 MHz<br>[4spF<br>transition frequency<br>Ic = 10mA;Vce= 10 V; f = 100MHz [500<br>= [-<br>| MHz|||
|Switching times (between 10% and 90% levels); (see Fig.2)|||
|||—Jers_|<br>=<br>f20 [ns__<br>fio [ns<br>fons|
## Note
1. Transistor mounted on an FR4 printed-circuit board.
## CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
## Note
1. Pulse test: tp < 300 us; 6 < 0.02.
1999 Apr 22
3
Philips Semiconductors
Product specification
PMST2369
## NPN switching transistor
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**----- Start of picture text -----**<br>
VBB Voc<br>Rp Re<br><_—_——_ —_—_-<br>oscilloscope“0a vo offre) oscilloscope<br>V; R2 DUT<br>Rt<br>_, A MLB826<br>Vi = 0.5V to 4.2 V; T = 500 us; tp = 10 us; t= tS 1 ns.<br>Rt =56Q; R2= 1 kQ; Rp = 1 kQ; Ro = 270Q.<br>Vep = 0.2 V; Voc =2.7V.<br>Oscilloscope: input impedance Z; = 50 Q.<br>Fig.2 Test circuit for switching times.<br>**----- End of picture text -----**<br>
1999 Apr 22
4
Philips Semiconductors
Product specification
PMST2369
## NPN switching transistor
## PACKAGE OUTLINE
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Plastic surface mounted package; 3 leads SOT323<br>an an E<br>\<br>| \|<br>I \ /<br>— XN mA<br>— lv OA]<br>|| }3<br>—____| ; | ___ |<br>Q<br>| f<br>——— EEE Ay _y<br>SE e e t ;<br>Tl | Ee a:<br>Le [Ei] _ | | {o[w OLE] lp<br>[2] —+|<br>0 1 2mm<br>{OD OD<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>wr | a [mo | |e Lote le | afte |e |» | «|<br>14 0.4 | 0.25 | 22 | 1.35 22 | 045 | 0.23<br>ee PROJECTION |<br>=<br>1999 Apr 22 5<br>**----- End of picture text -----**<br>
Philips Semiconductors
Product specification
PMST2369
## NPN switching transistor
## DEFINITIONS
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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Data|sheet|status|
|Objective|specification|This|data|sheet|contains|target|or|goal|specifications|for|product|development.|
|Preliminary|specification|This|data|sheet|contains|preliminary|data;|supplementary|data|may|be|published|later.|
|Product|specification|This|data|sheet|contains|final|product|specifications.|
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## Limiting values
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|||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Limiting|values|given|are|in|accordance|with|the|Absolute|Maximum|Rating|System|(IEC|134).|Stress|above|one|or|
|more|of|the|limiting|values|may|cause|permanent|damage|to|the|device.|These|are|stress|ratings|only|and|operation|
|of|the|device|at|these|or|at|any|other|conditions|above|those|given|in|the|Characteristics|sections|of|the|specification|
|is|not|implied.|Exposure|to|limiting|values|for|extended|periods|may|affect|device|reliability.|
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## Application information
Where application information is given, itis advisory and does not form part of the specification.
## LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 22
6
Philips Semiconductors
Product specification
NPN switching transistor
PMST2369
NOTES
1999 Apr 22
7
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## © Philips Electronics N.V. 1999
Internet: http:/Awww.semiconductors. philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
## Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 22
Document order number: 9397 750 05755
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SemiconductorsPhilips.<br>**----- End of picture text -----**<br>
Lett pelle. amftJ
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