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PMGD780SN,115
Dual MOSFET, N Channel, 60 V, 300 mA, 0.78 ohm
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- Manufacturer: NEXPERIA
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 410mW
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 300mA
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.78ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.117 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [35 x 36] intentionally omitted <==** ## **PMGD780SN** **Dual N-channel** μ **TrenchMOS standard level FET Rev. 02 — 19 April 2010** **Product data sheet** ## **1. Product profile** ## **1.1 General description** Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. ## **1.2 Features and benefits** - Surface-mounted package - Standard level threshold voltage - Low on-state resistance - Footprint 40 % smaller than SOT23 - Fast switching - Dual device ## **1.3 Applications** - Driver circuits - Switching in portable appliances ## **1.4 Quick reference data** - VDS ≤ 60 V - Ptot ≤ 0.41 W - ID ≤ 0.49 A - RDSon ≤ 920 mΩ ## **2. Pinning information** **Table 1. Pinning - SOT363 (SC-88), simplified outline and symbol** |**Pin**|**Description**|**Simplified**|**Simplified**|**Simplified**|**outline**|**outline**|**outline**|**outline**|**Graphic**|**Graphic**|**symbol**|**symbol**|**symbol**|**symbol**|**symbol**||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |1|source1 (S1)||||||||||||||||| |2|gate1 (G1)|||6||5||4||D1||||D2|||| |3|drain2 (D2)||||||||||||||||| |4|source2 (S2)||||||||||||||||| ||||||||||||||||||| |5|gate2 (G2)|||1||2||3|||||||||| |6|drain1 (D1)|**SOT363 (SC-88)**||||||||S1|||G1|S2||G2|| ||||||||||||||||_msd901_||| **==> picture [172 x 101] intentionally omitted <==** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** ## **3. Ordering information** ## **Table 2. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |PMGD780SN|SC-88<br>plastic surface-mounted package; 6 leads<br>SOT363||| ## **4. Limiting values** ## **Table 3. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |VDS<br>drain-source voltage|25°C≤Tj≤150°C<br>-<br>60<br>V| |VDGR<br>drain-gate voltage|25°C≤Tj≤150°C; RGS= 20 kΩ<br>-<br>60<br>V| |VGS<br>gate-source voltage|-<br>±20<br>V| |ID<br>drain current|Tsp= 25°C; VGS= 10 V;Figure 2<br>and3<br>[1]<br>-<br>0.49<br>A| ||Tsp= 100°C; VGS= 10 V;Figure 2<br>[1]<br>-<br>0.31<br>A| |IDM<br>peak drain current|Tsp= 25°C; pulsed; tp≤10μs;Figure 3<br>[1]<br>-<br>0.99<br>A| |Ptot<br>total power dissipation|Tsp= 25°C;Figure 1<br>-<br>0.41<br>W| |Tstg<br>storage temperature|<br>−55<br>+150<br>°C| |Tj<br>junction temperature|−55<br>+150<br>°C| |**Source-drain diode**|| |IS<br>source current|Tsp= 25°C<br>[1]<br>-<br>0.34<br>A| |ISM<br>peak source current|Tsp= 25°C; pulsed; tp≤10μs<br>[1]<br>-<br>0.69<br>A| [1] Single device conducting. PMGD780SN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **2 of 14** **Rev. 02 — 19 April 2010** **Product data sheet** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** **==> picture [497 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa17 03aa25<br>120 120<br>Pder Ider<br>(%) (%)<br>80 80<br>40 40<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>Tsp ( ° C) Tsp ( ° C)<br>Pder = --------------------- PtotP ( tot25 ° C - ) × 100 % Ider = ----------------- ID ( I25D ° C - ) × 100 %<br>Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a<br>function of solder point temperature function of solder point temperature<br>**----- End of picture text -----**<br> **==> picture [455 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> 03an22<br> 10<br>ID<br>(A) Limit R DSon = V DS / I D t p = 10 μ s<br> 1<br>100 μ s<br>10 [-1]<br>1 ms<br>DC<br>10 ms<br>100 ms<br>10 [-2]<br>10 [-3]<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>Tsp = 25 °C; IDM is single pulse; VGS = 10 V<br>Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage<br>**----- End of picture text -----**<br> PMGD780SN_2 **Product data sheet** All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **3 of 14** **Rev. 02 — 19 April 2010** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** ## **5. Thermal characteristics** ## **Table 4. Thermal characteristics** **==> picture [497 x 326] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Conditions Min Typ Max Unit<br>Rth(j-sp) thermal resistance from junction to solder point Figure 4 - - 300 K/W<br>03an28<br> 10 [3]<br>Zth(j-sp)<br> (K/W)<br>δ = 0.5<br> 10 [2]<br>0.2<br>0.1<br>0.05<br>0.02<br> 10<br>single pulse P δ = tp<br>T<br>t t<br>p<br>T<br> 1<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>tp (s)<br>Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration<br>**----- End of picture text -----**<br> PMGD780SN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **4 of 14** **Rev. 02 — 19 April 2010** **Product data sheet** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** ## **6. Characteristics** ## **Table 5. Characteristics** _Tj = 25_ ° _C unless otherwise specified._ |**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---|---| |**Static characteristics**||| |V(BR)DSS drain-source breakdown voltage|ID= 250μA; VGS= 0 V|| ||Tj= 25°C|60<br>-<br>-<br>V| ||Tj=−55°C|55<br>-<br>-<br>V| |VGS(th)<br>gate-source threshold voltage|ID= 0.25 mA; VDS= VGS;Figure 9|| ||Tj= 25°C|1<br>2<br>2.5<br>V| ||Tj= 150°C|0.6<br>−<br>−<br>V| ||Tj=−55°C|−<br>−<br>3.5<br>V| |IDSS<br>drain leakage current|VDS= 60 V; VGS= 0 V|| ||Tj= 25°C|-<br>0.05<br>1<br>μA| ||Tj= 150°C|-<br>-<br>100<br>μA| |IGSS<br>gate leakage current|VGS=±20 V; VDS= 0 V|-<br>10<br>100<br>nA| |RDSon<br>drain-source on-state resistance|VGS= 10 V; ID= 0.3 A;Figure 7<br>and8|| ||Tj= 25°C|-<br>780<br>920<br>mΩ| ||<br>Tj= 150°C|-<br>1445 1700 mΩ| ||VGS= 4.5 V; ID= 0.075 A; Figure 7<br>and8|-<br>1100 1400 mΩ| |**Dynamic characteristics**||| |QG(tot)<br>total gate charge|ID= 1 A; VDD= 30 V; VGS= 10 V;Figure 13|-<br>1.05<br>-<br>nC| |QGS<br>gate-source charge||-<br>0.2<br>-<br>nC| |QGD<br>gate-drain charge||-<br>0.22<br>-<br>nC| |Ciss<br>input capacitance|VGS= 0 V; VDS= 30 V; f = 1 MHz;Figure 11|-<br>23<br>-<br>pF| |Coss<br>output capacitance||-<br>5<br>-<br>pF| |Crss<br>reverse transfer capacitance||-<br>3.5<br>-<br>pF| |td(on)<br>turn-on delay time|VDD= 30 V; RL= 30Ω; VGS= 10 V; RG= 6Ω|-<br>2<br>-<br>ns| |tr<br>rise time||-<br>4<br>-<br>ns| |td(off)<br>turn-off delay time||-<br>5<br>-<br>ns| |tf<br>fall time||-<br>2.2<br>-<br>ns| |**Source-drain diode**||| |VSD<br>source-drain voltage|IS= 0.3 A; VGS= 0 V;Figure 12|-<br>0.83<br>1.2<br>V| PMGD780SN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **5 of 14** **Rev. 02 — 19 April 2010** **Product data sheet** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** **==> picture [497 x 473] intentionally omitted <==** **----- Start of picture text -----**<br> 03an88 03an90<br>2 1<br>10<br>ID 6 ID<br>(A) (A)<br>0.8<br>1.5<br>5<br>0.6<br>1 4.5<br>0.4<br>4<br>0.5 Tj = 150 ° C 25 ° C<br>3.5 0.2<br>VGS (V) = 3<br>0 0<br>0 1 2 3 0 1 2 3 4 5<br>VDS (V) VGS (V)<br>Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon<br>Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a<br>function of drain-source voltage; typical function of gate-source voltage; typical values<br>values<br>03an89 03aa28<br>3 2.4<br>VGS (V) = 3.5 4<br>a<br>RDSon 4.5<br>( Ω )<br>1.8<br>2<br>1.2<br>5<br>1 6<br>10 0.6<br>0 0<br>0 0.2 0.4 0.6 0.8 1 − 60 0 60 120 180<br>ID (A) Tj (j ( ( ° C)<br>Tj = 25 °C RDSon<br>**----- End of picture text -----**<br> **==> picture [233 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa28<br>2.4<br>a<br>1.8<br>1.2<br>0.6<br>0<br>− 60 0 60 120 180<br>Tj (j ( ( ° C)<br>a = --------------------------- RDSon -<br>R °<br>DSon ( 25 C )<br>**----- End of picture text -----**<br> **Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance of drain current; typical values as a function of junction temperature** PMGD780SN_2 **Product data sheet** All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **6 of 14** **Rev. 02 — 19 April 2010** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** **==> picture [481 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa34 03an32<br>2.4 10 [-3]<br>VGS(th) ID<br>(V) (A)<br>typ 10 [-4]<br>1.8<br>10 [-5]<br>1.2<br>min 10 [-6] min typ<br>0.6<br>1E-7<br>0 1E-8<br>− 60 0 60 120 180 0 0.5 1 1.5 2 2.5<br>Tj ( ° C) VGS (V)<br>ID = 0.25 mA; VDS = VGS Tj = 25 °C; VDS = 5 V<br>**----- End of picture text -----**<br> **Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature gate-source voltage** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03an92<br> 10 [2]<br>C<br>(pF)<br>Ciss<br> 10<br>C oss<br>C rss<br> 1<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> VGS = 0 V; f = 1 MHz **Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values** PMGD780SN_2 **Product data sheet** All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **7 of 14** **Rev. 02 — 19 April 2010** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03an91<br>1<br>IS VGS = 0 V<br>(A)<br>0.8<br>0.6<br>0.4<br>150 ° C Tj = 25 ° C<br>0.2<br>0<br>0 0.3 0.6 0.9 1.2<br>VSD (V)<br>**----- End of picture text -----**<br> Tj = 25 °C and 150 °C; VGS = 0 V **Fig 12. Source current as a function of source-drain voltage; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03an93<br>10<br>VGS ID = 1 A<br>(V) Tj = 25 ° C<br>8 VDS = 30 V<br>6<br>4<br>2<br>0<br>0 0.3 0.6 0.9 1.2<br>QG (nC)<br>**----- End of picture text -----**<br> ID = 1 A; VDD = 30 V **Fig 13. Gate-source voltage as a function of gate charge; typical values** PMGD780SN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **8 of 14** **Rev. 02 — 19 April 2010** **Product data sheet** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** ## **7. Package outline** ## **Plastic surface-mounted package; 6 leads** ## **SOT363** **==> picture [478 x 570] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A X<br>y HE v M A<br>6 5 4<br>Q<br>pin 1<br>index A<br>A1<br>1 2 3 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>A1<br>UNIT A max bp c D E e e1 HE Lp Q v w y<br>1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25<br>mm 0.1 1.3 0.65 0.2 0.2 0.1<br>0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-08<br> SOT363 SC-88<br>06-03-16<br>**----- End of picture text -----**<br> **Fig 14. Package outline SOT363 (SC-88)** PMGD780SN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **9 of 14** **Rev. 02 — 19 April 2010** **Product data sheet** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** ## **8. Soldering** **==> picture [323 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 2.65<br>solder lands<br>2.35 1.5 0.6 0.5 0.4 (2 × )<br>(4 × ) (4 × ) solder resist<br>solder paste<br>0.5 0.6<br>occupied area<br>(4 × ) (2 × )<br>0.6<br>Dimensions in mm<br>(4 × )<br>1.8 sot363_fr<br>**----- End of picture text -----**<br> **Fig 15. Reflow soldering footprint SOT363 (SC-88)** PMGD780SN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **10 of 14** **Rev. 02 — 19 April 2010** **Product data sheet** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** ## **9. Revision history** |**Table 6.**|**Revision**|**history**|| |---|---|---|---| |**Document**|**ID**|**Release date**<br>**Data sheet status**<br>**Change notice**|**Supersedes**| |PMGD780SN_2||20100419<br>Product data sheet<br>-|PMGD780SN_1| |Modifications:||**•** The format of this data sheet has been redesigned to comply|with the new identity| |||guidelines of NXP Semiconductors.|| |||**•** Legal texts have been adapted to the new company name where appropriate.|| |||**•** Table 5“<br>Characteristics<br>”<br>: added VGS(th)maximum value at condition Tj= 25°C|| |||**•** Section 10“<br>Legal information<br>”<br>: updated|| ||||| |PMGD780SN_1||20040211<br>Product data<br>-|-| PMGD780SN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **11 of 14** **Rev. 02 — 19 April 2010** **Product data sheet** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** ## **10. Legal information** ## **10.1 Data sheet status** |**Document status[1]**<br>**[2]**|**Product status[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **10.2 Definitions** malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. **Product specification —** The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. ## **10.3 Disclaimers** **Terms and conditions of commercial sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. **Limited warranty and liability —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Non-automotive qualified products —** Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or PMGD780SN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **12 of 14** **Rev. 02 — 19 April 2010** **Product data sheet** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. ## **10.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. **TrenchMOS —** is a trademark of NXP B.V. ## **11. Contact information** ## For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** PMGD780SN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **13 of 14** **Rev. 02 — 19 April 2010** **Product data sheet** **PMGD780SN** **NXP Semiconductors** **Dual N-channel** μ **TrenchMOS standard level FET** ## **12. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 1**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 4**| |**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**7**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**8**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**9**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11**| |**10**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 12**| |10.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12| |10.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |10.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |10.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13| |**11**|**Contact information. . . . . . . . . . . . . . . . . . . . . 13**| |**12**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2010.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 19 April 2010 Document identifier: PMGD780SN_2**
Updated at June 9, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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