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PMGD290XN,115
Dual MOSFET, N Channel, 20 V, 200 mA, 0.29 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NEXPERIA
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 410mW
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 200mA
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.29ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.131 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia Dual N-channel µTrenchMOS™ extremely low level FET **Rev. 01 — 26 February 2004** ## **PMGD290XN** **==> picture [12 x 3] intentionally omitted <==** **----- Start of picture text -----**<br> MBD128<br>**----- End of picture text -----**<br> **Product data** ## **1.** ## **1.1 Description** TrenchMOS™ technology. ## **1.2 Features** I Surface mounted package I Dual device I Low on-state resistance I Footprint 40% smaller than SOT23 I Fast switching I Low threshold voltage. ## **1.3 Applications** I Driver circuits I Switching in portable appliances. ## **1.4 Quick reference data** I VDS ≤ 20 V I ID ≤ 0.86 A I Ptot ≤ 0.41 W I RDSon ≤ 350 mΩ. ## **2. Pinning information** **Table 1:** **==> picture [497 x 134] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Description Simplified outline Symbol<br>1 source (s1)<br>6 5 4 d1 d2<br>2 gate (g1)<br>3 drain (d2)<br>4 source (s2)<br>5 gate (g2)<br>s1 g1 s2 g2<br>6 drain (d1) 1 2 3 MSD901<br>Top view MSA370<br>SOT363 (SC-88)<br>**----- End of picture text -----**<br> **==> picture [229 x 70] intentionally omitted <==** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** ## **3. Ordering information** ## **Table 2: Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |PMGD290XN|SC-88<br>Plastic surface mounted package; 6 leads<br>SOT363||| ## **4. Limiting values** ## **Table 3: Limiting values** In accordance with the Absolute Maximum Rating System (IEC 60134). |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |VDS<br>drain-source voltage (DC)|25°C≤Tj≤150°C<br>-<br>20<br>V| |VDGR<br>drain-gate voltage (DC)|25°C≤Tj≤150°C; RGS= 20 kΩ<br>-<br>20<br>V| |VGS<br>gate-source voltage (DC)|-<br>±12<br>V| |ID<br>drain current (DC)|Tsp= 25°C; VGS= 4.5 V;Figure 2and3<br>[1] -<br>0.86<br>A| ||Tsp= 100°C; VGS= 4.5 V;Figure 2<br>[1] -<br>0.54<br>A| |IDM<br>peak drain current|Tsp= 25°C; pulsed; tp≤10µs;Figure 3<br>[1] -<br>1.72<br>A| |Ptot<br>total power dissipation|Tsp= 25°C;Figure 1<br>-<br>0.41<br>W| |Tstg<br>storage temperature|−55<br>+150<br>°C| |Tj<br>junction temperature|−55<br>+150<br>°C| |**Source-drain diode**|| |IS<br>source (diode forward) current (DC)|Tsp= 25°C<br>[1] -<br>0.34<br>A| |ISM<br>peak source (diode forward) current|Tsp= 25°C; pulsed; tp≤10µs<br>[1] -<br>0.69<br>A| [1] Single device conducting. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12762 **Product data** **Rev. 01 — 26 February 2004** **2 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** **==> picture [497 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa25<br>120 03aa17 120<br>Pder Ider<br>(%) (%)<br>80 80<br>40 40<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>Tsp (°C) Tsp (°C)<br>Pder = ----------------------- PtotP ( tot25 ° C ) × 100 % I der = ------------------- I D ( I25D ° C ) × 100 %<br>Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a<br>function of solder point temperature. function of solder point temperature.<br>**----- End of picture text -----**<br> **==> picture [448 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 03an14<br> 10<br>ID<br>(A)<br>Limit RDSon = VDS / ID<br>tp = 10 µ s<br> 1<br>100 µ s<br>1 ms<br>DC<br>10 [-1] 10 ms<br>100 ms<br>10 [-2]<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>Tsp = 25 °C; IDM is single pulse; VGS = 4.5 V<br>Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.<br>**----- End of picture text -----**<br> © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12762 **Product data** **Rev. 01 — 26 February 2004** **3 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** ## **5. Thermal characteristics** ## **Table 4: Thermal characteristics** |**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |Rth(j-sp)<br>thermal resistance from junction to solder point Figure 4<br>-<br>-<br>300<br>K/W|| |**5.1**<br>**Transient thermal impedance**|| **==> picture [433 x 222] intentionally omitted <==** **----- Start of picture text -----**<br> 03an28<br> 10 [3]<br>Zth(j-sp)<br> (K/W)<br>δ = 0.5<br> 10 [2]<br>0.2<br>0.1<br>0.05<br>0.02<br> 10<br>t<br>single pulse P δ = p<br>T<br>tp t<br>T<br> 1<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>tp (s)<br>**----- End of picture text -----**<br> **Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.** © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12762 **Product data** **Rev. 01 — 26 February 2004** **4 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** ## **6. Characteristics** ## **Table 5: Characteristics** |**Table 5:**<br>**Characteristics**<br>|| |---|---| |Tj= 25°C unless otherwise specified.|| |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |**Static characteristics**|| |V(BR)DSS drain-source breakdown voltage|ID= 1µA; VGS= 0 V| ||Tj= 25°C<br>20<br>-<br>-<br>V| ||Tj=−55°C<br>18<br>-<br>-<br>V| |VGS(th)<br>gate-source threshold voltage|ID= 0.25 mA; VDS= VGS;Figure 9| ||Tj= 25°C<br>0.5<br>1<br>1.5<br>V| ||Tj= 150°C<br>0.35<br>-<br>-<br>V| ||Tj=−55°C<br>-<br>-<br>1.8<br>V| |IDSS<br>drain-source leakage current|VDS= 20 V; VGS= 0 V| ||Tj= 25°C<br>-<br>-<br>1<br>µA| ||Tj= 150°C<br>-<br>-<br>100<br>µA| |IGSS<br>gate-source leakage current|VGS=±12 V; VDS= 0 V<br>-<br>10<br>100<br>nA| |RDSon<br>drain-source on-state resistance|VGS= 4.5 V; ID= 0.2 A;Figure 7and8| ||Tj= 25°C<br>-<br>290<br>350<br>mΩ| ||Tj= 150°C<br>-<br>464<br>560<br>mΩ| ||VGS= 4.5 V; ID= 0.66 A;Figure 7and8<br>-<br>295<br>350<br>mΩ| ||VGS= 2.5 V; ID= 0.4 A;Figure 7and8<br>-<br>490<br>580<br>mΩ| ||VGS= 2.5 V; ID= 0.1 A;Figure 7and8<br>-<br>460<br>550<br>mΩ| |**Dynamic characteristics**|| |Qg(tot)<br>total gate charge|ID= 1 A; VDD= 10 V; VGS= 4.5 V;<br>Figure 13<br>-<br>0.72<br>-<br>nC<br>-<br>0.18<br>-<br>nC<br>-<br>0.18<br>-<br>nC| |Qgs<br>gate-source charge|| |Qgd<br>gate-drain (Miller) charge|| |Ciss<br>input capacitance|VGS= 0 V; VDS= 20 V; f = 1 MHz;<br>Figure 11<br>-<br>34<br>-<br>pF<br>-<br>12<br>-<br>pF<br>-<br>8<br>-<br>pF| |Coss<br>output capacitance|| |Crss<br>reverse transfer capacitance|| |td(on)<br>turn-on delay time|VDD= 10 V; RL= 6Ω;<br>VGS= 4.5 V; RG= 6Ω<br>-<br>5<br>-<br>ns<br>-<br>11<br>-<br>ns<br>-<br>11<br>-<br>ns<br>-<br>6<br>-<br>ns| |tr<br>rise time|| |td(off)<br>turn-off delay time|| |tf<br>fall time|| |**Source-drain diode**|| |VSD<br>source-drain (diode forward) voltage|IS= 0.3 A; VGS= 0 V;Figure 12<br>-<br>0.8<br>1.2<br>V| © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12762 **Product data** **Rev. 01 — 26 February 2004** **5 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** **==> picture [497 x 538] intentionally omitted <==** **----- Start of picture text -----**<br> 03am96 03am98<br>2.5 2.5<br>4.5 V 3.5 V<br>ID ID VDS > ID x RDSon<br>(A) 3 V (A)<br>2 2<br>25 °C Tj = 150 °C<br>1.5 1.5<br>2.5 V<br>1 1<br>0.5 2 V 0.5<br>VGS = 1.8 V<br>0 0<br>0 0.5 1 1.5 2 0 1 2 3 4 5<br>VDS (V) VGS (V)<br>Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID x RDSon<br>Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a<br>function of drain-source voltage; typical values. function of gate-source voltage; typical values.<br>03am97 03af18<br>1 2<br>3 V<br>RDSon VGS = 2.5 V<br>(Ω) a<br>0.8<br>1.5<br>0.6<br>1<br>3.5 V<br>0.4<br>4.5 V<br>0.5<br>0.2<br>0 0<br>0 0.5 1 1.5 2 ID (A) 2.5 -60 0 60 120 Tj (°C) 180<br>Tj = 25 °C a = --------------------------- RDSon -<br>R °<br>DSon ( 25 C )<br>Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance<br>of drain current; typical values. factor as a function of junction temperature.<br>**----- End of picture text -----**<br> © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12762 **Product data** **Rev. 01 — 26 February 2004** **6 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** **==> picture [438 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 03al82 03an65<br>2 10 [-3]<br>VGS(th)<br>ID<br>(V)<br>max (A)<br>1.5<br>10 [-4]<br>1 typ min typ max<br>10 [-5]<br>min<br>0.5<br>0 10 [-6]<br>-60 0 60 120 Tj (°C) 180 0 0.4 0.8 1.2 VGS (V) 1.6<br>**----- End of picture text -----**<br> ID = 0.25 mA; VDS = VGS **==> picture [76 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Tj = 25 °C; VDS = 5 V<br>**----- End of picture text -----**<br> **Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature. gate-source voltage.** **==> picture [189 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 03an00<br> 10 [2]<br>C<br>(pF) Ciss<br>Coss<br> 10<br>Crss<br> 1<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> VGS = 0 V; f = 1 MHz **Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.** © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12762 **Product data** **Rev. 01 — 26 February 2004** **7 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** **==> picture [425 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 03am99 03an01<br>1 5<br>IS VGS = 0 V VGS ID = 1 A<br>(A)0.8 (V)4 Tj = 25 °C<br>VDD = 10 V<br>0.6 3<br>0.4 2<br>150 °C Tj = 25 °C<br>0.2 1<br>0 0<br>0 0.3 0.6 0.9 1.2 0 0.2 0.4 0.6 0.8<br>VSD (V) QG (nC)<br>**----- End of picture text -----**<br> **==> picture [118 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Tj = 25 °C and 150 °C; VGS = 0 V<br>**----- End of picture text -----**<br> **==> picture [73 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ID = 1 A; VDD = 10 V<br>**----- End of picture text -----**<br> **Fig 12. Source (diode forward) current as a function of Fig 13. Gate-source voltage as a function of gate source-drain (diode forward) voltage; typical charge; typical values. values.** © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12762 **Product data** **Rev. 01 — 26 February 2004** **8 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** ## **7. Package outline** ## **Plastic surface mounted package; 6 leads** ## **SOT363** **==> picture [482 x 575] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A X<br>y HE v M A<br>6 5 4<br>Q<br>pin 1<br>index A<br>A1<br>1 2 3 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>A1<br>UNIT A max bp c D E e e1 HE Lp Q v w y<br>1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25<br>mm 0.1 1.3 0.65 0.2 0.2 0.1<br>0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br> SOT363 SC-88 97-02-28<br>**----- End of picture text -----**<br> ## **Fig 14. SOT363 (SC-88).** © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12762 **Product data** **Rev. 01 — 26 February 2004** **9 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** ## **8. Soldering** **==> picture [373 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 2.65<br>0.60<br>(2×)<br>0.40<br>2.35 0.90 2.10<br>(2×)<br>solder paste 0.50<br>(4×)<br>solder lands<br>solder resist 0.50<br>(4×)<br>1.20<br>occupied area 2.40 MSA432<br>Dimensions in mm.<br>**----- End of picture text -----**<br> **Fig 15.** ## **9. Revision history** |**Table**|**6:**|**Revision history**|**Revision history**|| |---|---|---|---|---| |**Rev**|**Date**||**CPCN**|**Description**| |**01**|**20040226**||**-**|**Product data (9397 750 12762).**| © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12762 **Product data** **Rev. 01 — 26 February 2004** **10 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel µ TrenchMOS™ extremely low level FET** ## **10. Data sheet status** |**Level**|**Data sheet status**[1]|**Product status**[2][3]|**Defnition**| |---|---|---|---| |I|Objective data|Development|This data sheet contains data from the objective specifcation for product development. Philips<br>Semiconductors reserves the right to change the specifcation in any manner without notice.| |II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation. Supplementary data will be published<br>at a later date. Philips Semiconductors reserves the right to change the specifcation without notice, in| ||||order to improve the design and supply the best possible product.| |III|Product data|Production|This data sheet contains data from the product specifcation. Philips Semiconductors reserves the| ||||right to make changes at any time in order to improve the design, manufacturing and supply. Relevant<br>changes will be communicated via a Customer Product/Process Change Notifcation (CPCN).| [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. ## **11.** extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information —** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes —** Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. ## **13. Trademarks** ## **12. Disclaimers** **TrenchMOS —** is a trademark of Koninklijke Philips Electronics N.V. **Life support —** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors ## **Contact information** **Fax: +31 40 27 24825** For additional information, please visit **http://www.semiconductors.philips.com** . For sales office addresses, send e-mail to: **sales.addresses@www.semiconductors.philips.com** . **© Koninklijke Philips Electronics N.V. 2004. All rights reserved.** **9397 750 12762** **Product data** **Rev. 01 — 26 February 2004** **11 of 12** **PMGD290XN** **Philips Semiconductors** **Dual N-channel** µ **TrenchMOS™ extremely low level FET** ## **Contents** |**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 1**| |**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 4**| |5.1|Transient thermal impedance . . . . . . . . . . . . . . 4| |**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**7**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**8**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**9**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10**| |**10**|**Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11**| |**11**|**Defnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**12**|**Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**13**|**Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| ## **© Koninklijke Philips Electronics N.V. 2004.** ## **Printed in The Netherlands** All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **==> picture [229 x 117] intentionally omitted <==** **Date of release: 26 February 2004** **Document order number: 9397 750 12762**
Updated at June 9, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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