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PMGD175XN
Dual MOSFET, N Channel, 30 V, 1 A, 0.17 ohm, SOT-363, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Dual MOSFETs
- No. of Pins: 6Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 390mW
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.17ohm
- Transistor Case Style: SOT-363
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 1A
- Power Dissipation N Channel: 390mW
- Power Dissipation P Channel: 390mW
- Gate Source Threshold Voltage Max: 1V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 1A
- Continuous Drain Current Id P Channel: 1A
- Drain Source On State Resistance N Channel: 0.17ohm
- Drain Source On State Resistance P Channel: 0.17ohm
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.097 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PMGD175XN** ## **30 V, dual N-channel Trench MOSFET** **Rev. 1 — 1 June 2012** ## **Product data sheet** ## **1. Product profile** ## **1.1 General description** Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ## **1.2 Features and benefits** Very fast switching Trench MOSFET technology ## **1.3 Applications** Relay driver High-speed line driver Low-side loadswitch - Switching sircuits ## **1.4 Quick reference data** ## **Table 1. Quick reference data** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**Per transistor**|||||||| |VDS|drain-source voltage|Tj= 25 °C||-|-|30|V| |VGS|gate-source voltage|||-12|-|12|V| |ID|drain current|VGS= 4.5 V; Tamb= 25 °C; t ≤ 5 s|[1]|-|-|1|A| |**Static characteristics (per transistor)**|||||||| |RDSon|drain-source on-state|VGS= 4.5 V; ID= 1 A; Tj= 25 °C||-|170|225|mΩ| ||resistance||||||| [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm[2] . **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** ## **2. Pinning information** ## **Table 2. Pinning information** |**Pin**<br>**Symbol**<br>**Description**<br>**Simplified**|**Pin**<br>**Symbol**<br>**Description**<br>**Simplified**|**outline**<br>**Graphic symbol**| |---|---|---| |1<br>S1<br>source TR1<br>**SOT363 (TSSOP6)**<br>2<br>G1<br>gate TR1<br>3<br>D2<br>drain TR2<br>4<br>S2<br>source TR2<br>5<br>G2<br>gate TR2<br>6<br>D1<br>drain TR1<br>1<br>3<br>2<br>4<br>5<br>6<br>S1<br>D1<br>G1<br>S2<br>_017aaa254_<br>D2<br>G2||| |||| ## **3. Ordering information** ## **Table 3. Ordering information** |**Type number**|**Package**| |---|---| ||**Name**<br>**Description**<br>**Version**| |PMGD175XN|TSSOP6<br>plastic surface-mounted package; 6 leads<br>SOT363| ## **4. Marking** |**Table 4.**<br>**Marking codes**|| |---|---| |**Type number**|**Marking code[1]**| |PMGD175XN|U7%| [1] % = placeholder for manufacturing site code © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 1 — 1 June 2012** **2 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** ## **5. Limiting values** ## **Table 5. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Symbol**|**Symbol**|**Symbol**|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Conditions**||||||||**Min**<br>**Max**|**Min**<br>**Max**|**Min**<br>**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**Per transistor**||**Per transistor**|||||||||||||||||| |VDS|||||drain-source voltage|Tj= 25 °C||||||||||-||30|V| |VGS|||||gate-source voltage|||||||||||-12||12|V| |ID|||||drain current|VGS= 4.5 V; T||= 4.5 V; Tamb= 25 °C; t ≤ 5 s|||= 25 °C; t ≤ 5 s|||[1]||-||1|A| |||||||VGS= 4.5 V; T||= 4.5 V; Tamb= 25 °C|||= 25 °C|||[1]||-||0.9|A| |||||||VGS= 4.5 V; T||= 4.5 V; Tamb= 100 °C|||= 100 °C|||[1]||-||0.6|A| |IDM|||||peak drain current|Tamb= 25 °C; single pulse; t||= 25 °C; single pulse; t||= 25 °C; single pulse; tp≤10 µs||||||-||4|A| |Ptot|||||total power dissipation<br>Tamb= 25 °C|||= 25 °C||||||[2]||-||260|mW| |||||||||||||||[1]||-||310|mW| |||||||Tsp= 25 °C||||||||||-||905|mW| |**Source-drain diode**|||||||||||||||||||| |IS|||||source current|Tamb= 25 °C||= 25 °C||||||[1]||-||0.7|A| |**Per device**||**Per device**|||||||||||||||||| |Ptot|||||total power dissipation<br>Tamb= 25 °C|||= 25 °C||||||[2]||-||390|mW| |Tj|||||junction temperature|||||||||||-55||150|°C| |Tamb|||||ambient temperature|||||||||||-55||150|°C| |Tstg|||||storage temperature|||||||||||-65||150|°C| |[1]|[1]|Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm|||Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm|||||||||Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm||||Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.|| |[2]|[2]|Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.|||Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.||||||||||||||| ||||||||||||||||||||| ||||80<br>120<br>Pder<br>(%)||_017aaa123_<br>~~TELE TTTy~~<br>~~TEIN ITT~~<br>ELEN TTT|||||_017aaa124_<br>80<br>120<br>Ider<br>(%)<br>~~BEREEREERE~~<br>~~TANTEE~~<br>TELL NET|||||||||| |||||−75<br>175<br>125<br>25<br>75<br>−25<br>40<br>0<br>TELLTN TE<br>~~ELLEN TE~~<br>~~FELTT TEN |~~|||||||−75<br>175<br>125<br>25<br>75<br>−25<br>40<br>0<br>TELLING<br>~~Tilt TA~~<br>~~FELT ITTY~~||||||||| |||||||Tj(°C)||||||||||||Tj(°C)|| |**Fig 1.**|||**Fig 1.**|**Normalized total power dissipation as a**|||**Normalized total power dissipation as a**||**Fig 2.**||**Normalized continuous drain current as a**|||||**Normalized continuous drain current as a**||**Normalized continuous drain current as a**|| |||||**function of junction temperature**|||||||**function of junction temperature**||||**function of junction temperature**||||| [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm[2] . [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. PMGD175XN **Product data sheet** **Rev. 1 — 1 June 2012** **3 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa589<br>10<br>ID Limit R DSon = V DS /I D<br>(A)<br>tp = 100 μs<br>1<br>tp = 1 ms<br>10 [-1] DC; Tsp = 25 °C tp = 10 ms<br>DC; T amb = 25 °C;<br>drain mounting pad 6 cm [2] tp = 100 ms<br>10 [-2]<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> IDM = single pulse **Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage** ## **6. Thermal characteristics** ## **Table 6. Thermal characteristics** |**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**Per transistor**|| |Rth(j-a)<br>thermal resistance<br>from junction to<br>ambient<br>in free air|[1]<br>-<br>417<br>480<br>K/W| ||[2]<br>-<br>352<br>405<br>K/W| ||[3]<br>-<br>295<br>340<br>K/W| |Rth(j-sp)<br>thermal resistance<br>from junction to solder<br>point|-<br>120<br>138<br>K/W| |**Per device**|| |Rth(j-a)<br>thermal resistance<br>from junction to<br>ambient<br>in free air|[1]<br>-<br>-<br>320<br>K/W| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm[2] . [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm[2] , t ≤ 5 s. © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 1 — 1 June 2012** **4 of 15** **PMGD175XN** **NXP Semiconductors** ## **30 V, dual N-channel Trench MOSFET** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa578<br>10 [3]<br>duty cycle = 1<br>Z(K/W)th(j-a) 0.75<br>0.5<br>0.33<br>0.25<br>10 [2]<br>0.2<br>0.1<br>0.05<br>0.02<br>0 0.01<br>10<br>10 [-3] 10 [-2] 10 [-1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, standard footprint **Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa579<br>10 [3]<br>duty cycle = 1<br>Zth(j-a)<br>(K/W) 0.75<br>0.5<br>0.33<br>10 [2] 0.25<br>0.2<br>0.1<br>0.05<br>0.02<br>0 0.01<br>10<br>10 [-3] 10 [-2] 10 [-1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, mounting pad for drain 6 cm[2] **Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Rev. 1 — 1 June 2012** **Product data sheet** **5 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** ## **7. Characteristics** |**Table 7.**<br>**Characteristics**||| |---|---|---| |**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |**Static characteristics (per transistor)**||| |V(BR)DSS<br>drain-source<br>breakdown voltage|ID= 250 µA; VGS= 0 V; Tj= 25 °C|30<br>-<br>-<br>V| |VGSth<br>gate-source threshold<br>voltage|ID= 250 µA; VDS= VGS; Tj= 25 °C|0.5<br>1<br>1.5<br>V| |IDSS<br>drain leakage current|VDS= 30 V; VGS= 0 V; Tj= 25 °C|-<br>-<br>1<br>µA| ||VDS= 30 V; VGS= 0 V; Tj= 150 °C|-<br>-<br>10<br>µA| |IGSS<br>gate leakage current|VGS= 12 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>100<br>nA| ||VGS= -12 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>100<br>nA| |RDSon<br>drain-source on-state<br>resistance|VGS= 4.5 V; ID= 1 A; Tj= 25 °C|-<br>170<br>225<br>mΩ| ||VGS= 4.5 V; ID= 1 A; Tj= 150 °C|-<br>275<br>365<br>mΩ| ||VGS= 2.5 V; ID= 0.25 A; Tj= 25 °C|-<br>240<br>340<br>mΩ| |gfs<br>forward<br>transconductance|VDS= 10 V; ID= 1 A; Tj= 25 °C|-<br>2.9<br>-<br>S| |**Dynamic characteristics (per transistor)**||| |QG(tot)<br>total gate charge<br>VDS= 15 V; ID= 1 A; VGS= 4.5 V;<br>Tj= 25 °C<br>QGS<br>gate-source charge<br>QGD<br>gate-drain charge||-<br>0.7<br>1.1<br>nC| |||-<br>0.1<br>-<br>nC| |||-<br>0.15<br>-<br>nC| |Ciss<br>input capacitance<br>VDS= 15 V; f = 1 MHz; VGS= 0 V;<br>Tj= 25 °C<br>Coss<br>output capacitance<br>Crss<br>reverse transfer<br>capacitance||-<br>75<br>-<br>pF| |||-<br>30<br>-<br>pF| |||-<br>21<br>-<br>pF| |td(on)<br>turn-on delay time<br>VDS= 15 V; ID= 1 A; VGS= 4.5 V;<br>RG(ext)= 6 Ω; Tj= 25 °C<br>tr<br>rise time<br>td(off)<br>turn-off delay time<br>tf<br>fall time||-<br>6.5<br>-<br>ns| |||-<br>11.5<br>-<br>ns| |||-<br>14<br>-<br>ns| |||-<br>6<br>-<br>ns| |**Source-drain diode (per transistor)**||| |VSD<br>source-drain voltage<br>IS= 0.7 A; VGS= 0 V; Tj= 25 °C||-<br>0.8<br>1.2<br>V| © NXP B.V. 2012. All rights reserved. PMGD175XN **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 1 June 2012** **6 of 15** **PMGD175XN** **NXP Semiconductors** ## **30 V, dual N-channel Trench MOSFET** **==> picture [497 x 536] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa590 aaa-002133<br>4 10 [-3]<br>4.5 V 3.0 V 2.7 V<br>(A)ID VGS = 2.5 V ID<br>(A)<br>3<br>2.3 V (1) (2) (3)<br>10 [-4]<br>2.2 V<br>2<br>2.0 V<br>10 [-5]<br>1.8 V<br>1<br>1.5 V<br>0 10 [-6]<br>0 1 2 3 4 0 0.5 1.0 1.5 2.0<br>VDS (V) VGS (V)<br>Tj = 25 °C Tj = 25 °C; VDS = 5 V<br>(1) minimum values<br>(2) typical values<br>(3) maximum values<br>Fig 6. Output characteristics: drain current as a Fig 7. Sub-threshold drain current as a function of<br>function of drain-source voltage; typical values gate-source voltage<br>017aaa591 017aaa592<br>750 800<br>1.8 V 2.0 V 2.2 V 2.3 V 2.5 V<br>R(mΩ)DSon RDSon<br>(mΩ)<br>600<br>600<br>450<br>400<br>2.7 V<br>300<br>3.0 V Tj = 150 °C<br>200<br>150 VGS = 4.5 V<br>Tj = 25 °C<br>0 0<br>0 1.0 2.0 3.0 4.0 0 2 4 6 8 10<br>ID (A) VGS (V)<br>Tj = 25 °C ID = 1 A<br>Fig 8. Drain-source on-state resistance as a function Fig 9. Drain-source on-state resistance as a function<br>of drain current; typical values of gate-source voltage; typical values<br>**----- End of picture text -----**<br> © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Rev. 1 — 1 June 2012** **Product data sheet** **7 of 15** **PMGD175XN** **NXP Semiconductors** ## **30 V, dual N-channel Trench MOSFET** **==> picture [472 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa593 017aaa594<br>4 1.8<br>ID PLLA<br>(A) a<br>3<br>So 1.4 e<br>e/a y<br>2<br>HH<br>1.0<br>1<br>PTA SEE<br>CEE YEE Z<br>Tj = 150 °C Tj = 25 °C<br>0 ny An 0.6 ZG<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -60 0 60 120 180<br>VGS (V) Tj (°C)<br>VDS > ID × RDSon<br>Transfer characteristics: drain current as a Fig 11. Normalized drain-source on-state resistance as<br>function of gate-source voltage; typical values a function of junction temperature; typical<br>values<br>017aaa595 017aaa596<br>2.0 10 [2]<br>Ciss<br>VGS(th)<br>(V)<br>C<br>1.5<br>(pF) Coss<br>max<br>Crss<br>1.0 CPSSEECCLTT 10 SeaLEI TAM n TL<br>typ<br>0.5<br>min<br>Pr se OIE CI CC<br>0 EEE PE 1 EET LLL LLL<br>-60 0 60 120 180 10 [-1] 1 10 10 [2]<br>Tj (°C) VDS (V)<br>ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V<br>**----- End of picture text -----**<br> **Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values** **Fig 12. Gate-source threshold voltage as a function of Fig 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values** © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Rev. 1 — 1 June 2012** **Product data sheet** **8 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** **==> picture [445 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa597<br>5<br>VGS VDS<br>(V)<br>4 ID<br>VGS(pl)<br>3<br>VGS(th)<br>2 VGS<br>QGS1 QGS2<br>1 QGS QGD<br>QG(tot)<br>017aaa137<br>0<br>0 0.25 0.50 0.75<br>QG (nC)<br>**----- End of picture text -----**<br> ID = 1 A; VDS = 15 V; Tamb = 25 °C **Fig 14. Gate-source voltage as a function of gate Fig 15. Gate charge waveform definitions charge; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa598<br>2.8<br>IS<br>(A)<br>2.4<br>2.0<br>1.6<br>1.2<br>0.8<br>0.4 Tj = 150 °C Tj = 25 °C<br>0<br>0 0.4 0.8 1.2<br>VSD (V)<br>**----- End of picture text -----**<br> VGS = 0 V **Fig 16. Source current as a function of source-drain voltage; typical values** © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 1 — 1 June 2012** **9 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** ## **8. Test information** **==> picture [497 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> P duty cycle δ = t1<br>t2 t2<br>t1<br>t<br>006aaa812<br>Fig 17. Duty cycle definition<br>9. Package outline<br>2.2 1.1<br>1.8 0.8<br>6 5 4 0.45<br>0.15<br>2.2 1.35<br>2.0 1.15 pin 1<br>index<br>1 2 3<br>0.3 0.25<br>0.65<br>0.2 0.10<br>1.3<br>Dimensions in mm 06-03-16<br>Fig 18. Package outline SOT363 (TSSOP6)<br>**----- End of picture text -----**<br> © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 1 — 1 June 2012** **10 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** ## **10. Soldering** **==> picture [497 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> 2.65<br>solder lands<br>2.35 1.5 0.6 0.5 0.4 (2 × )<br>(4 × ) (4 × ) solder resist<br>solder paste<br>0.5 0.6<br>occupied area<br>(4 × ) (2 × )<br>0.6<br>Dimensions in mm<br>(4 × )<br>1.8 sot363_fr<br>Fig 19. Reflow soldering footprint for SOT363 (TSSOP6)<br>1.5<br>solder lands<br>4.5 0.3 2.5<br>solder resist<br>occupied area<br>1.5<br>Dimensions in mm<br>preferred transport<br>1.3 1.3 direction during soldering<br>2.45<br>5.3 sot363_fw<br>**----- End of picture text -----**<br> _sot363_fw_ **Fig 20. Wave soldering footprint for SOT363 (TSSOP6)** © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 1 — 1 June 2012** **11 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** ## **11. Revision history** |**Table 8.**|**Revision**|**history**|||| |---|---|---|---|---|---| |**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |PMGD175XN v.1||20120601|Product data sheet|-|-| © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 1 — 1 June 2012** **12 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** ## **12. Legal information** ## **12.1 Data sheet status** |**Document statu**~~**s**~~**[1]**<br> **[2]**|**Product status[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. ## **12.2 Definitions** **Right to make changes** — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Preview** — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Suitability for use** — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Applications** — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. ## **12.3 Disclaimers** **Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. **Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 1 — 1 June 2012** **13 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** **Terms and conditions of commercial sale** — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. **No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. **Non-automotive qualified products** — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. **Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. ## **12.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. **Adelante** , **Bitport** , **Bitsound** , **CoolFlux** , **CoReUse** , **DESFire** , **EZ-HV** , **FabKey** , **G reenChip** , **HiPerSmart** , **HITAG** , **I²C-bus** logo, **ICODE** , **I-CODE** , **ITEC** , **Labelution** , **MIFARE** , **MIFARE Plus** , **MIFARE Ultralight** , **MoReUse** , **QLPAK** , **Silicon Tuner** , **SiliconMAX** , **SmartXA** , **STARplug** , **TOPFET** , **TrenchMOS** , **TriMedia** and **UCODE** — are trademarks of NXP B.V. **HD Radio** and **HD Radio** logo — are trademarks of iBiquity Digital Corporation. ## **13. Contact information** For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com © NXP B.V. 2012. All rights reserved. PMGD175XN All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 1 — 1 June 2012** **14 of 15** **PMGD175XN** **NXP Semiconductors** **30 V, dual N-channel Trench MOSFET** ## **14. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . .1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . .1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . .1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . .2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . .2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . .4**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6**| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . .10**| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10**| |**10**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11**| |**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12**| |**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .13**| |12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13| |12.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13| |12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13| |12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14| |**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . .14**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2012.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 1 June 2012 Document identifier: PMGD175XN**
Updated at February 9, 2023
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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