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PMF3800SN
Power MOSFET, N Channel, 60 V, 260 mA, 2.8 ohm, SOT-323, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- Channel Type: N Channel
- Power Dissipation: 560mW
- Drain Source On State Resistance: 2.8ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.021 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PMF3800SN** ## **N-channel TrenchMOS standard level FET** **Rev. 03 — 11 November 2009** **Product data sheet** ## **1. Product profile** ## **1.1 General description** Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ## **1.2 Features and benefits** - Electrostatically robust due to integrated protection diodes - Saves PCB space due to small footprint - Suitable for high frequency applications due to fast switching characteristics - Suitable for logic level gate drive sources ## **1.3 Applications** - High-speed line drivers - Relay drivers ## **1.4 Quick reference data** ## **Table 1. Quick reference** |**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---|---| |VDS<br>drain-source voltage|Tj≥25 °C; Tj≤150 °C|-<br>-<br>60<br>V| |ID<br>drain current|Tsp= 25 °C; VGS= 10 V; see<br>Figure 1<br> and 3|-<br>-<br>260<br>mA| |Ptot<br>total power<br>dissipation|Tsp= 25 °C; seeFigure 2|-<br>-<br>0.56<br>W| |**Dynamic characteristics**||| |QGD<br>gate-drain charge|VGS= 10 V; ID= 0.5 A;<br>VDS= 48 V; Tj= 25 °C; see<br>Figure 11|-<br>0.07<br>-<br>nC| |QG(tot)<br>total gate charge||-<br>0.85<br>-<br>nC| |**Static characteristics**||| |RDSon<br>drain-source<br>on-state resistance|VGS= 4.5 V; ID= 200 mA;<br>Tj= 25 °C; see Figure 9<br> and<br>10|-<br>3.8<br>5.3<br>Ω| ||VGS= 10 V; ID= 500 mA;<br>Tj= 25 °C; see Figure 9<br> and<br>10|-<br>2.8<br>4.5<br>Ω| **==> picture [81 x 42] intentionally omitted <==** **PMF3800SN** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **2. Pinning information** ## **Table 2. Pinning information** |**Pin**<br>**Symbol**<br>**Description**<br>**Simplified outline**<br>**Graphic symbol**|**Pin**<br>**Symbol**<br>**Description**<br>**Simplified outline**<br>**Graphic symbol**| |---|---| |1<br>G<br>gate<br>**SOT323 (SC-70)**<br>2<br>S<br>source<br>3<br>D<br>drain<br>1<br>2<br>3<br>G|D<br>S<br>_03ab60_| ## **3. Ordering information** ## **Table 3. Ordering information** |**Type number**|**Package**| |---|---| ||**Name**<br>**Description**<br>**Version**| |PMF3800SN|SC-70<br>plastic surface-mounted package; 3 leads<br>SOT323| ## **4. Marking** ## **Table 4. Marking codes** |**Type number**|**Marking cod**~~**e**~~**[1]**| |---|---| |PMF3800SN|FK*| - [1] * = -: made in Hong Kong - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China ## **5. Limiting values** ## **Table 5. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |VDS<br>drain-source voltage|Tj≥25 °C; Tj≤150 °C<br>-<br>60<br>V| |VDGR<br>drain-gate voltage|Tj≥25 °C; Tj≤150 °C; RGS= 20 kΩ<br>-<br>60<br>V| |VGS<br>gate-source voltage|-15<br>15<br>V| |ID<br>drain current|Tsp= 100 °C; VGS= 10 V; see Figure 1<br>-<br>165<br>mA| ||Tsp= 25 °C; VGS= 10 V; see Figure 1<br> and3<br>-<br>260<br>mA| |IDM<br>peak drain current|Tsp= 25 °C; tp≤10 µs; pulsed; see Figure 3<br>-<br>560<br>mA| |Ptot<br>total power dissipation|Tsp= 25 °C; see Figure 2<br>-<br>0.56<br>W| |Tstg<br>storage temperature|-55<br>150<br>°C| |Tj<br>junction temperature|-55<br>150<br>°C| © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **2 of 12** **PMF3800SN** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** **Table 5. Limiting values** _…continued_ _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**| |---|---|---|---|---|---| |**Source-drain diode**|||||| |IS|source current|Tsp= 25 °C|-|280|mA| |ISM|peak source current|Tsp= 25 °C; tp≤10 µs; pulsed|-|560|mA| |**Electrostatic discharche voltage**|||||| |VESD|electrostatic discharge|HBM; C = 100 pF; R = 1.5 kΩ|-|1|kV| ||voltage||||| **==> picture [498 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa25 03aa17<br>120 120<br>Ider Pder<br>(%) (%)<br>80 80<br>40 40<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>Tsp ( ° C) Tsp ( ° C)<br>Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a<br>function of solder point temperature function of solder point temperature<br>**----- End of picture text -----**<br> **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03ap26<br>1<br>Limit RDSon = VDS / ID tp = 10 μ s<br>ID<br>(A) 100 μ s<br>10 [−] [1]<br>1 ms<br>10 ms<br>DC<br>100 ms<br>10 [−] [2]<br>10 [−] [3]<br>1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> **Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage** © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **3 of 12** **PMF3800SN** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **6. Thermal characteristics** ## **Table 6. Thermal characteristics** **==> picture [498 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Conditions Min Typ Max Unit<br>Rth(j-sp) thermal resistance from see Figure 4 - - 220 K/W<br>junction to solder point<br>03ap25<br>10 [3]<br>Zth(j − sp)<br>(K/W)<br>δ = 0.5<br>10 [2]<br>0.2<br>0.1<br>0.05<br>10 0.02 single pulse P δ = Ttp<br>tp t<br>T<br>1<br>10 [−] [4] 10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10<br>tp (s)<br>Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **4 of 12** **PMF3800SN** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **7. Characteristics** |**Table 7.**<br>**Characteristics**||| |---|---|---| |**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |**Static characteristics**||| |V(BR)DSS<br>drain-source<br>breakdown voltage|ID= 10 µA; VGS= 0 V; Tj= -55 °C|55<br>-<br>-<br>V| ||ID= 10 µA; VGS= 0 V; Tj= 25 °C|60<br>-<br>-<br>V| |VGS(th)<br>gate-source threshold<br>voltage|ID= 1 mA; VDS= VGS; Tj= 150 °C; see<br>Figure 7<br> and 8|0.6<br>-<br>-<br>V| ||ID= 1 mA; VDS= VGS; Tj= -55 °C; see<br>Figure 7<br> and 8|-<br>-<br>3.5<br>V| ||ID= 1 mA; VDS= VGS; Tj= 25 °C; see<br>Figure 7<br> and 8|1<br>2<br>3.3<br>V| |IDSS<br>drain leakage current|VDS= 48 V; VGS= 0 V; Tj= 25 °C|-<br>-<br>1<br>µA| ||VDS= 48 V; VGS= 0 V; Tj= 150 °C|-<br>-<br>10<br>µA| |IGSS<br>gate leakage current|VGS= -10 V; VDS= 0 V; Tj= 25 °C|-<br>50<br>500<br>nA| ||VGS= 10 V; VDS= 0 V; Tj= 25 °C|-<br>50<br>500<br>nA| |RDSon<br>drain-source on-state<br>resistance|VGS= 10 V; ID= 500 mA; Tj= 150 °C; see<br>Figure 9<br> and 10|-<br>5.2<br>8.4<br>Ω| ||VGS= 4.5 V; ID= 200 mA; Tj= 25 °C; see<br>Figure 9<br> and 10|-<br>3.8<br>5.3<br>Ω| ||VGS= 10 V; ID= 500 mA; Tj= 25 °C; see<br>Figure 9<br> and 10|-<br>2.8<br>4.5<br>Ω| |V(BR)GSS<br>gate-source breakdown<br>voltage|VDS= 0 V; Tj= 25 °C; IG= -1 mA|16<br>22<br>-<br>V| ||Tj= 25 °C; IG= 1 mA; VDS= 0 V|16<br>22<br>-<br>V| |**Dynamic characteristics**||| |QG(tot)<br>total gate charge|ID= 0.5 A; VDS= 48 V; VGS= 10 V;<br>Tj= 25 °C; seeFigure 11|-<br>0.85<br>-<br>nC| |QGS<br>gate-source charge||-<br>0.55<br>-<br>nC| |QGD<br>gate-drain charge||-<br>0.07<br>-<br>nC| |Ciss<br>input capacitance|VDS= 10 V; VGS= 0 V; f = 1 MHz;<br>Tj= 25 °C; seeFigure 12|-<br>13<br>40<br>pF| |Coss<br>output capacitance||-<br>8<br>30<br>pF| |Crss<br>reverse transfer<br>capacitance||-<br>4<br>10<br>pF| |td(on)<br>turn-on delay time|VDS= 50 V; RL= 250 Ω; VGS= 10 V;<br>RG(ext)= 50 Ω|-<br>-<br>-<br>ns| |tr<br>rise time||-<br>-<br>-<br>ns| |td(off)<br>turn-off delay time||-<br>-<br>-<br>ns| |tf<br>fall time||-<br>-<br>-<br>ns| |toff<br>turn-off time|VDS= 50 V; VGS= 10 V; RG(ext)= 50 Ω;<br>RGS= 50 Ω; Tj= 25 °C; RL= 250 Ω|-<br>9<br>-<br>ns| |ton<br>turn-on time||-<br>3<br>-<br>ns| |**Source-drain diode**||| |VSD<br>source-drain voltage|IS= 300 mA; VGS= 0 V; Tj= 25 °C; see<br>Figure 13|-<br>0.93<br>1.5<br>V| |trr<br>reverse recovery time|IS= 300 mA; dIS/dt = -100 A/µs;<br>VGS= 0 V; VDS= 25 V; Tj= 25 °C|-<br>30<br>-<br>ns| |Qr<br>recovered charge||-<br>30<br>-<br>nC| © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **5 of 12** **PMF3800SN** **NXP Semiconductors** ## **N-channel TrenchMOS standard level FET** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03an70<br>0.5<br>ID Tj = 25 ° C VGS (V) = 10 6.0<br>(A)<br>0.4<br>4.5<br>0.3 4.0<br>0.2 3.5<br>0.1 3.0<br>0<br>0 0.5 1.0 1.5 2.0<br>VDS (V)<br>**----- End of picture text -----**<br> **Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa34<br>4<br>VGS(th)<br>(V)<br>max<br>3<br>2 typ<br>1 min<br>0<br>-60 0 60 120 180<br>Tj ( ° C)<br>**----- End of picture text -----**<br> **Fig 7. Gate-source threshold voltage as a function of junction temperature** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03an72<br>0.5<br>ID VDS > ID × RDSon<br>(A)<br>0.4<br>0.3<br>0.2<br>0.1<br>150 ° C Tj = 25 ° C<br>0<br>0 2 4 6<br>VGS (V)<br>**----- End of picture text -----**<br> **Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa37<br>10 [−] [1]<br>ID<br>(A)<br>10 [−] [2]<br>10 [−] [3]<br>min typ<br>10 [−] [4]<br>10 [−] [5]<br>10 [−] [6]<br>0 0.6 1.2 1.8 2.4<br>VGS (V)<br>**----- End of picture text -----**<br> **Fig 8. Sub-threshold drain current as a function of gate-source voltage** © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **6 of 12** **PMF3800SN** **NXP Semiconductors** ## **N-channel TrenchMOS standard level FET** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03an71<br>10<br>RDSon VGS (V) = 3.5 Tj = 25 ° C<br>( Ω )<br>8<br>4.0<br>6<br>4.5<br>4 6.0<br>10<br>2<br>0<br>0 0.1 0.2 0.3 0.4 0.5<br>ID (A)<br>**----- End of picture text -----**<br> **Fig 9. Drain-source on-state resistance as a function of drain current; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03ab09<br>15<br>VGS<br>(V)<br>10<br>5<br>0<br>0 0.3 0.6 0.9 1.2<br>QG (nC)<br>**----- End of picture text -----**<br> **Fig 11. Gate-source voltage as a function of gate charge; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa28<br>2.4<br>a<br>1.8<br>1.2<br>0.6<br>0<br>− 60 0 60 120 180<br>Tj ( ° C)<br>**----- End of picture text -----**<br> **Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa46<br>10 [2]<br>C<br>(pF)<br>Ciss<br>10<br>Coss<br>Crss<br>1<br>10 [−] [1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> **Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values** © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **7 of 12** **PMF3800SN** **NXP Semiconductors** ## **N-channel TrenchMOS standard level FET** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 03an73<br>0.5<br>IS VGS = 0 V<br>(A)<br>0.4<br>0.3<br>0.2<br>150 ° C Tj = 25 ° C<br>0.1<br>0<br>0 0.3 0.6 0.9 1.2<br>VSD (V)<br>**----- End of picture text -----**<br> **Fig 13. Source current as a function of source-drain voltage; typical values** © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **8 of 12** **PMF3800SN** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **8. Package outline** ## **Plastic surface-mounted package; 3 leads** **==> picture [35 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SOT323<br>**----- End of picture text -----**<br> **==> picture [478 x 570] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A<br>X<br>y HE v M A<br>3<br>Q<br>A<br>A1<br>c<br>1 2<br>e1 bp w M B Lp<br>e detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A maxA1 bp c D E e e1 HE Lp Q v w<br>1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23<br>mm 0.1 1.3 0.65 0.2 0.2<br>0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-04<br> SOT323 SC-70<br>06-03-16<br>**----- End of picture text -----**<br> **Fig 14. Package outline SOT323 (SC-70)** © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **9 of 12** **PMF3800SN** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **9. Revision history** ## **Table 8. Revision history** |**Document ID**|**Release date**<br>**Data sheet status**|**Change notice**|**Supersedes**| |---|---|---|---| |PMF3800SN_3|20091111<br>Product data sheet|-|PMF3800SN_2| |Modifications:|**•** The format of this data sheet has been|redesigned to comply with the new identity|| ||guidelines of NXP Semiconductors.||| ||**•** Legal texts have been adapted to the new company name where appropriate.||| ||**•** Maximum value added for VGS(th)@ Tj|= 25 °C in Characteristics table.|| |PMF3800SN_2 (9397 750|20050701<br>Product data sheet|-|PMF3800SN_1| |15218)|||| |PMF3800SN_1 (9397 750|20050208<br>Product data sheet|-|-| |14255)|||| © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **10 of 12** **PMF3800SN** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **10. Legal information** ## **10.1 Data sheet status** |**Document status** **[1]**<br>**[2]**|**Product status[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **10.2 Definitions** **Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **10.3 Disclaimers** **General** — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes** — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use** — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications** — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale** — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. ## **10.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. **TrenchMOS** — is a trademark of NXP B.V. ## **11. Contact information** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com © NXP B.V. 2009. All rights reserved. PMF3800SN_3 **Product data sheet** **Rev. 03 — 11 November 2009** **11 of 12** **PMF3800SN** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **12. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . .1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . .1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . .1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . .2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . .2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . .4**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5**| |**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9**| |**9**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10**| |**10**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .11**| |10.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11| |10.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |10.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |10.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |**11**|**Contact information. . . . . . . . . . . . . . . . . . . . . .11**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **==> picture [84 x 52] intentionally omitted <==** **© NXP B.V. 2009.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 11 November 2009 Document identifier: PMF3800SN_3**
Updated at February 9, 2023
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →