Image not available
Illustrative purposes only
PMEG3005AEA,115
Small Signal Schottky Diode, Single, 30 V, 500 mA, 430 mV, 10 A, 150 °C
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NEXPERIA
- Product type:
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):500mA; Forward Voltage VF Max:430mV; Forward Surge Current Ifsm Max:10A; Operating Temperature Max:150
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: PMEG Series
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-323
- Diode Configuration: Single
- Forward Voltage Max: 430mV
- Forward Surge Current: 10A
- Reverse Recovery Time: -
- Average Forward Current: 500mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.1 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DISCRETE SEMICONDUCTORS** **==> picture [277 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> DATA SHEET<br>dbook, halfpage<br>M3D049<br>**----- End of picture text -----**<br> ## **PMEG2005AEA; PMEG3005AEA; PMEG4005AEA** Very low VF MEGA Schottky barrier rectifiers 2003 Aug 20 **Philips Semiconductors** ## **Very low VF MEGA Schottky barrier rectifiers** ## **PMEG2005AEA; PMEG3005AEA; PMEG4005AEA** ## **FEATURES** - Very low forward voltage - High surge current - Very small plastic SMD package. ## **APPLICATIONS** - Low voltage rectification ## **QUICK REFERENCE DATA** |**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**| |---|---|---|---| |IF|forward current|0.5|A| |VR|reverse voltage<br>PMEG2005AEA<br>PMEG3005AEA<br>PMEG4005AEA|20<br>30<br>40|V<br>V<br>V| - High efficiency DC/DC conversion - Voltage clamping - Inverse polarity protection - Low power consumption applications. ## **DESCRIPTION** Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. ## **PINNING** **==> picture [245 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> PIN DESCRIPTION<br>1 cathode<br>2 anode<br>olumns 1 k 2 a<br>MAM283<br>The marking bar indicates the cathode.<br>Fig.1 Simplified outline (SOD323; SC-76) and<br>symbol.<br>**----- End of picture text -----**<br> ## **MARKING** |**MARKING**|| |---|---| |**TYPE NUMBER**|**MARKING CODE**| |PMEG2005AEA|E5| |PMEG3005AEA|E4| |PMEG4005AEA|E3| ## **RELATED PRODUCTS** |**RELATED PRODUCTS**||| |---|---|---| |**TYPE NUMBER**|**DESCRIPTION**|**FEATURE**| |PMEGxx05AEV|0.5 A; 20/30/40 V very low VFMEGA Schottky rectifer|SOT666 package| |PMEG2005EB|0.5 A; 20 V very low VFMEGA Schottky rectifer|smaller SOD523 (SC-79) package| |PMEG2010EA|1 A; 20 V very low VFMEGA Schottky rectifer|higher forward current| 2003 Aug 20 2 Philips Semiconductors ## Very low VF MEGA Schottky barrier rectifiers ## PMEG2005AEA; PMEG3005AEA; PMEG4005AEA ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VR|continuous reverse voltage<br>PMEG2005AEA<br>PMEG3005AEA<br>PMEG4005AEA||−<br>−<br>−|20<br>30<br>40|V<br>V<br>V| |IF|continuous forward current|note 1|−|0.5|A| |IFRM|repetitive peak forward current|tp≤1 ms;δ ≤0.5|−|3.5|A| |IFSM|non-repetitive peak forward current|tp= 8 ms; square wave|−|10|A| |Tj|junction temperature|note 2|−|150|°C| |Tamb|operating ambient temperature|note 2|−65|+150|°C| |Tstg|storage temperature||−65|+150|°C| ## **Notes** 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth j-a|thermal resistance from junction to<br>ambient|in free air; notes 1 and 2|450|K/W| |||in free air; notes 2 and 3|210|K/W| |Rth j-s|thermal resistance from junction to<br>soldering point|note 4|90|K/W| ## **Notes** 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm. 4. Solder point of cathode tab. 2003 Aug 20 3 Philips Semiconductors ## Very low VF MEGA Schottky barrier rectifiers ## PMEG2005AEA; PMEG3005AEA; PMEG4005AEA ## **ELECTRICAL CHARACTERISTICS** Tamb = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**PMEG2005AEA**|**PMEG2005AEA**|**PMEG3005AEA**|**PMEG3005AEA**|**PMEG4005AEA**|**PMEG4005AEA**|**UNIT**| |---|---|---|---|---|---|---|---|---|---| ||||**TYP.**|**MAX.**|**TYP.**|**MAX.**|**TYP.**|**MAX.**|| |VF|forward voltage|IF= 0.1 mA|90|130|90|130|95|130|mV| |||IF= 1 mA|150|190|150|200|155|210|mV| |||IF= 10 mA|210|240|215|250|220|270|mV| |||IF= 100 mA|280|330|285|340|295|350|mV| |||IF= 500 mA|355|390|380|430|420|470|mV| |IR|continuous reverse<br>current|VR= 10 V; note 1|15|40|12|30|7|20|µA| |||VR= 20 V; note 1|40|200|−|−|−|−|µA| |||VR= 30 V; note 1|−|−|40|150|−|−|µA| |||VR= 40 V; note 1|−|−|−|−|30|100|µA| |Cd|diode capacitance|VR= 1 V; f = 1 MHz|66|80|55|70|43|50|pF| ## **Note** 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Aug 20 4 Philips Semiconductors ## Very low VF MEGA Schottky barrier rectifiers ## PMEG2005AEA; PMEG3005AEA; PMEG4005AEA ## **GRAPHICAL DATA** **==> picture [241 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> MDB675<br>10 [3]<br>handbook, halfpage<br>IF<br>(mA)<br>10 [2]<br>(1) (2) (3)<br>10<br>1<br>10 [−][1]<br>0 0.2 0.4 0.6<br>VF (V)<br>**----- End of picture text -----**<br> **==> picture [52 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> PMEG2005AEA<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. - (2) Tamb = 85 °C. - (3) Tamb = 25 °C. Fig.2 Forward current as a function of forward voltage; typical values. **==> picture [241 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> MDB676<br>10 [5]<br>handbook, halfpage<br>IR<br>(µA) (1)<br>10 [4]<br>10 [3]<br>(2)<br>10 [2]<br>(3)<br>10<br>1<br>0 5 10 15 20<br>VR (V)<br>**----- End of picture text -----**<br> **==> picture [53 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> PMEG2005AEA<br>**----- End of picture text -----**<br> **==> picture [62 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> (1) Tamb = 150 °C.<br>**----- End of picture text -----**<br> - (2) Tamb = 85 °C. - (3) Tamb = 25 °C. Fig.3 Reverse current as a function of reverse voltage; typical values. **==> picture [242 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> MDB677<br>150<br>handbook, halfpage<br>Cd<br>(pF)<br>100<br>50<br>0<br>0 5 10 15 20<br>VR (V)<br>PMEG2005AEA<br>f = 1 MHz; Tamb = 25 °C.<br>**----- End of picture text -----**<br> Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 5 Philips Semiconductors ## Very low VF MEGA Schottky barrier rectifiers **==> picture [241 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> MDB672<br>10 [3]<br>handbook, halfpage<br>IF<br>(mA)<br>10 [2]<br>(1) (2) (3)<br>10<br>1<br>10 [−][1]<br>0 0.2 0.4 0.6<br>VF (V)<br>**----- End of picture text -----**<br> ## **PMEG3005AEA** - (1) Tamb = 150 °C. - (2) Tamb = 85 °C. - (3) Tamb = 25 °C. Fig.5 Forward current as a function of forward voltage; typical values. ## PMEG2005AEA; PMEG3005AEA; PMEG4005AEA **==> picture [241 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> MDB673<br>10 [5]<br>handbook, halfpage<br>IR<br>(µA) (1)<br>10 [4]<br>10 [3] (2)<br>10 [2]<br>(3)<br>10<br>1<br>0 10 20 30<br>VR (V)<br>**----- End of picture text -----**<br> ## **PMEG3005AEA** - (1) Tamb = 150 °C. - (2) Tamb = 85 ° - (3) Tamb = 25 °C. Fig.6 Reverse current as a function of reverse voltage; typical values. **==> picture [242 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> MDB674<br>120<br>handbook, halfpage<br>Cd<br>(pF)<br>80<br>40<br>0<br>0 5 10 15 20<br>VR (V)<br>PMEG3005AEA<br>f = 1 MHz; Tamb = 25 °C.<br>**----- End of picture text -----**<br> Fig.7 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 6 Philips Semiconductors ## Very low VF MEGA Schottky barrier rectifiers **==> picture [241 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> MDB669<br>10 [3]<br>handbook, halfpage<br>IF<br>(mA)<br>10 [2]<br>(1) (2) (3)<br>10<br>1<br>10 [−][1]<br>0 0.2 0.4 0.6<br>VF (V)<br>**----- End of picture text -----**<br> **==> picture [52 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> PMEG4005AEA<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. - (2) Tamb = 85 °C. - (3) Tamb = 25 °C. **==> picture [200 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.8 Forward current as a function of forward<br>voltage; typical values.<br>**----- End of picture text -----**<br> ## PMEG2005AEA; PMEG3005AEA; PMEG4005AEA **==> picture [241 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> MDB670<br>10 [5]<br>handbook, halfpage<br>IR<br>(µA)<br>(1)<br>10 [4]<br>10 [3]<br>(2)<br>10 [2]<br>10 (3)<br>1<br>0 10 20 30 40<br>VR (V)<br>**----- End of picture text -----**<br> ## **PMEG4005AEA** **==> picture [62 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> (1) Tamb = 150 °C.<br>**----- End of picture text -----**<br> - (2) Tamb = 85 °C. - (3) Tamb = 25 °C. **==> picture [201 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.9 Reverse current as a function of reverse<br>voltage; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> MDB671<br>100<br>handbook, halfpage<br>Cd<br>(pF)<br>80<br>60<br>40<br>20<br>0<br>0 5 10 15 20<br>VR (V)<br>PMEG4005AEA<br>f = 1 MHz; Tamb = 25 °C.<br>**----- End of picture text -----**<br> Fig.10 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 7 Philips Semiconductors ## Very low VF MEGA Schottky barrier rectifiers ## PMEG2005AEA; PMEG3005AEA; PMEG4005AEA ## **PACKAGE OUTLINE** ## **Plastic surface mounted package; 2 leads** ## **SOD323** **==> picture [495 x 590] intentionally omitted <==** **----- Start of picture text -----**<br> Q<br>A<br>A1<br>c<br>Lp<br>HE v M A<br>D A<br>1 2<br>E bp<br>(1)<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E HE Lp Q v<br>1.1 + 0.05 0.40 0.25 1.8 1.35 2.7 0.45 0.25<br>mm 0.2<br>0.8 − 0.05 0.25 0.10 1.6 1.15 2.3 0.15 0.15<br>Note<br>1. The marking bar indicates the cathode.<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br>98-09-14<br> SOD323 SC-76<br>99-09-13<br>**----- End of picture text -----**<br> 2003 Aug 20 8 Philips Semiconductors ## Very low VF MEGA Schottky barrier rectifiers ## PMEG2005AEA; PMEG3005AEA; PMEG4005AEA ## **DATA SHEET STATUS** |**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**| |---|---|---|---| |I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.| |II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.| |III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).| ## **Notes** 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. ## **DEFINITIONS** **Short-form specification** The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. **Limiting values definition** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ## **DISCLAIMERS** **Life support applications** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes** Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Aug 20 9 ## **Philips Semiconductors – a worldwide company** ## **Contact information** For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **==> picture [214 x 95] intentionally omitted <==** Printed in The Netherlands 613514/01/pp10 Date of release: 2003 Aug 20 Document order number: 9397 750 11615
Updated at June 10, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →