PMEG2010AEB,115
Schottky Rectifier, 20 V, 1 A, Single, SOD-523, 2 Pins, 620 mV
- Manufacturer: NEXPERIA
- Product type: Schottky Rectifier Diodes
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:20V; Forward Current If(AV):1A; Forward Voltage VF Max:620mV; Forward Surge Current Ifsm Max:6A; Operating Temperature Max:150°C;
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: PMEG Series
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-523
- Diode Configuration: Single
- Forward Voltage Max: 620mV
- Forward Surge Current: 6A
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 20V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.13 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **DISCRETE SEMICONDUCTORS** ## **DATA SHEET** **==> picture [149 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> M3D319<br>**----- End of picture text -----**<br> **PMEG2010AEB** 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package 2003 Dec 03 **Philips Semiconductors** ## **20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package** ## **PMEG2010AEB** ## **FEATURES** - Forward current: 1.0 A - Reverse voltage: 20 V - Ultra low forward voltage - Ultra small SMD package. ## **QUICK REFERENCE DATA** |**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**| |---|---|---|---| |IF|forward current|1|A| |VR|reverse voltage|20|V| ## **PINNING** ## **APPLICATIONS** - Low voltage rectification - High efficiency DC/DC conversion - Voltage clamping |**PINNING**|| |---|---| |**PIN**|**DESCRIPTION**| |1|cathode| |2|anode| - Inverse-polarity protection - Low power consumption applications. ## **DESCRIPTION** Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. **==> picture [87 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2<br>Top view col001<br>**----- End of picture text -----**<br> **==> picture [124 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> Marking code: L6.<br>The marking bar indicates the cathode.<br>**----- End of picture text -----**<br> Fig.1 Simplified outline (SOD523; SC-79) and symbol. ## **ORDERING INFORMATION** |**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**| |---|---|---|---| ||**NAME**|**DESCRIPTION**|**VERSION**| |PMEG2010AEB|−|plastic surface mounted package; 2 leads|SOD523| ## **RELATED PRODUCTS** |**TYPE**|**DESCRIPTION**|**FEATURE**| |---|---|---| |PMEG2005EB|0.5 A; 20 V very low VFMEGA Schottky rectifer|Lower IRin same package| |PMEG2010EA|1 A; 20 V very low VFMEGA Schottky rectifer|Lower forward current, lower IRSOD323<br>(SC76)| 2003 Dec 03 2 Philips Semiconductors ## 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package ## PMEG2010AEB ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VR|continuous reverse voltage||−|20|V| |IF|continuous forward current|Ts≤55°C|−|1.0|A| |IFRM|repetitive peak forward current|tp≤1 ms;δ ≤0.5|−|3.5|A| |IFSM|non-repetitive peak forward current|t = 8 ms square wave|−|6|A| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature|note 1|−|150|°C| |Tamb|operating ambient temperature|note 1|−65|+150|°C| ## **Note** 1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth(j-a)|thermal resistance from junction to<br>ambient|in free air; notes 1 and 2|400|K/W| |Rth(j-s)|thermal resistance from junction to<br>soldering point|notes 2 and 3|75|K/W| ## **Notes** 1. Refer to SOD523 (SC-79) standard mounting conditions. 2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Solder point of cathode tab. 2003 Dec 03 3 Philips Semiconductors ## 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package ## PMEG2010AEB ## **CHARACTERISTICS** Tamb = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VF|forward voltage|IF= 0.1 mA|30|60|mV| |||IF= 1 mA|80|110|mV| |||IF= 10 mA|140|190|mV| |||IF= 100 mA|230|290|mV| |||IF= 1000 mA|510|620|mV| |IR|continuous reverse current|VR= 10 V; note 1|0.17|0.6|mA| |||VR= 20 V; note 1|0.32|1.5|mA| |Cd|diode capacitance|VR= 1 V; f = 1 MHz|19|25|pF| ## **Note** 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Dec 03 4 Philips Semiconductors ## 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package ## PMEG2010AEB ## **GRAPHICAL DATA** **==> picture [242 x 291] intentionally omitted <==** **----- Start of picture text -----**<br> com001<br>10 [3]<br>IF<br>(mA)<br>10 [2]<br>(1) (2) (3)<br>10<br>1<br>10 [−][1]<br>0 0.2 0.4 0.6 0.8<br>VF (V)<br>(1) Tamb = 85 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −40 °C.<br>Fig.2 Forward current as a function of forward<br>voltage; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 230] intentionally omitted <==** **----- Start of picture text -----**<br> MLE228<br>10 [5]<br>handbook, halfpageIR<br>(µA)<br>10 [4] (1)<br>10 [3]<br>(2)<br>10 [2]<br>10<br>1 (3)<br>10 [−][1]<br>0 8 16 24<br>VR (V)<br>(1) Tamb = 85 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −40 °C.<br>**----- End of picture text -----**<br> **==> picture [201 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.3 Reverse current as a function of reverse<br>voltage; typical values.<br>**----- End of picture text -----**<br> **==> picture [191 x 222] intentionally omitted <==** **----- Start of picture text -----**<br> com002<br>30<br>Cd<br> (pF)<br>25<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20<br>VR (V)<br>f = 1 MHz; Tamb = 25 °C.<br>**----- End of picture text -----**<br> Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Dec 03 5 Philips Semiconductors ## 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package ## PMEG2010AEB ## **PACKAGE OUTLINE** ## **Plastic surface mounted package; 2 leads** ## **SOD523V** **==> picture [495 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>c<br>HE v M A<br>D A<br>0 0.5 1 mm<br>scale<br>1 2<br>DIMENSIONS (mm are the original dimensions)<br>E bp<br>UNIT A bp c D E HE v<br>0.65 0.34 0.17 1.25 0.85 1.65<br>mm 0.1<br>(1) 0.58 0.26 0.11 1.15 0.75 1.55<br>Note<br>1. The marking bar indicates the cathode.<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>00-12-07<br> SOD523V SC-79<br>02-04-19<br>**----- End of picture text -----**<br> 2003 Dec 03 6 Philips Semiconductors ## 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package ## PMEG2010AEB ## **DATA SHEET STATUS** |**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**| |---|---|---|---| |I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.| |II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.| |III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).| ## **Notes** 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. ## **DEFINITIONS** **Short-form specification** The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. **Limiting values definition** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ## **DISCLAIMERS** **Life support applications** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes** Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Dec 03 7 ## **Philips Semiconductors – a worldwide company** ## **Contact information** For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . > © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **==> picture [214 x 95] intentionally omitted <==** Printed in The Netherlands R76/01/pp8 Date of release: 2003 Dec 03 Document order number: 9397 750 11911
Updated at June 7, 2026
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