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PMD2001D,115
Bipolar Transistor Array, NPN, PNP, 40 V, 40 V, 600 mA, 600 mA, 320 mW
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- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation Pd:320mW; DC Collector Current:600mA; DC Current Gain hFE:50hFE; T
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- Power Dissipation NPN: 320mW
- Power Dissipation PNP: 320mW
- Transistor Case Style: SOT-457
- Transition Frequency NPN: -
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 50hFE
- DC Current Gain hFE Min PNP: 50hFE
- Continuous Collector Current NPN: 600mA
- Continuous Collector Current PNP: 600mA
- Collector Emitter Voltage Max NPN: 40V
- Collector Emitter Voltage Max PNP: 40V
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.088 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at April 26, 2026