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PMCPB5530X,115
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 5.3 A, 5.3 A, 0.026 ohm
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- Manufacturer: NEXPERIA
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:650m
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-1118
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.17W
- Power Dissipation P Channel: 1.17W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 5.3A
- Continuous Drain Current Id P Channel: 5.3A
- Drain Source On State Resistance N Channel: 0.026ohm
- Drain Source On State Resistance P Channel: 0.026ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.202 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**20 V, complementary Trench MOSFET** **Product data sheet** ## **PMCPB5530X** **Rev. 1 — 26 June 2012** ## **1. Product profile** ## **1.1 General description** Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ## **1.2 Features and benefits** - Very fast switching - Trench MOSFET technology - Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm - Exposed drain pad for excellent thermal conduction ## **1.3 Applications** - Charging switch for portable devices - DC-to-DC converters - Small brushless DC motor drive - Power management in battery-driven portables - Hard disc and computing power management ## **1.4 Quick reference data** |**Table 1.**|**Quick reference data**||||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**TR1 (N-channel), Static characteristics**|||||||| |RDSon|drain-source on-state|VGS= 4.5 V; ID= 3 A; Tj= 25 °C||-|26|34|mΩ| ||resistance||||||| |**TR2 (P-channel), Static characteristics**|||||||| |RDSon|drain-source on-state|VGS= -4.5 V; ID= -3.4 A; Tj= 25 °C||-|55|70|mΩ| ||resistance||||||| |**TR1 (N-channel)**|||||||| |VDS|drain-source voltage|Tj= 25 °C||-|-|20|V| |VGS|gate-source voltage|||-12|-|12|V| |ID|drain current|VGS= 4.5 V; Tamb= 25 °C; t ≤ 5 s|[1]|-|-|5.3|A| **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** **Table 1. Quick reference data** _…continued_ |**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**TR2 (P-channel)**|| |VDS<br>drain-source voltage<br>Tj= 25 °C<br>VGS<br>gate-source voltage|-<br>-<br>-20<br>V| ||-12<br>-<br>12<br>V| |ID<br>drain current<br>VGS= -4.5 V; Tamb= 25 °C; t ≤ 5 s|[1]<br>-<br>-<br>-4.5<br>A| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm[2] . ## **2. Pinning information** **Table 2. Pinning information** |**Pin**|**Symbol**|**Description**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**||||**Graphic symbol**|**Graphic symbol**|**Graphic symbol**|**Graphic symbol**|||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |1|S1|source TR1|||||||||||||||||||| |2|G1|gate TR1|||6||5||4||||||D1|||D2|||| |3|D2|drain TR2|||||||||||||||||||| |4|S2|source TR2|||7||||8||||||||||||| ||||||||||||||||||||||| |5|G2|gate TR2|||||||||||||||||||| |6|D1|drain TR1|||1||2||3||||G1||S1|||S2||G2|| |7|D1|drain TR1||Transparent||||top view||||||||||_017aaa261_|||| |8|D2|drain TR2|**DFN2020-6 (SOT1118)**||||||||||||||||||| ## **3. Ordering information** ## **Table 3. Ordering information** |**Type number**|**Package**| |---|---| ||**Name**<br>**Description**<br>**Version**| |PMCPB5530X|DFN2020-6<br>plastic thermal enhanced ultra thin small outline package;<br>no leads; 6 terminals<br>SOT1118| ## **4. Marking** |**Table 4.**<br>**Marking codes**|| |---|---| |**Type number**|**Marking code**| |PMCPB5530X|1W| ## **5. Limiting values** **Table 5. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Max**<br>**Unit**| |---|---| |**TR1 (N-channel)**|| |VDS<br>drain-source voltage<br>Tj= 25 °C<br>VGS<br>gate-source voltage|-<br>20<br>V| ||-12<br>12<br>V| All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved PMCPB5530X **Product data sheet** **Rev. 1 — 26 June 2012** **2 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** **Table 5. Limiting values** _…continued_ _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Max**<br>**Unit**| |---|---|---| |ID<br>drain current|VGS= 4.5 V; Tamb= 25 °C; t ≤ 5 s|[1]<br>-<br>5.3<br>A| ||VGS= 4.5 V; Tamb= 25 °C|[1]<br>-<br>4<br>A| ||VGS= 4.5 V; Tamb= 100 °C|[1]<br>-<br>2.6<br>A| |IDM<br>peak drain current|Tamb= 25 °C; single pulse; tp≤10 µs|-<br>12<br>A| |Ptot<br>total power dissipation|Tamb= 25 °C|[2]<br>-<br>490<br>mW| |||[1]<br>-<br>1170<br>mW| ||Tsp= 25 °C|-<br>8330<br>mW| |**TR1 (N-channel), Source-drain diode**||| |IS<br>source current|Tamb= 25 °C|[1]<br>-<br>1.2<br>A| |**TR2 (P-channel)**||| |VDS<br>drain-source voltage|Tj= 25 °C|-<br>-20<br>V| |VGS<br>gate-source voltage||-12<br>12<br>V| |ID<br>drain current|VGS= -4.5 V; Tamb= 25 °C; t ≤ 5 s|[1]<br>-<br>-4.5<br>A| ||VGS= -4.5 V; Tamb= 25 °C|[1]<br>-<br>-3.4<br>A| ||VGS= -4.5 V; Tamb= 100 °C|[1]<br>-<br>-2.2<br>A| |IDM<br>peak drain current|Tamb= 25 °C; single pulse; tp≤10 µs|-<br>-14<br>A| |Ptot<br>total power dissipation|Tamb= 25 °C|[2]<br>-<br>490<br>mW| |||[1]<br>-<br>1170<br>mW| ||Tsp= 25 °C|-<br>8330<br>mW| |**TR2 (P-channel), Source-drain diode**||| |IS<br>source current|Tamb= 25 °C|[1]<br>-<br>-1.2<br>A| |**Per device**||| |Tj<br>junction temperature||-55<br>150<br>°C| |Tamb<br>ambient temperature||-55<br>150<br>°C| |Tstg<br>storage temperature||-65<br>150<br>°C| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm[2] . [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** © Nexperia B.V. 2017. All rights reserved **3 of 18** **PMCPB5530X** **Nexperia** ## **20 V, complementary Trench MOSFET** **==> picture [437 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa123 017aaa124<br>120 120<br>Pder Ider<br>(%)80 ELEN LEEE (%)80 ELLINEEEE<br>ELLEN ELE COCECPENCEL<br>40 EEL LEN EE 40 ELLEN<br>0 0<br>− 75 − 25 25 75 125 175 − 75 − 25 25 75 125 175<br>Tj ( ° C) Tj ( ° C)<br>**----- End of picture text -----**<br> **Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of junction temperature function of junction temperature** _017aaa637_ **==> picture [436 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2]<br>ID Limit RDSon = VDS/ID<br>(A) a ane<br>10 eea ee ee ee ee<br>tp = 10 μs<br>Seee<br>1 _—=$+} te} 6 Fed Pt tp = 100 H+] μs He |] |]<br>DC; T sp = 25 °C t p = 10 ms<br>——es a eea eee<br>tp = 100 ms<br>10 [-1] DC; Tamb = 25 °C;<br>drain mounting pad 6 cm [2]<br>e eaere|eet—_}—_ottee ne e<br>pCMt—“<é~sTSC“(‘(iSdrTSC( ese ee<br>10 [-2] PEE EEST | P T PP TE TT<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> IDM = single pulse **Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage** PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** © Nexperia B.V. 2017. All rights reserved **4 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa410<br>-10 [2]<br>(A)ID Limit RDSon = VDS/ID<br>-10<br>(1)<br>(2)<br>-1<br>(3)<br>(4)<br>(5)<br>-10 [-1]<br>(6)<br>-10 [-2]<br>-10 [-1] -1 -10 -10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> IDM = single pulse (1) tp = 10 µs (2) tp = 100 µs (3) DC; Tsp = 25 °C (4) tp = 10 ms (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm[2] **Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage** ## **6. Thermal characteristics** ## **Table 6. Thermal characteristics** |**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**TR1 (N-channel)**|| |Rth(j-a)<br>thermal resistance<br>from junction to<br>ambient<br>in free air|[1]<br>-<br>223<br>256<br>K/W| ||[2]<br>-<br>93<br>107<br>K/W| ||[3]<br>-<br>55<br>63<br>K/W| |Rth(j-sp)<br>thermal resistance<br>from junction to solder<br>point|-<br>10<br>15<br>K/W| |**TR2 (P-channel)**|| |Rth(j-a)<br>thermal resistance<br>from junction to<br>ambient<br>in free air|[1]<br>-<br>223<br>256<br>K/W| ||[2]<br>-<br>93<br>107<br>K/W| ||[3]<br>-<br>55<br>63<br>K/W| |Rth(j-sp)<br>thermal resistance<br>from junction to solder<br>point|-<br>10<br>15<br>K/W| [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm[2] . [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm[2] , t ≤ 5 s. All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved PMCPB5530X **Product data sheet** **Rev. 1 — 26 June 2012** **5 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** ## **7. Characteristics** |**Table 7.**<br>**Characteristics**|**Table 7.**<br>**Characteristics**|| |---|---|---| |**Symbol**<br>**Parameter**<br>**Conditions**||**Min**<br>**Typ**<br>**Max**<br>**Unit**| |**TR1 (N-channel), Static characteristics**||| |V(BR)DSS<br>drain-source<br>breakdown voltage|ID= 250 µA; VGS= 0 V; Tj= 25 °C|20<br>-<br>-<br>V| |VGSth<br>gate-source threshold<br>voltage|ID= 250 µA; VDS= VGS; Tj= 25 °C|0.4<br>0.65<br>0.9<br>V| |IDSS<br>drain leakage current|VDS= 20 V; VGS= 0 V; Tj= 25 °C|-<br>-<br>1<br>µA| ||VDS= 20 V; VGS= 0 V; Tj= 150 °C|-<br>-<br>11<br>µA| |IGSS<br>gate leakage current|VGS= 12 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>100<br>nA| ||VGS= -12 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>100<br>nA| |RDSon<br>drain-source on-state<br>resistance|VGS= 4.5 V; ID= 3 A; Tj= 25 °C|-<br>26<br>34<br>mΩ| ||VGS= 4.5 V; ID= 3 A; Tj= 150 °C|-<br>49<br>63<br>mΩ| ||VGS= 2.5 V; ID= 1.4 A; Tj= 25 °C|-<br>33<br>46<br>mΩ| ||VGS= 1.8 V; ID= 1.4 A; Tj= 25 °C|-<br>50<br>69<br>mΩ| |gfs<br>transfer conductance|VDS= 5 V; ID= 3 A; Tj= 25 °C|-<br>12<br>-<br>S| |**TR1 (N-channel), Dynamic characteristics**||| |QG(tot)<br>total gate charge<br>VDS= 10 V; ID= 3 A; VGS= 4.5 V;<br>Tj= 25 °C<br>QGS<br>gate-source charge<br>QGD<br>gate-drain charge||-<br>14.4<br>21.7<br>nC| |||-<br>1.1<br>-<br>nC| |||-<br>1.5<br>-<br>nC| |Ciss<br>input capacitance<br>VDS= 10 V; f = 1 MHz; VGS= 0 V;<br>Tj= 25 °C<br>Coss<br>output capacitance<br>Crss<br>reverse transfer<br>capacitance||-<br>660<br>-<br>pF| |||-<br>87<br>-<br>pF| |||-<br>74<br>-<br>pF| |td(on)<br>turn-on delay time<br>VDS= 10 V; ID= 3 A; VGS= 4.5 V;<br>RG(ext)= 6 Ω; Tj= 25 °C<br>tr<br>rise time<br>td(off)<br>turn-off delay time<br>tf<br>fall time||-<br>4<br>-<br>ns| |||-<br>15<br>-<br>ns| |||-<br>40<br>-<br>ns| |||-<br>16<br>-<br>ns| |**TR1 (N-channel), Source-drain diode characteristics**||| |VSD<br>source-drain voltage<br>IS= 1.2 A; VGS= 0 V; Tj= 25 °C||-<br>0.8<br>1.2<br>V| |**TR2 (P-channel), Static characteristics**||| |V(BR)DSS<br>drain-source<br>breakdown voltage|ID= -250 µA; VGS= 0 V; Tj= 25 °C|-20<br>-<br>-<br>V| |VGSth<br>gate-source threshold<br>voltage|ID= -250 µA; VDS= VGS; Tj= 25 °C|-0.47<br>-0.65<br>-0.9<br>V| |IDSS<br>drain leakage current|VDS= -20 V; VGS= 0 V; Tj= 25 °C|-<br>-<br>-1<br>µA| ||VDS= -20 V; VGS= 0 V; Tj= 150 °C|-<br>-<br>-10<br>µA| |IGSS<br>gate leakage current|VGS= 12 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>-100<br>nA| ||VGS= -12 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>-100<br>nA| © Nexperia B.V. 2017. All rights reserved PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** **6 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** **Table 7. Characteristics** _…continued_ |**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---|---| |RDSon<br>drain-source on-state<br>resistance|VGS= -4.5 V; ID= -3.4 A; Tj= 25 °C|-<br>55<br>70<br>mΩ| ||VGS= -4.5 V; ID= -3.4 A; Tj= 150 °C|-<br>78<br>99<br>mΩ| ||VGS= -2.5 V; ID= -3 A; Tj= 25 °C|-<br>75<br>90<br>mΩ| ||VGS= -1.8 V; ID= -1.5 A; Tj= 25 °C|-<br>110<br>135<br>mΩ| |gfs<br>transfer conductance|VDS= -10 V; ID= -3.4 A; Tj= 25 °C|-<br>15<br>-<br>S| |**TR2 (P-channel), Dynamic characteristics**||| |QG(tot)<br>total gate charge<br>VDS= -10 V; ID= -3.4 A; VGS= -5 V;<br>Tj= 25 °C<br>QGS<br>gate-source charge<br>QGD<br>gate-drain charge||-<br>8.1<br>12.2<br>nC| |||-<br>1.2<br>-<br>nC| |||-<br>1.5<br>-<br>nC| |Ciss<br>input capacitance<br>VDS= -10 V; f = 1 MHz; VGS= 0 V;<br>Tj= 25 °C<br>Coss<br>output capacitance<br>Crss<br>reverse transfer<br>capacitance||-<br>785<br>-<br>pF| |||-<br>63<br>-<br>pF| |||-<br>53<br>-<br>pF| |td(on)<br>turn-on delay time<br>VDS= -10 V; ID= -3.4 A; VGS= -5 V;<br>RG(ext)= 6 Ω; Tj= 25 °C<br>tr<br>rise time<br>td(off)<br>turn-off delay time<br>tf<br>fall time||-<br>4<br>-<br>ns| |||-<br>14<br>-<br>ns| |||-<br>40<br>-<br>ns| |||-<br>16<br>-<br>ns| |**TR2 (P-channel), Source-drain diode characteristics**||| |VSD<br>source-drain voltage<br>IS= -1.2 A; VGS= 0 V; Tj= 25 °C||-<br>-0.8<br>-1.2<br>V| **==> picture [497 x 248] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa638 017aaa639<br>15 10 [-3]<br>4.5 V<br>3.0 V 2.0 V<br>ID 2.5 V ID<br>(A) 2.2 V (A)<br>10 10 [-4]<br>1.8 V<br>min typ max<br>5 10 [-5]<br>VGS = 1.5 V<br>0 10 [-6]<br>0 2 4 6 0 0.5 1.0 1.5<br>VDS (V) VGS (V)<br>Tj = 25 °C Tj = 25 °C; VDS = 5 V<br>Fig 5. TR1: Output characteristics: drain current as a Fig 6. TR1: Sub-threshold drain current as a function<br>function of drain-source voltage; typical values of gate-source voltage<br>**----- End of picture text -----**<br> PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** © Nexperia B.V. 2017. All rights reserved **7 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** **==> picture [439 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa640 017aaa641<br>120 120<br>1.8 V 2 V<br>RDSon RDSon<br>(mΩ) TTT Ty (mΩ) TTT<br>80 80<br>ava aac<br>4p" Bune<br>2.5 V Tj = 150 °C<br>40 40<br>3 V<br>ert S\oann<br>VGS = 4.5 V<br>aa Se<br>Tj = 25 °C<br>0 PTT 0 PL<br>0 4 8 12 0 4 8 12<br>ID (A) VGS (V)<br>**----- End of picture text -----**<br> Tj = 25 °C **Fig 7. TR1: Drain-source on-state resistance as a function of drain current; typical values** ID = 2 A **Fig 8. TR1: Drain-source on-state resistance as a function of gate-source voltage; typical values** **==> picture [435 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa642 017aaa643<br>12 1.8<br>ID a<br>(A) 8 TTTaniSoe ine 1.4 TTTTASaaeZenn<br>4 1.0<br>Sanson Tj = 150 °C Tj = 25 °C TT<br>ye EP4nnnee<br>0 TT 0.6 ATT<br>0 1 2 3 -60 0 60 120 180<br>VGS (V) Tj (°C)<br>VDS > ID × RDSon<br>**----- End of picture text -----**<br> **Fig 9. TR1: Transfer characteristics: drain current as a function of gate-source voltage; typical values** **Fig 10. TR1: Normalized drain-source on-state resistance as a function of junction temperature; typical values** PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** © Nexperia B.V. 2017. All rights reserved **8 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** **==> picture [497 x 505] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa644 017aaa645<br>1.5 10 [3]<br>Ciss<br>VGS(th) C<br>(V) (pF)<br>1.0 max 10 [2] Coss<br>Crss<br>typ<br>0.5 10<br>min<br>0 1<br>-60 0 60 120 180 10 [-1] 1 10 10 [2]<br>Tj (°C) VDS (V)<br>ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V<br>Fig 11. TR1: Gate-source threshold voltage as a Fig 12. TR1: Input, output and reverse transfer<br>function of junction temperature capacitances as a function of drain-source<br>voltage; typical values<br>017aaa646<br>5<br>VGS VDS<br>(V)<br>4 ID<br>VGS(pl)<br>3<br>VGS(th)<br>2 VGS<br>QGS1 QGS2<br>1 QGS QGD<br>QG(tot)<br>017aaa137<br>0<br>0 2 4 6 8<br>QG (nC)<br>ID = 3 A; VDS = 10 V; Tamb = 25 °C<br>Fig 13. TR1: Gate-source voltage as a function of gate Fig 14. Gate charge waveform definitions<br>charge; typical values<br>**----- End of picture text -----**<br> PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** © Nexperia B.V. 2017. All rights reserved **9 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** **==> picture [481 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa647 017aaa411<br>12 -4<br>-4.5 V<br>ID -2.5 V<br>IS (A)<br>(A) -1.8 V<br>-3 -1.4 V<br>8<br>VGS = -1.2 V<br>-2<br>4<br>Tj = 150 °C Tj = 25 °C -1<br>-1.0 V<br>0 0<br>0 0.4 0.8 1.2 0 -1 -2 -3<br>VSD (V) VDS (V)<br>VGS = 0 V Tj = 25 °C<br>**----- End of picture text -----**<br> **Fig 15. TR1: Source current as a function of source-drain voltage; typical values** **Fig 16. TR2: Output characteristics: drain current as a function of drain-source voltage; typical values** **==> picture [467 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa412 017aaa413<br>-10 [-3] 0.24<br>RDSon -1.2 V<br>ID (Ω)<br>(A)<br>0.16<br>(1) (2) (3)<br>-10 [-4] VGS = -1.4 V<br>-1.6 V<br>0.08<br>-2.5 V<br>-4.5 V<br>-10 [-5] 0<br>0 -0.25 -0.50 -0.75 -1.00 -1.25 0 -1 -2 -3 -4<br>VGS (V) ID (A)<br>Tj = 25 °C; VDS = −5 V Tj = 25 °C<br>(1) minimum values<br>(2) typical values<br>(3) maximum values<br>Fig 17. TR2: Sub-threshold drain current as a function Fig 18. TR2: Drain-source on-state resistance as a<br>of gate-source voltage function of drain current; typical values<br>**----- End of picture text -----**<br> PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** © Nexperia B.V. 2017. All rights reserved **10 of 18** **PMCPB5530X** **Nexperia** ## **20 V, complementary Trench MOSFET** **==> picture [190 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa414<br>1.0<br>RDSon<br>(Ω)<br>0.8<br>Apo<br>0.6 Spo<br>(1) (2)<br>0.4 fe<br>Pt tt ty ty<br>0.2<br>ee<br>0 SS}<br>0 -1 -2 -3 -4<br>VGS (V)<br>ID = -1 A<br>(1) Tj = 150 °C<br>**----- End of picture text -----**<br> - (2) Tj = 25 °C **Fig 19. TR2: Drain-source on-state resistance as a function of gate-source voltage; typical values** **==> picture [188 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa415<br>-4<br>ID<br>(A)<br>-3 Seer ee<br>aie<br>-2<br>fee<br>(2) (1)<br>-1 Ty Tal Ty<br>OA<br>0 || LY | ft<br>0 -0.5 -1.0 -1.5 -2.0<br>VGS (V)<br>VDS > ID × RDSon<br>(1) Tj = 25 °C<br>**----- End of picture text -----**<br> - (2) Tj = 150 °C **Fig 20. TR2: Transfer characteristics: drain current as a function of gate-source voltage; typical values** **==> picture [433 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa416 017aaa417<br>2.0 -1.5<br>a “TELL<br>VGS(th)<br>(V)<br>1.5<br>PERE EE -1.0 eee<br>—CEL LL oo (1)<br>1.0<br>| (2)<br>Sere -0.5 — (3)<br>0.5<br>STOO) | RSR R eEEE<br>ePeELEL SI =e<br>0 ELL ELLE 0 ELLEL RL<br>-60 0 60 120 180 -60 0 60 120 180<br>Tj (°C) Tj (°C)<br>ID = -0.25 mA; VDS = VGS<br>**----- End of picture text -----**<br> (1) maximum values - (2) typical values - (3) minimum values **Fig 21. TR2: Normalized drain-source on-state resistance as a function of junction temperature; typical values** **Fig 22. TR2: Gate-source threshold voltage as a function of junction temperature** PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** © Nexperia B.V. 2017. All rights reserved **11 of 18** **PMCPB5530X** **Nexperia** ## **20 V, complementary Trench MOSFET** **==> picture [497 x 560] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa418 017aaa419<br>10 [4] -6<br>C VGS<br>(pF) (V)<br>10 [3] -4<br>(1)<br>10 [2] -2<br>(2)<br>(3)<br>10 0<br>0 -1 -10 -10 [2] 0 2 4 6<br>VDS (V) QG (nC)<br>f = 1 MHz; VGS = 0 V ID = −3.3 A; VDS = −10 V; Tamb = 25 °C<br>(1) Ciss<br>(2) Coss<br>(3) Crss<br>Fig 23. TR2: Input, output and reverse transfer Fig 24. TR2: Gate-source voltage as a function of gate<br>capacitances as a function of drain-source charge; typical values<br>voltage; typical values<br>017aaa420<br>-4.0<br>IS<br>(A)<br>-3.0<br>-2.0<br>(1) (2)<br>-1.0<br>0<br>0 -0.4 -0.8 -1.2<br>VSD (V)<br>VGS = 0 V<br>(1) Tamb = 150 °C<br>(2) Tamb = 25 °C<br>Fig 25. TR2: Source current as a function of source-drain voltage; typical values<br>**----- End of picture text -----**<br> PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** © Nexperia B.V. 2017. All rights reserved **12 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** ## **8. Test information** **==> picture [497 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> P duty cycle δ = t1<br>t2 t2<br>t1<br>t<br>006aaa812<br>Fig 26. Duty cycle definition<br>9. Package outline<br>2.1 0.65<br>1.9 max<br>1.1 0.04<br>0.9 max<br>0.77<br>0.57 3 4<br>0.65<br>(2 × )<br>2.1 (4 × )<br>1.9 0.54<br>0.44 0.35<br>(2 × ) 1 6 0.25<br>(6 × )<br>0.3<br>0.2<br>Dimensions in mm 10-05-31<br>Fig 27. DFN2020-6 (SOT1118)<br>**----- End of picture text -----**<br> PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 26 June 2012** **13 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** ## **10. Soldering** **==> picture [357 x 242] intentionally omitted <==** **----- Start of picture text -----**<br> 2.1<br>0.65 0.65<br>0.49 0.49<br>0.3 0.4<br>(6 × ) (6 × )<br>solder lands<br>0.875<br>solder paste<br>1.05 1.15<br>2.25<br>(2 × ) (2 × )<br>solder resist<br>0.875<br>occupied area<br>Dimensions in mm<br>0.35 0.72<br>(6 × ) (2 × )<br>0.45 0.82<br>(6 × ) (2 × ) sot1118_fr<br>**----- End of picture text -----**<br> **Fig 28. Reflow soldering footprint for SOT1118 (DFN2020-6)** PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 26 June 2012** **14 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** ## **11. Revision history** |**Table 8.**|**Revision**|**history**|||| |---|---|---|---|---|---| |**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |PMCPB5530X v.1||20120626|Product data sheet|-|-| PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 26 June 2012** © Nexperia B.V. 2017. All rights reserved **15 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** ## **12. Legal information** ## **12.1 Data sheet status** |**Document statu**~~**s**~~**[1]**<br> **[2]**|**Product status[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. ## **12.2 Definitions** **Right to make changes** — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Preview** — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Suitability for use in automotive applications** — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. **Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Applications** — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. ## **12.3 Disclaimers** **Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. **Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of Nexperia. PMCPB5530X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Product data sheet** **Rev. 1 — 26 June 2012** **16 of 18** **PMCPB5530X** **Nexperia** ## **20 V, complementary Trench MOSFET** Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale** — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. **Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. ## **12.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. **No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. ## **13. Contact information** For more information, please visit:http://www.nexperia.com For sales office addresses, please send an email to:salesaddresses@nexperia.com PMCPB5530X **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 26 June 2012** **17 of 18** **PMCPB5530X** **Nexperia** **20 V, complementary Trench MOSFET** ## **14. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . .1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . .1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . .1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . .2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . .2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . .5**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6**| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . .13**| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .13**| |**10**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14**| |**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .15**| |**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .16**| |12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . .16| |12.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .16| |12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .16| |12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .17| |**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . .17**| > © **Nexperia B.V. 2017. All rights reserved** For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com **Date of release: 26 June 2012**
Updated at June 9, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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