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This product is RoHS compilant


Bipolar Transistor Array, NPN, PNP, 40 V, 200 mA, 350 mW, 100 hFE, SOT-363

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • DC Current Gain hFE: 100hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: NPN, PNP
  • DC Collector Current: 200mA
  • Power Dissipation Pd: 350mW
  • Power Dissipation NPN: 350mW
  • Power Dissipation PNP: 350mW
  • Transistor Case Style: SOT-363
  • Transition Frequency NPN: 300MHz
  • Transition Frequency PNP: 250MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 100hFE
  • DC Current Gain hFE Min PNP: 100hFE
  • Continuous Collector Current NPN: 200mA
  • Continuous Collector Current PNP: 200mA
  • Collector Emitter Voltage Max NPN: 40V
  • Collector Emitter Voltage Max PNP: 40V
  • Collector Emitter Voltage V(br)ceo: 40V
Delivery and price
Units per pack 5000
Price 0.043 €
Current stock 23890
Lead time 7 days