PMBD353,215
Small Signal Schottky Diode, Dual Series, 4 V, 30 mA, 600 mV, 100 °C
- Manufacturer: NEXPERIA
- Product type:
- Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:4V; Forward Current If(AV):30mA; Forward Voltage VF Max:600mV; Forward Surge Current Ifsm Max:-; Operating Temperature Max:100
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-23
- Diode Configuration: Dual Series
- Forward Voltage Max: 600mV
- Forward Surge Current: -
- Reverse Recovery Time: -
- Average Forward Current: 30mA
- Operating Temperature Max: 100°C
- Repetitive Peak Reverse Voltage: 4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.141 € |
| Current stock | 100+ |
| Lead time | 30 days |
## **DISCRETE SEMICONDUCTORS** ## **DATA SHEET** **==> picture [201 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> ook, halfpage<br>M3D088<br>**----- End of picture text -----**<br> ## **PMBD352; PMBD353** Schottky barrier double diodes Supersedes data of January 1995 File under Discrete Semiconductors, SC01 1996 Mar 20 **Philips Semiconductors** ## **Schottky barrier double diodes** ## **PMBD352; PMBD353** ## **FEATURES** ## **PINNING** **==> picture [497 x 336] intentionally omitted <==** **----- Start of picture text -----**<br> • Low forward voltage PIN DESCRIPTION<br>• Small SMD package<br>PMBD352 (see Fig.2)<br>• Low capacitance. 1 a1 fpage 3<br>2 k2 1 2<br>APPLICATIONS<br>3 k1, a2<br>MLC358<br>• UHF mixer<br>PMBD353 (see Fig.3)<br>• Sampling circuits<br>1 k1<br>• Modulators Fig.2 PMBD352 diode<br>• Phase detection. 2 a2 configuration (symbol).<br>3 a1, k2<br>DESCRIPTION<br>Planar Schottky barrier double diodes handbook, 2 columns 3<br>in series connection with different<br>pinning. handbook, 2 columns 3<br>The diodes are encapsulated in a<br>SOT23 small plastic SMD package. 1 2<br>1 2<br>MGC487<br>MARKING<br>Top view MGC421<br>TYPE<br>MARKING CODE<br>NUMBER Fig.1 Simplified outline<br>(SOT23) and pin Fig.3 PMBD353 diode<br>PMBD352 p5g<br>configuration. configuration (symbol).<br>PMBD353 p4f<br>**----- End of picture text -----**<br> ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 134). |**SYMBOL**|**PARAMETER**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---| |**Per diode**||||| |VR|continuous reverse voltage|−|4|V| |IF|continuous forward current|−|30|mA| |Tstg|storage temperature|−65|+150|°C| |Tj|junction temperature|−|100|°C| 1996 Mar 20 2 Philips Semiconductors ## Schottky barrier double diodes ## PMBD352; PMBD353 ## **ELECTRICAL CHARACTERISTICS** Tamb = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MAX.**|**UNIT**| |---|---|---|---|---| |**Per diode**||||| |VF|forward voltage|see Fig.4<br>IF= 0.1 mA<br>IF= 1 mA<br>IF= 10 mA|350<br>450<br>600|mV<br>mV<br>mV| |IR|reverse current|VR= 3 V; note 1; see Fig.5|0.25|µA| |Cd|diode capacitance|f = 1 MHz; VR= 0 V; see Fig.6|1|pF| ## **Note** 1. Pulsed test: tp = 300 µs; δ = 0.02. ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth j-a|thermal resistance from junction to ambient|note 1|500|K/W| ## **Note** 1. Refer to SOT23 standard mounting conditions. 1996 Mar 20 3 Philips Semiconductors ## Schottky barrier double diodes ## PMBD352; PMBD353 ## **GRAPHICAL DATA** **==> picture [241 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> MLC795<br>handbook, hal10 [2] fpage<br>IF<br>(mA)<br>10<br>(1)<br>1 (2)<br>(3)<br>(4)<br>10 [1]<br>10 [2]<br>0 200 400 600 800<br>V (V)F<br>(1) Tamb = 100 °C.<br>**----- End of picture text -----**<br> - (2) Tamb = 60 °C. (3) Tamb = 25 °C. - (4) Tamb = −40 °C. Fig.4 Forward current as a function of forward voltage; typical values. **==> picture [241 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> MLC796<br>10 [4]<br>handbook, hal fpage<br>IR<br>(nA)<br>10 [3] (1)<br>(2)<br>10 [2]<br>(3)<br>10<br>(4)<br>1<br>10 [1]<br>0 1 2 V (V)R 3<br>(1) Tamb = 100 °C.<br>(2) Tamb = 60 °C.<br>**----- End of picture text -----**<br> **==> picture [62 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> (3) Tamb = 25 °C.<br>(4) Tamb = −40 °C.<br>**----- End of picture text -----**<br> Fig.5 Reverse current as a function of reverse voltage; typical values. **==> picture [241 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> MLC797<br>0.8<br>handbook, halfpage<br>Cd<br>(pF)<br>0.7<br>0.6<br>0.5<br>0.4<br>0 1 2 3 V (V)R 4<br>**----- End of picture text -----**<br> **==> picture [136 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> f = 1 MHz; Tamb = 25 °C.<br>**----- End of picture text -----**<br> Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 20 4 Philips Semiconductors ## Schottky barrier double diodes ## PMBD352; PMBD353 ## **PACKAGE OUTLINE** **==> picture [474 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>ok, full pagewidth 2.8<br>B<br>1.9<br>0.150<br>0.75 0.090 0.95 A 0.2 M A B<br>0.60<br>2 1<br>10o max0.1 1.4 2.5<br>max<br>1.2 max<br>10o<br>max<br>3<br>1.1<br>0<br>max 30o 0.48 0.1 0.1 M A B MBC846<br>max<br>TOP VIEW<br>Dimensions in mm.<br>**----- End of picture text -----**<br> **==> picture [468 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.7 SOT23.<br>**----- End of picture text -----**<br> ## **DEFINITIONS** |**DEFINITIONS**|| |---|---| |**Data sheet status**|| |Objective specifcation|This data sheet contains target or goal specifcations for product development.| |Preliminary specifcation|This data sheet contains preliminary data; supplementary data may be published later.| |Product specifcation|This data sheet contains fnal product specifcations.| **Limiting values** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. ## **Application information** ## **LIFE SUPPORT APPLICATIONS** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 20 5
Updated at June 10, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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