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PHT6NQ10T,135
Power MOSFET, N Channel, 100 V, 3 A, 0.09 ohm, SOT-223, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Qualification: -
- Power Dissipation: 8.3W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 3A
- Drain Source On State Resistance: 0.09ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 12000 |
| Price | 0.392 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Philips Semiconductors** **Product specification** ## **N-channel TrenchMOS** **transistor** ## **PHT6NQ10T** ## **FEATURES** - **’Trench’** technology - Low on-state resistance - Fast switching - Low thermal resistance **==> picture [434 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> SYMBOL QUICK REFERENCE DATA<br>d<br>VDSS = 100 V<br>ID = 6.5 A<br>g<br>R ≤ 90 mΩ<br>DS(ON)<br>s<br>**----- End of picture text -----**<br> ## **GENERAL DESCRIPTION** ## **PINNING** ## **SOT223** N-channel enhancement mode **PIN DESCRIPTION** field-effect transistor in a plastic **4** envelope using ’ **trench** ’ 1 gate technology. 2 drain **Applications:-** • Motor and relay drivers 3 source • d.c. to d.c. converters 4 drain (tab) **1 2 3** The PHT6NQ10T is supplied in the SOT223 surface mounting package. ## **LIMITING VALUES** Limiting values in accordance with the Absolute Maximum System (IEC 134) |||**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|||**CONDITIONS**|**CONDITIONS**|||||**MIN.**|**MIN.**||**MAX.**|**MAX.**|**MAX.**||**UNIT**|**UNIT**||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||VDSS|Drain-source voltage|||||Tj= 25 ˚C to 150˚C|||||||-||100||||V|||||| |||VDGR|Drain-gate voltage|||||Tj= 25 ˚C to 150˚C; RGS= 20 kΩ|||||||-||100||||V|||||| |||VGS|Gate-source voltage||||||||||||-||±|20|||V|||||| |||ID|Continuous drain current (dc) Tsp= 25 ˚C||||||||||||-||6.5||||A|||||| |||||||||Tamb= 25 ˚C|||||||-||3||||A|||||| |||ID|Continuous drain current (dc) Tsp= 100 ˚C||||||||||||-||4.1||||A|||||| |||||||||Tamb= 100 ˚C|||||||-||1.9||||A|||||| |||IDM|Pulsed drain current||||||||||||-||26||||A|||||| |||PD|Total power dissipation|||||Tsp= 25 ˚C|||||||-||8.3||||W|||||| |||||||||Tamb= 25 ˚C|||||||-||1.8||||W|||||| |||Tj, Tstg|Operating junction and|||||||||||-|65||150||||˚C|||||| ||||storage temperature|||||||||||||||||||||||| ## **THERMAL RESISTANCES** ||**SYMBOL**<br>**PARAMETER**<br>**CONDITIONS**<br>**TYP.**<br>**MAX.**<br>**UNIT**<br>Rth j-sp<br>Thermal resistance junction to<br>surface mounted, FR4<br>12<br>15<br>K/W<br>solder point<br>board<br>Rth j-amb<br>Thermal resistance junction to<br>surface mounted, FR4<br>70<br>-<br>K/W<br>ambient<br>board| |---|---| August 1999 Rev 1.000 1 Philips Semiconductors Product specification ## N-channel TrenchMOS transistor PHT6NQ10T ## **ELECTRICAL CHARACTERISTICS** Tj= 25˚C unless otherwise specified ||**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|||||**CONDITIONS**|**CONDITIONS**|**CONDITIONS**|**CONDITIONS**|**CONDITIONS**||||**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**|||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||V(BR)DSS|||Drain-source breakdown|||||||||VGS||= 0 V; ID||= 0.25 mA;|||||100|||||-||||-|||V||||||||| |||||voltage||||||||||||||Tj= -55˚C||||89|||||-||||-|||V||||||||| ||VGS(TO)|||Gate|||threshold voltage||||||VDS||= VGS; ID||= 1 mA||||||2||||3||||4|||V||||||||| |||||||||||||||||||Tj= 150˚C||||1.2|||||-||||-|||V||||||||| |||||||||||||||||||Tj= -55˚C|||||-||||||||6|||V||||||||| ||RDS(ON)|||Drain-source on-state|||||||||VGS||= 10 V; ID= 3 A||||||||-|||57||||90|||mΩ|||||||||| |||||resistance||||||||||||||Tj= 150˚C|||||-||||-||216||||mΩ|||||||||| ||IGSS|||Gate|||source|leakage current<br>VGS|||||||=±10 V; VDS= 0 V||||||||-|||10|||100|||||nA||||||||| ||IDSS|||Zero|||gate voltage drain||||||VDS||= 100 V; VGS= 0 V;||||||||-||0.05|||||10||||µA||||||||| |||||current||||||||||||||Tj= 150˚C|||||-||||-||500|||||µA||||||||| ||Qg(tot)|||Total gate charge|||||||||ID=||6 A; VDD||= 80 V; VGS= 10 V||||||-|||21|||||-|||nC||||||||| ||Qgs|||Gate-source||||charge|||||||||||||||-|||2.5|||||-|||nC||||||||| ||Qgd|||Gate-drain(Miller)charge|||||||||||||||||||-|||8.2|||||-|||nC||||||||| ||td on|||Turn-on delay time|||||||||VDD||= 50 V; RD= 8.2Ω;||||||||-||||6||||-|||ns||||||||| ||tr|||Turn-on rise||||time|||||VGS||= 10 V; RG= 5.6Ω||||||||-|||15|||||-|||ns||||||||| ||td off|||Turn-off delay time|||||||||Resistive load||||||||||-|||20|||||-|||ns||||||||| ||tf|||Turn-off fall time|||||||||||||||||||-|||10|||||-|||ns||||||||| ||Ld|||Internal drain inductance|||||||||Measured tab to centre of die||||||||||-|||2.5|||||-|||nH||||||||| ||Ls|||Internal source inductance|||||||||Measured from source lead to|||||source|||||-||||5||||-|||nH||||||||| ||||||||||||||bond pad|||||||||||||||||||||||||||||| ||Ciss|||Input capacitance|||||||||VGS||= 0 V; VDS= 25 V; f = 1 MHz||||||||-|||633|||||-|||pF||||||||| ||Coss|||Output capacitance|||||||||||||||||||-|||103|||||-|||pF||||||||| ||Crss|||Feedback capacitance|||||||||||||||||||-|||61|||||-|||pF||||||||| ## **REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS** Tj = 25˚C unless otherwise specified |**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|||**CONDITIONS**|**CONDITIONS**|**CONDITIONS**|**CONDITIONS**||||**MIN.**|**MIN.**|**MIN.**|**MIN.**|**MIN.**||**TYP.**|**TYP.**|**TYP.**|**TYP.**|**TYP.**||**MAX.**|**MAX.**|**MAX.**|**MAX.**|**MAX.**||**UNIT**|**UNIT**|**UNIT**|**UNIT**|**UNIT**|||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |IS|||Continuous source current||||Tsp= 25 ˚C|||||||||-||||||-|||||5.5||||||A||||||| ||||(body|diode)|||||||||||||||||||||||||||||||||||| |ISM|||Pulsed source current (body|||||||||||||-||||||-|||||26||||||A||||||| ||||diode)||||||||||||||||||||||||||||||||||||| |VSD|||Diode|forward voltage|||IF= 6 A; VGS= 0 V|||||||||-|||||0.8||||||1.2||||||V||||||| |trr|||Reverse recovery time||||IF= 6 A; -dIF/dt = 100 A/µs;|||||||||-|||||55|||||||-|||||ns||||||| |Qrr|||Reverse recoverycharge||||VGS= 0 V; VR= 25 V|||||||||-||||135||||||||-|||||nC||||||| August 1999 Rev 1.000 2 Philips Semiconductors Product specification ## N-channel TrenchMOS transistor ## PHT6NQ10T **==> picture [589 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> Normalised Power Derating, PD (%) 100 Transient thermal impedance, Zth j-sp (K/W)<br>100<br>90<br>D = 0.5<br>80 10<br>70 0.2<br>60 0.1<br>50 1 0.05<br>0.02<br>40 PD tp D = tp/T<br>30 0.1<br>20<br>single pulse<br>10 T<br>0.01<br>0<br>1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01<br>0 25 50 75 100 125 150<br>Solder Point temperature, Tsp (C) Pulse width, tp (s)<br>Fig.1. Normalised power dissipation. Fig.4. Transient thermal impedance.<br>PD% = 100⋅PD/PD 25 ˚C = f(Tsp) Zth j-sp = f(t); parameter D = tp/T<br>**----- End of picture text -----**<br> **==> picture [585 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> Normalised Current Derating, ID (%) 6 Drain Current, ID (A)<br>100 VGS = 10V 5.4 V 5.2 V<br>90 5 8 V<br>80 6 V Tj = 25 C 5 V<br>70 4<br>60<br>4.8 V<br>50 3<br>40<br>30 2 4.6 V<br>20 4.4 V<br>10 1<br>0<br>0 25 50 75 100 125 150 0<br>Solder Point temperature, Tsp (C) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>Drain-Source Voltage, VDS (V)<br>Fig.2. Normalised continuous drain current. Fig.5. Typical output characteristics, Tj = 25 ˚C.j = 25 ˚C. = 25 ˚C.<br>ID% = 100⋅ID/ID 25 ˚C = f(Tsp); VGS ≥ 10 V ID = f(VDS)D = f(VDS) = f(VDS)DS))<br>**----- End of picture text -----**<br> Fig.5. Typical output characteristics, Tj = 25 ˚C.j = 25 ˚C. = 25 ˚C. ID = f(VDS)D = f(VDS) = f(VDS)DS)) **==> picture [213 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> 100 Peak Pulsed Drain Current, IDM (A)<br>RDS(on) = VDS/ ID<br>tp = 10 us<br>10<br>100 us<br>1 ms<br>1<br>D.C. 10 ms<br>100 ms<br>0.1<br>0.01<br>1 10 100 1000<br>Drain-Source Voltage, VDS (V)<br>**----- End of picture text -----**<br> Fig.3. Safe operating area ID & IDM = f(VDS); IDM single pulse; parameter tp **==> picture [206 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> Drain-Source On Resistance, RDS(on) (Ohms)<br>0.2<br>4.6V 4.8V 5 V<br>0.18<br>0.16 5.2 V<br>0.14<br>0.12 5.4 V<br>0.1 6V<br>0.08 8 V<br>0.06<br>VGS = 10V<br>0.04<br>0.02 Tj = 25 C<br>0<br>0 1 2 3 4 5 6<br>Drain Current, ID (A)<br>**----- End of picture text -----**<br> Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID) August 1999 Rev 1.000 3 Philips Semiconductors Product specification ## N-channel TrenchMOS transistor ## PHT6NQ10T **==> picture [324 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> Drain current, ID (A)<br>6<br>VDS > ID X RDS(ON)<br>5<br>4<br>3<br>150 C<br>2<br>Tj = 25 C<br>1<br>0<br>0 1 2 3 4 5 6<br>Gate-source voltage, VGS (V)<br>Fig.7. Typical transfer characteristics.<br>ID = f(VGS)<br>**----- End of picture text -----**<br> **==> picture [340 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> Threshold Voltage, VGS(TO) (V)<br>4.5<br>4 maximum<br>3.5<br>3 typical<br>2.5<br>minimum<br>2<br>1.5<br>1<br>0.5<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>Junction Temperature, Tj (C)<br>Fig.10. Gate threshold voltage.<br>VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS<br>**----- End of picture text -----**<br> **==> picture [700 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 15 Transconductance, gfs (S) 1.0E-01 Drain current, ID (A)<br>14 VDS > ID X RDS(ON)<br>13<br>12 1.0E-02<br>11 Tj = 25 C<br>10<br>minimum<br>9 1.0E-03<br>8 150 C<br>7 typical<br>6 1.0E-04<br>5 maximum<br>4<br>3 1.0E-05<br>2<br>1<br>0 1.0E-06<br>0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>Drain current, ID (A) Gate-source voltage, VGS (V)<br>Fig.8. Typical transconductance, Tj = 25 ˚C. Fig.11. Sub-threshold drain current.<br>gfs = f(ID) ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS<br>**----- End of picture text -----**<br> **==> picture [700 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> Normalised On-state Resistance<br>2.9 Capacitances, Ciss, Coss, Crss (pF)<br>2.7 10000<br>2.5<br>2.3<br>2.1<br>1000 Ciss<br>1.9<br>1.7<br>1.5<br>1.3 Coss<br>100<br>1.1<br>0.9<br>0.7 Crss<br>0.5 10<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.1 1 10 100<br>Junction temperature, Tj (C) Drain-Source Voltage, VDS (V)<br>Fig.9. Normalised drain-source on-state resistance. Fig.12. Typical capacitances, Ciss, Coss, Crss.<br>RDS(ON)/RDS(ON)25 ˚C = f(Tj) C = f(VDS); conditions: VGS = 0 V; f = 1 MHz<br>**----- End of picture text -----**<br> August 1999 Rev 1.000 4 Philips Semiconductors Product specification ## N-channel TrenchMOS transistor ## PHT6NQ10T **==> picture [700 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> Source-Drain Diode Current, IF (A)<br>Gate-source voltage, VGS (V) 6<br>15 VGS = 0 V<br>14 ID = 6A<br>13 5<br>12 Tj = 25 C<br>11 4<br>10 VDD = 20 V<br>9 1 50 C<br>8 3<br>7 VDD = 80 V Tj = 25 C<br>6<br>5 2<br>4<br>3 1<br>2<br>1<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>Gate charge, QG (nC) Source-Drain Voltage, VSDS (V)<br>Fig.13. Typical turn-on gate-charge characteristics. Fig.14. Typical reverse diode current.<br>VGS = f(QG) IF = f(VSDS); conditions: VGS = 0 V; parameter Tj<br>**----- End of picture text -----**<br> August 1999 Rev 1.000 5 Philips Semiconductors Product specification ## N-channel TrenchMOS transistor ## PHT6NQ10T ## **MECHANICAL DATA** **==> picture [975 x 465] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223<br>D B E A X<br>c<br>y<br>HE v M A<br>b1<br>4<br>Q<br>A<br>A1<br>1 2 3 Lp<br>e1 bp w M B detail X<br>e<br>0 2 4 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y<br>mm 1.81.5 0.100.01 0.800.60 3.12.9 0.320.22 6.76.3 3.73.3 4.6 2.3 7.36.7 1.10.7 0.950.85 0.2 0.1 0.1<br>VERSIONOUTLINE IEC JEDEC REFERENCES EIAJ PROJECTIONEUROPEAN ISSUE DATE<br> SOT223 96-11-11<br>97-02-28<br>Fig.15. SOT223 surface mounting package.<br>**----- End of picture text -----**<br> ## **Notes** 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to Discrete Semiconductor Packages, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". August 1999 Rev 1.000 6 Philips Semiconductors Product specification ## N-channel TrenchMOS transistor ## PHT6NQ10T ## **DEFINITIONS** ## **Data sheet status** Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. ## **Limiting values** Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. ## **Application information** Where application information is given, it is advisory and does not form part of the specification. ## **Philips Electronics N.V. 1999** All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. ## **LIFE SUPPORT APPLICATIONS** These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1999 Rev 1.000 7
Updated at April 24, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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