Illustrative purposes only
PHE13009/DG,127
Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A, 80 W, TO-220AB, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: WEEN SEMICONDUCTORS
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Power Dissipation: 80W
- DC Current Gain hFE: 40hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transistor Case Style: TO-220AB
- DC Current Gain hFE Min: 40hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 12A
- Collector Emitter Voltage Max: 400V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.247 € |
| Current stock | 3989 |
| Lead time | 7 days |