PHE13009/DG,127

Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A, 80 W, TO-220AB, Through Hole

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Manufacturer: WEEN SEMICONDUCTORS
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:80W; DC Collector Current:12A; DC Current Gain hFE:40hFE; Transistor
MSL: -
SVHC: Lead (23-Jan-2024)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 80W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: -
Transistor Case Style: TO-220AB
DC Current Gain hFE Min: 40hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 12A
Collector Emitter Voltage Max: 400V

Delivery and price
Units per pack	5000
Price	0.155 €
Current stock	3989
Lead time	7 days

Datasheet

Updated at February 27, 2026