PHE13005,127

Bipolar (BJT) Single Transistor, NPN, 400 V, 4 A, 75 W, TO-220AB, Through Hole

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Manufacturer: WEEN SEMICONDUCTORS
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:75W; DC Collector Current:4A; DC Current Gain hFE:10hFE; Transisto
MSL: MSL 1 - Unlimited
SVHC: To Be Advised
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 75W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: -
Transistor Case Style: TO-220AB
DC Current Gain hFE Min: 10hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 4A
Collector Emitter Voltage Max: 400V

Delivery and price
Units per pack	5000
Price	0.098 €
Current stock	5375
Lead time	7 days

Datasheet

Updated at February 27, 2026