PEMZ7,315

Bipolar Transistor Array, NPN, PNP, 12 V, 12 V, 500 mA, 500 mA, 300 mW

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Manufacturer: NEXPERIA
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:12V; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:200hFE; Transistor Case Style:SO
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: AEC-Q101
Transistor Mounting: Surface Mount
Transistor Polarity: NPN, PNP
Power Dissipation NPN: 300mW
Power Dissipation PNP: 300mW
Transistor Case Style: SOT-666
Transition Frequency NPN: 420MHz
Transition Frequency PNP: 280MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 200hFE
DC Current Gain hFE Min PNP: 200hFE
Continuous Collector Current NPN: 500mA
Continuous Collector Current PNP: 500mA
Collector Emitter Voltage Max NPN: 12V
Collector Emitter Voltage Max PNP: 12V

Delivery and price
Units per pack	5000
Price	0.106 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at April 26, 2026