Illustrative purposes only
PEMZ7,315
Bipolar Transistor Array, NPN, PNP, 12 V, 500 mA, 300 mW, 200 hFE, SOT-666
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 200hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- DC Collector Current: 500mA
- Power Dissipation Pd: 300mW
- Power Dissipation NPN: 300mW
- Power Dissipation PNP: 300mW
- Transistor Case Style: SOT-666
- Transition Frequency NPN: 420MHz
- Transition Frequency PNP: 280MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: 500mA
- Continuous Collector Current PNP: 500mA
- Collector Emitter Voltage Max NPN: 12V
- Collector Emitter Voltage Max PNP: 12V
- Collector Emitter Voltage V(br)ceo: 12V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.069 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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