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PEMT1,115

Bipolar Transistor Array, General Purpose, Dual PNP, 40 V, 100 mA

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-666; No. of Pins:6
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 6Pins
  • Product Range: -
  • Qualification: -
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Dual PNP
  • Power Dissipation NPN: -
  • Power Dissipation PNP: 200mW
  • Transistor Case Style: SOT-666
  • Transition Frequency NPN: -
  • Transition Frequency PNP: 100MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: -
  • DC Current Gain hFE Min PNP: 120hFE
  • Continuous Collector Current NPN: -
  • Continuous Collector Current PNP: 100mA
  • Collector Emitter Voltage Max NPN: -
  • Collector Emitter Voltage Max PNP: 40V
Delivery and price
Units per pack 5000
Price 0.101 €
Current stock 10+
Lead time 30 days
PDF File icon Datasheet

Updated at March 17, 2026