PCP1302-TD-H
Power MOSFET, P Channel, 60 V, 3 A, 0.2 ohm, SOT-89, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: P Channel
- Power Dissipation: 3.5W
- Transistor Mounting: Surface Mount
- Transistor Polarity: P Channel
- Power Dissipation Pd: 3.5W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.2ohm
- Transistor Case Style: SOT-89
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 3A
- Drain Source On State Resistance: 0.2ohm
- Gate Source Threshold Voltage Max: 2.6V
| Delivery and price | |
|---|---|
| Units per pack | 8000 |
| Price | 0.106 € |
| Current stock | 10+ |
| Lead time | 30 days |
## Ordering number : ENA2227 **PCP1302 P-Channel Power MOSFET** ~~—_~~ − − **60V, 3A, 266mΩ, Single PCP** ## @ http://onsemi.com ## **Features** - On-resistance RDS(on)1=200mΩ(typ.) - 4V drive - Halogen free compliance - Protection Diode in ## **Specifications** **Absolute Maximum Ratings** at Ta = 25°C |Parameter|Symbol|Conditions|Value|Unit| |---|---|---|---|---| |Drain to Source Voltage|VDSS||−60|V| |Gate to Source Voltage|VGSS||±20|V| |Drain Current (DC)|ID||−3|A| |Drain Current(Pulse)|IDP|PW≤10μs, dutycycle≤1%|−12|A| |Power Dissipation|PD|Tc=25°C|3.5|W| |||When mounted on ceramic substrate (600mm2×0.8mm)|1.3|W| |Junction Temperature|Tj||150|°C| |Storage Temperature|Tstg||−55 to +150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **Thermal Resistance Ratings** Parameter Symbol Value Unit Junction to Case Steady State R θ JC 35.7 ° C /W Junction to Ambient R θ JA 96.1 ° C /W ~~——sae~~ When mounted on ceramic substrate (600mm[2] × 0.8mm) **Electrical Characteristics** at Ta = 25°C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID= − 1mA, VGS=0V − 60 V Zero-Gate Voltage Drain Current IDSS VDS= − 60V, VGS=0V − 1 μ A ~~—~~ Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V ± 10 μ A Gate Threshold Voltage VGS(th) VDS= − 10V, ID= − 1mA − 1.2 − 2.6 V Forward Transconductance gFS VDS= − 10V, ID= − 1.5A 3.2 S RDS(on)1 ID= − 1.5A, VGS= − 10V 200 266 m Ω Static Drain to Source On-State Resistance RDS(on)2 ID= − 1A, VGS= − 4.5V 245 334 m Ω RDS(on)3 ID= − 1A, VGS= − 4V 260 374 m Ω Input Capacitance Ciss 262 pF Output Capacitance Coss VDS= − 20V, f=1MHz 29 pF ~~———~~ Reverse Transfer Capacitance Crss 19 pF Continued on next page. ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 **June, 2014** 61614 TKIM TC-00003133 No. A2227-1/5 **PCP1302** |||**PCP1302**||||| |---|---|---|---|---|---|---| |Continued frompreceding page.||||||| |Parameter|Symbol|Conditions||Value||Unit| ||||min|typ|max|| |Turn-ON Delay Time|td(on)|See specified Test Circuit.||5.1||ns| |Rise Time|tr|||6.0||ns| |Turn-OFF Delay Time|td(off)|||34||ns| |Fall Time|tf|||21||ns| |Total Gate Charge|Qg|VDS=−30V, VGS=−10V, ID=−3A||6.4||nC| |Gate to Source Charge|Qgs|||0.8||nC| |Gate to Drain “Miller” Charge|Qgd|||1.4||nC| |Forward Diode Voltage|VSD|IS=−3A, VGS=0V||−0.9|−1.5|V| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **Ordering & Package Information Packing Type:TD Marking** |Device|Package|Shipping|note| |---|---|---|---| |PCP1302-TD-H|PCP, SC-62<br>SOT-89, TO-243|1,000<br>pcs. / reel|Pb-Free<br>And<br>Halogen Free| **==> picture [65 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> TD LOT No.<br>**----- End of picture text -----**<br> ## **Electrical Connection** **==> picture [62 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1<br>3<br>**----- End of picture text -----**<br> ## **Switching Time Test Circuit** **==> picture [82 x 94] intentionally omitted <==** No.A2227-2/5 **PCP1302** **==> picture [222 x 735] intentionally omitted <==** **==> picture [222 x 734] intentionally omitted <==** No.A2227-3/5 **PCP1302** **==> picture [467 x 550] intentionally omitted <==** No.A2227-4/5 **PCP1302** ## **Package Dimensions** PCP1302-TD-H ## **SOT-89/PCP-1** CASE 419AU ISSUE O Unit : mm 1: Gate 2: Drain 3: Source **==> picture [332 x 360] intentionally omitted <==** **----- Start of picture text -----**<br> Recommended Soldering<br>Footprint<br>2.2<br>45°<br>45°<br>1.0<br>1.0 1.5<br>3.0<br>0.9<br>3.7<br>1.5 1.8<br>**----- End of picture text -----**<br> Note on usage : Since the PCP1302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A2227-5/5
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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