PBSS5140U,115

## **DISCRETE SEMICONDUCTORS** 

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DATA SHEET<br>ge<br>M3D102<br>**----- End of picture text -----**<br>


**PBSS5140U** 40 V low V PNP transistor CEsat 

Supersedes data of 2001 Mar 27 

2001 Jul 20 

**Philips Semiconductors** 

**PBSS5140U** 

## **40 V low VCEsat PNP transistor** 

## **FEATURES** 

- Low collector-emitter saturation voltage 

- High current capability 

- Improved device reliability due to reduced heat generation 

- Enhanced performance over SOT23 1A standard packaged transistor. 

## **APPLICATIONS** 

- General purpose switching and muting 

- LCD back lighting 

- Supply line switching circuits 

- Battery driven equipment (mobile phones, video cameras and hand-held devices). 

## **DESCRIPTION** 

PNP low VCEsat transistor in a SOT323 (SC-70) plastic package. 

## **MARKING** 

|**MARKING**||
|---|---|
|**TYPE NUMBER**|**MARKING CODE**|
|PBSS5140U|51t|



## **QUICK REFERENCE DATA** 

|**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**|
|---|---|---|---|
|VCEO|collector-emitter voltage|−40|V|
|ICM|peak collector current|−2|A|
|RCEsat|equivalent on-resistance|<500|mΩ|



## **PINNING** 

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PIN DESCRIPTION<br>1 base<br>2 emitter<br>3 collector<br>handbook, halfpage 3<br>3<br>1<br>2<br>1 2<br>Top view MAM048<br>**----- End of picture text -----**<br>


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Fig.1 Simplified outline (SOT323; SC-70) and<br>symbol.<br>**----- End of picture text -----**<br>


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2 

Philips Semiconductors 

## 40 V low VCEsat PNP transistor 

## PBSS5140U 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter|−|−40|V|
|VCEO|collector-emitter voltage|open base|−|−40|V|
|VEBO|emitter-base voltage|open collector|−|−5|V|
|IC|collector current (DC)||−|−1|A|
|ICM|peak collector current||−|−2|A|
|IBM|peak base current||−|−1|A|
|Ptot|total power dissipation|Tamb≤25°C; note 1|−|250|mW|
|||Tamb≤25°C; note 2|−|350|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operating ambient temperature||−65|+150|°C|



## **Notes** 

1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 

2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm[2] . 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth j-a|thermal resistance from junction to<br>ambient|in free air; note 1|500|K/W|
|||in free air; note 2|357|K/W|



## **Notes** 

1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 

2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm[2] . 

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Philips Semiconductors 

## 40 V low VCEsat PNP transistor 

## PBSS5140U 

## **CHARACTERISTICS** 

Tamb = 25 ° 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|---|
|ICBO|collector-base cut-off current|VCB=−40 V; IC= 0|−|−|−100|nA|
|||VCB=−40 V; IC= 0; Tamb= 150°C|−|−|−50|µA|
|ICEO|collector-emitter cut-off current|VCE=−30 V; IB= 0|−|−|−100|nA|
|IEBO|emitter-base cut-off current|VEB=−5 V; IC= 0|−|−|−100|nA|
|hFE|DC current gain|VCE=−5 V; IC=−1 mA|300|−|−||
|||VCE=−5 V; IC=−100 mA|300|−|800||
|||VCE=−5 V; IC=−500 mA|250|−|−||
|||VCE=−5 V; IC=−1 A|160|−|−||
|VCEsat|saturation voltage|IC=−100 mA; IB=−1 mA|−|−|−200|mV|
|||IC=−500 mA; IB=−50 mA|−|−|−250|mV|
|||IC=−1 A; IB=−100 mA|−|−|−500|mV|
|RCEsat|equivalent on-resistance|IC=−500 mA; IB=−50 mA; note 1|−|300|<500|mΩ|
|VBEsat|base-emitter saturation voltage|IC=−1 A; IB=−50 mA|−|−|−1.1|V|
|VBEon|base-emitter turn-on voltage|VCE=−5 V; IC=−1 A|−|−|−1|V|
|fT|transition frequency|IC=−50 mA; VCE=−10 V;<br>f = 100 MHz|150|−|−|MHz|
|Cc|collector capacitance|VCB=−10 V; IE= Ie= 0; f = 1 MHz|−|−|12|pF|



## **Note** 

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

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Philips Semiconductors 

## 40 V low VCEsat PNP transistor 

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MLD543<br>1200<br>handbook, halfpage<br>hFE<br>800 (1)<br>(2)<br>400<br>(3)<br>0<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [4]<br>IC (mA)<br>VCE = −5 V.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>**----- End of picture text -----**<br>


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Fig.2 DC current gain as a function of collector<br>current; typical values.<br>**----- End of picture text -----**<br>


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MLD545<br>−10 [3]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>−10 [2] (1)<br>(3)<br>(2)<br>−10<br>−1<br>−1 −10 −10 [2] −10 [3] −10 [4]<br>IC (mA)<br>IC/IB = 10.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.4 Collector-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br>


## PBSS5140U 

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MLD544<br>−10<br>handbook, halfpage<br>VBE<br>(V)<br>−1 (1)<br>(2)<br>(3)<br>−10 [−][1]<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br>


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VCE = −5 V.<br>**----- End of picture text -----**<br>


(1) Tamb = −55 °C. 

- (2) Tamb = 25 °C. 

- (3) Tamb = 150 °C. 

Fig.3 Base-emitter voltage as a function of collector current; typical values. 

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MLD677<br>10 [2]<br>handbook, halfpage<br>RCEsat<br>(Ω)<br>10<br>(1)<br>(2)<br>1<br>(3)<br>10 [−][1]<br>−10 [−][1] −1 −10 −10 [−][2] −10 [−][3] −10 [−][4]<br>IC (mA)<br>**----- End of picture text -----**<br>


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IC/IB = 10.<br>**----- End of picture text -----**<br>


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(1) Tamb = 150 °C.<br>**----- End of picture text -----**<br>


- (2) Tamb = 25 °C. 

- (3) Tamb = −55 °C. 

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Fig.5 Equivalent on-resistance as a function of<br>collector current; typical values.<br>**----- End of picture text -----**<br>


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Philips Semiconductors 

## 40 V low VCEsat PNP transistor 

## PBSS5140U 

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MLD678<br>300<br>handbook, halfpage<br>fT<br>(MHz)<br>200<br>100<br>0<br>0 −200 −400 −600 −800 −1000<br>IC (mA)<br>VCE = −10 V.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.6 Transition frequency as a function of<br>collector current; typical values.<br>**----- End of picture text -----**<br>


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Philips Semiconductors 

## 40 V low VCEsat PNP transistor 

## PBSS5140U 

## **PACKAGE OUTLINE** 

## **Plastic surface mounted package; 3 leads** 

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SOT323<br>**----- End of picture text -----**<br>


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D B E A<br>X<br>y HE v M A<br>3<br>Q<br>A<br>A1<br>c<br>1 2<br>e1 bp w M B Lp<br>e detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A maxA1 bp c D E e e1 HE Lp Q v w<br>1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23<br>mm 0.1 1.3 0.65 0.2 0.2<br>0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  EIAJ PROJECTION<br> SOT323 SC-70 97-02-28<br>**----- End of picture text -----**<br>


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Philips Semiconductors 

## 40 V low VCEsat PNP transistor 

## PBSS5140U 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DATA SHEET STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITIONS**|
|Objective data|Development|This data sheet contains data from the objective specification for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.|
|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specification.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.|
|Product data|Production|This data sheet contains data from the product specification. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Changes will be<br>communicated according to the Customer Product/Process Change<br>Notifcation (CPCN) procedure SNW-SQ-650A.|



## **Notes** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

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Philips Semiconductors 

40 V low VCEsat PNP transistor 

PBSS5140U 

## **NOTES** 

2001 Jul 20 

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Philips Semiconductors 

40 V low VCEsat PNP transistor 

PBSS5140U 

## **NOTES** 

2001 Jul 20 

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Philips Semiconductors 

40 V low VCEsat PNP transistor 

PBSS5140U 

## **NOTES** 

2001 Jul 20 

11 

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© Philips Electronics N.V. 2001 

SCA 72 

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Printed in The Netherlands 

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Date of release: 2001 Jul 20 Document order number: 9397 750 08432 

613514/02/pp12