PBSS4350X,115

Bipolar (BJT) Single Transistor, NPN, 50 V, 3 A, 550 mW, SOT-89, Surface Mount

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: NEXPERIA
Product type:
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:-; Power Dissipation Pd:550mW; DC Collector Current:3A; DC Current Gain hFE:300hFE; Transistor Case Style:
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 550mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: -
Transistor Case Style: SOT-89
DC Current Gain hFE Min: 300hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 3A
Collector Emitter Voltage Max: 50V

Delivery and price
Units per pack	500
Price	0.191 €
Current stock	10+
Lead time	30 days

Datasheet

## **Important notice** 

Dear Customer, 

On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets 

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. 

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** 

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) 

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: 

- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved 

Should be replaced with: 

- **© Nexperia B.V. (year). All rights reserved** . 

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, 

Kind regards, 

Team Nexperia 

## **DISCRETE SEMICONDUCTORS** 

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DATA SHEET<br>book, halfpage<br>M3D109<br>**----- End of picture text -----**<br>


**PBSS4350X** 50 V, 3 A NPN low V CEsat (BISS) transistor 

Supersedes data of 2003 Nov 21 

2004 Nov 04 

**Philips Semiconductors** 

**PBSS4350X** 

## **50 V, 3 A NPN low VCEsat (BISS) transistor** 

## **FEATURES** 

- SOT89 (SC-62) package 

- Low collector-emitter saturation voltage VCEsat 

- High collector current capability: IC and ICM 

- Higher efficiency leading to less heat generation 

- Reduced printed-circuit board requirements. 

## **APPLICATIONS** 

- Power management 

- DC/DC converters 

- Supply line switching 

- Battery charger 

## **QUICK REFERENCE DATA** 

|**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**|
|---|---|---|---|
|VCEO|collector-emitter voltage|50|V|
|IC|collector current (DC)|3|A|
|ICM|peak collector current|5|A|
|RCEsat|equivalent on-resistance|130|mΩ|



## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|emitter|
|2|collector|
|3|base|



- LCD backlighting. 

- Peripheral drivers 

- Driver in low supply voltage applications (e.g. lamps and LEDs). 

- Inductive load driver (e.g. relays, buzzers and motors). 

## **DESCRIPTION** 

NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5350X. 

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2<br>3<br>1<br>sym042<br>3 2 1<br>**----- End of picture text -----**<br>


## **MARKING** 

|**MARKING**||
|---|---|
|**TYPE NUMBER**|**MARKING CODE**|
|PBSS4350X|S43|



Fig.1  Simplified outline (SOT89) and symbol. 

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Philips Semiconductors 

## 50 V, 3 A NPN low VCEsat (BISS) transistor 

## PBSS4350X 

## **ORDERING INFORMATION** 

|**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**|
|---|---|---|---|
||**NAME**|**DESCRIPTION**|**VERSION**|
|PBSS4350X|SC-62|plastic surface mounted package; collector pad for good heat<br>transfer; 3 leads|SOT89|



## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter|−|50|V|
|VCEO|collector-emitter voltage|open base|−|50|V|
|VEBO|emitter-base voltage|open collector|−|5|V|
|IC|collector current (DC)|note 4|−|3|A|
|ICM|peak collector current|limited by Tj(max)|−|5|A|
|IB|base current (DC)||−|0.5|A|
|Ptot|total power dissipation|Tamb≤25°C<br>note 1<br>note 2<br>note 3<br>note 4|−<br>−<br>−<br>−|550<br>1<br>1.4<br>1.6|mW<br>W<br>W<br>W|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|ambient temperature||−65|+150|°C|



## **Notes** 

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm[2] . 

3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm[2] . 

4. Device mounted on a ceramic printed-circuit board 7 cm[2] , single-sided copper, tin-plated. 

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Philips Semiconductors 

## 50 V, 3 A NPN low VCEsat (BISS) transistor 

## PBSS4350X 

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MLE186<br>2<br>handbook, halfpage<br>Ptot<br>(W)<br>(1)<br>1.6<br>(2)<br>1.2<br>(3)<br>0.8<br>(4)<br>0.4<br>0<br>0 40 80 120 160<br>Tamb (°C)<br>(1) Ceramic PCB; 7 cm [2] (3) FR4 PCB; 1 cm [2]  copper<br>mounting pad for collector. mounting pad for collector.<br>(2) FR4 PCB; 6 cm [2]  copper (4) Standard footprint.<br>mounting pad for collector.<br>Fig.2  Power derating curves.<br>**----- End of picture text -----**<br>


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Philips Semiconductors 

## 50 V, 3 A NPN low VCEsat (BISS) transistor 

## PBSS4350X 

## **THERMAL CHARACTERISTICS** 

|**THERMAL**|**CHARACTERISTICS**||||
|---|---|---|---|---|
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|Rth(j-a)|thermal resistance from junction to ambient|in free air<br>note 1<br>note 2<br>note 3<br>note 4|225<br>125<br>90<br>80|K/W<br>K/W<br>K/W<br>K/W|
|Rth(j-s)|thermal resistance from junction to soldering point||16|K/W|



## **Notes** 

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm[2] . 

3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm[2] . 

4. Device mounted on a ceramic printed-circuit board 7 cm[2] , single-sided copper, tin-plated. 

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006aaa243<br>10 [3]<br>Zth<br>(K/W) (1)<br>(2)<br>10 [2] (3)<br>(4)<br>(5)<br>(6)<br>(7)<br>10<br>(8)<br>(9)<br>1 (10)<br>10 [−][1]<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>Mounted on FR4 printed-circuit board; standard footprint.<br>(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.<br>(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.<br>**----- End of picture text -----**<br>


Fig.3  Transient thermal impedance as a function of pulse time; typical values. 

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Philips Semiconductors 

## 50 V, 3 A NPN low VCEsat (BISS) transistor 

## PBSS4350X 

**==> picture [483 x 247] intentionally omitted <==**

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006aaa244<br>10 [3]<br>Zth<br>(K/W)<br>(1)<br>10 [2]<br>(2)<br>(3)<br>(4)<br>(5)<br>(6)<br>10<br>(7)<br>(8)<br>(9)<br>1 (10)<br>10 [−][1]<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm [2] .<br>(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.<br>(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.<br>**----- End of picture text -----**<br>


Fig.4  Transient thermal impedance as a function of pulse time; typical values. 

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006aaa245<br>10 [3]<br>Zth<br>(K/W)<br>10 [2] (1)<br>(2)<br>(3)<br>(4)<br>(5)<br>10 (6)<br>(7)<br>(8)<br>(9)<br>1<br>(10)<br>10 [−][1]<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm [2] .<br>(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.<br>(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.<br>**----- End of picture text -----**<br>


Fig.5  Transient thermal impedance as a function of pulse time; typical values. 

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Philips Semiconductors 

## 50 V, 3 A NPN low VCEsat (BISS) transistor 

## PBSS4350X 

## **CHARACTERISTICS** 

Tamb = 25 ° 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|---|
|ICBO|collector-base cut-off current|VCB= 50 V; IE= 0 A|−|−|100|nA|
|||VCB= 50 V; IE= 0 A; Tj= 150°C|−|−|50|µA|
|ICES|collector-emitter cut-off current|VCE= 50 V; VBE= 0 V|−|−|100|nA|
|IEBO|emitter-base cut-off current|VEB= 5 V; IC= 0 A|−|−|100|nA|
|hFE|DC current gain|VCE= 2 V<br>IC= 0.1 A<br>IC= 0.5 A<br>IC= 1 A; note 1<br>IC= 2 A; note 1<br>IC= 3 A; note 1|300<br>300<br>300<br>200<br>100|−<br>−<br>−<br>−<br>−|−<br>−<br>700<br>−<br>−||
|VCEsat|collector-emitter saturation<br>voltage|IC= 0.5 A; IB= 50 mA|−|−|80|mV|
|||IC= 1 A; IB= 50 mA|−|−|160|mV|
|||IC= 2 A; IB= 100 mA|−|−|280|mV|
|||IC= 2 A; IB= 200 mA; note 1|−|−|260|mV|
|||IC= 3 A; IB= 300 mA; note 1|−|−|370|mV|
|RCEsat|equivalent on-resistance|IC= 2 A; IB= 200 mA; note 1|−|100|130|mΩ|
|VBEsat|base-emitter saturation voltage|IC= 2 A; IB= 100 mA|−|−|1.1|V|
|||IC= 3 A; IB= 300 mA; note 1|−|−|1.2|V|
|VBEon|base-emitter turn-on voltage|VCE= 2 V; IC= 1 A|1.1|−|−|V|
|fT|transition frequency|IC= 100 mA; VCE= 5 V; f = 100 MHz|100|−|−|MHz|
|Cc|collector capacitance|VCB= 10 V; IE= ie= 0 A; f = 1 MHz|−|−|25|pF|



## **Note** 

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

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## 50 V, 3 A NPN low VCEsat (BISS) transistor 

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MLE181<br>800<br>handbook, halfpage<br>hFE<br>(1)<br>600<br>(2)<br>400<br>(3)<br>200<br>0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>VCE = 2 V.<br>(1) Tamb = 100 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>**----- End of picture text -----**<br>


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Fig.6 DC current gain as a function of collector<br>current; typical values.<br>**----- End of picture text -----**<br>


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MLE183<br>1<br>handbook, halfpage<br>VCEsat<br>(V)<br>10 [−][1]<br>(1)<br>(2)<br>(3)<br>10 [−][2]<br>10 [−][3]<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>IC/IB = 20.<br>(1) Tamb = 100 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.8 Collector-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br>


## PBSS4350X 

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**----- Start of picture text -----**<br>
MLE180<br>1.2<br>handbook, halfpage<br>VBE<br>(V)<br>(1)<br>0.8<br>(2)<br>(3)<br>0.4<br>0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br>


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VCE = 2 V.<br>(1) Tamb = −55 °C.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(2) Tamb = 25 °C.<br>**----- End of picture text -----**<br>


- (3) Tamb = 100 °C. 

Fig.7 Base-emitter voltage as a function of collector current; typical values. 

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MLE184<br>1<br>handbook, halfpage<br>VCEsat<br>(V)<br>10 [−][1]<br>(1)<br>(2)<br>10 [−][2]<br>(3)<br>10 [−][3]<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>Tamb = 25 °C.<br>(1) IC/IB = 100.<br>(2) IC/IB = 50.<br>(3) IC/IB = 10.<br>**----- End of picture text -----**<br>


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Fig.9 Collector-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br>


2004 Nov 04 

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Philips Semiconductors 

## 50 V, 3 A NPN low VCEsat (BISS) transistor 

**==> picture [241 x 230] intentionally omitted <==**

**----- Start of picture text -----**<br>
MLE185<br>1.4<br>handbook, halfpage<br>VBEsat<br>(V)<br>1<br>(1)<br>(2)<br>(3)<br>0.6<br>0.2<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>IC/IB = 20.<br>(1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.<br>**----- End of picture text -----**<br>


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Fig.10 Base-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br>


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MLE178<br>1200<br>handbook, halfpage<br>IC (1)<br>(mA) (2)<br>(3)<br>800<br>(4)<br>(5)<br>(6)<br>(7)<br>400 (8)<br>(9)<br>(10)<br>0<br>0 0.4 0.8 1.2 1.6 2<br>VCE (V)<br>Tamb = 25 °C.<br>(1) IB = 2600 µA. (5) IB = 1560 µA. (9) IB = 520 µA.<br>(2) IB = 2340 µA. (6) IB = 1300 µA. (10) IB = 260 µA.<br>(3) IB = 2080 µA. (7) IB = 1040 µA.<br>(4) IB = 1820 µA. (8) IB = 780 µA.<br>**----- End of picture text -----**<br>


Fig.12 Collector current as a function of collector-emitter voltage; typical values. 

## PBSS4350X 

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**----- Start of picture text -----**<br>
MLE182<br>10 [3]<br>handbook, halfpage<br>RCEsat<br>(Ω)<br>10 [2]<br>10<br>1<br>(1)<br>10 [−][1]<br>(2) (3)<br>10 [−][2]<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC/IB = 20.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.<br>Fig.11 Equivalent on-resistance as a function of<br>collector current; typical values.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
MLE179<br>5<br>handbook, halfpage (6) (5) (4) (3) (2) (1)<br>IC<br>(A)<br>4<br>(7)<br>(8)<br>3<br>(9)<br>(10)<br>2<br>1<br>0<br>0 0.4 0.8 1.2 1.6 2<br>VCE (V)<br>Tamb = 25 °C.<br>(1) IB = 120 mA. (5) IB = 72 mA. (9) IB = 24 mA.<br>(2) IB = 108 mA. (6) IB = 60 mA. (10) IB = 12 mA.<br>(3) IB = 96 mA. (7) IB = 48 mA.<br>(4) IB = 84 mA. (8) IB = 36 mA.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig.13 Collector current as a function of<br>collector-emitter voltage; typical values.<br>**----- End of picture text -----**<br>


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Philips Semiconductors 

## 50 V, 3 A NPN low VCEsat (BISS) transistor 

## PBSS4350X 

## **PACKAGE OUTLINE** 

**Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89** 

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D B<br>A<br>bp3<br>E<br>HE<br>Lp<br>1 2 3<br>bp2 c<br>w M bp1<br>e1<br>e<br>0 2 4 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w<br>1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2<br>mm 3.0 1.5 0.13<br>1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>99-09-13<br> SOT89 TO-243 SC-62<br>04-08-03<br>**----- End of picture text -----**<br>


2004 Nov 04 

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Philips Semiconductors 

## 50 V, 3 A NPN low VCEsat (BISS) transistor 

## PBSS4350X 

## **DATA SHEET STATUS** 

|**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**|
|---|---|---|---|
|I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.|
|II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.|
|III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).|



## **Notes** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

2004 Nov 04 

11 

## **Philips Semiconductors – a worldwide company** 

## **Contact information** 

For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . 

© Koninklijke Philips Electronics N.V. 2004 

SCA76 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

**==> picture [214 x 95] intentionally omitted <==**

Printed in The Netherlands 

R75/03/pp12 Date of release: 2004 Nov 04 Document order number: 9397 750 13883

Updated at June 1, 2026

Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.

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Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

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