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PBSS4320T,215
Bipolar (BJT) Single Transistor, NPN, 20 V, 2 A, 300 mW, SOT-23, Surface Mount
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- Manufacturer: NEXPERIA
- Product type:
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:-; Power Dissipation Pd:300mW; DC Collector Current:2A; DC Current Gain hFE:220hFE; Transistor Case Style:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: -
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 220hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 2A
- Collector Emitter Voltage Max: 20V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.151 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **DISCRETE SEMICONDUCTORS** **DATA SHEET** **==> picture [206 x 201] intentionally omitted <==** **PBSS4320T** 20 V NPN low VCEsat transistor 2004 Mar 18 Supersedes data of 2002 Aug 08 **Philips Semiconductors** **PBSS4320T** ## **20 V NPN low VCEsat transistor** ## **FEATURES** - Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat - High collector current capability - High collector current gain - Improved efficiency due to reduced heat generation. ## **QUICK REFERENCE DATA** |**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**| |---|---|---|---| |VCEO|collector-emitter voltage|20|V| |IC|collector current (DC)|2|A| |ICRP|repetitive peak collector<br>current|3|A| |RCEsat|equivalent on-resistance|105|mΩ| ## **APPLICATIONS** - Power management applications - Low and medium power DC/DC convertors - Supply line switching - Battery chargers - Linear voltage regulation with low voltage drop-out (LDO). ## **PINNING** |**PINNING**|| |---|---| |**PIN**|**DESCRIPTION**| |1|base| |2|emitter| |3|collector| ## **DESCRIPTION** NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. ## **MARKING** |**MARKING**|| |---|---| |**TYPE NUMBER**|**MARKING CODE**(1)| |PBSS4320T|ZG*| ## **Note** **==> picture [242 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage 3<br>3<br>1<br>2<br>1 2<br>Top view MAM255<br>**----- End of picture text -----**<br> 1. * = p: Made in Hong Kong. - = t: Made in Malaysia. - = W: Made in China. Fig.1 Simplified outline (SOT23) and symbol. ## **ORDERING INFORMATION** |**TYPE**<br>**NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**| |---|---|---|---| ||**NAME**|**DESCRIPTION**|**VERSION**| |PBSS4320T|−|plastic surface mounted package; 3 leads|SOT23| 2004 Mar 18 2 Philips Semiconductors ## 20 V NPN low VCEsat transistor ## PBSS4320T ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VCBO|collector-base voltage|open emitter|−|20|V| |VCEO|collector-emitter voltage|open base|−|20|V| |VEBO|emitter-base voltage|open collector|−|5|V| |IC|collector current (DC)||−|2|A| |ICRP|repetitive peak collector current|note 1|−|3|A| |ICM|peak collector current|single peak|−|5|A| |IB|base current (DC)||−|0.5|A| |Ptot|total power dissipation|Tamb≤25°C; note 2|−|300|mW| |||Tamb≤25°C; note 3|−|480|mW| |||Tamb≤25°C; note 4|−|540|mW| |||Tamb≤25°C; notes 1 and 2|−|1.2|W| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||−|150|°C| |Tamb|operating ambient temperature||−65|+150|°C| ## **Notes** 1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm[2] . 4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm[2] . ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth(j-a)|thermal resistance from junction to<br>ambient|in free air; note 1|417|K/W| |||in free air; note 2|260|K/W| |||in free air; note 3|230|K/W| |||in free air; notes 1 and 4|104|K/W| ## **Notes** 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm[2] . 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm[2] . 4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. 2004 Mar 18 3 Philips Semiconductors ## 20 V NPN low VCEsat transistor ## PBSS4320T ## **CHARACTERISTICS** Tamb = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---|---| |ICBO|collector-base cut-off current|IE= 0 A; VCB= 20 V|−|−|100|nA| |||IE= 0 A; VCB= 20 V; Tj= 150°C|−|−|50|µA| |IEBO|emitter-base cut-off current|IC= 0 A; VEB= 5 V|−|−|100|nA| |hFE|DC current gain|IC= 100 mA; VCE= 2 V|220|−|−|| |||IC= 500 mA; VCE= 2 V|220|−|−|| |||IC= 1 A; VCE= 2 V; note 1|220|−|−|| |||IC= 2 A; VCE= 2 V; note 1|200|−|−|| |||IC= 3 A; VCE= 2 V; note 1|150|−|−|| |VCEsat|collector-emitter saturation<br>voltage|IC= 500 mA; IB= 50 mA|−|−|70|mV| |||IC= 1 A; IB= 50 mA|−|−|120|mV| |||IC= 2 A; IB= 40 mA; note 1|−|−|230|mV| |||IC= 2 A; IB= 200 mA; note 1|−|−|210|mV| |||IC= 3 A; IB= 300 mA; note 1|−|−|310|mV| |RCEsat|equivalent on-resistance|IC= 2 A; IB= 200 mA; note 1|−|80|105|mΩ| |VBEsat|base-emitter saturation<br>voltage|IC= 2 A; IB= 40 mA; note 1|−|−|1.1|V| |||IC= 3 A; IB= 300 mA; note 1|−|−|1.2|V| |VBEon|base-emitter turn-on voltage|IC= 1 A; VCE= 2 V; note 1|1.2|−|−|V| |fT|transition frequency|IC= 100 mA; VCE= 5 V;<br>f = 100 MHz|100|−|−|MHz| |Cc|collector capacitance|IE= Ie= 0 A; VCB= 10 V; f = 1 MHz|−|−|35|pF| ## **Note** 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Mar 18 4 Philips Semiconductors ## 20 V NPN low VCEsat transistor **==> picture [241 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD849<br>800<br>handbook, halfpage<br>hFE<br>600<br>(1)<br>400<br>(2)<br>200 (3)<br>0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [33 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> VCE = 2 V.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. **==> picture [203 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.2 DC current gain as a function of collector<br>current; typical values.<br>**----- End of picture text -----**<br> **==> picture [241 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD851<br>1400<br>handbook, halfpage<br>VBEsat<br>(mV)<br>1000<br>(1)<br>(2)<br>(3)<br>600<br>200<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [32 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> IC/IB = 10.<br>**----- End of picture text -----**<br> - (1) Tamb = −55 °C. - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.4 Base-emitter saturation voltage as a function of collector current; typical values. ## PBSS4320T **==> picture [242 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD850<br>1200<br>handbook, halfpage<br>VBE<br>(mV)<br>(1)<br>800<br>(2)<br>(3)<br>400<br>0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [34 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> VCE = 2 V.<br>**----- End of picture text -----**<br> **==> picture [62 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> (1) Tamb = −55 °C.<br>**----- End of picture text -----**<br> **==> picture [58 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> (2) Tamb = 25 °C.<br>**----- End of picture text -----**<br> - (3) Tamb = 150 °C. Fig.3 Base-emitter voltage as a function of collector current; typical values. **==> picture [242 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD852<br>1400<br>handbook, halfpage<br>VBEsat<br>(mV)<br>1000<br>(1)<br>(2)<br>600 (3)<br>200<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [33 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> IC/IB = 20.<br>**----- End of picture text -----**<br> **==> picture [62 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> (1) Tamb = −55 °C.<br>**----- End of picture text -----**<br> - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 18 5 Philips Semiconductors ## 20 V NPN low VCEsat transistor **==> picture [242 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> MLD853<br>10 [3]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>10 [2]<br>(1)<br>(2)<br>10<br>(3)<br>1<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>IC/IB = 10.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. - Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. **==> picture [242 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> MLD855<br>10 [3]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>10 [2]<br>(1)<br>(2)<br>10 (3)<br>1<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>IC/IB = 50.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. **==> picture [210 x 53] intentionally omitted <==** **----- Start of picture text -----**<br> (2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.8 Collector-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> ## PBSS4320T **==> picture [242 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> MLD854<br>10 [3]<br>handbook, halfpage<br>VCEsat<br>(mV) (1)<br>(2)<br>10 [2]<br>(3)<br>10<br>1<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>IC/IB = 20.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. **==> picture [242 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> MLD856<br>10 [3]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>10 [2]<br>(1)<br>(3) (2)<br>10<br>1<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [37 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> IC/IB = 100.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 18 6 Philips Semiconductors PBSS4320T ## 20 V NPN low VCEsat transistor **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MLD857<br>10 [2]<br>handbook, halfpage<br>RCEsat<br>(Ω)<br>10<br>1<br>(1)<br>(2)<br>10 [−][1]<br>(3)<br>10 [−][2]<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mΑ)<br>IC/IB = 20.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.10 Equivalent on-resistance as a function of<br>collector current; typical values.<br>**----- End of picture text -----**<br> 2004 Mar 18 7 Philips Semiconductors ## 20 V NPN low VCEsat transistor ## PBSS4320T ## **PACKAGE OUTLINE** **==> picture [480 x 585] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface mounted package; 3 leads SOT23<br>D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br>97-02-28<br> SOT23 TO-236AB<br>99-09-13<br>**----- End of picture text -----**<br> 2004 Mar 18 8 Philips Semiconductors ## 20 V NPN low VCEsat transistor ## PBSS4320T ## **DATA SHEET STATUS** |**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**| |---|---|---|---| |I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.| |II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.| |III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).| ## **Notes** 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. ## **DEFINITIONS** **Short-form specification** The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. **Limiting values definition** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ## **DISCLAIMERS** **Life support applications** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes** Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Mar 18 9 ## **Philips Semiconductors – a worldwide company** ## **Contact information** For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **==> picture [214 x 95] intentionally omitted <==** Printed in The Netherlands R75/02/pp10 Date of release: 2004 Mar 18 Document order number: 9397 750 12436
Updated at June 1, 2026
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