PBSS4260PANPSX

Bipolar Transistor Array, NPN, PNP, 60 V, 60 V, 2 A, 2 A, 510 mW

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Manufacturer: NEXPERIA
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:510mW; DC Collector Current:2A; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-111
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: AEC-Q101
Transistor Mounting: Surface Mount
Transistor Polarity: NPN, PNP
Power Dissipation NPN: 510mW
Power Dissipation PNP: 510mW
Transistor Case Style: SOT-1118
Transition Frequency NPN: 140MHz
Transition Frequency PNP: 100MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 50hFE
DC Current Gain hFE Min PNP: 50hFE
Continuous Collector Current NPN: 2A
Continuous Collector Current PNP: 2A
Collector Emitter Voltage Max NPN: 60V
Collector Emitter Voltage Max PNP: 60V

Delivery and price
Units per pack	5000
Price	0.361 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 17, 2026