PBSS4160PANSX

Bipolar Transistor Array, Dual NPN, 60 V, 1 A, 510 mW

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Manufacturer: NEXPERIA
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:510mW; DC Collector Current:1A; DC Current Gain hFE:70hFE; Transistor Case Style:SOT-11
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: AEC-Q101
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Power Dissipation NPN: 510mW
Power Dissipation PNP: -
Transistor Case Style: SOT-1118
Transition Frequency NPN: 175MHz
Transition Frequency PNP: -
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 70hFE
DC Current Gain hFE Min PNP: -
Continuous Collector Current NPN: 1A
Continuous Collector Current PNP: -
Collector Emitter Voltage Max NPN: 60V
Collector Emitter Voltage Max PNP: -

Delivery and price
Units per pack	5000
Price	0.201 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 17, 2026