PBSS4160DS,115

Bipolar Transistor Array, Dual NPN, 60 V, 1 A, 420 mW

⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.

Manufacturer: NEXPERIA
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:420mW; DC Collector Current:1A; DC Current Gain hFE:500hFE; Transistor Case Style:SOT-457; No. of Pin
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Power Dissipation NPN: 420mW
Power Dissipation PNP: -
Transistor Case Style: SOT-457
Transition Frequency NPN: 220MHz
Transition Frequency PNP: -
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 500hFE
DC Current Gain hFE Min PNP: -
Continuous Collector Current NPN: 1A
Continuous Collector Current PNP: -
Collector Emitter Voltage Max NPN: 60V
Collector Emitter Voltage Max PNP: -

Delivery and price
Units per pack	5000
Price	0.134 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 17, 2026