Illustrative purposes only
PBSS4112PANP,115
Bipolar Transistor Array, NPN, PNP, 120 V, 1 A, 510 mW, 30 hFE, DFN2020
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 30hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- DC Collector Current: 1A
- Power Dissipation Pd: 510mW
- Power Dissipation NPN: 510mW
- Power Dissipation PNP: 510mW
- Transistor Case Style: DFN2020
- Transition Frequency NPN: 120MHz
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 30hFE
- DC Current Gain hFE Min PNP: 30hFE
- Continuous Collector Current NPN: 1A
- Continuous Collector Current PNP: 1A
- Collector Emitter Voltage Max NPN: 120V
- Collector Emitter Voltage Max PNP: 120V
- Collector Emitter Voltage V(br)ceo: 120V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.16 € |
| Current stock | 2749 |
| Lead time | 7 days |