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PBSS4041SPN,115 — Bipolar Transistor Array, NPN, PNP, 60 V, 6.7 A, 2.3 W, 300 hFE, SOIC
Illustrative purposes only

PBSS4041SPN,115

Bipolar Transistor Array, NPN, PNP, 60 V, 6.7 A, 2.3 W, 300 hFE, SOIC

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • No. of Pins: 8Pins
  • DC Current Gain hFE: 300hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: NPN, PNP
  • DC Collector Current: 6.7A
  • Power Dissipation Pd: 2.3W
  • Power Dissipation NPN: 2.3W
  • Power Dissipation PNP: 2.3W
  • Transistor Case Style: SOIC
  • Transition Frequency NPN: 130MHz
  • Transition Frequency PNP: 110MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 300hFE
  • DC Current Gain hFE Min PNP: 300hFE
  • Continuous Collector Current NPN: 6.7A
  • Continuous Collector Current PNP: 6.7A
  • Collector Emitter Voltage Max NPN: 60V
  • Collector Emitter Voltage Max PNP: 60V
  • Collector Emitter Voltage V(br)ceo: 60V
Delivery and price
Units per pack 5000
Price 0.362 €
Current stock 10+
Lead time 30 days

Updated at February 9, 2023