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PBSS2540M,315
Bipolar (BJT) Single Transistor, NPN, 40 V, 500 mA, 430 mW, DFN1006, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NEXPERIA
- Product type:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 430mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 450MHz
- Transistor Case Style: DFN1006
- DC Current Gain hFE Min: 50hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 40V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.085 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DISCRETE SEMICONDUCTORS** **DATA SHEET** **==> picture [206 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> M3D883<br>BOTTOM VIEW<br>**----- End of picture text -----**<br> **PBSS2540M** 40 V, 0.5 A NPN low V CEsat (BISS) transistor 2003 Jul 22 **Philips Semiconductors** **PBSS2540M** ## **40 V, 0.5 A NPN low VCEsat (BISS) transistor** ## **FEATURES** - Low collector-emitter saturation voltage VCEsat - High collector current capability IC and ICM - High efficiency leading to reduced heat generation - Reduced printed-circuit board requirements. ## **QUICK REFERENCE DATA** |**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**| |---|---|---|---| |VCEO|collector-emitter voltage|40|V| |IC|collector current (DC)|500|mA| |ICM|peak collector current|1|A| |RCEsat|equivalent on-resistance|<500|mΩ| ## **APPLICATIONS** - Power management: - DC-DC converter - Supply line switching - Battery charger - LCD backlighting. ## **PINNING** |**PINNING**|| |---|---| |**PIN**|**DESCRIPTION**| |1|base| |2|emitter| |3|collector| - Peripheral driver: - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load drivers (e.g. relays, buzzers and motors). ## **DESCRIPTION** Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. **==> picture [241 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>handbook, halfpage<br>2<br>3 1<br>1<br>2<br>Bottom view MAM475<br>**----- End of picture text -----**<br> ## **MARKING** |**MARKING**|| |---|---| |**TYPE NUMBER**|**MARKING CODE**| |PBSS2540M|DC| **==> picture [196 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.1 Simplified outline (SOT883) and symbol.<br>**----- End of picture text -----**<br> 2003 Jul 22 2 Philips Semiconductors PBSS2540M ## 40 V, 0.5 A NPN low VCEsat (BISS) transistor ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VCBO|collector-base voltage|open emitter|−|40|V| |VCEO|collector-emitter voltage|open base|−|40|V| |VEBO|emitter-base voltage|open collector|−|6|V| |IC|collector current (DC)|notes 1 and 2|−|500|mA| |ICM|peak collector current||−|1|A| |IBM|peak base current||−|100|mA| |Ptot|total power dissipation|Tamb≤25°C; notes 1 and 2|−|250|mW| |||Tamb≤25°C; note 1 and 3|−|430|mW| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||−|150|°C| |Tamb|operating ambient temperature||−65|+150|°C| ## **Notes** 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm[2] . ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth j-a|thermal resistance from junction to<br>ambient|in free air; notes 1 and 2|500|K/W| |||in free air; notes 1, 3 and 4|290|K/W| ## **Notes** 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm[2] . 4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms. ## **Soldering** Reflow soldering is the only recommended soldering method. 2003 Jul 22 3 Philips Semiconductors ## 40 V, 0.5 A NPN low VCEsat (BISS) transistor ## PBSS2540M ## **CHARACTERISTICS** Tamb = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---|---| |ICBO|collector-base cut-off current|VCB= 30 V; IE= 0|−|−|100|nA| |||VCB= 30 V; IE= 0; Tj= 150°C|−|−|50|µA| |IEBO|emitter-base cut-off current|VEB= 5 V; IC= 0|−|−|100|nA| |hFE|DC current gain|VCE= 2 V; IC= 10 mA|200|−|−|| |||VCE= 2 V; IC= 100 mA; note 1|150|−|−|| |||VCE= 2 V; IC= 500 mA; note 1|50|−|−|| |VCEsat|collector-emitter saturation voltage|IC= 10 mA; IB= 0.5 mA|−|−|50|mV| |||IC= 100 mA; IB= 5 mA|−|−|100|mV| |||IC= 200 mA; IB= 10 mA; note 1|−|−|200|mV| |||IC= 500 mA; IB= 50 mA; note 1|−|−|250|mV| |RCEsat|equivalent on-resistance|IC= 500 mA; IB= 50 mA; note 1|−|380|<500|mΩ| |VBEsat|base-emitter saturation voltage|IC= 500 mA; IB= 50 mA; note 1|−|−|1.2|V| |VBEon|base-emitter turn-on voltage|VCE= 2 V; IC= 100 mA; note 1|−|−|1.1|V| |fT|transition frequency|IC= 100 mA; VCE= 5 V;<br>f = 100 MHz|250|450|−|MHz| |Cc|collector capacitance|VCB= 10 V; IE= Ie= 0; f = 1 MHz|−|−|6|pF| ## **Note** 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Jul 22 4 Philips Semiconductors ## 40 V, 0.5 A NPN low VCEsat (BISS) transistor **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MHC082<br>1200<br>handbook, halfpage<br>hFE<br>1000<br>(1)<br>800<br>600<br>(2)<br>400<br>(3)<br>200<br>0<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>VCE = 2 V.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.2 DC current gain as a function of collector<br>current; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MHC086<br>10 [3]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>10 [2]<br>(1)<br>(2)<br>(3)<br>10<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>IC/IB = 20.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.4 Collector-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> ## PBSS2540M **==> picture [241 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> MHC085<br>1200<br>handbook, halfpage<br>VBE<br>(mV)<br>1000<br>800 (1)<br>(2)<br>600<br>400<br>(3)<br>200<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>VCE = 2 V.<br>(1) Tamb = −55 °C.<br>(2) Tamb = 25 °C.<br>**----- End of picture text -----**<br> - (3) Tamb = 150 °C. **==> picture [186 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.3 Base-emitter voltage as a function of<br>collector current; typical values.<br>**----- End of picture text -----**<br> **==> picture [241 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> MHC084<br>1200<br>handbook, halfpage<br>VBEsat<br>(mV)<br>1000<br>(1)<br>800<br>(2)<br>600<br>400 (3)<br>200<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>IC/IB = 20.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>**----- End of picture text -----**<br> - (3) Tamb = −55 °C. **==> picture [211 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.5 Base-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> 2003 Jul 22 5 Philips Semiconductors ## 40 V, 0.5 A NPN low VCEsat (BISS) transistor **==> picture [242 x 320] intentionally omitted <==** **----- Start of picture text -----**<br> MHC083<br>1200<br>handbook, halfpageIC<br>(mA)<br>(1)<br>1000<br>(2)<br>(3)<br>(4)<br>(5)<br>800 (6)<br>(7)<br>(8)<br>600 (9)<br>(10)<br>400<br>200<br>0<br>0 1 2 3 4 5<br>VCE (V)<br>Tamb = 25 °C.<br>(1) IB = 25 mA. (5) IB = 15 mA. (9) IB = 5 mA.<br>(2) IB = 22.5 mA. (6) IB = 12.5 mA. (10) IB = 2.5 mA.<br>(3) IB = 20 mA. (7) IB = 10 mA.<br>(4) IB = 17.5 mA. (8) IB = 7.5 mA.<br>Fig.6 Collector current as a function of<br>collector-emitter voltage; typical values.<br>**----- End of picture text -----**<br> ## PBSS2540M **==> picture [242 x 320] intentionally omitted <==** **----- Start of picture text -----**<br> MHC087<br>10 [3]<br>handbook, halfpage<br>RCEsat<br>(Ω)<br>10 [2]<br>10<br>(1)<br>(2)<br>(3)<br>1<br>10 [−][1]<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>IC/IB = 20.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.7 Collector-emitter equivalent on-resistance<br>as a function of collector current; typical<br>values.<br>**----- End of picture text -----**<br> 2003 Jul 22 6 Philips Semiconductors ## 40 V, 0.5 A NPN low VCEsat (BISS) transistor ## PBSS2540M ## **PACKAGE OUTLINE** **Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm** **==> picture [36 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SOT883<br>**----- End of picture text -----**<br> **==> picture [495 x 590] intentionally omitted <==** **----- Start of picture text -----**<br> L L1<br>2<br>b<br>3<br>e b1<br>1<br>e1<br>A<br>A1<br>E<br>D<br>0 0.5 1 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A [(1)] max.A1 b b1 D E e e1 L L1<br>0.50 0.20 0.55 0.62 1.02 0.30 0.30<br>mm 0.03 0.35 0.65<br>0.46 0.12 0.47 0.55 0.95 0.22 0.22<br>Note<br>1. Including plating thickness<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION PROJECTION<br> IEC JEDEC JEITA<br>03-02-05<br> SOT883 SC-101<br>03-04-03<br>**----- End of picture text -----**<br> 2003 Jul 22 7 Philips Semiconductors ## 40 V, 0.5 A NPN low VCEsat (BISS) transistor ## PBSS2540M ## **DATA SHEET STATUS** |**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**| |---|---|---|---| |I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.| |II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.| |III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).| ## **Notes** 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. ## **DEFINITIONS** **Short-form specification** The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. **Limiting values definition** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ## **DISCLAIMERS** **Life support applications** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes** Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Jul 22 8 ## **Philips Semiconductors – a worldwide company** ## **Contact information** For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **==> picture [214 x 95] intentionally omitted <==** Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Jul 22 Document order number: 9397 750 11559
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