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PBSS2515YPN,115
Bipolar Transistor Array, NPN, PNP, 15 V, 15 V, 500 mA, 500 mA, 200 mW
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- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- Power Dissipation NPN: 200mW
- Power Dissipation PNP: 200mW
- Transistor Case Style: TSSOP
- Transition Frequency NPN: 420MHz
- Transition Frequency PNP: 280MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 90hFE
- DC Current Gain hFE Min PNP: 90hFE
- Continuous Collector Current NPN: 500mA
- Continuous Collector Current PNP: 500mA
- Collector Emitter Voltage Max NPN: 15V
- Collector Emitter Voltage Max PNP: 15V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.127 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DISCRETE SEMICONDUCTORS** **==> picture [359 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> DATA SHEET<br>book, halfpage<br>MBD128<br>**----- End of picture text -----**<br> ## **PBSS2515YPN** 15 V low V NPN/PNP CE(sat) transistor Supersedes data of 2002 May 08 2005 Jan 11 **Philips Semiconductors** **PBSS2515YPN** ## **15 V low V NPN/PNP transistor CE(sat)** ## **FEATURES** - Low collector-emitter saturation voltage - High current capability - Replaces two SC-70 packaged low VCEsat transistors on same PCB area - Reduces required PCB area - Reduced pick and place costs. ## **APPLICATION** - General purpose switching and muting - Low frequency driver circuits - LCD backlighting ## **QUICK REFERENCE DATA** |**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**| |---|---|---|---| |VCEO|collector-emitter voltage|15|V| |ICM|peak collector current|1|A| |RCEsat|equivalent on-resistance|<500|mΩ| ## **PINNING** |**PINNING**|| |---|---| |**PIN**|**DESCRIPTION**| |1, 4|emitter<br>TR1; TR2| |2, 5|base<br>TR1; TR2| |6, 3|collector<br>TR1; TR2| - Supply line switching circuits - Battery driven equipment (mobile phones, video cameras and hand-held devices). ## **DESCRIPTION** NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. **==> picture [242 x 91] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage 6 5 4 6 5 4<br>TR2<br>TR1<br>1 2 3 1 2 3<br>Top view MAM445<br>**----- End of picture text -----**<br> ## **MARKING** |**TYPE NUMBER**|**MARKING CODE**| |---|---| |PBSS2515YPN|N8*| Fig.1 Simplified outline SC-88 (SOT363) and symbol. ## **Note** 1. * = -: made in Hong Kong - = t: made in Malaysia - = W: made in China. ## **ORDERING INFORMATION** |**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**| |---|---|---|---| ||**NAME**|**DESCRIPTION**|**VERSION**| |PBSS2515YPN|SC-88|plastic surface mounted package; 6 leads|SOT363| 2005 Jan 11 2 Philips Semiconductors ## 15 V low V NPN/PNP transistor CE(sat) ## PBSS2515YPN ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |**Per transistor; for the PNP transistor with negative polarity**|||||| |VCBO|collector-base voltage|open emitter|−|15|V| |VCEO|collector-emitter voltage|open base|−|15|V| |VEBO|emitter-base voltage|open collector|−|6|V| |IC|collector current (DC)||−|500|mA| |ICM|peak collector current||−|1|A| |IBM|peak base current||−|100|mA| |Ptot|total power dissipation|Tamb≤25°C|−|200|mW| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||−|150|°C| |Tamb|operating ambient temperature||−65|+150|°C| |**Per device**|||||| |Ptot|total power dissipation|Tamb≤25°C; note 1|−|300|mW| ## **Note** 1. Transistor mounted on an FR4 printed-circuit board. ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth(j-a)|thermal resistance from junction to ambient|note 1|416|K/W| ## **Note** 1. Transistor mounted on an FR4 printed-circuit board. 2005 Jan 11 3 Philips Semiconductors ## 15 V low V NPN/PNP transistor CE(sat) ## PBSS2515YPN ## **CHARACTERISTICS** Tamb = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---|---| |**Per transistor; for the PNP transistor with negative polarity**||||||| |ICBO|collector-base cut-off current|VCB= 15 V; IE= 0 A|−|−|100|nA| |||VCB= 15 V; IE= 0 A; Tj= 150°C|−|−|50|µA| |IEBO|emitter-base cut-off current|VEB= 5 V; IC= 0 A|−|−|100|nA| |hFE|DC current gain|VCE= 2 V; IC= 10 mA|200|−|−|| |||VCE= 2 V; IC= 100 mA; note 1|150|−|−|| |||VCE= 2 V; IC= 500 mA; note 1|90|−|−|| |VCEsat|collector-emitter saturation<br>voltage|IC= 10 mA; IB= 0.5 mA|−|−|25|mV| |||IC= 200 mA; IB= 10 mA|−|−|150|mV| |||IC= 500 mA; IB= 50 mA; note 1|−|−|250|mV| |RCEsat|equivalent on-resistance|IC= 500 mA; IB= 50 mA; note 1|−|300|<500|mΩ| |VBEsat|base-emitter saturation voltage|IC= 500 mA; IB= 50 mA; note 1|−|−|1.1|V| |VBEon|base-emitter turn-on voltage|VCE= 2 V; IC= 100 mA; note 1|−|−|0.9|V| |**NPN transistor**||||||| |fT|transition frequency|IC= 100 mA; VCE= 5 V; f = 100 MHz|250|420|−|MHz| |Cc|collector capacitance|VCB= 10 V; IE= Ie= 0 A; f = 1 MHz|−|4.4|6|pF| |**PNP transistor**||||||| |fT|transition frequency|IC=−100 mA; VCE=−5 V;<br>f = 100 MHz|100|280|−|MHz| |Cc|collector capacitance|VCB=−10 V; IE= Ie= 0 A; f = 1 MHz|−|−|10|pF| ## **Note** 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2005 Jan 11 4 Philips Semiconductors ## 15 V low V NPN/PNP transistor CE(sat) **==> picture [241 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD687<br>600<br>handbook, halfpage<br>(1)<br>hFE<br>400<br>(2)<br>200<br>(3)<br>0<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **TR1 (NPN)** VCE = 2 V. - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.2 DC current gain as a function of collector current; typical values. **==> picture [241 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD691<br>10 [3]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>10 [2]<br>(1)<br>(2)<br>10<br>(3)<br>1<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [69 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> TR1 (NPN) IC/IB = 20.<br>**----- End of picture text -----**<br> **==> picture [61 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> (1) Tamb = 150 °C.<br>**----- End of picture text -----**<br> - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. **==> picture [210 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.4 Collector-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> ## PBSS2515YPN **==> picture [241 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> MLD689<br>1200<br>handbook, halfpage<br>VBE<br>(mV)<br>1000<br>(1)<br>800<br>(2)<br>600<br>(3)<br>400<br>200<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **TR1 (NPN)** VCE = 2 V. (1) Tamb = −55 °C. - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.3 Base-emitter voltage as a function of collector current; typical values. **==> picture [241 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> MLD690<br>1200<br>handbook, halfpage<br>VBEsat<br>(mV)<br>1000<br>(1)<br>800<br>(2)<br>600<br>(3)<br>400<br>200<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [70 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> TR1 (NPN) IC/IB = 20.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2005 Jan 11 5 Philips Semiconductors ## 15 V low V NPN/PNP transistor CE(sat) **==> picture [242 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD692<br>10 [2]<br>handbook, halfpage<br>RCEsat<br>(Ω)<br>10<br>(1)<br>(2)<br>(3)<br>1<br>10 [−][1]<br>10 [−][1] 1 10 10 [2] 10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## PBSS2515YPN **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MLD688<br>1200<br>handbook, halfpage<br>(4) (3) (2) (1)<br>IC<br>(mA)<br>800 (5)<br>(6)<br>(7)<br>(8)<br>400<br>(9)<br>(10)<br>0<br>0 2 4 6 8 10<br>VCE (V)<br>**----- End of picture text -----**<br> ## **TR1 (NPN)** Tamb = 25 °C. ## **TR1 (NPN)** IC/IB = 20. - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.6 Equivalent on-resistance as a function of collector current; typical values. (1) IB = 4.6 mA. (6) IB = 2.3 mA. (2) IB = 4.14 mA. (7) IB = 1.84 mA. - (3) IB = 3.68 mA. (8) IB = 1.38 mA. (4) IB = 3.22 mA. (9) IB = 0.92 mA. (5) IB = 2.76 mA. (10) IB = 0.46 mA. Fig.7 Collector current as a function of collector-emitter voltage; typical values. 2005 Jan 11 6 Philips Semiconductors ## 15 V low V NPN/PNP transistor CE(sat) **==> picture [241 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD693<br>600<br>handbook, halfpage<br>hFE (1)<br>400<br>(2)<br>200<br>(3)<br>0<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **TR2 (PNP)** VCE = −2 V. - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.8 DC current gain as a function of collector current; typical values. **==> picture [241 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD697<br>−10 [3]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>−10 [2]<br>(1)<br>(2)<br>(3)<br>−10<br>−1<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **TR2 (PNP)** IC/IB = 20. - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. ## PBSS2515YPN **==> picture [241 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> MLD695<br>−1200<br>handbook, halfpage<br>VBE<br>(mV)<br>−1000<br>(1)<br>−800<br>(2)<br>−600<br>(3)<br>−400<br>−200<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **TR2 (PNP)** VCE = −2 V. - (1) Tamb = −55 °C. - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.9 Base-emitter voltage as a function of collector current; typical values. **==> picture [241 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> MLD696<br>−1200<br>handbook, halfpage<br>VBEsat<br>(mV)<br>−1000<br>(1)<br>−800<br>(2)<br>−600<br>(3)<br>−400<br>−200<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> **TR2 (PNP)** IC/IB = 20. - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. - Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2005 Jan 11 7 Philips Semiconductors ## 15 V low V NPN/PNP transistor CE(sat) **==> picture [241 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MLD698<br>10 [3]<br>handbook, halfpage<br>RCEsat<br>(Ω)<br>10 [2]<br>10<br>1<br>(1)<br>(2) (3)<br>10 [−][1]<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## PBSS2515YPN **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MLD694<br>−1200<br>handbook, halfpage<br>IC (4) (3) (2) (1)<br>(mA)<br>−800 (5)<br>(6)<br>(7)<br>(8)<br>−400 (9)<br>(10)<br>0<br>0 −2 −4 −6 −8 −10<br>VCE (V)<br>**----- End of picture text -----**<br> ## **TR2 (PNP)** Tamb = 25 °C. **==> picture [68 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> TR2 (PNP) IC/IB = 20.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.12 Equivalent on-resistance as a function of collector current; typical values. (1) IB = −7 mA. (6) IB = −3.5 mA. (2) IB = −6.3 mA. (7) IB = −2.8 mA. (3) IB = −5.6 mA. (8) IB = −2.1 mA. (4) IB = −4.9 mA. (9) IB = −1.4 mA. (5) IB = −4.2 mA. (10) IB = −0.7 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2005 Jan 11 8 Philips Semiconductors ## 15 V low V NPN/PNP transistor CE(sat) ## PBSS2515YPN ## **PACKAGE OUTLINE** ## **Plastic surface mounted package; 6 leads** **==> picture [35 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>**----- End of picture text -----**<br> **==> picture [480 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A X<br>y HE v M A<br>6 5 4<br>Q<br>pin 1<br>index A<br>A1<br>1 2 3 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>A1<br>UNIT A max bp c D E e e1 HE Lp Q v w y<br>1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25<br>mm 0.1 1.3 0.65 0.2 0.2 0.1<br>0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>97-02-28<br> SOT363 SC-88<br>04-11-08<br>**----- End of picture text -----**<br> 2005 Jan 11 9 Philips Semiconductors ## 15 V low V NPN/PNP transistor CE(sat) ## PBSS2515YPN ## **DATA SHEET STATUS** |**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**| |---|---|---|---| |I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.| |II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.| |III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).| ## **Notes** 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. ## **DEFINITIONS** **Short-form specification** The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. **Limiting values definition** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ## **DISCLAIMERS** **Life support applications** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes** Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2005 Jan 11 10 ## **Philips Semiconductors – a worldwide company** ## **Contact information** For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . > © Koninklijke Philips Electronics N.V. 2005 SCA77 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **==> picture [214 x 95] intentionally omitted <==** Printed in The Netherlands Date of release: 2005 Jan 11 Document order number: 9397 750 14428 R75/03/pp11
Updated at June 10, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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