PBLS2022D,115

Bipolar Transistor Array, NPN, PNP, 20 V, 20 V, 1.8 A, 1.8 A, 480 mW

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Manufacturer: NEXPERIA
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency ft:130MHz; Power Dissipation Pd:480mW; DC Collector Current:-1.8A; DC Current Gain hFE:420
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: NPN, PNP
Power Dissipation NPN: 480mW
Power Dissipation PNP: 480mW
Transistor Case Style: SOT-457
Transition Frequency NPN: -
Transition Frequency PNP: 130MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 420hFE
DC Current Gain hFE Min PNP: 420hFE
Continuous Collector Current NPN: 1.8A
Continuous Collector Current PNP: 1.8A
Collector Emitter Voltage Max NPN: 20V
Collector Emitter Voltage Max PNP: 20V

Delivery and price
Units per pack	5000
Price	0.177 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 17, 2026