Illustrative purposes only
PBLS2022D,115
Bipolar Transistor Array, NPN, PNP, 20 V, 1.8 A, 480 mW, 420 hFE, SOT-457
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 420hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- DC Collector Current: 1.8A
- Power Dissipation Pd: 480mW
- Transition Frequency: 130MHz
- Power Dissipation NPN: 480mW
- Power Dissipation PNP: 480mW
- Transistor Case Style: SOT-457
- Transition Frequency PNP: 130MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 420hFE
- DC Current Gain hFE Min PNP: 420hFE
- Continuous Collector Current NPN: 1.8A
- Continuous Collector Current PNP: 1.8A
- Collector Emitter Voltage Max NPN: 20V
- Collector Emitter Voltage Max PNP: 20V
- Collector Emitter Voltage V(br)ceo: 20V
Delivery and price | |
---|---|
Units per pack | 5000 |
Price | 0.147 € |
Current stock | N/A |
Lead time | 30 days |