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This product is RoHS compilant

PBLS2022D,115

Bipolar Transistor Array, NPN, PNP, 20 V, 1.8 A, 480 mW, 420 hFE, SOT-457

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • DC Current Gain hFE: 420hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: NPN, PNP
  • DC Collector Current: 1.8A
  • Power Dissipation Pd: 480mW
  • Transition Frequency: 130MHz
  • Power Dissipation NPN: 480mW
  • Power Dissipation PNP: 480mW
  • Transistor Case Style: SOT-457
  • Transition Frequency PNP: 130MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 420hFE
  • DC Current Gain hFE Min PNP: 420hFE
  • Continuous Collector Current NPN: 1.8A
  • Continuous Collector Current PNP: 1.8A
  • Collector Emitter Voltage Max NPN: 20V
  • Collector Emitter Voltage Max PNP: 20V
  • Collector Emitter Voltage V(br)ceo: 20V
Delivery and price
Units per pack 5000
Price 0.147 €
Current stock N/A
Lead time 30 days