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P0102DA 2AL3
Thyristor, 400 V, 200 µA, 500 mA, 800 mA, TO-92, 3 Pins
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- Manufacturer: STMICROELECTRONICS
- Product type: Thyristors - SCRs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: P0102DA Series
- Thyristor Mounting: Through Hole
- Holding Current Max: 5mA
- On State RMS Current: 800mA
- Thyristor Case Style: TO-92
- Average On State Current: 500mA
- Gate Trigger Current Max: 200µA
- Gate Trigger Voltage Max: 800mV
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 8A
- Peak Repetitive Off State Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.07 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
**P0102DA** Datasheet ## 0.8 A 400 V high immunity sensitive SCR thyristor in TO-92 **==> picture [65 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>G<br>K<br>A<br>K<br>G<br>TO-92<br>**----- End of picture text -----**<br> ## **Features** - On-state rms current, IT(RMS) 0.8 A - 125 °C max. T j - Low 0.2 mA gate current - Repetitive peak off-state voltage, VDRM/VRRM 400 V - ECOPACK2 compliant ## **Applications** - Gate driver for large Thyristors - Overvoltage crowbar protection - Ground fault circuit interrupters - Arc fault circuit interrupter - Standby mode power supplies - Residual current detector ## **Description** Thanks to highly sensitive triggering levels, the 0.8 A P0102DA SCR thyristor is suitable for all applications where available gate current is limited. |**Product summary**<br>~~ea~~|**Product summary**<br>~~ea~~| |---|---| |**IT(RMS)**|0.8 A| |**VDRM/VRRM**|400 V| |**IGT**|0.2 mA| |**Tjmax.**|125 °C| This device offers a high blocking voltage of 400 V, ideal for applications like interrupters circuits. The P0102DA is available in through-hole TO-92 package. **DS13119** - **Rev 1** - **October 2019** For further information contact your local STMicroelectronics sales office. www.st.com **P0102DA Characteristics** **1** ## **Characteristics** **Table 1. Absolute maximum ratings (limiting values)** |**Symbol**|**Parameters**|||**Value**|**Unit**| |---|---|---|---|---|---| |IT(RMS)|On-state RMS current (180° conduction angle)||TL= 55 °C|0.8|A| |IT(AV)|Average on-state current (180° conduction angle)|||0.5|A| |ITSM|Non repetitive surge peak on-state current,<br>Tjinitial = 25 °C|tp= 8.3 ms|Tj= 25 °C|8|A| |||tp= 10 ms||7|| |I2t|I2t value for fusing|tp= 10 ms|Tj= 25 °C|0.24|A2s| |dl/dt|Critical rate of rise of on-state current<br>IG= 2 x IGT, tr≤ 100 ns|F = 60 Hz|Tj= 25 °C|50|A/µs| |VDRM/ VRRM|Repetitive peak off-state voltage||Tj= 125 °C|400|V| |IGM|Peak gate current|tp= 20 µs|Tj= 125 °C|1|A| |PG(AV)|Average gate power dissipation||Tj= 125 °C|0.1|W| |Tstg|Storage junction temperature range|||-40 to +150|°C| |Tj|Operating junction temperature range|||-40 to +125|°C| **Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)** |**Symbol**|**Parameters**||**Value**|**Unit**| |---|---|---|---|---| |IGT|VD= 12 V, RL= 33 Ω|Max.|200|µA| |VGT||Max.|0.8|V| |VGD|VD= VDRM, RL= 3.3 kΩ, RGK= 1 kΩ, Tj= 125 °C|Min.|0.1|V| |VRG|IRG= 10 µA|Min.|8|| |IH|IT= 50 mA, RGK= 1 kΩ|Max.|5|mA| |IL|IG= 1.2 IGT, RGK= 1 kΩ|Max.|6|mA| |dV/dt|VD= 67 % VDRM, RGK= 1 kΩ, Tj= 125 °C|Min.|75|V/µs| **Table 3. Static electrical characteristics** |**Symbol**|**Test conditions**|**Tj**||**Value**|**Unit**| |---|---|---|---|---|---| |VT|ITM= 1.6 A, tp= 380 µs|25 °C|Max.|1.95|V| |VTO|Threshold on-state voltage|125 °C|Max.|0.95|V| |Rd|Dynamic resistance|125 °C|Max.|600|mΩ| |IDRM<br>IRRM|VD= VDRM<br>VR= VRRM|25 °C|Max.|1|µA| |||125 °C||0.1|mA| **DS13119** - **Rev 1** **page 2/9** **P0102DA Characteristics** **Table 4. Thermal resistance** |**Symbol**|**Parameters**|**Max.**<br>**value**|**Unit**| |---|---|---|---| |Rth(j-l)|Junction to lead (DC)|80|°C/W| |Rth(j-a)|Junction to ambient (DC)|150|| **DS13119** - **Rev 1** **page 3/9** **P0102DA Characteristics (curves)** ## **1.1 Characteristics (curves)** **==> picture [513 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Maximum power dissipation versus on-state Figure 2. Average and DC on-state current versus lead<br>RMS current (full cycle) temperature<br>IT(AV)(A)<br>P(W) 1.1<br>1.0<br>1.0<br>0.9 α = 180°<br>0.9<br>0.8<br>0.7 0.8 D.C. (TO-92)<br>0.7<br>0.6<br>0.6<br>0.5<br>0.5<br>0.4<br>0.4<br>0.3<br>0.2 360° 0.3 α = 180° (TO-92)<br>0.2<br>0.10.0 IT(AV)(A) α 0.1 Tlead(°C)<br>0.0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6<br>0 25 50 75 100 125<br>**----- End of picture text -----**<br> **==> picture [513 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. Average and DC on-state current versus ambient Figure 4. Relative variation of thermal impedance versus<br>temperature pulse duration<br>IT(AV)(A) K=[Z th(j-a) /Rth(j-a) []]<br>1.2 1.00<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7 D.C. (TO-92) TO-92<br>0.6 0.10<br>0.5<br>0.4<br>0.3 α = 180° (TO-92)<br>0.2<br>0.1 Tamb(°C) tp(s)<br>0.0 0.01<br>0 25 5 0 75 100 125 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2<br>**----- End of picture text -----**<br> **Figure 5. Relative variation of holding current versus gate-cathode resistance** **Figure 6. Relative variation of gate voltage and gate, holding and latching current versus junction temperature** **==> picture [223 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> IH[ RGK] / IH[ [R] GK [ = 1 k][Ω]]<br>20<br>Tj = 25°C<br>18<br>16<br>14<br>12<br>10 Typical values<br>8<br>6<br>4<br>2<br>RGK(kΩ)<br>0<br>1E-2 1E-1 1E+0 1E+1<br>**----- End of picture text -----**<br> **==> picture [220 x 132] intentionally omitted <==** **----- Start of picture text -----**<br> IGT, V GT, I H, I L[Tj ] / I GT, V GT, I H, I L[Tj =25 °C]<br>6.0<br>Relative variations<br>Typical values<br>5.0<br>4.0<br>IGT<br>3.0<br>2.0 IH and IL<br>(RGK =1 KΩ)<br>1.0 VGT<br>T (°C)j<br>0.0<br>-40 -20 0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br> **DS13119** - **Rev 1** **page 4/9** **P0102DA Characteristics (curves)** **Figure 7. Relative variation of static dV/dt immunity Figure 8. Relative variation of dV/dt immunity versus gateversus gate-cathode resistance cathode capacitance** **==> picture [472 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> 10.0 dV/dt[R GK] / dV/dt[RGK = 1kΩ] 10 dV/dt[CGK] / dV/dt[RGK= 1kΩ, CGK = 0 F]<br>VD = 0.67 x VTj = 125°CDRM VD=RT 0.67 xVjGK= 125°C= 1kΩDRM<br>8<br>6<br>Typical values<br>1.0<br>4<br>Typical values<br>2<br>RGK(kΩ) 0 CGK(nF)<br>0.1<br>0 1 2 3 4 5 6 7<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>**----- End of picture text -----**<br> **==> picture [513 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 9. Surge peak on-state current versus number of Figure 10. Non-repetitive surge peak on-state current for<br>cycles sinusoidal pulse (tp< 10 ms)<br>ITSM(A) ITSM(A)<br>8 100.0<br>Tj initial = 25°C<br>7<br>6 tp = 10ms ITSM<br>One cycle 10.0<br>5<br>Non repetitive<br>4 Tj initial = 25°C<br>3 Repetitive<br>Tamb = 36 °C 1.0<br>2<br>1<br>0 Number of cycles 0.1 tp(ms)<br>1 1 0 100 1000 0.01 0.10 1.00 10.00<br>**----- End of picture text -----**<br> **Figure 11. On-state characteristics (maximum values)** **==> picture [220 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> ITM(A)<br>1E+1<br>Tj max.:<br>Vt0 = 0.95 V<br>Rd = 600 mΩ<br>1E+0 Tj = max Maximum values<br>Tj = 25 °C<br>1E-1<br>VTM(V)<br>1E-2<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>**----- End of picture text -----**<br> **DS13119** - **Rev 1** **page 5/9** **P0102DA Package information** **2 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ## **2.1 TO-92 package information** - Lead free plating + halogen-free molding resin - Epoxy meets UL94, V0 ## **Figure 12. TO-92 package outline** **==> picture [376 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> c<br>A<br>a<br>B C<br>b<br>F D E<br>**----- End of picture text -----**<br> **Table 5. TO-92 package mechanical data** ||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**| |---|---|---|---|---|---|---| |**Ref.**|**Millimeters**|||**Inches(1)**||| ||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**| |A||1.35|||0.0531|| |B|||4.70|||0.1850| |C||2.54|||0.1000|| |D|4.40|||0.1732||| |E|12.70|||0.5000||| |F|||3.70|||0.1457| |a|||0.50|||0.0197| |b||1.27|||0.0500|| |c|||0.48|||0.0189| _1. Inches dimensions given for information_ **DS13119** - **Rev 1** **page 6/9** **P0102DA Ordering information** **3** ## **Ordering information** **Figure 13. Ordering information scheme** **==> picture [341 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> P01 02 D A - xxxx<br>Sensitive<br>P01 = sensitive SCR, high immunity<br>Gate sensitivity<br>02 = 200 µA<br>Voltage<br>D = 400 V<br>Package<br>A = TO-92<br>Packing mode<br>1AA3 = Bag<br>2AL3 = Ammopack<br>5AL3 = Tape and reel 13 inch<br>**----- End of picture text -----**<br> **Table 6. Ordering information** |**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**| |---|---|---|---|---|---| |P0102DA 1AA3|P0102 DA|TO-92|0.22 g|2500|Bag| |P0102DA 2AL3||||2000|AMMOPACK not in dry bag| |P0102DA 5AL3||||2000|Tape and reel 13"| **DS13119** - **Rev 1** **page 7/9** **P0102DA** ## **Revision history** **Table 7. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |14-Oct-2019|1|Initial release.| **DS13119** - **Rev 1** **page 8/9** **P0102DA** ## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved **DS13119** - **Rev 1** **page 9/9**
Updated at April 28, 2026
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