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NXH80T120L3Q0S3G
IGBT Module, Dual [Half Bridge], 75 A, 1.7 V, 188 W, 175 °C, Module
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- Manufacturer: ONSEMI
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EliteSiC Series
- IGBT Technology: IGBT [Trench/Field Stop]
- IGBT Termination: Solder Pin
- Power Dissipation: 188W
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 75A
- Power Dissipation Pd: 188W
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 39.23 € |
| Current stock | 10+ |
| Lead time | 7 days |
Datasheet
## Q0PACK Module ## _Product Preview_ NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G The NXH80T120L3Q0S3/P3G is a power module containing a T−type neutral point clamped (NPC) three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. ## **www.onsemi.com** ## **Features** - Low Switching Loss - Low VCESAT - Compact 65.9 mm x 32.5 mm x 12 mm Package - Options with Pre−applied Thermal Interface Material (TIM) and Without Pre−applied TIM **==> picture [167 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> Q0PACK Q0PACK<br>CASE 180AA CASE 180AB<br>PRESS−FIT PINS SOLDERABLE PINS<br>**----- End of picture text -----**<br> - Options with Solderable Pins and Press−fit Pins - Thermistor ## **Typical Applications** - Solar Inverter - Uninterruptable Power Supplies **==> picture [234 x 242] intentionally omitted <==** **----- Start of picture text -----**<br> 15,16<br>Half Bridge<br>IGBTs & Diodes<br>T1 D1<br>17 ;<br>18<br>D2 D3<br>5,14 8,9,10,11<br>T2 T3<br>4 i<br>7 6 13 12<br>Neutral Point<br>IGBTs & Diodes<br>T4 D4<br>2 o _l<br>1<br>19 20<br>3,4 NTC<br>Figure 1. Schematic Diagram<br>ban<br>**----- End of picture text -----**<br> This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. ## **MARKING DIAGRAMS** **==> picture [176 x 125] intentionally omitted <==** **----- Start of picture text -----**<br> NXH80T120L3Q0S3xG<br>ATYYWW<br>NXH80T120L3Q0P3G<br>ATYYWW<br>—|<br>NXH80T120L3Q0S3G = Specific Device Code<br>S3xG = S3G or S3TG<br>G = Pb−free Package<br>**----- End of picture text -----**<br> A = Assembly Site Code T = Test Site Code YYWW = Year and Work Week Code **==> picture [188 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> PIN ASSIGNMENTS<br>a a ee<br>12 13 14 15 16 17 18<br>11 19<br>10<br>9<br>20<br>8<br>7 6 5 4 3 2 1<br>3h O i s<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information in the dimensions section on page 16 of this data sheet. Publication Order Number: **NXH80T120L3Q0S3G/D** **1** © Semiconductor Components Industries, LLC, 2018 **May, 2020 − Rev. P3** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **Table 1. MAXIMUM RATINGS** |**Table 1. MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |**HALF BRIDGE IGBT**|||| |Collector−Emitter Voltage|VCES|1200|V| |Gate−Emitter Voltage|VGE|±20|V| |Continuous Collector Current @ Tc= 80°C (TJ= 175°C)|IC|75|A| |Pulsed Collector Current (TJ= 175°C)|ICpulse|225|A| |Maximum Power Dissipation (TJ= 175°C)|Ptot|188|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|175|°C| |**NEUTRAL POINT IGBT**|||| |Collector−Emitter Voltage|VCES|650|V| |Gate−Emitter Voltage|VGE|±20|V| |Continuous Collector Current @ Tc= 80°C (TJ= 175°C)|IC|50|A| |Pulsed Collector Current (TJ= 175°C)|ICpulse|150|A| |Maximum Power Dissipation (TJ= 175°C)|Ptot|82|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|150|°C| |**HALF BRIDGE DIODE**|||| |Peak Repetitive Reverse Voltage|VRRM|1200|V| |Continuous Forward Current @ Tc= 80°C (TJ= 175°C)|IF|37|A| |Repetitive Peak Forward Current (TJ= 175°C)|IFRM|111|A| |Maximum Power Dissipation (TJ= 175°C)|Ptot|79|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|175|°C| |**NEUTRAL POINT DIODE**|||| |Peak Repetitive Reverse Voltage|VRRM|650|V| |Continuous Forward Current @ Tc= 80°C (TJ= 175°C)|IF|37|A| |Repetitive Peak Forward Current (TJ= 175°C)|IFRM|111|A| |Maximum Power Dissipation (TJ= 175°C)|Ptot|68|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|150|°C| |**THERMAL PROPERTIES**|||| |Maximum Operating Junction Temperature under Switching Conditions|TVJOP|150|°C| |Storage Temperature Range|Tstg|−40 to 125|°C| |Storage Temperature Range (TIM)|Tstg|−25 to 40|°C| |**INSULATION PROPERTIES**|||| |Isolation test voltage, t = 1 sec, 50 Hz|Vis|4000|VRMS| |Creepage distance||12.7|mm| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. **www.onsemi.com** **2** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** **Table 2. ELECTRICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted |**Table 2. ELECTRICAL CHARACTERIS**|**TICS**TJ= 25°C unless otherwise noted|||||| |---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**HALF BRIDGE IGBT CHARACTERISTICS**||||||| |Collector−Emitter Cutoff Current|VGE= 0 V, VCE= 1200 V|ICES|−|−|300|�A| |Collector−Emitter Saturation Voltage|VGE= 15 V, IC= 80 A, TJ= 25°C|VCE(sat)|−|1.7|2.4|V| ||VGE= 15 V, IC= 80 A, TJ= 150°C||−|1.8|−|| |Gate−Emitter Threshold Voltage|VGE= VCE, IC= 2 mA|VGE(TH)|4.6|5.6|6.5|V| |Gate Leakage Current|VGE= 20 V, VCE= 0 V|IGES|−|−|300|nA| |Turn−on Delay Time|TJ= 25°C<br>VCE= 350 V, IC= 60 A<br>VGE=±15 V, RG= 4.7�|td(on)|−|51|−|ns| |Rise Time||tr|−|27|−|| |Turn−off Delay Time||td(off)|−|200|−|| |Fall Time||tf|−|40|−|| |Turn−on Switching Loss per Pulse||Eon|−|0.74|−|mJ| |Turn off Switching Loss per Pulse||Eoff|−|1.41|−|| |Turn−on Delay Time|TJ= 125°C<br>VCE= 350 V, IC= 60 A<br>VGE=±15 V, RG= 4.7�|td(on)|−|45|−|ns| |Rise Time||tr|−|30|−|| |Turn−off Delay Time||td(off)|−|230|−|| |Fall Time||tf|−|110|−|| |Turn−on Switching Loss per Pulse||Eon|−|1.11|−|mJ| |Turn off Switching Loss per Pulse||Eoff|−|2.17|−|| |Input Capacitance|VCE= 20 V, VGE= 0 V, f = 10 kHz|Cies|−|18150|−|pF| |Output Capacitance||Coes|−|345|−|| |Reverse Transfer Capacitance||Cres|−|295|−|| |Total Gate Charge|VCE= 600 V, IC= 80 A, VGE=±15 V|Qg|−|817|−|nC| |Thermal Resistance − chip−to−heatsink|Thermal grease,<br>Thickness = 76�m,� = 2.9 W/mK|RthJH|−|0.51|−|°C/W| |**NEUTRAL POINT DIODE CHARACTERISTICS**||||||| |Diode Forward Voltage|IF= 50 A, TJ= 25°C|VF|−|1.38|2.1|V| ||IF= 50 A, TJ= 150°C||−|1.27|−|| |Reverse Recovery Time|TJ= 25°C<br>VCE= 350 V, IC= 60 A<br>VGE=±15 V, RG= 4.7�|trr|−|32|−|ns| |Reverse Recovery Charge||Qrr|−|1.35|−|�C| |Peak Reverse Recovery Current||IRRM|−|64|−|A| |Peak Rate of Fall of Recovery Current||di/dt|−|1100|−|A/�s| |Reverse Recovery Energy||Err|−|280|−|�J| |Reverse Recovery Time|TJ= 125°C<br>VCE= 350 V, IC= 60 A<br>VGE=±15 V, RG= 4.7�|trr|−|85|−|ns| |Reverse Recovery Charge||Qrr|−|3|−|�C| |Peak Reverse Recovery Current||IRRM|−|78|−|A| |Peak Rate of Fall of Recovery Current||di/dt|−|6500|−|A/�s| |Reverse Recovery Energy||Err|−|1390|−|�J| |Thermal Resistance − chip−to−heatsink|Thermal grease,<br>Thickness = 76�m,� = 2.9 W/mK|RthJH|−|1.39|−|°C/W| |**NEUTRAL POINT IGBT CHARACTERISTICS**||||||| |Collector−Emitter Cutoff Current|VGE= 0 V, VCE= 600 V|ICES|−|−|200|�A| |Collector−Emitter Saturation Voltage|VGE= 15 V, IC= 50 A, TJ= 25°C|VCE(sat)|−|1.0|1.4|V| ||VGE= 15 V, IC= 50 A, TJ= 150°C||−|0.93|−|| |Gate−Emitter Threshold Voltage|VGE= VCE, IC= 250�A|VGE(TH)|3|3.6|5|V| |Gate Leakage Current|VGE= 20 V, VCE= 0 V|IGES|−|−|500|nA| **www.onsemi.com** **3** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** **Table 2. ELECTRICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted |**Table 2. ELECTRICAL CHARACTERIS**|**TICS**TJ= 25°C unless otherwise noted|||||| |---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**NEUTRAL POINT IGBT CHARACTERISTICS**||||||| |Turn−on Delay Time|TJ= 25°C<br>VCE= 350 V, IC= 60 A<br>VGE=±15 V, RG= 20�|td(on)|−|65|−|ns| |Rise Time||tr|−|20|−|| |Turn−off Delay Time||td(off)|−|660|−|| |Fall Time||tf|−|20|−|| |Turn−on Switching Loss per Pulse||Eon|−|1.37|−|mJ| |Turn off Switching Loss per Pulse||Eoff|−|0.9|−|| |Turn−on Delay Time|TJ= 125°C<br>VCE= 350 V, IC= 60 A<br>VGE=±15 V, RG= 20�|td(on)|−|70|−|ns| |Rise Time||tr|−|28|−|| |Turn−off Delay Time||td(off)|−|720|−|| |Fall Time||tf|−|30|−|| |Turn−on Switching Loss per Pulse||Eon|−|2.45|−|mJ| |Turn off Switching Loss per Pulse||Eoff|−|1.0|−|| |Input Capacitance|VCE= 20 V, VGE= 0 V, f = 10 kHz|Cies|−|16881|−|pF| |Output Capacitance||Coes|−|107|−|| |Reverse Transfer Capacitance||Cres|−|94|−|| |Total Gate Charge|VCE= 480 V, IC= 50 A, VGE=±15 V|Qg|−|830|−|nC| |Thermal Resistance − chip−to−heatsink|Thermal grease,<br>Thickness = 76�m,� = 2.9 W/mK|RthJH|−|1.16|−|°C/W| |**HALF BRIDGE DIODE CHARACTERISTICS**||||||| |Diode Forward Voltage|IF= 40 A, TJ= 25°C|VF|−|2.43|3.10|V| ||IF= 40 A, TJ= 150°C||−|1.63|−|| |Reverse recovery time|TJ= 25°C<br>VCE= 350 V, IC= 60 A<br>VGE=±15 V, RG= 62�|trr|−|45|−|ns| |Reverse recovery charge||Qrr|−|2|−|�C| |Peak reverse recovery current||IRRM|−|140|−|A| |Peak rate of fall of recovery current||di/dt|−|860|−|A/�s| |Reverse recovery energy||Err|−|310|−|�J| |Reverse recovery time|TJ= 125°C<br>VCE= 350 V, IC= 60 A<br>VGE=±15 V, RG= 62�|trr|−|75|−|ns| |Reverse recovery charge||Qrr|−|5.5|−|�C| |Peak reverse recovery current||IRRM|−|125|−|A| |Peak rate of fall of recovery current||di/dt|−|740|−|A/�s| |Reverse recovery energy||Err|−|640|−|�J| |Thermal Resistance − chip−to−heatsink|Thermal grease,<br>Thickness = 76�m,� = 2.9 W/mK|RthJH|−|1.2|−|°C/W| |**THERMISTOR CHARACTERISTICS**||||||| |Nominal resistance||R|−|22|−|k�| |Nominal resistance|T = 100°C|R|−|1468|−|�| |Deviation of R25||�R/R|−5|−|5|%| |Power dissipation||PD|−|200|−|mW| |Power dissipation constant|||−|2|−|mW/K| |B−value|B(25/50), tolerance±3%||−|−|3950|K| |B−value|B(25/100), tolerance±3%||−|−|3998|K| |NTC reference|||||B|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **4** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** **==> picture [306 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE<br>**----- End of picture text -----**<br> **==> picture [490 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 240 240<br>TJ = 25 ° C 11 V VGS = 12 to 19 V 11 V<br>200 200<br>10 V<br>VGS = 12 to 19 V<br>160 10 V 160<br>TJ = 150 ° C<br>120 120 9 V<br>80 9 V 80<br>8 V<br>40 40<br>8 V 7 V<br>7 V<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 2. Typical Output Characteristics Figure 3. Typical Output Characteristics<br>160 120<br>140<br>100<br>120<br>80<br>100<br>80 60<br>TJ = 150 ° C TJ = 25 ° C TJ = 150 ° C TJ = 25 ° C<br>60<br>40<br>40<br>20<br>20<br>0 0<br>0 5 10 15 0 1 2 3 4<br>VGE, GATE−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristics Figure 5. Typical Diode Forward<br>Characteristics<br>100<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>10<br>0.05<br>0.02<br>1 0.01<br>0.1<br>Single Pulse<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>PULSE ON TIME (s)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>, FORWARD CURRENT (A)<br>, COLLECTOR CURRENT (A)IC IF<br>C/W)<br>°<br>DUTY CYCLE PEAK RESPONSE (<br>**----- End of picture text -----**<br> **Figure 6. Transient Thermal Impedance (Half Bridge IGBT)** **www.onsemi.com** **5** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE** **==> picture [490 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1 Duty Cycle = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>0.01<br>Single Pulse<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>C/W)<br>°<br>DUTY CYCLE PEAK RESPONSE (<br>**----- End of picture text -----**<br> **==> picture [74 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> PULSE ON TIME (s)<br>**----- End of picture text -----**<br> **Figure 7. Transient Thermal Impedance (Half Bridge Diode)** **==> picture [244 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1K<br>50 � s<br>100<br>100 � s<br>10 1 ms<br>dc operation<br>Single Nonrepetitive<br>1 Pulse TC = 25 ° C<br>Curves must be derated linearly<br>with increase in temperature<br>0.1<br>1 10 100 1K 10K<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 8. FB Safe Operating Area** **==> picture [240 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>VCE = 600 V<br>14 IC = 80 A<br>VGE = 15 V<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 300 600 900<br>Qg, GATE CHARGE (nC)<br>, GATE VOLTAGE (V)<br>GE<br>V<br>**----- End of picture text -----**<br> **Figure 9. Gate Voltage vs. Gate Charge** **www.onsemi.com** **6** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE** **==> picture [491 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 150 150<br>VGS = 6 to 18 V VGS = 6 to 18 V<br>5.6 V<br>120 120<br>5.0 V<br>TJ = 25 ° C TJ = 150 ° C<br>90 90<br>5.4 V 4.8 V<br>60 60<br>4.6 V<br>5.2 V<br>30 30<br>4.4 V<br>5.0 V<br>4.2 V<br>4.8 V<br>0 0<br>0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 2.0<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 10. Typical Output Characteristics Figure 11. Typical Output Characteristics<br>150 150<br>120 120<br>90 90<br>TJ = 150 ° C TJ = 25 ° C<br>60 60<br>TJ = 150 ° C TJ = 25 ° C<br>30 30<br>0 0<br>0 2 4 6 8 0 0.5 1.0 1.5 2.0 2.5<br>VGE, GATE−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)<br>Figure 12. Typical Transfer Characteristics Figure 13. Typical Diode Forward<br>Characteristics<br>10<br>1 Duty Cycle = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>0.01<br>0.01<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>PULSE ON TIME (s)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>, FORWARD CURRENT (A)<br>, COLLECTOR CURRENT (A)IC IF<br>C/W)<br>°<br>DUTY CYCLE PEAK RESPONSE (<br>**----- End of picture text -----**<br> **Figure 14. Transient Thermal Impedance (Neutral Point IGBT)** **www.onsemi.com** **7** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE** **==> picture [491 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Duty Cycle = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.1 0.02<br>0.01<br>Single Pulse<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>PULSE ON TIME (s)<br>C/W)<br>°<br>DUTY CYCLE PEAK RESPONSE (<br>**----- End of picture text -----**<br> **Figure 15. Transient Thermal Impedance (Neutral Point Diode)** **==> picture [244 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1K<br>50 � s<br>100<br>100 � s<br>1 ms<br>10<br>dc operation<br>1 Single Nonrepetitive<br>Pulse TC = 25 ° C<br>Curves must be derated linearly<br>with increase in temperature<br>0.1<br>1 10 100 1K 10K<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 16. FB Safe Operating Area** **==> picture [239 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>VCE = 480 V<br>14 IC = 75 A<br>VGE = 15 V<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 1000 2000 3000<br>Qg, GATE CHARGE (nC)<br>, GATE VOLTAGE (V)<br>GE<br>V<br>**----- End of picture text -----**<br> **Figure 17. Gate Voltage vs. Gate Charge** **www.onsemi.com** **8** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE** **Figure 18. Typical Turn On Loss vs. IC** **Figure 19. Typical Turn On Loss vs. RG** **Figure 20. Typical Turn Off Loss vs. IC** **Figure 21. Typical Turn Off Loss vs. RG** **Figure 22. Typical Switching Times Tdon vs. IC** **==> picture [189 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 23. Typical Switching Times Tdon vs.<br>RG<br>**----- End of picture text -----**<br> **www.onsemi.com** **9** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE** **Figure 24. Typical Switching Times Tdoff vs. IC** **Figure 25. Typical Switching Times Tdoff vs. RG** **Figure 26. Typical Switching Times Tron vs. IC** **Figure 27. Typical Switching Times Tron vs. RG** **Figure 28. Typical Switching Times Tf vs. IC** **Figure 29. Typical Switching Times Tf vs. RG** **www.onsemi.com** **10** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE** **Figure 30. Typical Reverse Recovery Energy vs. IC** **Figure 31. Typical Reverse Recovery Energy vs. RG** **Figure 32. Typical Reverse Recovery Time vs. IC** **==> picture [195 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 33. Typical Reverse Recovery Time vs.<br>RG<br>**----- End of picture text -----**<br> **Figure 34. Typical Reverse Recovery Charge vs. IC** **Figure 35. Typical Reverse Recovery Charge vs. RG** **www.onsemi.com** **11** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE** **Figure 36. Typical Reverse Recovery Current vs. IC** **Figure 37. Typical Reverse Recovery Current vs. RG** **Figure 38. Typical di/dt vs. IC** **Figure 39. Typical di/dt vs. RG** **www.onsemi.com** **12** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE** **Figure 40. Typical Turn On Loss vs. IC** **Figure 41. Typical Turn On Loss vs. RG** **Figure 42. Typical Turn Off Loss vs. IC** **Figure 43. Typical Turn Off Loss vs. RG** **Figure 44. Typical Switching Times Tdon vs. IC** **==> picture [189 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 45. Typical Switching Times Tdon vs.<br>RG<br>**----- End of picture text -----**<br> **www.onsemi.com** **13** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE** **Figure 46. Typical Switching Times Tdoff vs. IC** **Figure 47. Typical Switching Times Tdoff vs. RG** **Figure 48. Typical Switching Times Tron vs. IC** **Figure 49. Typical Switching Times Tron vs. RG** **Figure 50. Typical Switching Times Tf vs. IC** **Figure 51. Typical Switching Times Tf vs. RG** **www.onsemi.com** **14** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE** **Figure 52. Typical Reverse Recovery Energy vs. IC** **Figure 53. Typical Reverse Recovery Energy vs. RG** **Figure 54. Typical Reverse Recovery Time vs. IC** **Figure 55. Typical Reverse Recovery Time vs. RG** **Figure 56. Typical Reverse Recovery Charge vs. IC** **Figure 57. Typical Reverse Recovery Charge vs. RG** **www.onsemi.com** **15** **NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G** ## **TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE** **Figure 58. Typical Reverse Recovery Current vs. IC** **Figure 59. Typical Reverse Recovery Current vs. RG** **Figure 60. Typical di/dt vs IC** **Figure 61. Typical di/dt vs RG** ## **ORDERING INFORMATION** |**Orderable Part Number**|**Marking**|**Package**|**Shipping**| |---|---|---|---| |NXH80T120L3Q0P3G|NXH80T120L3Q0P3G|Q0PACK − Case 180AA<br>(Pb−Free and Halide−Free)|24 Units / Blister Tray| |NXH80T120L3Q0S3G|NXH80T120L3Q0S3G|Q0PACK − Case 180AB<br>(Pb−Free and Halide−Free)|24 Units / Blister Tray| |NXH80T120L3Q0S3TG|NXH80T120L3Q0S3TG|Q0PACK − Case 180AB<br>with pre−applied thermal interface material<br>(TIM)<br>(Pb−Free and Halide−Free)|24 Units / Blister Tray| **www.onsemi.com** **16** ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [108 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> PIM20, 55x32.5 / Q0PACK<br>CASE 180AA<br>ISSUE D<br>**----- End of picture text -----**<br> **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 07 AUG 2018<br>**----- End of picture text -----**<br> **==> picture [132 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>XXXXXXXXXXXXXXXXG<br>ATYYWW<br>XXXXX = Specific Device Code<br>G = Pb−Free Package<br>AT = Assembly & Test Site Code<br>YYWW = Year and Work Week Code<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER: 98AON95859F** **DESCRIPTION: PIM20, 55x32.5 / Q0PACK** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [297 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> PIM20, 55x32.5 / Q0PACK<br>CASE 180AB<br>ISSUE D<br>DATE 21 NOV 2017<br>**----- End of picture text -----**<br> ## **MOUNTING FOOTPRINT & MARKING DIAGRAM ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DOCUMENT NUMBER: 98AON98424F DESCRIPTION: PIM20 55X32.5 / Q0PACK (SOLDER PIN)** ## **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 DATE 21 NOV 2017 ## **PIM20, 55x32.5 / Q0PACK** CASE 180AB ISSUE D **GENERIC MARKING DIAGRAM*** XXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **98AON98424F** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: PIM20 55X32.5 / Q0PACK (SOLDER PIN) PAGE 2 OF 2** ## **DOCUMENT NUMBER: 98AON98424F** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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