Illustrative purposes only
NXH80T120L3Q0S3G
IGBT Module, Dual [Half Bridge], 75 A, 1.7 V, 188 W, 175 °C, Module
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: IGBT Modules
- Product variants: No other variants available. No other names.
- IGBT Technology: IGBT [Trench/Field Stop]
- IGBT Termination: Solder Pin
- Power Dissipation: 188W
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 75A
- Power Dissipation Pd: 188W
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 62.39 € |
| Current stock | 7 |
| Lead time | 7 days |
Datasheet
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