Illustrative purposes only
NXH80B120H2Q0SG
IGBT Module, PIM Half Bridge Inverter, 40 A, 2.2 V, 103 W, 150 °C, PIM
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: IGBT Modules
- Product variants: No other variants available. No other names.
- No. of Pins: 22Pins
- IGBT Technology: Trench Field Stop
- IGBT Termination: Solder
- Power Dissipation: 103W
- IGBT Configuration: PIM Half Bridge Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 40A
- Power Dissipation Pd: 103W
- Transistor Case Style: PIM
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 2.2V
- Collector Emitter Saturation Voltage Vce(on): 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 57.37 € |
| Current stock | 21 |
| Lead time | 7 days |
Datasheet
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