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NXH400N100H4Q2F2SG
IGBT Module, Four Pack, 409 A, 1.77 V, 959 W, 175 °C, Module
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- Manufacturer: ONSEMI
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EliteSiC Series
- IGBT Technology: IGBT [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 959W
- IGBT Configuration: Four Pack
- Transistor Mounting: Panel
- DC Collector Current: 409A
- Power Dissipation Pd: 959W
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 409A
- Collector Emitter Voltage Max: 1kV
- Collector Emitter Voltage V(br)ceo: 1kV
- Collector Emitter Saturation Voltage: 1.77V
- Collector Emitter Saturation Voltage Vce(on): 1.77V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 185.03 € |
| Current stock | 25+ |
| Lead time | 7 days |
Datasheet
**DATA SHEET www.onsemi.com** ## Three Level NPC Q2Pack Module ## NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG-R This high−denity, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes. **==> picture [120 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> Q2PACK INPC PRESS FIT PINS<br>PIM42, 93x47 (PRESSFIT)<br>CASE 180BH<br>**----- End of picture text -----**<br> ## **Features** - Extremely Efficient Trench with Field Stop Technology - Low Switching Loss Reduces System Power Dissipation - Module Design Offers High Power Density - Low Inductive Layout - Low Package Height - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Typical Applications** - Solar Inverters - Uninterruptable Power Supplies Systems **Q2PACK INPC SOLDER PINS PIM44, 93x47 (SOLDER PIN) CASE 180BS** ## **MARKING DIAGRAM** NXH400N100H4Q2F2PG/SG ATYYWW NXH400N100H4Q2F2PG/SG = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code **PIN CONNECTIONS** See details pin connections on page 2 of this data sheet. ~~a~~ **ORDERING INFORMATION** See detailed ordering and shipping information on page 6 of this data sheet. **Figure 1. NXH400N100H4Q2F2PG/SG/SG−R Schematic Diagram** Publication Order Number: **NXH400N100H4Q2F2/D** **1** © Semiconductor Components Industries, LLC, 2020 **January, 2022 − Rev. 3** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **PIN CONNECTIONS** **==> picture [337 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> NTC1 NTC2 G2 E2 Ph1 Ph1 Ph1 Ph1 Ph1 Ph2 Ph2 Ph2 Ph2 Ph2<br>42 41 40 39 38 37 36 35 34 33 32 31 30 29<br>28<br>SP 27<br>25 26<br>SN<br>G3 E3<br>24<br>G1<br>23<br>E1<br>G4 22<br>E4 21<br>1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20<br>DC+ DC+ DC+ DC+ DC+ N1 N1 N1 N1 N1 N2 N2 N2 N2 N2 DC− DC− DC− DC− DC−<br>**----- End of picture text -----**<br> **Figure 2. Pin Connections** **ABSOLUTE MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**ABSOLUTE MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted|)||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |**OUTER IGBT (T1, T4)**|||| |Collector-Emitter Voltage|VCES|1000|V| |Gate-Emitter Voltage<br>Positive Transient Gate−Emitter Voltage (Tpulse= 5�s, D < 0.10)|VGE|±20<br>30|V| |Continuous Collector Current @ TC= 80°C|IC|409|A| |Pulsed Peak Collector Current @ TC= 80°C (TJ= 150°C)|IC(Pulse)|1227|A| |Maximum Power Dissipation (TJ= 150°C)|Ptot|959|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|175|°C| |**INNER IGBT (T2, T3)**|||| |Collector-Emitter Voltage|VCES|1000|V| |Gate-Emitter Voltage<br>Positive Transient Gate−Emitter Voltage (Tpulse= 5�s, D < 0.10)|VGE|±20<br>30|V| |Continuous Collector Current @ TC= 80°C|IC|360|A| |Pulsed Peak Collector Current @ TC= 80°C (TJ= 150°C)|IC(Pulse)|1080|A| |Maximum Power Dissipation (TJ= 175°C)|Ptot|805|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|175|°C| |**IGBT INVERSE DIODE (D1, D2, D3, D4)**|||| |Peak Repetitive Reverse Voltage|VRRM|1000|V| |Continuous Forward Current @ TC= 80°C|IF|192|A| |Repetitive Peak Forward Current (TJ= 175°C)|IFRM|576|A| **www.onsemi.com** **2** ## **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** **ABSOLUTE MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) (continued) |**ABSOLUTE MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)|(continued)||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |**IGBT INVERSE DIODE (D1, D2, D3, D4)**|||| |Maximum Power Dissipation (TJ= 175°C)|Ptot|482|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|175|°C| |**NEUTRAL POINT DIODE (D5, D6)**|||| |Peak Repetitive Reverse Voltage|VRRM|1200|V| |Continuous Forward Current @ TC= 80°C|IF|140|A| |Repetitive Peak Forward Current (TJ= 175°C)|IFRM|420|A| |Maximum Power Dissipation (TJ= 175°C)|Ptot|401|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|175|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and/or APPLICATION INFORMATION for Safe Operating parameters. **THERMAL AND INSULATION PROPERTIES** (TJ = 25 ° C unless otherwise noted) |**THERMAL AND INSULATION PROPERTIES**(TJ= 25°C unless othe|rwise noted)||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |**THERMAL PROPERTIES**|||| |Operating Temperature under Switching Condition|TVJOP|−40to 150|°C| |Storage Temperature Range|Tstg|−40to 125|°C| |**INSULATION PROPERTIES**|||| |Isolation Test Voltage, t = 2 s, 50 Hz (Note 3)|Vis|4000|VRMS| |Creepage Distance||12.7|mm| |Comparative Tracking Index|CTI|>600|| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Refer to ELECTRICAL CHARACTERISTICS and/or APPLICATION INFORMATION for Safe Operating parameters. 3. 4000 VACRMS for 1 second duration is equivalent to 3333 VACRMS for 1 minute duration. **www.onsemi.com** **3** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTI**|**CS**(TJ= 25°C unless otherwise specifie|d)||||| |---|---|---|---|---|---|---| |**Characteristic**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OUTER IGBT (T1, T4) CHARACTERISTICS**||||||| |Collector-Emitter Cutoff Current|VGE= 0 V, VCE= 1000 V|ICES|–|–|500|�A| |Collector-Emitter Saturation Voltage|VGE= 15 V, IC= 400 A, TJ= 25°C|VCE(sat)|–|1.77|2.3|V| ||VGE= 15 V, IC= 400 A, TJ= 150°C||–|2.11|–|| |Gate-Emitter Threshold Voltage|VGE= VCE, IC= 400 mA|VGE(TH)|4.1|5.1|6.1|V| |Gate Leakage Current|VGE=±20 V, VCE= 0 V|IGES|–|–|±2000|nA| |Internal Gate Resistor||RG|−|1.44|−|�| |Turn-on Delay Time|TJ= 25°C<br>VCE= 600 V, IC= 150 A<br>VGE= −8 V, 15 V, RGon= 6�,<br>RGoff= 11�|td(on)|–|151|–|ns| |Rise Time||tr|–|35|–|| |Turn-off Delay Time||td(off)|–|551|–|| |Fall Time||tf|–|68|–|| |Turn-on Switching Loss per Pulse||Eon|–|3270|–|�J| |Turn-off Switching Loss per Pulse||Eoff|–|5100|–|| |Turn-on Delay Time|TJ= 125°C<br>VCE= 600 V, IC= 150 A<br>VGE= −8 V, 15 V, RGon= 6�,<br>RGoff= 11�|td(on)|–|146|–|ns| |Rise Time||tr|–|40|–|| |Turn-off Delay Time||td(off)|–|626|–|| |Fall Time||tf|–|88|–|| |Turn-on Switching Loss per Pulse||Eon|–|4165|–|�J| |Turn-off Switching Loss per Pulse||Eoff|–|8420|–|| |Input Capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|–|26093|–|pF| |Output Capacitance||Coes|–|1012|–|| |Reverse Transfer Capacitance||Cres|–|104|–|| |Total Gate Charge|VCE= 600 V, IC= 300 A,<br>VGE= −15 V~15 V|Qg|–|1304|–|nC| |Thermal Resistance −<br>Chip-to-Heatsink|Thermal grease,<br>Thickness = 2.1 Mil±2%<br>�= 2.9 W/mK|RthJH|–|0.181|–|K/W| |Thermal Resistance − Chip-to-Case||RthJC|–|0.073|–|K/W| |**NEUTRAL POINT DIODE (D5, D6) CHARACTERISTICS**||||||| |Diode Forward Voltage|IF= 100 A, TJ= 25°C|VF|–|1.50|1.85|V| ||IF= 100 A, TJ= 150°C||–|2.07|–|| |Reverse Recovery Time|TJ= 25°C<br>VCE= 600 V, IC= 150 A<br>VGE= −8 V, 15 V, RG= 6�|trr|–|19|–|ns| |Reverse Recovery Charge||Qrr|–|229|–|nC| |Peak Reverse Recovery Current||IRRM|–|19|–|A| |Peak Rate of Fall of Recovery<br>Current||di/dt|–|6053|–|A/�s| |Reverse Recovery Energy||Err|–|164|–|�J| |Reverse Recovery Time|TJ= 125°C<br>VCE= 600 V, IC= 150 A<br>VGE= −8 V, 15 V, RG= 6�|trr|–|34|–|ns| |Reverse Recovery Charge||Qrr|–|359|–|nC| |Peak Reverse Recovery Current||IRRM|–|17|–|A| |Peak Rate of Fall of Recovery<br>Current||di/dt|–|4621|–|A/�s| |Reverse Recovery Energy||Err|–|211|–|�J| |Thermal Resistance −<br>Chip-to-Heatsink|Thermal grease,<br>Thickness = 2.1 Mil±2%<br>�= 2.9 W/mK|RthJH|–|0.364|–|K/W| |Thermal Resistance − Chip-to-Case||RthJC|–|0.237|–|K/W| **www.onsemi.com** **4** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) (continued) |**ELECTRICAL CHARACTERISTI**|**CS**(TJ= 25°C unless otherwise specifie|d) (continued)||||| |---|---|---|---|---|---|---| |**Characteristic**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**INNER IGBT (T2, T3) CHARACTERISTICS**||||||| |Collector-Emitter Cutoff Current|VGE= 0 V, VCE= 1000 V|ICES|–|–|500|�A| |Collector-Emitter Saturation Voltage|VGE= 15 V, IC= 400 A, TJ= 25°C|VCE(sat)|–|1.77|2.3|V| ||VGE= 15 V, IC= 400 A, TJ= 150°C||–|2.11|–|| |Gate-Emitter Threshold Voltage|VGE= VCE, IC= 400 mA|VGE(TH)|4.1|5.1|6.1|V| |Gate Leakage Current|VGE=±20 V, VCE= 0 V|IGES|–|–|±2000|nA| |Internal Gate Resistor||RG|−|1.44|−|�| |Turn-on Delay Time|TJ= 25°C<br>VCE= 600 V, IC= 150 A<br>VGE= −8 V, 15 V, RGon= 6�,<br>RGoff= 23�|td(on)|–|149|–|ns| |Rise Time||tr|–|37|–|| |Turn-off Delay Time||td(off)|–|882|–|| |Fall Time||tf|–|35|–|| |Turn-on Switching Loss per Pulse||Eon|–|4970|–|�J| |Turn-off Switching Loss per Pulse||Eoff|–|6010|–|| |Turn-on Delay Time|TJ= 125°C<br>VCE= 600 V, IC= 150 A<br>VGE= −8 V, 15 V, RGon= 6�,<br>RGoff= 23�|td(on)|–|146|–|ns| |Rise Time||tr|–|42|–|| |Turn-off Delay Time||td(off)|–|977|–|| |Fall Time||tf|–|12|–|| |Turn-on Switching Loss per Pulse||Eon|–|7790|–|�J| |Turn-off Switching Loss per Pulse||Eoff|–|8530|–|| |Input Capacitance|VCE= 20 V, VGE= 0 V, f = 1 MHz|Cies|–|26093|–|pF| |Output Capacitance||Coes|–|1012|–|| |Reverse Transfer Capacitance||Cres|–|104|–|| |Total Gate Charge|VCE= 600 V, IC= 300 A,<br>VGE= 15 V|Qg|–|1304|–|nC| |Thermal Resistance −<br>Chip-to-Heatsink|Thermal grease,<br>Thickness = 2.1 Mil±2%<br>�= 2.9 W/mK|RthJH|–|0.207|–|K/W| |Thermal Resistance − Chip-to-Case||RthJC|–|0.087|–|K/W| |**IGBT INVERSE DIODE (D1, D2, D3, D4) CHARACTERISTICS**||||||| |Diode Forward Voltage|IF= 150 A, TJ= 25°C|VF|–|2.0|2.6|V| ||IF= 150 A, TJ= 150°C||–|1.77|–|| |Reverse Recovery Time|TJ= 25°C<br>VCE= 600 V, IC= 150 A<br>VGE= −8 V, 15 V, RG= 6�|trr|–|105|–|ns| |Reverse Recovery Charge||Qrr|–|4179|–|nC| |Peak Reverse Recovery Current||IRRM|–|97|–|A| |Peak Rate of Fall of Recovery<br>Current||di/dt|–|4571|–|A/�s| |Reverse Recovery Energy||Err|–|950|–|�J| |Reverse Recovery Time|TJ= 125°C<br>VCE= 600 V, IC= 150 A<br>VGE= −8 V, 15 V, RG= 6�|trr|–|179|–|ns| |Reverse Recovery Charge||Qrr|–|11900|–|nC| |Peak Reverse Recovery Current||IRRM|–|132|–|A| |Peak Rate of Fall of Recovery<br>Current||di/dt|–|4167|–|A/�s| |Reverse Recovery Energy||Err|–|3750|–|�J| |Thermal Resistance −<br>Chip-to-Heatsink|Thermal grease,<br>Thickness = 2.1 Mil±2%<br>�= 2.9 W/mK|RthJH|–|0.316|–|K/W| |Thermal Resistance − Chip-to-Case||RthJC|–|0.197|–|K/W| **www.onsemi.com** **5** ## **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) (continued) |**ELECTRICAL CHARACTERISTI**|**CS**(TJ= 25°C unless otherwise specifie|d) (continued)||||| |---|---|---|---|---|---|---| |**Characteristic**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**THERMISTOR CHARACTERISTICS**||||||| |Nominal Resistance|T = 25°C|R25|–|22|–|k�| |Nominal Resistance|T = 100°C|R100|–|1486|–|�| |Deviation of R25||�R/R|−5|–|5|%| |Power Dissipation||PD|–|200|–|mW| |Power Dissipation Constant|||–|2|–|mW/K| |B-value|B (25/50), tolerance±3%||–|3950|−|K| |B-value|B (25/100), tolerance±3%||–|3998|−|K| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Part Number**|**Marking**|**Package**|**Shipping**| |NXH400N100H4Q2F2PG<br>PRESS FIT PINS|NXH400N100H4Q2F2PG|PIM42, 93x47 (PRESSFIT)<br>(Pb−Free/Halide−Free)|12 Units / Blister Tray| |NXH400N100H4Q2F2SG,<br>NXH400N100H4Q2F2SG−R<br>SOLDER PINS|NXH400N100H4Q2F2SG,<br>NXH400N100H4Q2F2SG−R|PIM44, 93x47 (SOLDER PIN)<br>(Pb−Free/Halide−Free)|12 Units / Blister Tray| **www.onsemi.com** **6** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE** **Figure 3. Typical Output Characteristics – Inner IGBT** **Figure 4. Typical Output Characteristics – Inner IGBT** **Figure 5. Transfer Characteristics – Inner IGBT** **Figure 6. Saturation Voltage Characteristic** **Figure 7. Inverse Diode Forward Characteristics** **Figure 8. Buck Diode Forward Characteristics** **www.onsemi.com** **7** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **TYPICAL CHARACTERISTICS – OUTER IGBT** **Figure 9. Typical Turn ON Loss vs. IC** **Figure 10. Typical Turn OFF Loss vs. IC** **Figure 11. Typical Turn On Loss vs. Rg** **Figure 12. Typical Turn Off Loss vs. Rg** **Figure 13. Typical Turn−Off Switching Time vs. IC** **Figure 14. Typical Turn−On Switching Time vs. IC** **www.onsemi.com** **8** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **TYPICAL CHARACTERISTICS – OUTER IGBT** (continued) **Figure 15. Typical Turn−Off Switching Time vs. Rg** **Figure 16. Typical Turn−On Switching Time vs. Rg** **www.onsemi.com** **9** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **TYPICAL CHARACTERISTICS – INNER IGBT** **Figure 17. Typical Turn On Switching Time vs. IC** **Figure 18. Typical Turn Off Switching Time vs. IC** **Figure 19. Typical Turn On Switching Time vs. RG** **Figure 20. Typical Turn Off Switching Time vs. RG** **www.onsemi.com** **10** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **TYPICAL CHARACTERISTICS – INNER IGBT** (continued) **Figure 23. Typical Turn−Off Switching Time vs. IC** **Figure 24. Typical Turn−On Switching Time vs. IC** **Figure 21. Typical Turn−Off Switching Time vs. Rg** **Figure 22. Typical Turn−On Switching Time vs.Rg** **www.onsemi.com** **11** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **TYPICAL SWITCHING CHARACTERISTICS – NEUTRAL POINT DIODE** **Figure 25. Typical Reverse Recovery Energy Loss vs. IC** **Figure 26. Typical Reverse Recovery Energy Loss vs. R g** **Figure 27. Typical Reverse Recovery Time vs. Rg** **Figure 28. Typical Reverse Recovery Charge vs. Rg** **Figure 29. Typical Reverse Recovery Peak Current vs. R g** **www.onsemi.com** **12** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **TYPICAL CHARACTERISTICS – INVERSE DIODE** **Figure 30. Typical Reverse Recovery Energy Loss vs. IC** **Figure 31. Typical Reverse Recovery Energy Loss vs. R g** **Figure 32. Typical Reverse Recovery Time vs. Rg** **Figure 33. Typical Reverse Recovery Charge vs. Rg** **Figure 34. Typical Reverse Recovery Peak Current vs. R g** **www.onsemi.com** **13** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE** **Figure 35. FBSOA − Outer IGBT** **Figure 36. RBSOA − Outer IGBT** **Figure 37. FBSOA − Inner IGBT** **Figure 38. RBSOA − Inner IGBT** **Figure 39. Gate Voltage vs. Gate Charge** **Figure 40. Capacitance Charge** **www.onsemi.com** **14** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** ## **TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE** (continued) **Figure 41. Thermistor Characteristics** **Figure 42. Transient Thermal Impedance – Outer IGBT** **Figure 43. Transient Thermal Impedance – Inner IGBT** **www.onsemi.com** **15** **NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R** **TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE** (continued) **Figure 44. Transient Thermal Impedance – Inverse Diode** **Figure 45. Transient Thermal Impedance – Neutral Point Diode** **www.onsemi.com** **16** ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [298 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> PIM42, 93x47 (PRESSFIT)<br>CASE 180BH<br>ISSUE O<br>DATE 06 AUG 2019<br>**----- End of picture text -----**<br> **==> picture [119 x 45] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>XXXXXXXXXXXXXXXXXXXXXG<br>ATYYWW<br>**----- End of picture text -----**<br> XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW= Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER: 98AON09951H DESCRIPTION: PIM42 93X47 (PRESS FIT)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **==> picture [55 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> PAGE 1 OF 1<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [120 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> PIM42, 93x47 (SOLDER PIN)<br>CASE 180BS<br>ISSUE O<br>**----- End of picture text -----**<br> DATE 03 DEC 2019 **==> picture [200 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>XXXXXXXXXXXXXXXXXXXXXG<br>ATYYWW<br>XXXXX = Specific Device Code<br>G = Pb−Free Package<br>AT = Assembly & Test Site Code<br>YYWW= Year and Work Week Code<br>*This information is generic. Please refer to device data<br>sheet for actual part marking. Pb−Free indicator, “G” or<br>microdot “ ”, may or may not be present. Some products<br>may not follow the Generic Marking.<br>**----- End of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **==> picture [170 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NUMBER: 98AON15232H<br>**----- End of picture text -----**<br> ## **PIM42 93X47 (SOLDER PIN)** **PAGE 1 OF 1** **DESCRIPTION:** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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