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NXH160T120L2Q2F2SG
IGBT Module, PIM Half Bridge Inverter, 160 A, 2.15 V, 500 W, 150 °C, PIM
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- Manufacturer: ONSEMI
- Product type: IGBT Modules
- No. of Pins: 56Pins
- IGBT Technology: Trench Field Stop
- IGBT Termination: Solder
- Power Dissipation: 500W
- IGBT Configuration: PIM Half Bridge Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 160A
- Power Dissipation Pd: 500W
- Transistor Case Style: PIM
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 160A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 2.15V
- Collector Emitter Saturation Voltage Vce(on): 2.15V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 97.96 € |
| Current stock | 10+ |
| Lead time | 7 days |
Datasheet
## NXH160T120L2Q2F2SG ## Split T-Type NPC Power Module ## **1200 V, 160 A IGBT, 600 V, 100 A IGBT** The NXH160T120L2Q2F2SG is a power module containing a split T− type neutral point clamped three−level inverter, consisting of two 160 A / 1200 V Half Bridge IGBTs with inverse diodes, two Neutral Point 120 A / 600 V rectifiers, two 100 A / 600 V Neutral Point IGBTs with inverse diodes, two Half Bridge 60 A / 1200 V rectifiers and a negative temperature coefficient thermistor (NTC). ## **www.onsemi.com** - **Features** • Split T−type Neutral Point Clamped Three−level Inverter Module • 1200 V IGBT Specifications: VCE(SAT) = 2.15 V, ESW = 4300 J \ - 600 V IGBT specifications: VCE(SAT) = 1.47 V, ESW = 2560 J \ - Baseplate - Solderable Pins **Q2PACK CASE 180AK** - Thermistor ## **Typical Applications** ## **MARKING DIAGRAM** - Solar Inverters - Uninterruptible Power Supplies **==> picture [262 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 27−32 1−6<br>| pannawore T1<br>FREEWHEEL DIODEHALF BRIDGE D5 HALF BRIDGE 56 4 IGBT D1 HALF BRIDGEINVERSE DIODE<br>NEUTRAL POINT<br>| !| INVERSE DIODE D2 55<br>7−10 D6 44−49<br>FREEWHEEL DIODENEUTRAL POINT NEUTRAL T2<br>52 POINT IGBT<br>! ! 50 51<br>34 33<br>NEUTRALPOINT IGBT 35<br>ar NEUTRAL POINT<br>23−26 I | T3 FREEWHEEL DIODE 38−43<br>D7<br>T4<br>D3 NEUTRAL POINTINVERSE DIODE HALF BRIDGEIGBT D4 HALF BRIDGE D8<br>36 o_ HALF BRIDGEINVERSE DIODE FREEWHEEL DIODE<br>37<br>| TTT Te 53 54<br>NTC<br>17−22 11−16<br>**----- End of picture text -----**<br> **Figure 1. NXH160T120L2Q2F2SG Schematic Diagram** NXH160T120L2Q2F2SG ATYYWW NXH160T120L2Q2F2SG = Device Code YYWW = Year and Work Week Code A = Assembly Site Code T = Test Site Code G = Pb−Free Package ## **PIN CONNECTIONS** ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: **NXH160T120L2Q2/D** **1** © Semiconductor Components Industries, LLC, 2016 **December, 2017 − Rev. 0** ## **NXH160T120L2Q2F2SG** **Table 1. ABSOLUTE MAXIMUM RATINGS** (Note 1) TJ = 25 ° C unless otherwise noted |**Table 1. ABSOLUTE MAXIMUM RATINGS**(Note 1) TJ= 25°C unless|otherwise not|ed|| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |**HALF BRIDGE IGBT**|||| |Collector−Emitter Voltage|VCES|1200|V| |Gate−Emitter Voltage|VGE|±20|V| |Continuous Collector Current @ Th= 80°C ( TJ= 175°C)|IC|181|A| |Pulsed Collector Current (TJ= 175°C)|ICpulse|543|A| |Maximum Power Dissipation @ Th= 80°C (TJ= 175°C)|Ptot|500|W| |Short Circuit Withstand Time @ VGE= 15 V, VCE= 600 V, TJ ≤150°C|Tsc|5|�s| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|150|°C| |**NEUTRAL POINT IGBT**|||| |Collector−Emitter Voltage|VCES|600|V| |Gate−Emitter Voltage|VGE|±20|V| |Continuous Collector Current @ Th= 80°C (TJ= 175°C)|IC|116|A| |Pulsed Collector Current (TJ= 175°C)|ICpulse|348|A| |Maximum Power Dissipation @ Th= 80°C (TJ= 175°C)|Ptot|232|W| |Short Circuit Withstand Time @ VGE= 15 V, VCE= 400 V, TJ ≤150°C|Tsc|5|�s| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|150|°C| |**HALF BRIDGE FREEWHEEL DIODE**|||| |Peak Repetitive Reverse Voltage|VRRM|1200|V| |Continuous Forward Current @ Th= 80°C (TJ= 175°C)|IF|56|A| |Repetitive Peak Forward Current (TJ= 175°C, tplimited by TJmax)|IFRM|150|A| |Maximum Power Dissipation @ Th= 80°C (TJ= 175°C)|Ptot|142|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|150|°C| |**HALF BRIDGE INVERSE DIODE**|||| |Peak Repetitive Reverse Voltage|VRRM|1200|V| |Continuous Forward Current @ Th= 80°C (TJ= 175°C)|IF|19|A| |Repetitive Peak Forward Current (TJ= 175°C, tplimited by TJmax)|IFRM|50|A| |Maximum Power Dissipation @ Th= 80°C (TJ= 175°C)|Ptot|63|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|150|°C| |**NEUTRAL POINT FREEWHEEL DIODE**|||| |Peak Repetitive Reverse Voltage|VRRM|600|V| |Continuous Forward Current @ Th= 80°C (TJ= 175°C)|IF|132|A| |Repetitive Peak Forward Current (TJ= 175°C, tplimited by TJmax)|IFRM|300|A| |Maximum Power Dissipation @ Th= 80°C (TJ= 175°C)|Ptot|198|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|150|°C| |**NEUTRAL POINT INVERSE DIODE**|||| |Peak Repetitive Reverse Voltage|VRRM|600|V| |Continuous Forward Current @ Th= 80°C (TJ= 175°C)|IF|38|A| |Repetitive Peak Forward Current (TJ= 175°C, tplimited by TJmax)|IFRM|110|A| |Maximum Power Dissipation @ Th= 80°C (TJ= 175°C)|Ptot|79|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| **www.onsemi.com** **2** **NXH160T120L2Q2F2SG** **Table 1. ABSOLUTE MAXIMUM RATINGS** (Note 1) TJ = 25 ° C unless otherwise noted |**Table 1. ABSOLUTE MAXIMUM RATINGS**(Note 1) TJ= 25°C unless|otherwise not|ed|| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |**NEUTRAL POINT INVERSE DIODE**|||| |Maximum Operating Junction Temperature|TJMAX|150|°C| |**THERMAL PROPERTIES**|||| |Storage Temperature range|Tstg|−40 to 125|°C| |**INSULATION PROPERTIES**|||| |Isolation test voltage, t = 1 sec, 60Hz|Vis|3000|VRMS| |Creepage distance||12.7|mm| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. **Table 2. RECOMMENDED OPERATING RANGES** |**Table 2. RECOMMENDED OPERATING RANGES**||||| |---|---|---|---|---| |**Rating**|**Symbol**|**Min**|**Max**|**Unit**| |Module Operating Junction Temperature|TJ|−40|(Tjmax−25)|°C| |Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond<br>the Recommended Operating Ranges limits may affect device reliability.||||| **Table 3. ELECTRICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted |**Table 3. ELECTRICAL CHARACTERI**|**TICS**TJ= 25°C unless otherwise noted|||||| |---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**HALF BRIDGE IGBT CHARACTERISTICS**||||||| |Collector−Emitter Cutoff Current|VGE= 0 V, VCE= 1200 V|ICES|–|–|500|�A| |Collector−Emitter Saturation Voltage|VGE= 15 V, IC= 160 A, TJ= 25°C|VCE(sat)|–|2.15|2.7|V| ||VGE= 15 V, IC= 160 A, TJ= 150°C||–|2.08|–|| |Gate−Emitter Threshold Voltage|VGE= VCE, IC= 6 mA|VGE(TH)|–|5.53|6.4|V| |Gate Leakage Current|VGE= 20 V, VCE= 0 V|IGES|–|−|500|nA| |Turn−on Delay Time|TJ= 25°C<br>VCE= 350 V, IC= 100 A<br>VGE=±15 V, RG= 4�|td(on)|–|105|–|ns| |Rise Time||tr|–|50|–|| |Turn−off Delay Time||td(off)|–|270|–|| |Fall Time||tf|–|55|–|| |Turn−on Switching Loss per Pulse||Eon|–|1700|–|�J| |Turn off Switching Loss per Pulse||Eoff|–|2600|–|| |Turn−on Delay Time|TJ= 125°C<br>VCE= 350 V, IC= 100 A<br>VGE=±15 V, RG= 4�|td(on)|–|95|–|ns| |Rise Time||tr|–|55|–|| |Turn−off Delay Time||td(off)|–|285|–|| |Fall Time||tf|–|150|–|| |Turn−on Switching Loss per Pulse||Eon|–|2300|–|�J| |Turn off Switching Loss per Pulse||Eoff|–|4600|–|| |Input Capacitance|VCE= 25 V. VGE= 0 V. f = 10 kHz|Cies|–|38800|–|pF| |Output Capacitance||Coes|–|800|–|| |Reverse Transfer Capacitance||Cres|–|680|–|| |Total Gate Charge|VCE= 600 V, IC= 160 A, VGE= 15 V|Qg|–|1600|–|nC| |Thermal Resistance − chip−to−heatsink|Thermal grease, Thickness < 100�m,<br>�= 0.84 W/mK|RthJH|–|0.19|–|°C/W| **www.onsemi.com** **3** **NXH160T120L2Q2F2SG** **Table 3. ELECTRICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted |**Table 3. ELECTRICAL CHARACTERI**|**TICS**TJ= 25°C unless otherwise noted|||||| |---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**NEUTRAL POINT FREEWHEEL DIODE CHARACTERISTICS**||||||| |Diode Reverse Leakage Current|VR= 600 V|IR|–|−|100|�A| |Diode Forward Voltage|IF= 120 A, TJ= 25°C|VF|–|1.24|1.5|V| ||IF= 120 A, TJ= 150°C||–|1.20|–|| |Reverse Recovery Time|TJ= 25°C<br>VCE= 350 V, IC= 100 A<br>VGE=±15 V, RG= 4�|trr|–|50|–|ns| |Reverse Recovery Charge||Qrr|–|1700|–|nC| |Peak Reverse Recovery Current||IRRM|–|59|–|A| |Peak Rate of Fall of Recovery Current||di/dt|–|2500|–|A/�s| |Reverse Recovery Energy||Err|–|380|–|�J| |Reverse Recovery Time|TJ= 125°C<br>VCE= 350 V, IC= 100 A<br>VGE=±15 V, RG= 4�|trr|–|77|–|ns| |Reverse Recovery Charge||Qrr|–|3600|–|nC| |Peak Reverse Recovery Current||IRRM|–|77|–|A| |Peak Rate of Fall of Recovery Current||di/dt|–|1900|–|A/�s| |Reverse Recovery Energy||Err|–|780|–|�J| |Thermal Resistance − chip−to−heatsink|Thermal grease, Thickness < 100�m,<br>�= 0.84 W/mK|RthJH|–|0.48|–|°C/W| |**NEUTRAL POINT IGBT CHARACTERISTICS**||||||| |Collector−Emitter Cutoff Current|VGE= 0 V, VCE= 600 V|ICES|–|−|300|�A| |Collector−Emitter Saturation Voltage|VGE= 15 V, IC= 100 A, TJ= 25°C|VCE(sat)|–|1.47|1.8|V| ||VGE= 15 V, IC= 100 A, TJ= 150°C||–|1.50|–|| |Gate−Emitter Threshold Voltage|VGE= VCE, IC= 1.2 mA|VGE(TH)|–|5.30|6.4|V| |Gate Leakage Current|VGE= 20 V, VCE= 0 V|IGES|–|−|300|nA| |Turn−on Delay Time|TJ= 25°C<br>VCE= 350 V, IC= 100 A<br>VGE=±15 V, RG= 4�|td(on)|–|50|–|ns| |Rise Time||tr|–|35|–|| |Turn−off Delay Time||td(off)|–|135|–|| |Fall Time||tf|–|40|–|| |Turn−on Switching Loss per Pulse||Eon|–|870|–|�J| |Turn off Switching Loss per Pulse||Eoff|–|1690|–|| |Turn−on Delay Time|TJ= 125°C<br>VCE= 350 V, IC= 100 A<br>VGE=±15 V, RG= 4�|td(on)|–|50|–|ns| |Rise Time||tr|–|37|–|| |Turn−off Delay Time||td(off)|–|145|–|| |Fall Time||tf|–|65|–|| |Turn−on Switching Loss per Pulse||Eon|–|1300|–|�J| |Turn off Switching Loss per Pulse||Eoff|–|2500|–|| |Input Capacitance|VCE= 25 V, VGE= 0 V, f = 10 kHz|Cies|–|18800|–|pF| |Output Capacitance||Coes|–|560|–|| |Reverse Transfer Capacitance||Cres|–|500|–|| |Total Gate Charge|VCE= 480 V, IC= 80 A, VGE= 15 V|Qg|–|790|–|nC| |Thermal Resistance − chip−to−heatsink|Thermal grease, Thickness < 100�m,<br>�= 0.84 W/mK|RthJH|–|0.41|–|°C/W| **www.onsemi.com** **4** **NXH160T120L2Q2F2SG** **Table 3. ELECTRICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted |**Table 3. ELECTRICAL CHARACTERI**|**Table 3. ELECTRICAL CHARACTERI**|**TICS**TJ= 25°C unless otherwise noted|**TICS**TJ= 25°C unless otherwise noted||||||| |---|---|---|---|---|---|---|---|---|---| |**Parameter**||**Test Conditions**||**Symbol**|**Min**||**Typ**|**Max**|**Unit**| |**HALF BRIDGE FREEWHEEL DIODE CHARACTERISTICS**|||||||||| |Diode Reverse Leakage Current||VR= 1200 V||IR|–||–|100|�A| |Diode Forward Voltage||IF= 60 A, TJ= 25°C||VF|–||2.63|3.3|V| |||IF= 60 A, TJ= 150°C|||–||2.12|–|| |Reverse Recovery Time||TJ= 25°C<br>VCE= 350 V, IC= 100 A<br>VGE=±15 V, RG= 4�||trr|–||320|–|ns| |Reverse Recovery Charge||||Qrr|–||3700|–|nC| |Peak Reverse Recovery Current||||IRRM|–||68|–|A| |Peak Rate of Fall of Recovery Current||||di/dt|–||3000|–|A/�s| |Reverse Recovery Energy||||Err|–||1150|–|�J| |Reverse Recovery Time||TJ= 125°C<br>VCE= 350 V, IC= 100 A<br>VGE=±15 V, RG= 4�||trr|–||520|–|ns| |Reverse Recovery Charge||||Qrr|–||9000|–|nC| |Peak Reverse Recovery Current||||IRRM|–||102|–|A| |Peak Rate of Fall of Recovery Current||||di/dt|–||2600|–|A/�s| |Reverse Recovery Energy||||Err|–||2750|–|�J| |Thermal Resistance − chip−to−heatsink||Thermal grease, Thickness < 100�m,<br>�= 0.84 W/mK||RthJH|–||0.67|–|°C/W| |**HALF BRIDGE INVERSE DIODE CHARACTERISTICS**|||||||||| |Diode Forward Voltage||IF= 7 A, TJ= 25°C||VF|–||1.92|2.80|V| |||IF= 7 A, TJ= 150°C|||−||1.37|−|| |Thermal Resistance − chip−to−heatsink||Thermal grease, Thickness < 100�m,<br>�= 0.84 W/mK||RthJH|–||1.52|–|°C/W| |**NEUTRAL POINT INVERSE DIODE CHARACTERISTICS**|||||||||| |Diode Forward Voltage||IF= 30 A, TJ= 25°C||VF|–||2.24|2.75|V| |||IF= 30 A, TJ= 150°C|||−||1.60|−|| |Thermal Resistance − chip−to−heatsink||Thermal grease, Thickness 100�m,<br>�= 0.84 W/mK||RthJH|–||1.21|–|°C/W| |**THERMISTOR CHARACTERISTICS**|||||||||| |Nominal resistance||||R25|−||22|−|k�| |Nominal resistance||T = 100°C||R100|−||1486|−|�| |Deviation of R25||||�R/R|−5||−|5|%| |Power dissipation||||PD|−||200|−|mW| |Power dissipation constant|||||−||2|−|mW/K| |B−value||B(25/50), tolerance±3%|||−||3950|−|K| |B−value||B(25/100), tolerance±3%|||−||3998|−|K| |**ORDERING INFORMATION**|||||||||| |**Device**||**Marking**|**Package**|||||**Shipping**|| |NXH160T120L2Q2F2SG<br>Q2PACK|NXH160T120L2Q2F2SG||Q2PACK − Case 180AK<br>(Pb−Free and Halide−Free)||||12 Units / Blister Tray||| **www.onsemi.com** **5** **NXH160T120L2Q2F2SG** ## **TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode** **==> picture [489 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 350 350<br>17 V to 11 V 17 V to 11 V<br>10 V 10 V<br>300 300<br>TJ = 150 ° C<br>250 250<br>TJ = 25 ° C 9 V<br>200 200<br>9 V<br>150 150<br>8 V<br>100 100<br>8 V<br>50 50 7 V<br>7 V<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 1. IGBT Typical Output Characteristics Figure 2. IGBT Typical Output Characteristics<br>300 200<br>270<br>240<br>150<br>210<br>180<br>150 100<br>120<br>90 TJ = 150 ° C<br>60 T J = 25 ° C 50 TJ = 150 ° C<br>30 TJ = 25 ° C<br>0 0<br>0 2 4 6 8 10 12 0 0.5 1.0 1.5 2.0 2.5<br>VGE, GATE−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)<br>Figure 3. IGBT Typical Transfer Figure 4. Diode Forward Characteristic<br>Characteristics<br>4000 8000<br>3500 VVGECE = 350 V = ± 15 V 125 ° C 7000 VVGECE = 350 V= ± 15 V 125 ° C<br>3000 RG = 4 � 6000 RG = 4 �<br>2500 25 ° C 5000<br>25 ° C<br>2000 4000<br>1500 3000<br>1000 2000<br>500 1000<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>, FORWARD CURRENT (A)<br>, COLLECTOR CURRENT (A)IC IF<br>J)<br>J) �<br>�<br>, TURN ON LOSS ( , TURN OFF LOSS (<br>EON OFF<br>E<br>**----- End of picture text -----**<br> **Figure 5. Typical Turn On Loss vs. IC** **Figure 6. Typical Turn Off Loss vs. IC** **www.onsemi.com** **6** **NXH160T120L2Q2F2SG** ## **TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode** **==> picture [490 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 400 140<br>VGE = ± 15 V<br>350 V CE = 350 V 120 Td(on) @ 25 ° C<br>Td(off) @ 125 ° C RG = 4 �<br>300<br>250 T d(off) @ 25 ° C 100 Td(on) @ 125 ° C<br>200 ° 80 tr @ 125 ° C<br>tf @ 125 C<br>60<br>150 tr @ 25 ° C<br>40<br>100<br>50 tf @ 25 ° C 20 V V GECE = 350 V = ± 15 V<br>RG = 4 �<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 7. Typical Turn On Loss vs. IC Figure 8. Typical Turn Off Loss vs. IC<br>100 5000<br>90 VV GE CE = 350 V= ± 15 V 125 ° C 4500 125 ° C<br>80 R G = 4 � 4000<br>70 3500<br>60 25 ° C 3000<br>50 2500 25 ° C<br>40 2000<br>30 1500<br>20 1000 VGE = ± 15 V<br>VCE = 350 V<br>10 500 RG = 4 �<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 9. Typical Reverse Recovery Time vs. Figure 10. Typical Reverse Recovery Charge<br>IC vs. IC<br>100 4000<br>90 125 ° C VGE = ± 15 V<br>80 30003500 RVCEG = = 350 V 4 � 25 ° C<br>70<br>25 ° C 2500<br>60 125 ° C<br>50 2000<br>40<br>1500<br>30<br>1000<br>20 V GE = ± 15 V<br>10 RVCEG = 4 = 350 V � 500<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>TIME (ns) TIME (ns)<br>, REVERSE RECOVERY TIME (ns)<br>trr , REVERSE RECOVERY CHARGE (nC)<br>rr<br>Q<br>s)<br>�<br>, REVERSE RECOVERY CURRENT (A)<br>di/dt, DIODE CURRENT SLOPE (A/<br>Irrm<br>**----- End of picture text -----**<br> **Figure 11. Typical Reverse Recovery Peak Current vs. IC** **Figure 12. Typical Diode Current Slope vs. IC** **www.onsemi.com** **7** **NXH160T120L2Q2F2SG** ## **TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode** **==> picture [492 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 16<br>1000 VVGE CE = 350 V = ± 15 V 125 ° C 14 VICCE = 160 A = 600 V<br>RG = 4 � 12<br>800<br>10<br>600 25 ° C 8<br>6<br>400<br>4<br>200<br>2<br>0 0<br>0 50 100 150 200 0 500 1000 1500 2000<br>IC, COLLECTOR CURRENT (A) QG, GATE CHARGE (nC)<br>Figure 13. Typical Reverse Recovery Energy Figure 14. Gate Voltage vs. Gate Charge<br>vs. IC<br>10<br>1<br>DUT = 50%<br>0.1<br>30%<br>10%<br>0.01<br>5%<br>2%<br>0.001 1%<br>0.0001<br>Single Pulse<br>0.00001<br>1.0E−06 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01<br>ON−PULSE WIDTH (s)<br>Figure 15. IGBT Transient Thermal Impedance<br>10<br>1<br>DUT = 50%<br>0.1 30%<br>10%<br>5%<br>0.01 2%<br>1%<br>0.001<br>0.0001<br>Single Pulse<br>0.00001<br>1.0E−06 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01<br>ON−PULSE WIDTH (s)<br>J)<br>�<br>, GATE VOLTAGE (V)<br>GE<br>V<br>, REVERSE RECOVERY ENERGY (<br>rr<br>E<br>C/W)<br>°<br>R(t), SQUARE−WAVE PEAK (<br>C/W)<br>°<br>R(t), SQUARE−WAVE PEAK (<br>**----- End of picture text -----**<br> **Figure 16. Diode Transient Thermal Impedance** **www.onsemi.com** **8** **NXH160T120L2Q2F2SG** ## **TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode** **==> picture [490 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 300 150<br>TJ = 25 ° C 17 V to 12 V 17 V to 10 V<br>250 11 V TJ = 150 ° C<br>120 9 V<br>200<br>90<br>10 V<br>150<br>8 V<br>60<br>100 9 V<br>50 30 7 V<br>8 V<br>7 V<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 17. IGBT Typical Output Characteristics Figure 18. IGBT Typical Output Characteristics<br>150 200<br>120<br>150<br>90<br>100<br>60<br>50<br>30 TJ = 150 ° C TJ = 25 ° C TJ = 150 ° C TJ = 25 ° C<br>0 0<br>0 2 4 6 8 10 12 0 1 2 3 4 5 6<br>VGE, GATE−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)<br>Figure 19. IGBT Typical Transfer Figure 20. Diode Forward Characteristic<br>Characteristics<br>2000 5000<br>1800 V GE = ± 15 V 125 ° C 4500 V GE = ± 15 V 125 ° C<br>VCE = 350 V VCE = 350 V<br>1600 R G = 4 � 4000 RG = 4 �<br>1400 3500<br>1200 25 ° C 3000 25 ° C<br>1000 2500<br>800 2000<br>600 1500<br>400 1000<br>200 500<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>, FORWARD CURRENT (A)<br>, COLLECTOR CURRENT (A)IC IF<br>J)<br>J) �<br>�<br>, TURN ON LOSS ( , TURN OFF LOSS (<br>EON OFF<br>E<br>**----- End of picture text -----**<br> **Figure 21. Typical Turn On Loss vs. IC** **Figure 22. Typical Turn Off Loss vs. IC** **www.onsemi.com** **9** **NXH160T120L2Q2F2SG** ## **TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode** **==> picture [491 x 617] intentionally omitted <==** **----- Start of picture text -----**<br> 180 70<br>160 T d(off) @ 125 ° C<br>60<br>140<br>120 Td(off) @ 25 ° C 50 T d(on) @ 25 ° C<br>100 VGE = ± 15 V 40<br>80 tf @ 125 ° C R VCE G = 4 = 350 V � 30 trT @ 125d(on) @ 125 ° C ° C<br>60<br>40 tf @ 25 ° C 20 tr @ 25 ° C VGE = ± 15 V<br>20 10 V CE = 350 V<br>RG = 4 �<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 23. Typical Turn On Loss vs. IC Figure 24. Typical Switching Times vs. IC<br>800 14,000<br>700 VVGECE = 350 V = ± 15 V 125 ° C 12,000 V V GECE = 350 V = ± 15 V 125 ° C<br>600 RG = 4 � RG = 4 �<br>10,000<br>500<br>25 ° C 8000<br>400<br>300 6000 25 ° C<br>4000<br>200<br>100 2000<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 25. Typical Reverse Recovery Time vs. Figure 26. Typical Reverse Recovery Charge<br>IC vs. IC<br>140 4000<br>120 125 ° C 3500 VRVGE CE G = 4 = 350 V = ±� 15 V 25 ° C<br>100<br>3000<br>80 25 ° C 125 ° C<br>2500<br>60<br>2000<br>40<br>VGE = ± 15 V<br>20 V CE = 350 V 1500<br>RG = 4 �<br>0 1000<br>0 50 100 150 200 0 50 100 150 200<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 27. Typical Reverse Recovery Peak Figure 28. Typical Diode Current Slope vs. IC<br>Current vs. IC<br>TIME (ns) TIME (ns)<br>, REVERSE RECOVERY TIME (ns)<br>trr , REVERSE RECOVERY CHARGE (nC)<br>rr<br>Q<br>s)<br>�<br>, REVERSE RECOVERY CURRENT (A)<br>di/dt, DIODE CURRENT SLOPE (A/<br>Irrm<br>**----- End of picture text -----**<br> **www.onsemi.com** **10** **NXH160T120L2Q2F2SG** ## **TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode** **==> picture [492 x 593] intentionally omitted <==** **----- Start of picture text -----**<br> 4500 16<br>4000 VVGECE = 350 V = ± 15 V 125 ° C 14 VICCE = 80 A = 480 V<br>3500 RG = 4 �<br>12<br>3000<br>10<br>2500<br>8<br>2000<br>25 ° C 6<br>1500<br>4<br>1000<br>500 2<br>0 0<br>0 50 100 150 200 0 200 400 600 800 1000<br>IC, COLLECTOR CURRENT (A) QG, GATE CHARGE (nC)<br>Figure 29. Typical Reverse Recovery Energy Figure 30. Gate Voltage vs. Gate Charge<br>vs. IC<br>10<br>1<br>DUT = 50%<br>0.1 30%<br>10%<br>5%<br>0.01<br>2%<br>1%<br>0.001<br>0.0001<br>Single Pulse<br>0.00001<br>1.0E−06 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01<br>ON−PULSE WIDTH (s)<br>Figure 31. IGBT Transient Thermal Impedance<br>10<br>1<br>DUT = 50%<br>30%<br>0.1<br>10%<br>5%<br>0.01 2%<br>1%<br>0.001<br>Single Pulse<br>0.0001<br>1.0E−06 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01<br>ON−PULSE WIDTH (s)<br>J)<br>�<br>, GATE VOLTAGE (V)<br>GE<br>V<br>, REVERSE RECOVERY ENERGY (<br>rr<br>E<br>C/W)<br>°<br>R(t), SQUARE−WAVE PEAK (<br>C/W)<br>°<br>R(t), SQUARE−WAVE PEAK (<br>**----- End of picture text -----**<br> **Figure 32. Diode Transient Thermal Impedance** **www.onsemi.com** **11** **NXH160T120L2Q2F2SG** ## **TYPICAL CHARACTERISTICS − Half Bridge IGBT Protection Diode** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>150 ° C 25 ° C<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5 6<br>VF, FORWARD VOLTAGE (V)<br>, FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 33. Diode Forward Characteristic** **==> picture [492 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>DUT = 50%<br>1<br>30%<br>0.1 10%<br>5%<br>2%<br>0.01 1%<br>0.001<br>Single Pulse<br>0.0001<br>1.0E−06 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01<br>ON−PULSE WIDTH (s)<br>C/W)<br>°<br>R(t), SQUARE−WAVE PEAK (<br>**----- End of picture text -----**<br> **Figure 34. Diode Transient Thermal Impedance** **www.onsemi.com** **12** **NXH160T120L2Q2F2SG** ## **TYPICAL CHARACTERISTICS − Neutral Point IGBT Protection Diode** **==> picture [238 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90 150 ° C 25 ° C<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 1 2 3 4<br>VF, FORWARD VOLTAGE (V)<br>, FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 35. Diode Forward Characteristic** **==> picture [491 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1 DUT = 50%<br>30%<br>0.1 10%<br>5%<br>2%<br>0.01 1%<br>0.001<br>Single Pulse<br>0.0001<br>1.0E−06 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01<br>ON−PULSE WIDTH (s)<br>C/W)<br>°<br>R(t), SQUARE−WAVE PEAK (<br>**----- End of picture text -----**<br> **Figure 36. Diode Transient Thermal Impedance** ## **TYPICAL CHARACTERISTICS − Thermistor** **==> picture [240 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 24K<br>20K<br>16K<br>12K<br>8K<br>4K<br>0<br>25 45 65 85 105 125<br>TEMPERATURE ( ° C)<br>) �<br>RESISTANCE (<br>**----- End of picture text -----**<br> **Figure 37. Thermistor Characteristics** **www.onsemi.com** **13** **==> picture [135 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> NXH160T120L2Q2F2SG<br>PACKAGE DIMENSIONS<br>PIM56, 93x47 (SOLDER PIN)<br>CASE 180AK<br>ISSUE B<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Updated at February 9, 2023
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