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NX3008CBKV,115
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 400 mA, 400 mA, 1 ohm
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- Manufacturer: NEXPERIA
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-666
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 330mW
- Power Dissipation P Channel: 330mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 400mA
- Continuous Drain Current Id P Channel: 400mA
- Drain Source On State Resistance N Channel: 1ohm
- Drain Source On State Resistance P Channel: 1ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.087 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **NX3008CBKV** ## **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **Rev. 1 — 29 July 2011** **Product data sheet** ## **1. Product profile** ## **1.1 General description** Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ## **1.2 Features and benefits** - Low threshold voltage - Very fast switching - ESD protection up to 2 kV - AEC-Q101 qualified - Trench MOSFET technology ## **1.3 Applications** - Level shifter - Power supply converter - Load switch - Switching circuits ## **1.4 Quick reference data** ## **Table 1. Quick reference data** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**TR2 (P-channel)**|||||||| |VDS|drain-source voltage|Tj= 25 °C||-|-|-30|V| |VGS|gate-source voltage|||-8|-|8|V| |ID|drain current|VGS= -4.5 V; Tamb= 25 °C|[1]|-|-|-220|mA| |**TR1 (N-channel)**|||||||| |VDS|drain-source voltage|Tj= 25 °C||-|-|30|V| |VGS|gate-source voltage|||-8|-|8|V| |ID|drain current|VGS= 4.5 V; Tamb= 25 °C|[1]|-|-|400|mA| |**TR1 (N-channel), Static characteristics**|||||||| |RDSon|drain-source on-state|VGS= 4.5 V; ID= 350 mA;||-|1|1.4|Ω| ||resistance|Tj= 25 °C|||||| |**TR2 (P-channel), Static characteristics**|||||||| |RDSon|drain-source on-state|VGS= -4.5 V; ID= -200 mA;||-|2.8|4.1|Ω| ||resistance|Tj= 25 °C|||||| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm[2] . **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** ## **2. Pinning information** ## **Table 2. Pinning information** |**Pin**<br>**Symbol**<br>**Description**<br>**Simplified outline**<br>**Graphic symbol**|**Pin**<br>**Symbol**<br>**Description**<br>**Simplified outline**<br>**Graphic symbol**| |---|---| |1<br>S1<br>source TR1<br>**SOT666 (SOT666)**<br>2<br>G1<br>gate TR1<br>3<br>D2<br>drain TR2<br>4<br>S2<br>source TR2<br>5<br>G2<br>gate TR2<br>6<br>D1<br>drain TR1<br>1<br>2<br>3<br>4<br>5<br>6<br>G1|_017aaa262_<br>D1<br>S1<br>D2<br>S2<br>G2| ## **3. Ordering information** ## **Table 3. Ordering information** |**Type number**|**Package**| |---|---| ||**Name**<br>**Description**<br>**Version**| |NX3008CBKV|SOT666<br>plastic surface-mounted package; 6 leads<br>SOT666| ## **4. Marking** |**Table 4.**<br>**Marking codes**|| |---|---| |**Type number**|**Marking code[1]**| |NX3008CBKV|AC| [1] % = placeholder for manufacturing site code. NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 29 July 2011** © Nexperia B.V. 2017. All rights reserved **2 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** ## **5. Limiting values** ## **Table 5. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Max**<br>**Unit**| |---|---|---| |**TR2 (P-channel)**||| |VDS<br>drain-source voltage|Tj= 25 °C|-<br>-30<br>V| |VGS<br>gate-source voltage||-8<br>8<br>V| |ID<br>drain current|VGS= -4.5 V; Tamb= 25 °C|[1]<br>-<br>-220<br>mA| ||VGS= -4.5 V; Tamb= 100 °C|[1]<br>-<br>-140<br>mA| |IDM<br>peak drain current|Tamb= 25 °C; single pulse; tp≤10 µs|-<br>-0.9<br>A| |Ptot<br>total power dissipation|Tamb= 25 °C|[2]<br>-<br>330<br>mW| |||[1]<br>-<br>390<br>mW| ||Tsp= 25 °C|-<br>1090<br>mW| |**TR1 (N-channel)**||| |VDS<br>drain-source voltage|Tj= 25 °C|-<br>30<br>V| |VGS<br>gate-source voltage||-8<br>8<br>V| |ID<br>drain current|VGS= 4.5 V; Tamb= 25 °C|[1]<br>-<br>400<br>mA| ||VGS= 4.5 V; Tamb= 100 °C|[1]<br>-<br>260<br>mA| |IDM<br>peak drain current|Tamb= 25 °C; single pulse; tp≤10 µs|-<br>1.6<br>A| |Ptot<br>total power dissipation|Tamb= 25 °C|[2]<br>-<br>330<br>mW| |||[1]<br>-<br>390<br>mW| ||Tsp= 25 °C|-<br>1090<br>mW| |**Per device**||| |Ptot<br>total power dissipation|Tamb= 25 °C|[2]<br>-<br>500<br>mW| |Tj<br>junction temperature||-55<br>150<br>°C| |Tamb<br>ambient temperature||-55<br>150<br>°C| |Tstg<br>storage temperature||-65<br>150<br>°C| |**TR1 (N-channel), Source-drain diode**||| |IS<br>source current|Tamb= 25 °C|[1]<br>-<br>400<br>mA| |**TR2 (P-channel), Source-drain diode**||| |IS<br>source current|Tamb= 25 °C|[1]<br>-<br>-220<br>mA| |**TR1 N-channel), ESD maximum rating**||| |VESD<br>electrostatic discharge voltage|HBM|[3]<br>-<br>2000<br>V| |**TR2 (P-channel), ESD maximum rating**||| |VESD<br>electrostatic discharge voltage|HBM|[3]<br>-<br>2000<br>V| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm[2] . [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [3] Measured between all pins. NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 29 July 2011** © Nexperia B.V. 2017. All rights reserved **3 of 21** **NX3008CBKV** **Nexperia** ## **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [462 x 455] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao121 001aao122<br>120 120<br>Pder Ider<br>(%) (%)<br>80 80<br>TTTN TTT TTI TE<br>40 TLTENLITE TE 40 CCCEEENEP<br>NTT TTT TEIN<br>0 0<br>-75 LT -25 TET 25 TY 75 N 125 175 -75 TT -25 TT 25 [TET] 75 125 EL 175<br>Tj (°C) Tj (°C)<br>Pie Prot Ip<br>Fas See fie “Tog ee<br>Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a<br>function of junction temperature function of junction temperature<br>001aao252<br>10<br>lD<br>(A) pt tt ttt<br>1 a nh<br>(1)<br>PSSST<br>10 [-1] SRST<br>(2)<br>(3)<br>(4)<br>10 [-2] eeSare e s (5) et ll<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; 1 cm[2] drain mounting pad **Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage** NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **4 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [361 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao254<br>-10<br>lD<br>(A)<br>-1<br>(1)<br>-10 [-1]<br>(2)<br>(3)<br>(4)<br>(5)<br>-10 [-2]<br>-10 [-1] -1 -10 -10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; 1 cm[2] drain mounting pad **Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage** ## **6. Thermal characteristics** ## **Table 6. Thermal characteristics** |**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**Per device**|| |Rth(j-a)<br>thermal resistance from junction to ambient<br>in free air|[1]<br>-<br>-<br>250<br>K/W| |**TR1 (N-channel)**|| |Rth(j-a)<br>thermal resistance from junction to ambient<br>in free air|[1]<br>-<br>330<br>380<br>K/W| ||[2]<br>-<br>280<br>320<br>K/W| |Rth(j-sp)<br>thermal resistance from junction to solder point|-<br>-<br>115<br>K/W| |**TR2 (P-channel)**|| |Rth(j-a)<br>thermal resistance from junction to ambient<br>in free air|[1]<br>-<br>330<br>380<br>K/W| ||[2]<br>-<br>280<br>320<br>K/W| |Rth(j-sp)<br>thermal resistance from junction to solder point|-<br>-<br>115<br>K/W| [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm[2] . NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **5 of 21** **Rev. 1 — 29 July 2011** **NX3008CBKV** **Nexperia** ## **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa064<br>10 [3]<br>Zth(j-a) duty cycle = 1<br>(K/W) 0.75<br>0.5<br>0.33<br>10 [2] 0.25 0.2<br>0.1 0.05<br>0 0.02<br>10 0.01<br>1<br>10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, standard footprint **Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa065<br>10 [3]<br>Zth(j-a) duty cycle = 1<br>(K/W)<br>0.75<br>0.5<br>0.33<br>10 [2]<br>0.25 0.2<br>0.1 0.05<br>0 0.02<br>10 0.01<br>1<br>10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, mounting pad for drain 1 cm[2] **Fig 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **6 of 21** **NX3008CBKV** **Nexperia** ## **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa064<br>10 [3]<br>Zth(j-a) duty cycle = 1<br>(K/W) 0.75<br>0.5<br>0.33<br>10 [2] 0.25 0.2<br>0.1 0.05<br>0 0.02<br>10 0.01<br>1<br>10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, standard footprint **Fig 7. TR2, Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa065<br>10 [3]<br>Zth(j-a) duty cycle = 1<br>(K/W)<br>0.75<br>0.5<br>0.33<br>10 [2]<br>0.25 0.2<br>0.1 0.05<br>0 0.02<br>10 0.01<br>1<br>10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, mounting pad for drain 1 cm[2] **Fig 8. TR2, Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **7 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** ## **7. Characteristics** |**Table 7.**<br>**Characteristics**|**Table 7.**<br>**Characteristics**|| |---|---|---| |**Symbol**<br>**Parameter**<br>**Conditions**||**Min**<br>**Typ**<br>**Max**<br>**Unit**| |**TR2 (P-channel), Static characteristics**||| |V(BR)DSS<br>drain-source<br>breakdown voltage|ID= -250 µA; VGS= 0 V; Tj= 25 °C|-30<br>-<br>-<br>V| |VGSth<br>gate-source threshold<br>voltage|ID= -250 µA; VDS= VGS; Tj= 25 °C|-0.6<br>-0.9<br>-1.1<br>V| |IDSS<br>drain leakage current|VDS= -30 V; VGS= 0 V; Tj= 25 °C|-<br>-<br>-1<br>µA| ||VDS= -30 V; VGS= 0 V; Tj= 150 °C|-<br>-<br>-10<br>µA| |IGSS<br>gate leakage current|VGS= 8 V; VDS= 0 V; Tj= 25 °C|-<br>-0.2<br>-1<br>µA| ||VGS= -8 V; VDS= 0 V; Tj= 25 °C|-<br>-0.2<br>-1<br>µA| ||VGS= 4.5 V; VDS= 0 V; Tj= 25 °C|-<br>-10<br>-<br>nA| ||VGS= -4.5 V; VDS= 0 V; Tj= 25 °C|-<br>-10<br>-<br>nA| ||VGS= 2.5 V; VDS= 0 V; Tj= 25 °C|-<br>-1<br>-<br>nA| ||VGS= -2.5 V; VDS= 0 V; Tj= 25 °C|-<br>-1<br>-<br>nA| |RDSon<br>drain-source on-state<br>resistance|VGS= -4.5 V; ID= -200 mA; Tj= 25 °C|-<br>2.8<br>4.1<br>Ω| ||VGS= -2.5 V; ID= -10 mA; Tj= 25 °C|-<br>5.3<br>6.5<br>Ω| ||VGS= -4.5 V; ID= -200 mA; Tj= 150 °C|-<br>5.3<br>7.8<br>Ω| |gfs<br>transfer conductance|VDS= -10 V; ID= -200 mA; Tj= 25 °C|-<br>160<br>-<br>mS| |**TR1 (N-channel), Static characteristics**||| |V(BR)DSS<br>drain-source<br>breakdown voltage|ID= 250 µA; VGS= 0 V; Tj= 25 °C|30<br>-<br>-<br>V| |VGSth<br>gate-source threshold<br>voltage|ID= 250 µA; VDS= VGS; Tj= 25 °C|0.6<br>0.9<br>1.1<br>V| |IDSS<br>drain leakage current|VDS= 30 V; VGS= 0 V; Tj= 25 °C|-<br>-<br>1<br>µA| ||VDS= 30 V; VGS= 0 V; Tj= 150 °C|-<br>-<br>10<br>µA| |IGSS<br>gate leakage current|VGS= 8 V; VDS= 0 V; Tj= 25 °C|-<br>0.2<br>1<br>µA| ||VGS= -8 V; VDS= 0 V; Tj= 25 °C|-<br>0.2<br>1<br>µA| ||VGS= 4.5 V; VDS= 0 V; Tj= 25 °C|-<br>10<br>-<br>nA| ||VGS= -4.5 V; VDS= 0 V; Tj= 25 °C|-<br>10<br>-<br>nA| ||VGS= 2.5 V; VDS= 0 V; Tj= 25 °C|-<br>1<br>-<br>nA| ||VGS= -2.5 V; VDS= 0 V; Tj= 25 °C|-<br>1<br>-<br>nA| |RDSon<br>drain-source on-state<br>resistance|VGS= 4.5 V; ID= 350 mA; Tj= 25 °C|-<br>1<br>1.4<br>Ω| ||VGS= 4.5 V; ID= 350 mA; Tj= 150 °C|-<br>1.8<br>2.5<br>Ω| ||VGS= 2.5 V; ID= 200 mA; Tj= 150 °C|-<br>1.4<br>2.1<br>Ω| ||VGS= 1.8 V; ID= 10 mA; Tj= 25 °C|-<br>2<br>2.8<br>Ω| |gfs<br>transfer conductance|VDS= 10 V; ID= 350 mA; Tj= 25 °C|-<br>310<br>-<br>mS| |**TR1 (N-channel), Dynamic characteristics**||| |QG(tot)<br>total gate charge<br>VDS= 15 V; ID= 400 mA; VGS= 4.5 V;<br>Tj= 25 °C<br>QGS<br>gate-source charge<br>QGD<br>gate-drain charge||-<br>0.52<br>0.68<br>nC| |||-<br>0.17<br>-<br>nC| |||-<br>0.08<br>-<br>nC| All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved NX3008CBKV **Product data sheet** **Rev. 1 — 29 July 2011** **8 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **Table 7. Characteristics** _…continued_ |**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |Ciss<br>input capacitance<br>VDS= 15 V; f = 1 MHz; VGS= 0 V;<br>Tj= 25 °C<br>Coss<br>output capacitance<br>Crss<br>reverse transfer<br>capacitance|-<br>34<br>50<br>pF| ||-<br>6.5<br>-<br>pF| ||-<br>2.2<br>-<br>pF| |td(on)<br>turn-on delay time<br>VDS= 20 V; RL= 250 Ω; VGS= 4.5 V;<br>RG(ext)= 6 Ω; Tj= 25 °C<br>tr<br>rise time<br>td(off)<br>turn-off delay time<br>tf<br>fall time|-<br>15<br>30<br>ns| ||-<br>11<br>-<br>ns| ||-<br>69<br>138<br>ns| ||-<br>19<br>-<br>ns| |**TR2 (P-channel), Dynamic characteristics**|| |QG(tot)<br>total gate charge<br>VDS= -15 V; ID= -200 mA;<br>VGS= -4.5 V; Tj= 25 °C<br>QGS<br>gate-source charge<br>QGD<br>gate-drain charge|-<br>0.55<br>0.72<br>nC| ||-<br>0.23<br>-<br>nC| ||-<br>0.09<br>-<br>nC| |Ciss<br>input capacitance<br>VDS= -15 V; f = 1 MHz; VGS= 0 V;<br>Tj= 25 °C<br>Coss<br>output capacitance<br>Crss<br>reverse transfer<br>capacitance|-<br>31<br>46<br>pF| ||-<br>6.5<br>-<br>pF| ||-<br>2.3<br>-<br>pF| |td(on)<br>turn-on delay time<br>VDS= -20 V; RL= 250 Ω; VGS= -4.5 V;<br>RG(ext)= 6 Ω; Tj= 25 °C<br>tr<br>rise time<br>td(off)<br>turn-off delay time<br>tf<br>fall time|-<br>19<br>38<br>ns| ||-<br>30<br>-<br>ns| ||-<br>65<br>130<br>ns| ||-<br>38<br>-<br>ns| |**TR2 (P-channel), Source-drain diode characteristics**|| |VSD<br>source-drain voltage<br>IS= -200 mA; VGS= 0 V; Tj= 25 °C|-0.47<br>-0.88<br>-1.2<br>V| |**TR1 (N-channel), Source-drain diode characteristics**|| |VSD<br>source-drain voltage<br>IS= 350 mA; VGS= 0 V; Tj= 25 °C|0.47<br>0.85<br>1.2<br>V| NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **9 of 21** **NX3008CBKV** **Nexperia** ## **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [497 x 522] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao267 001aao268<br>0.4 10 [-3]<br>4.5 V<br>(A)ID 2.5 V 2 V ID<br>(A)<br>0.3<br>(1) (2) (3)<br>10 [-4]<br>1.75 V<br>0.2<br>10 [-5]<br>0.1 1.5 V<br> VGS = 1.25 V<br>0.0 10 [-6]<br>0 1 2 3 4 0.0 0.5 1.0 1.5<br>VDS (V) VGS (V)<br>Tj = 25 °C Tj = 25 °C; VDS = 5 V<br>(1) minimum values<br>(2) typical values<br>(3) maximum values<br>Fig 9. TR1: Output characteristics: drain current as a Fig 10. TR1: Sub-threshold drain current as a function<br>function of drain-source voltage; typical values of gate-source voltage<br>001aao269 001aao270<br>6 6<br>RDS (on)DS (on)(on) RDS (on)DS (on)(on)<br>(Ω) (Ω)<br>(1) (2) (3)<br>4 4<br>2 (4) 2 (1)<br>(5) (2)<br>(6)<br>0 0<br>0.0 0.1 0.2 0.3 0.4 0 1 2 3 4 5<br>ID (A)D (A) (A) VGS (V)GS (V) (V)<br>Tj = 25 °Cj = 25 °C = 25 °C ID = 400 mAD = 400 mA = 400 mA<br>(1) VGS = 1.5 VGS = 1.5 V = 1.5 V (1) Tj = 150 °Cj = 150 °C = 150 °C<br>(2) VGS = 1.75 VGS = 1.75 V = 1.75 V (2) Tj = 25 °Cj = 25 °C = 25 °C<br>**----- End of picture text -----**<br> **==> picture [480 x 314] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao269 001aao270<br>6 6<br>RDS (on)DS (on)(on) RDS (on)DS (on)(on)<br>(Ω) (Ω)<br>(1) (2) (3)<br>4 4<br>2 (4) 2 (1)<br>(5) (2)<br>(6)<br>0 0<br>0.0 0.1 0.2 0.3 0.4 0 1 2 3 4 5<br>ID (A)D (A) (A) VGS (V)GS (V) (V)<br>Tj = 25 °Cj = 25 °C = 25 °C ID = 400 mAD = 400 mA = 400 mA<br>(1) VGS = 1.5 VGS = 1.5 V = 1.5 V (1) Tj = 150 °Cj = 150 °C = 150 °C<br>(2) VGS = 1.75 VGS = 1.75 V = 1.75 V (2) Tj = 25 °Cj = 25 °C = 25 °C<br>(3) VGS = 2.0 V<br>(4) VGS = 2.25 V<br>(5) VGS = 2.5 V<br>(6) VGS = 4.5 V<br>Fig 11. TR1: Drain-source on-state resistance as a Fig 12. TR1: Drain-source on-state resistance as a<br>function of drain current; typical values function of gate-source voltage; typical values<br>**----- End of picture text -----**<br> NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **10 of 21** **NX3008CBKV** **Nexperia** ## **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [185 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao272<br>2.0<br>a<br>1.5 peeCEES<br>1.0<br>ttt<br>irl|| |Tt|Tt|| |dlIdlII<br>0.5<br>TEEtLtL Ty<br>TttT]tT] Ty<br>0.0<br>PTEETLETL TTL<br>-60 0 60 120 180<br>Tj (˚C)j (˚C) (˚C)<br>**----- End of picture text -----**<br> **==> picture [441 x 522] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao271 a<br>0.4<br>ID 1.5<br>(A)<br>(1) (2)<br>0.3 Hee) CEESpeeCEES<br>1.0<br>ae ae ttt<br>0.2 fe irl|| |Tt|Tt|| |dlIdlII<br>0.5<br>| | TT TEEtLtL Ty<br>0.1 a a TttT]tT] Ty<br>0.0<br>e/a PTEETLETL TTL<br>-60 0 60 120 180<br>Tj (˚C)j (˚C) (˚C)<br>0.0 7m<br>0 1 2 3<br>VGS (V)<br>a= es<br>VDS > ID x RDSon<br>(1) Tj = 25 °C<br>(2) Tj = 150 °C<br>TR1: Transfer characteristics: drain current as Fig 14. TR1: Normalized drain-source on-state<br>a function of gate-source voltage; typical resistance as a function of junction<br>values temperature; typical values<br>001aao273 001aao274<br>1.5 10 [2]<br>VGS(th)<br>(V) C (1)<br>(1) (pF)<br>1.0<br>SaSSaee Sai ml<br>(2)<br>10<br>(2)<br>—S Bi0 r<br>0.5 (3)<br>(3)<br>~~ siiiiimani Sati<br>0.0 PLE 1 ATT<br>-60 0 60 120 180 10 [-1] 1 10 10 [2]<br>Tj (˚C) VDS (V)<br>ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V<br>(1) maximum values (1)Ciss<br>**----- End of picture text -----**<br> **Fig 13. TR1: Transfer characteristics: drain current as a function of gate-source voltage; typical values** - (2)Coss - (2) typical values - (3)Crss - (3) minimum values **Fig 15. TR1: Gate-source threshold voltage as a function of junction temperature** **Fig 16. TR1: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values** NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **11 of 21** **Rev. 1 — 29 July 2011** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [445 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao275<br>5<br>VGS VDS<br>(V)<br>4 ID<br>VGS(pl)<br>3<br>VGS(th)<br>2 VGS<br>QGS1 QGS2<br>1 QGS QGD<br>QG(tot)<br>003aaa508<br>0<br>0.0 0.2 0.4 0.6<br>QG (nC)<br>**----- End of picture text -----**<br> ID = 0.4 A; VDS = 15 V; Tamb = 25 °C **Fig 17. TR1: Gate-source voltage as a function of gate Fig 18. Gate charge waveform definitions charge; typical values** **==> picture [482 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao276 001aao256<br>0.4 -0.25<br>-4.5 V -3 V<br>IS (A)ID<br>(A)<br>-0.20 -2.5 V<br>0.3<br>-0.15<br>(1) (2)<br>0.2<br>-0.10<br>-2 V<br>0.1<br>-0.05<br>V GS = -1.5 V<br>0.0 0.00<br>0.0 0.4 0.6 1.2 0 -1 -2 -3 -4<br>VSD (V) VDS (V)<br>VGS = 0 V Tj = 25 °C<br>(1) Tj = 150 °C<br>(2) Tj = 25 °C<br>Fig 19. TR1: Source current as a function of Fig 20. TR2: Output characteristics: drain current as a<br>source-drain voltage; typical values function of drain-source voltage; typical values<br>**----- End of picture text -----**<br> **Fig 20. TR2: Output characteristics: drain current as a function of drain-source voltage; typical values** NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 1 — 29 July 2011** © Nexperia B.V. 2017. All rights reserved **12 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [497 x 564] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao257 001aao258<br>-10 [-3] 14<br>RDS (on)<br>(Ω)<br>ID 12<br>(A) (1) (2) (3) (4)<br>(1) (2) (3) 10<br>-10 [-4]<br>8<br>6<br>(5)<br>-10 [-5]<br>4<br>(6)<br>2<br>-10 [-6] 0<br>0.0 -0.5 -1.0 -1.5 0 -0.05 -0.10 -0.15 -0.20 -0.25<br>VGS (V) ID (A)<br>Tj = 25 °C; VDS = -5 V Tj = 25 °C<br>(1) minimum values (1) VGS = -1.75 V<br>(2) typical values (2) VGS = -2.0 V<br>(3) maximum values (3) VGS = -2.25 V<br>(4) VGS = -2.5 V<br>(5) VGS = -3.0 V<br>(6) VGS = -4.5 V<br>Fig 21. TR2: Sub-threshold drain current as a function Fig 22. TR2: Drain-source on-state resistance as a<br>of gate-source voltage function of drain current; typical values<br>001aao259 001aao260<br>14 -0.25<br>RDS (Ω)(on) ID<br>12 (A)<br>-0.20<br>10<br>(1) (2)<br>-0.15<br>8<br>6<br>(1) -0.10<br>4<br>(2)<br>-0.05<br>2<br>0 0.00<br>0 -1 -2 -3 -4 -5 0 -1 -2 -3<br>VGS (A) VGS (V)<br>ID = -200 mA VDS > ID x RDSon<br>(1) Tj = 150 °C (1) Tj = 25 °C<br>(2) Tj = 25 °C (2) Tj = 150 °C<br>**----- End of picture text -----**<br> **Fig 23. TR2: Drain-source on-state resistance as a Fig 24. TR2: Transfer characteristics: drain current as function of gate-source voltage; typical values a function of gate-source voltage; typical values** NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **13 of 21** **NX3008CBKV** **Nexperia** ## **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [433 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao261 001aao262<br>2.0 -1.5<br>a VGS(th)<br>ttt tt fA (V) Fit tty<br>1.5 (1)<br>PTT TT Ar -1.0 SECT<br>(2)<br>A Ss<br>1.0<br>Ter Pree<br>a-sneeee -0.5 P S (3) EC<br>0.5<br>Til TTT T I TS<br>Pt tT ty | yt<br>0.0 PEEP yy I 0.0 FETT<br>-60 0 60 120 180 -60 0 60 Ty 120 | 180<br>Tj (˚C) Tj (˚C)<br>**----- End of picture text -----**<br> ID = -0.25 mA; VDS = VGS (1) maximum values - (2) typical values - (3) minimum values **Fig 25. TR2: Normalized drain-source on-state resistance as a function of junction temperature; typical values** **Fig 26. TR2: Gate-source threshold voltage as a function of junction temperature** **==> picture [190 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao263<br>10 [2]<br>C (1)<br>(pF)<br>Efe cael<br>10 CT S<br>(2)<br>pTErisdT ANANNtttTT T<br>(3)<br>nn [> Sea<br>1 UT TI<br>-10 [-1] -1 -10 -10 [2]<br>VDS (V)<br>f = 1 MHz; VGS = 0 V<br>**----- End of picture text -----**<br> **==> picture [189 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao264<br>-5<br>VGS<br>(V)<br>-4 ft<br>-3 HERE<br>7<br>-2 4<br>-1<br>foo<br>0 ZEEE<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>QG (nC)<br>**----- End of picture text -----**<br> **==> picture [161 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> ID = -200 mA; VDS = -15 V; Tamb = 25 °C<br>**----- End of picture text -----**<br> (1)Ciss (2)Coss - (3)Crss **Fig 27. TR2: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values** **Fig 28. Gate-source voltage as a function of gate charge; typical values** NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **14 of 21** **NX3008CBKV** **Nexperia** ## **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **==> picture [497 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 001aao265<br>-0.25<br>IS<br>(A)<br>-0.20<br>VDS<br>ID<br>-0.15<br>(1) (2)<br>VGS(pl)<br>-0.10<br>VGS(th)<br>VGS -0.05<br>QGS1 QGS2<br>QGS QGD<br>QG(tot) 0.00<br>0.0 -0.4 -0.8 -1.2<br>003aaa508 VSD (V)<br>VGS = 0 V<br>(1) Tj = 150 °C<br>(2) Tj = 25 °C<br>Fig 29. Gate charge waveform definitions Fig 30. TR2: Source current as a function of<br>source-drain voltage; typical values<br>**----- End of picture text -----**<br> ## **8. Test information** **==> picture [120 x 93] intentionally omitted <==** **----- Start of picture text -----**<br> P duty cycle δ = t1<br>t2 t2<br>t1<br>t<br>006aaa812<br>**----- End of picture text -----**<br> **Fig 31. Duty cycle definition** ## **8.1 Quality information** This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard _Q101 - Stress test qualification for discrete semiconductors_ , and is suitable for use in automotive applications. NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **15 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** ## **9. Package outline** ## **Plastic surface-mounted package; 6 leads** ## **SOT666** **==> picture [478 x 570] intentionally omitted <==** **----- Start of picture text -----**<br> D A E X<br>S Y S<br>HE<br>6 5 4<br>pin 1 index<br>A<br>1 2 3 c<br>e1 bp w M A<br>Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A bp c D E e e1 HE Lp w y<br>0.6 0.27 0.18 1.7 1.3 1.7 0.3<br>mm 1.0 0.5 0.1 0.1<br>0.5 0.17 0.08 1.5 1.1 1.5 0.1<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-08<br> SOT666<br>06-03-16<br>**----- End of picture text -----**<br> ## **Fig 32. Package outline SOT666 (SOT666)** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved NX3008CBKV **Product data sheet** **Rev. 1 — 29 July 2011** **16 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** ## **10. Soldering** **==> picture [380 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> 2.75<br>2.45<br>2.1<br>1.6<br>solder lands<br>0.4<br>(6 × ) 0.25 0.3<br>0.538 (2 × ) (2 × ) placement area<br>0.55<br>2 1.7 1.075<br>(2 × ) solder paste<br>occupied area<br>0.325 0.375<br>(4 × ) (4 × ) Dimensions in mm<br>1.7<br>0.45 0.6<br>(4 × ) (2 × )<br>0.5 0.65<br>(4 × ) (2 × ) sot666_fr<br>**----- End of picture text -----**<br> **Fig 33. Reflow soldering footprint for SOT666 (SOT666)** NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **17 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** ## **11. Revision history** |**Table 8.**|**Revision**|**history**|||| |---|---|---|---|---|---| |**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |NX3008CBKV v.1||20110729|Product data sheet|-|-| NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **18 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** ## **12. Legal information** ## **12.1 Data sheet status** |**Document status** **[1]**<br> **[2]**|**Product status[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. ## **12.2 Definitions** **Preview** — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **12.3 Disclaimers** **Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of Nexperia. **Right to make changes** — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use** — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Applications** — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. **Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. NX3008CBKV © Nexperia B.V. 2017. All rights reserved **Product data sheet** **Rev. 1 — 29 July 2011** **19 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** **Terms and conditions of commercial sale** — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. ## **12.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. **No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. ## **13. Contact information** For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com NX3008CBKV **Product data sheet** All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved **Rev. 1 — 29 July 2011** **20 of 21** **NX3008CBKV** **Nexperia** **30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET** ## **14. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . .1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . .1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . .1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . .2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . .2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . .5**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .8**| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . .15**| |8.1|Quality information . . . . . . . . . . . . . . . . . . . . . .15| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .16**| |**10**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17**| |**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .18**| |**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .19**| |12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . .19| |12.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| |12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| |12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .20| |**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . .20**| > © **Nexperia B.V. 2017. All rights reserved** For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com **Date of release: 29 July 2011**
Updated at June 9, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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