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NX1029X,115
Dual MOSFET, Trench, Complementary N and P Channel, 60 V, 60 V, 330 mA, 330 mA, 1 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NEXPERIA
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOT-666
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 330mW
- Power Dissipation P Channel: 330mW
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 330mA
- Continuous Drain Current Id P Channel: 330mA
- Drain Source On State Resistance N Channel: 1ohm
- Drain Source On State Resistance P Channel: 1ohm
| Delivery and price | |
|---|---|
| Units per pack | 12000 |
| Price | 0.079 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **NX1029X**
## **60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**Rev. 1 — 12 August 2011**
**Product data sheet**
## **1. Product profile**
## **1.1 General description**
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
## **1.2 Features and benefits**
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
- AEC-Q101 qualified
## **1.3 Applications**
- Level shifter
- Power supply converter
- Load switch
- Switching circuits
## **1.4 Quick reference data**
|**Table 1.**|**Quick reference data**|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|**TR2 (P-channel)**||||||||
|VDS|drain-source voltage|Tj= 25 °C||-|-|-50|V|
|VGS|gate-source voltage|||-20|-|20|V|
|ID|drain current|VGS= -10 V; Tamb= 25 °C|[1]|-|-|-170|mA|
|**TR1 (N-channel)**||||||||
|VDS|drain-source voltage|Tj= 25 °C||-|-|60|V|
|VGS|gate-source voltage|||-20|-|20|V|
|ID|drain current|VGS= 10 V; Tamb= 25 °C|[1]|-|-|330|mA|
|**TR1 (N-channel), Static characteristics**||||||||
|RDSon|drain-source on-state|VGS= 10 V; ID= 500 mA;||-|1|1.6|Ω|
||resistance|pulsed; tp≤300 µs;||||||
|||δ ≤0.01 ; Tj= 25 °C||||||
|**TR2 (P-channel), Static characteristics**||||||||
|RDSon|drain-source on-state|VGS= -10 V; ID= -100 mA;||-|4.5|7.5|Ω|
||resistance|Tj= 25 °C||||||
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm[2] .
**NX1029X**
**Nexperia**
**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
## **2. Pinning information**
## **Table 2. Pinning information**
|**Pin**<br>**Symbol**<br>**Description**<br>**Simplified outline**<br>**Graphic symbol**|**Pin**<br>**Symbol**<br>**Description**<br>**Simplified outline**<br>**Graphic symbol**|
|---|---|
|1<br>S1<br>source TR1<br>**SOT666 (SOT666)**<br>2<br>G1<br>gate TR1<br>3<br>D2<br>drain TR2<br>4<br>S2<br>source TR2<br>5<br>G2<br>gate TR2<br>6<br>D1<br>drain TR1<br>1<br>2<br>3<br>4<br>5<br>6<br>G1|_017aaa262_<br>D1<br>S1<br>D2<br>S2<br>G2|
## **3. Ordering information**
## **Table 3. Ordering information**
|**Type number**|**Package**|
|---|---|
||**Name**<br>**Description**<br>**Version**|
|NX1029X|SOT666<br>plastic surface-mounted package; 6 leads<br>SOT666|
## **4. Marking**
|**Table 4.**|**Marking codes**||
|---|---|---|
|**Type number**||**Marking code[1]**|
|NX1029X||AD|
[1] % = placeholder for manufacturing site code.
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**2 of 20**
**NX1029X**
**Nexperia**
**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
## **5. Limiting values**
## **Table 5. Limiting values**
_In accordance with the Absolute Maximum Rating System (IEC 60134)._
|**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Max**<br>**Unit**|
|---|---|---|
|**TR2 (P-channel)**|||
|VDS<br>drain-source voltage|Tj= 25 °C|-<br>-50<br>V|
|VGS<br>gate-source voltage||-20<br>20<br>V|
|ID<br>drain current|VGS= -10 V; Tamb= 25 °C|[1]<br>-<br>-170<br>mA|
||VGS= -10 V; Tamb= 100 °C|[1]<br>-<br>-110<br>mA|
|IDM<br>peak drain current|Tamb= 25 °C; single pulse; tp≤10 µs|-<br>-0.7<br>A|
|Ptot<br>total power dissipation|Tamb= 25 °C|[2]<br>-<br>330<br>mW|
|||[1]<br>-<br>390<br>mW|
||Tsp= 25 °C|-<br>1090<br>mW|
|**TR1 (N-channel)**|||
|VDS<br>drain-source voltage|Tj= 25 °C|-<br>60<br>V|
|VGS<br>gate-source voltage||-20<br>20<br>V|
|ID<br>drain current|VGS= 10 V; Tamb= 25 °C|[1]<br>-<br>330<br>mA|
||VGS= 10 V; Tamb= 100 °C|[1]<br>-<br>210<br>mA|
|IDM<br>peak drain current|Tamb= 25 °C; single pulse; tp≤10 µs|-<br>1.2<br>A|
|Ptot<br>total power dissipation|Tamb= 25 °C|[2]<br>-<br>330<br>mW|
|||[1]<br>-<br>390<br>mW|
||Tsp= 25 °C|-<br>1090<br>mW|
|**Per device**|||
|Ptot<br>total power dissipation|Tamb= 25 °C|[2]<br>-<br>500<br>mW|
|Tj<br>junction temperature||-55<br>150<br>°C|
|Tamb<br>ambient temperature||-55<br>150<br>°C|
|Tstg<br>storage temperature||-65<br>150<br>°C|
|**TR1 (N-channel), Source-drain diode**|||
|IS<br>source current|Tamb= 25 °C|[2]<br>[1]<br>-<br>330<br>mA|
|**TR2 (P-channel), Source-drain diode**|||
|IS<br>source current|Tamb= 25 °C|[1]<br>-<br>-170<br>mA|
|**TR1 N-channel), ESD maximum rating**|||
|VESD<br>electrostatic discharge voltage|HBM|[3]<br>-<br>2000<br>V|
|**TR2 (P-channel), ESD maximum rating**|||
|VESD<br>electrostatic discharge voltage|HBM|[3]<br>-<br>1000<br>V|
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm[2] .
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[3] Measured between all pins.
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X
© Nexperia B.V. 2017. All rights reserved
**Product data sheet**
**3 of 20**
**NX1029X**
**Nexperia**
## **60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**==> picture [462 x 253] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aao121 001aao122<br>120 120<br>Pder Ider<br>(%) (%)<br>80 TEL N EEE 80 EL LINE EEE<br>TELL NEEL COEEEENETEE<br>40 ELLEN EE 40 EELLELIN EI<br>0 EL LEE ELIN- 0 ELLEE ELLA<br>-75 -25 25 75 125 175 -75 -25 25 75 125 175<br>Tj (°C) Tj (°C)<br>Paer = — Prot _ Ip<br> = Bravos * 100% Laer = Tooag * 100%<br>Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a<br>function of junction temperature function of junction temperature<br>**----- End of picture text -----**<br>
**==> picture [31 x 6] intentionally omitted <==**
**----- Start of picture text -----**<br>
017aaa059<br>**----- End of picture text -----**<br>
**==> picture [436 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10<br>ID SSSa SS SSSSSSS<br>(A)<br>Limit RDSon = VDS/ID<br>1 S g eeGQ OSG NOes(GOOeeg oeS S OeGN (GOee eeGO OG<br>(1)<br>SS SSSt<br>(2)<br>10 [−] [1] Syee e s ene a eeeee e se i ee eeeEB<br>SS (3)<br>(4)<br>|__| __{ _} } fff fff St Lt]<br>10 [−] [2] ee (5)<br>(6)<br>eae en ee<br>pC CCU CE TE ETT<br>10 [−] [3] PEE EET<br>10 [−] [1] 1 10 10 [2]<br>VDS (V)<br>IDM = single pulse<br>(1) tp = 100 μs<br>(2) tp = 1 ms<br>(3) tp = 10 ms<br>(4) DC; Tsp = 25 °C<br>(5) tp = 100 ms<br>(6) DC; Tamb = 25 °C; drain mounting pad 1 cm [2]<br>**----- End of picture text -----**<br>
**Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**4 of 20**
**NX1029X**
**Nexperia**
**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aao140<br>-1<br>ID<br>(A)<br>(1)<br>-10 [-1]<br>(2)<br>(3)<br>(4)<br>-10 [-2]<br>(5)<br>-10 [-3]<br>-10 [-1] -1 -10 -10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br>
IDM is single pulse
(1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm[2]
**Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage**
## **6. Thermal characteristics**
## **Table 6. Thermal characteristics**
|**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|**Per device**||
|Rth(j-a)<br>thermal resistance from junction to ambient<br>in free air|[1]<br>-<br>-<br>250<br>K/W|
|**TR1 (N-channel)**||
|Rth(j-a)<br>thermal resistance from junction to ambient<br>in free air|[1]<br>-<br>330<br>380<br>K/W|
||[2]<br>-<br>280<br>320<br>K/W|
|Rth(j-sp)<br>thermal resistance from junction to solder<br>point|-<br>-<br>115<br>K/W|
|**TR2 (P-channel)**||
|Rth(j-a)<br>thermal resistance from junction to ambient<br>in free air|[1]<br>-<br>330<br>380<br>K/W|
||[2]<br>-<br>280<br>320<br>K/W|
|Rth(j-sp)<br>thermal resistance from junction to solder<br>point|-<br>-<br>115<br>K/W|
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm[2] .
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
© Nexperia B.V. 2017. All rights reserved **5 of 20**
**NX1029X**
**Nexperia**
**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
017aaa064<br>10 [3]<br>Zth(j-a) duty cycle = 1<br>(K/W) 0.75<br>0.5<br>0.33<br>10 [2] 0.25 0.2<br>0.1 0.05<br>0 0.02<br>10 0.01<br>1<br>10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br>
FR4 PCB, standard footprint
**Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values**
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
017aaa065<br>10 [3]<br>Zth(j-a) duty cycle = 1<br>(K/W)<br>0.75<br>0.5<br>0.33<br>10 [2]<br>0.25 0.2<br>0.1 0.05<br>0 0.02<br>10 0.01<br>1<br>10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br>
FR4 PCB, mounting pad for drain 1 cm[2]
**Fig 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**6 of 20**
**NX1029X**
**Nexperia**
**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
017aaa064<br>10 [3]<br>Zth(j-a) duty cycle = 1<br>(K/W) 0.75<br>0.5<br>0.33<br>10 [2] 0.25 0.2<br>0.1 0.05<br>0 0.02<br>10 0.01<br>1<br>10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br>
FR4 PCB, standard footprint
**Fig 7. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values**
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
017aaa065<br>10 [3]<br>Zth(j-a) duty cycle = 1<br>(K/W)<br>0.75<br>0.5<br>0.33<br>10 [2]<br>0.25 0.2<br>0.1 0.05<br>0 0.02<br>10 0.01<br>1<br>10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br>
FR4 PCB, mounting pad for drain 1 cm[2]
**Fig 8. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**7 of 20**
**NX1029X**
**Nexperia**
**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
## **7. Characteristics**
|**Table 7.**<br>**Characteristics**|**Table 7.**<br>**Characteristics**||
|---|---|---|
|**Symbol**<br>**Parameter**<br>**Conditions**||**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|**TR2 (P-channel), Static characteristics**|||
|V(BR)DSS<br>drain-source<br>breakdown voltage|ID= -10 µA; VGS= 0 V; Tj= 25 °C|-50<br>-<br>-<br>V|
|VGSth<br>gate-source threshold<br>voltage|ID= -250 µA; VDS= VGS; Tj= 25 °C|-1.1<br>-1.6<br>-2.1<br>V|
|IDSS<br>drain leakage current|VDS= -50 V; VGS= 0 V; Tj= 25 °C|-<br>-<br>-1<br>µA|
||VDS= -50 V; VGS= 0 V; Tj= 150 °C|-<br>-<br>-2<br>µA|
|IGSS<br>gate leakage current|VGS= 20 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>-10<br>µA|
||VGS= -20 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>-10<br>µA|
|RDSon<br>drain-source on-state<br>resistance|VGS= -10 V; ID= -100 mA; Tj= 25 °C|-<br>4.5<br>7.5<br>Ω|
||VGS= -10 V; ID= -100 mA; Tj= 150 °C|-<br>8<br>13.5<br>Ω|
||VGS= -5 V; ID= -100 mA; Tj= 25 °C|-<br>5.1<br>8.5<br>Ω|
|gfs<br>transfer conductance|VDS= -10 V; ID= -100 mA; Tj= 25 °C|-<br>150<br>-<br>mS|
|**TR1 (N-channel), Static characteristics**|||
|V(BR)DSS<br>drain-source<br>breakdown voltage|ID= 10 µA; VGS= 0 V; Tj= 25 °C|60<br>-<br>-<br>V|
|VGSth<br>gate-source threshold<br>voltage|ID= 250 µA; VDS= VGS; Tj= 25 °C|1.1<br>1.6<br>2.1<br>V|
|IDSS<br>drain leakage current|VDS= 60 V; VGS= 0 V; Tj= 25 °C|-<br>-<br>1<br>µA|
||VDS= 60 V; VGS= 0 V; Tj= 150 °C|-<br>-<br>10<br>µA|
|IGSS<br>gate leakage current|VGS= 20 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>10<br>µA|
||VGS= -20 V; VDS= 0 V; Tj= 25 °C|-<br>-<br>10<br>µA|
|RDSon<br>drain-source on-state<br>resistance|VGS= 10 V; ID= 500 mA; pulsed;<br>tp≤300 µs; δ ≤0.01 ; Tj= 25 °C|-<br>1<br>1.6<br>Ω|
||VGS= 10 V; ID= 500 mA; pulsed;<br>tp≤300 µs; δ ≤0.01 ; Tj= 150 °C|-<br>2.25<br>3.6<br>Ω|
||VGS= 5 V; ID= 50 mA; pulsed;<br>tp≤300 µs; δ ≤0.01 ; Tj= 25 °C|-<br>1.3<br>2<br>Ω|
|gfs<br>transfer conductance|VDS= 10 V; ID= 100 mA; Tj= 25 °C|-<br>550<br>-<br>mS|
|**TR2 (P-channel), Dynamic characteristics**|||
|QG(tot)<br>total gate charge<br>VDS= -25 V; ID= -180 mA; VGS= -5 V;<br>Tj= 25 °C<br>QGS<br>gate-source charge<br>QGD<br>gate-drain charge||-<br>0.26<br>0.35<br>nC|
|||-<br>0.12<br>-<br>nC|
|||-<br>0.09<br>-<br>nC|
|Ciss<br>input capacitance<br>VDS= -25 V; f = 1 MHz; VGS= 0 V;<br>Tj= 25 °C<br>Coss<br>output capacitance<br>Crss<br>reverse transfer<br>capacitance||-<br>24<br>36<br>pF|
|||-<br>4.5<br>-<br>pF|
|||-<br>1.3<br>-<br>pF|
|td(on)<br>turn-on delay time<br>VDS= -30 V; RL= 250 Ω; VGS= -10 V;<br>RG(ext)= 6 Ω; Tj= 25 °C<br>tr<br>rise time<br>td(off)<br>turn-off delay time<br>tf<br>fall time||-<br>13<br>26<br>ns|
|||-<br>11<br>-<br>ns|
|||-<br>48<br>96<br>ns|
|||-<br>25<br>-<br>ns|
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved
NX1029X **Product data sheet**
**Rev. 1 — 12 August 2011**
**8 of 20**
**NX1029X**
**Nexperia**
**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**Table 7. Characteristics** _…continued_
|**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|**TR1 (N-channel), Dynamic characteristics**||
|QG(tot)<br>total gate charge<br>VDS= 30 V; ID= 300 mA; VGS= 4.5 V;<br>Tj= 25 °C<br>QGS<br>gate-source charge<br>QGD<br>gate-drain charge|-<br>0.5<br>0.6<br>nC|
||-<br>0.2<br>-<br>nC|
||-<br>0.1<br>-<br>nC|
|Ciss<br>input capacitance<br>VDS= 10 V; f = 1 MHz; VGS= 0 V;<br>Tj= 25 °C<br>Coss<br>output capacitance<br>Crss<br>reverse transfer<br>capacitance|-<br>33<br>50<br>pF|
||-<br>7<br>-<br>pF|
||-<br>4<br>-<br>pF|
|td(on)<br>turn-on delay time<br>VDS= 50 V; RL= 250 Ω; VGS= 10 V;<br>RG(ext)= 6 Ω; Tj= 25 °C<br>tr<br>rise time<br>td(off)<br>turn-off delay time<br>tf<br>fall time|-<br>5<br>10<br>ns|
||-<br>6<br>-<br>ns|
||-<br>12<br>24<br>ns|
||-<br>7<br>-<br>ns|
|**TR2 (P-channel), Source-drain diode characteristics**||
|VSD<br>source-drain voltage<br>IS= -115 mA; VGS= 0 V; Tj= 25 °C|-0.48<br>-0.85<br>-1.2<br>V|
|**TR1 (N-channel), Source-drain diode characteristics**||
|VSD<br>source-drain voltage<br>IS= 115 mA; VGS= 0 V; Tj= 25 °C|0.47<br>0.75<br>1.1<br>V|
**==> picture [497 x 289] intentionally omitted <==**
**----- Start of picture text -----**<br>
017aaa039 017aaa040<br>0.7 10 [−] [3]<br>ID VGS = 4.0 V<br>3.5 V<br>(A)<br>0.6 ID<br>(A)<br>3.25 V<br>0.5<br>10 [−] [4]<br>(1) (2) (3)<br>0.4<br>3.0 V<br>0.3<br>2.75 V 10 [−] [5]<br>0.2<br>2.5 V<br>0.1<br>0.0 10 [−] [6]<br>0.0 1.0 2.0 3.0 4.0 0.0 1.0 2.0 3.0<br>VDS (V) VGS (V)<br>Tj = 25 °C Tj = 25 °C; VDS = 5 V<br>(1) minimum values<br>(2) typical values<br>(3) maximum values<br>Fig 9. TR1: Output characteristics: drain current as a Fig 10. TR1: Sub-threshold drain current as a function<br>function of drain-source voltage; typical values of gate-source voltage<br>**----- End of picture text -----**<br>
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**9 of 20**
**NX1029X**
**Nexperia**
**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**==> picture [442 x 534] intentionally omitted <==**
**----- Start of picture text -----**<br>
017aaa041 017aaa042<br>6.0 6.0<br>RDSon EEE RDSon UE EEE<br>( Ω ) ( Ω )<br>(1)<br>4.0 i EE 4.0 EULEE EL<br>(2)<br>tt TT (3) EUIN EE (1) E<br>2.0 (4) 2.0<br>EEDZAZEnPE Ne<br>(2)<br>= BERENSEEEE<br>(5)<br>0.0 TLL 0.0 ELE EEE<br>0.0 0.2 0.4 0.6 0.8 1.0 0.0 2.0 4.0 6.0 8.0 10.0<br>ID (A) VGS (V)<br>Tj = 25 °C ID = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.01<br>(1) VGS = 3.25 V (1) Tj = 150 °C<br>(2) VGS = 3.5 V (2) Tj = 25 °C<br>(3) VGS = 4 V<br>(4) VGS = 5 V<br>(5) VGS = 10 V<br>TR1: Drain-source on-state resistance as a Fig 12. TR1: Drain-source on-state resistance as a<br>function of drain current; typical values function of gate-source voltage; typical values<br>017aaa043 017aaa298<br>1.0 2.4<br>ID a<br>(A)<br>0.8 HERE /<br>EEE (1) YE (2) 1.8 A.<br>0.6 HEREC SaanD/4nm<br>1.2<br>0.4 FCA EEE<br>Corey 0.6 a4<br>0.2<br>HERE EEE Sa4><br>0.0 PEE FE 0.0 ett}tT yt<br>0.0 1.0 2.0 3.0 4.0 5.0 –60 0 60 120 180<br>VGS (V) Tj (°C)<br>VDS > ID x RDSon<br>(1) Tj = 25 °C<br>**----- End of picture text -----**<br>
**Fig 11. TR1: Drain-source on-state resistance as a function of drain current; typical values**
**Fig 12. TR1: Drain-source on-state resistance as a function of gate-source voltage; typical values**
(2) Tj = 150 °C
**Fig 13. TR1: Transfer characteristics: drain current as a function of gate-source voltage; typical values**
**Fig 14. TR1: Normalized drain-source on-state resistance as a function of junction temperature; typical values**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
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**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**==> picture [497 x 547] intentionally omitted <==**
**----- Start of picture text -----**<br>
017aaa299 017aaa046<br>3.0 10 [2]<br>VGS(th)<br>(V) C (1)<br>(1) (pF)<br>2.0<br>(2)<br>(2)<br>10<br>(3) (3)<br>1.0<br>0.0 1<br>–60 0 60 120 180 10 [−] [1] 1 10 10 [2]<br>Tj (°C) VDS (V)<br>ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V<br>(1) maximum values (1) Ciss<br>(2) typical values (2) Coss<br>(3) minimum values (3) Crss<br>Fig 15. TR1: Gate-source threshold voltage as a Fig 16. TR1: Input, output and reverse transfer<br>function of junction temperature capacitances as a function of drain-source<br>voltage; typical values<br>017aaa047<br>5.0<br>VGS<br>(V) VDS<br>4.0<br>ID<br>3.0<br>VGS(pl)<br>2.0 VGS(th)<br>VGS<br>1.0 QGS1 QGS2<br>QGS QGD<br>QG(tot)<br>0.0<br>003aaa508<br>0.0 0.2 0.4 0.6 0.8<br>QG (nC)<br>ID = 300 mA; VDS = 30 V; Tamb = 25 °C<br>Fig 17. TR1: Gate-source voltage as a function of gate Fig 18. Gate charge waveform definitions<br>charge; typical values<br>**----- End of picture text -----**<br>
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
© Nexperia B.V. 2017. All rights reserved **11 of 20**
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**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**==> picture [497 x 506] intentionally omitted <==**
**----- Start of picture text -----**<br>
017aaa048 001aao124<br>1.2 -0.20<br>VGS = -10 V -4.0 V -3.5 V<br>ID<br>IS (A)<br>(A)<br>-0.15<br>0.8<br>-3.0 V<br>(1) (2)<br>-0.10<br>0.4<br>-0.05 -2.5 V<br>0.0 0<br>0.0 0.4 0.8 1.2 0 -1 -2 -3 -4<br>VSD (V) VDS (V)<br>VGS = 0 V Tj = 25 °C<br>(1) Tj = 150 °C<br>(2) Tj = 25 °C<br>Fig 19. TR1: Source current as a function of Fig 20. TR2: Output characteristics: drain current as a<br>source-drain voltage; typical values function of drain-source voltage; typical values<br>001aao125 001aao126<br>-10 [-3] 12<br>(1) (2) (3)<br>ID RDSon<br>(A) (Ω)<br>(1) (2) (3)<br>-10 [-4] 8<br>(4)<br>(5)<br>-10 [-5] 4<br>-10 [-6] 0<br>0 -0.5 -1.0 -1.5 -2.0 -2.5 0 -0.1 -0.2 -0.3 -0.4<br>VGS (V) ID (A)<br>Tj = 25 °C; VDS = -5 V Tj = 25 °C<br>(1) minimum values (1) VGS = -3.0 V<br>(2) typical values (2) VGS = -3.5 V<br>**----- End of picture text -----**<br>
- (3) maximum values
(3) VGS = -4.0 V (4) VGS = -5.0 V (5) VGS = -10.0 V
**Fig 21. TR2: Sub-threshold drain current as a function Fig 22. TR2: Drain-source on-state resistance as a of gate-source voltage function of drain current; typical values**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
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## **60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**==> picture [233 x 204] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aao127<br>14<br>RDSon<br>(Ω)<br>10<br>(1)<br>6<br>(2)<br>2<br>0 -2 -4 -6 -8 -10<br>VGS (V)<br>ID = -200 mA<br>**----- End of picture text -----**<br>
(1) Tj = 150 °C
- (2) Tj = 25 °C
**Fig 23. TR2: Drain-source on-state resistance as a function of gate-source voltage; typical values**
**==> picture [234 x 273] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aao130<br>-3<br>VGS(th)<br>(V)<br>-2 (1)<br>(2)<br>-1 (3)<br>0<br>-60 0 60 120 180<br>Tj (°C)<br>ID = -0.25 mA; VDS = VGS<br>(1) maximum values<br>(2) typical values<br>(3) minimum values<br>Fig 25. TR2: Gate-source threshold voltage as a<br>function of junction temperature<br>**----- End of picture text -----**<br>
**==> picture [233 x 219] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aao128<br>-0.20<br>ID<br>(A)<br>(1) (2)<br>-0.15<br>-0.10<br>-0.05<br>(2)<br>(1)<br>0<br>0 -1 -2 -3 -4<br>VGS (V)<br>VDS > ID x RDSon<br>(1) Tj = 25 °C<br>**----- End of picture text -----**<br>
- (2) Tj = 150 °C
**Fig 24. TR2: Transfer characteristics: drain current as a function of gate-source voltage; typical values**
**==> picture [233 x 246] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aao131<br>10 [2]<br>C<br>(pF) (1)<br>(2)<br>10<br>(3)<br>1<br>-10 [-1] -1 -10 -10 [2]<br>VDS (V)<br>f = 1 MHz; VGS = 0 V<br>(1) Ciss<br>(2) Coss<br>(3) Crss<br>**----- End of picture text -----**<br>
**Fig 26. TR2: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values**
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NX1029X **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 1 — 12 August 2011**
**13 of 20**
**NX1029X**
**Nexperia**
## **60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
**==> picture [497 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aao132 001aao133<br>-10 -0.3<br>VGS<br>(V) IS<br>-8 (A)<br>-0.2<br>-6<br>-4<br>-0.1<br>(1) (2)<br>-2<br>0 0<br>0 0.2 0.4 0.6 0 -0.4 -0.8 -1.2<br>QG (nC) VSD (V)<br>ID = -180 mA; VDS = -25 V; Tamb = 25 °C VGS = 0 V<br>(1) Tj = 150 °C<br>(2) Tj = 25 °C<br>Fig 27. TR2: Gate-source voltage as a function of gate Fig 28. TR2: Source current as a function of<br>charge; typical values source-drain voltage; typical values<br>**----- End of picture text -----**<br>
## **8. Test information**
**==> picture [120 x 94] intentionally omitted <==**
**----- Start of picture text -----**<br>
P duty cycle δ = t1<br>t2 t2<br>t1<br>t<br>006aaa812<br>**----- End of picture text -----**<br>
**Fig 29. Duty cycle definition**
## **8.1 Quality information**
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard _Q101 - Stress test qualification for discrete semiconductors_ , and is suitable for use in automotive applications.
All information provided in this document is subject to legal disclaimers.
NX1029X **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 1 — 12 August 2011**
**14 of 20**
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**60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET**
## **9. Package outline**
## **Plastic surface-mounted package; 6 leads**
## **SOT666**
**==> picture [478 x 570] intentionally omitted <==**
**----- Start of picture text -----**<br>
D A E X<br>S Y S<br>HE<br>6 5 4<br>pin 1 index<br>A<br>1 2 3 c<br>e1 bp w M A<br>Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A bp c D E e e1 HE Lp w y<br>0.6 0.27 0.18 1.7 1.3 1.7 0.3<br>mm 1.0 0.5 0.1 0.1<br>0.5 0.17 0.08 1.5 1.1 1.5 0.1<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-08<br> SOT666<br>06-03-16<br>**----- End of picture text -----**<br>
## **Fig 30. Package outline SOT666 (SOT666)**
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© Nexperia B.V. 2017. All rights reserved
NX1029X
**Product data sheet**
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## **10. Soldering**
**==> picture [380 x 217] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.75<br>2.45<br>2.1<br>1.6<br>solder lands<br>0.4<br>(6 × ) 0.25 0.3<br>0.538 (2 × ) (2 × ) placement area<br>0.55<br>2 1.7 1.075<br>(2 × ) solder paste<br>occupied area<br>0.325 0.375<br>(4 × ) (4 × ) Dimensions in mm<br>1.7<br>0.45 0.6<br>(4 × ) (2 × )<br>0.5 0.65<br>(4 × ) (2 × ) sot666_fr<br>**----- End of picture text -----**<br>
**Fig 31. Reflow soldering footprint for SOT666 (SOT666)**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X **Product data sheet**
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## **11. Revision history**
|**Table 8.**<br>**Revision**|**history**||||
|---|---|---|---|---|
|**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**|
|NX1029X v.1|20110812|Product data sheet|-|-|
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 12 August 2011**
NX1029X
© Nexperia B.V. 2017. All rights reserved
**Product data sheet**
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## **12. Legal information**
## **12.1 Data sheet status**
|**Document status** **[1]**<br> **[2]**|**Product status[3]**|**Definition**|
|---|---|---|
|Objective [short] data sheet|Development|This document contains data from the objective specification for product development.|
|Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.|
|Product [short] data sheet|Production|This document contains the product specification.|
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.
## **12.2 Definitions**
**Preview** — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
**Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet.
## **12.3 Disclaimers**
**Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of Nexperia.
**Right to make changes** — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
**Suitability for use** — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
**Applications** — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect.
**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
All information provided in this document is subject to legal disclaimers.
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© Nexperia B.V. 2017. All rights reserved
**Product data sheet**
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**Terms and conditions of commercial sale** — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer.
## **12.4 Trademarks**
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
**No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
**Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
## **13. Contact information**
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
All information provided in this document is subject to legal disclaimers.
NX1029X **Product data sheet**
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**Rev. 1 — 12 August 2011**
**19 of 20**
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## **14. Contents**
|**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1**|
|---|---|
|1.1|General description . . . . . . . . . . . . . . . . . . . . . .1|
|1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . .1|
|1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
|1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . .1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . .2**|
|**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . .2**|
|**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
|**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . .5**|
|**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . .14**|
|8.1|Quality information . . . . . . . . . . . . . . . . . . . . . .14|
|**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .15**|
|**10**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16**|
|**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .17**|
|**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .18**|
|12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . .18|
|12.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .18|
|12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .18|
|12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .19|
|**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . .19**|
> © **Nexperia B.V. 2017. All rights reserved**
For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com **Date of release: 12 August 2011**
Updated at June 9, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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