NVTFS9D6P04M8LTAG

## MOSFET - Power, Single P-Channel -40 V, 9.5 m -64 A 

## NVTFS9D6P04M8L 

## **Features** 

- Small Footprint (3.3 x 3.3 mm) for Compact Design 

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- Low R to Minimize Conduction Losses DS(on) 

- Low Capacitance to Minimize Driver Losses 

- NVTFWS9D6P04M8L − Wettable Flanks Product 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant 

|**V(BR)DSS**|**RDS(on) MAX**|**ID MAX**|
|---|---|---|
|−40 V|9.5 m @ −10 V|−64 A|
||13.8 m @ −4.5 V||



**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

**Parameter Symbol Value Unit** ~~eses es~~ Drain−to−Source Voltage VDSS −40 V ~~eses es~~ Gate−to−Source Voltage VGS ± 20 V ~~es~~ Continuous Drain TC = 25 ° C ID −64 A ~~a~~ Current R(Notes 1, 2, 4)JC Steady ~~ee|~~ TC = 100 ° C es ~~||~~ −46 ~~es~~ Power Dissipation State TC = 25 ° C PD 75 W R JC (Notes 1, 2) TC = 100 ° C 38 ~~a~~ Continuous Drain ~~ee~~ T ~~ee~~ A = 25 ° C ID −13 A ~~a~~ Current R(Notes 1, 3, 4)JA Steady ~~|ee~~ TA = 100 ° C ~~Pe~~ −9 Power Dissipation State ~~|~~ TA = 25 ° C PD ~~||~~ 3.2 W R JA (Notes 1, 3) TA = 100 ° C 1.6 ~~| Pe~~ Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 311 A Operating Junction and Storage Temperature TJ, Tstg −55 to ° C Range +175 ~~ee te~~ Source Current (Body Diode) IS −62 A Single Pulse Drain−to−Source Avalanche EAS 220 mJ Energy (IL(pk) = −8.5 A) ~~ee~~ Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**THERMAL RESISTANCE MAXIMUM RATINGS** (Note 1) ~~es~~ **Parameter Symbol Value Unit** Junction−to−Case − Steady State (Drain) R JC 2 ° C/W (Notes 1, 2, 4) Junction−to−Ambient − Steady State (Note 3) R JA 47 ~~pa ee ee~~ 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

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P−Channel MOSFET<br>D (5−8)<br>G (4)<br>S (1,2,3)<br>**----- End of picture text -----**<br>


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MARKING DIAGRAM<br>1<br>2<br>1 S D<br>WDFN8 S XXXX D<br>( 8FL) S AYWW D<br>CASE 511AB G D<br>8<br>XXXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information on page 5 of this data sheet. 

2. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power. 

3. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NVTFS9D6P04M8L/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **December, 2019 − Rev. 2** 

## **NVTFS9D6P04M8L** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C u|nless otherwise noted)|nless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|−250�A|−40|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||21||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= −40 V|TJ= 25°C|||−1.0|�A|
||||TJ= 125°C|||−1000||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�20 V||||�100|nA|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −580�A||−1.0||−2.4|V|
|Negative Threshold Temperature Co-<br>efficient|VGS(TH)/TJ||||−5||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= −10 V, ID= −20 A|||7.5|9.5|m�|
|||VGS= −4.5 V, ID= −10 A|||10.7|13.8||
|Forward Transconductance|gFS|VDS= −1.5 V, ID= −15 A|||46||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= −20 V|||2312||pF|
|Output Capacitance|Coss||||923|||
|Reverse Transfer Capacitance|Crss||||31|||
|Total Gate Charge|QG(TOT)|VDS= −20 V,<br>ID= −20 A|VGS= −4.5 V||16.2||nC|
||||VGS= −10 V||34.6|||
|Threshold Gate Charge|QG(TH)|VGS = −10 V, VDS = −20 V,<br>ID = −20 A|||3.8||nC|
|Gate−to−Source Charge|QGS||||6.9|||
|Gate−to−Drain Charge|QGD||||4.1|||
|Plateau Voltage|VGP||||2.9||V|
|**SWITCHING CHARACTERISTICS, VGS = −4.5 V**(Note 6)||||||||
|Turn−On Delay Time|td(on)|VGS= −4.5 V, VDS= −20 V,<br>ID= −20 A, RG= 2.5�|||12.6||ns|
|Rise Time|tr||||91.5|||
|Turn−Off Delay Time|td(off)||||74.6|||
|Fall Time|tf||||49.3|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −20 A|TJ= 25°C||−0.86|−1.25|V|
||||TJ= 125°C||−0.74|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= −20 A|||38.8||ns|
|Charge Time|ta||||18.4|||
|Discharge Time|tb||||20.4|||
|Reverse Recovery Charge|QRR||||19.7||nC|



5. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NVTFS9D6P04M8L** 

## **TYPICAL CHARACTERISTICS** 

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180<br>VGS = −5.5 V to −10 V<br>150<br>−4.8 V<br>−4.5 V<br>120<br>−4.0 V<br>90<br>−3.6 V<br>60<br>−3.2 V<br>30 −2.4 V −2.6 V −2.8 V<br>0<br>0 1 2 3 4 5<br>, DRAIN CURRENT (A)<br>D<br>−I<br>**----- End of picture text -----**<br>


- −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 

**Figure 1. On−Region Characteristics** 

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200<br>VDS = 3 V<br>150<br>100<br>TJ = 25 ° C<br>50<br>TJ = 125 ° C TJ = −55 ° C<br>0<br>0 1 2 3 4 5 6 7 8<br>−VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>D<br>−I<br>**----- End of picture text -----**<br>


**Figure 2. Transfer Characteristics** 

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40 22<br>TIDJ = −20 A = 25 ° C 20 TJ = 25 ° C<br>32 18<br>16<br>24 14<br>VGS = −4.5 V<br>12<br>16 10<br>VGS = −10 V<br>8<br>8 6<br>4<br>0 2<br>2 4 6 8 10 5 40 75 110 145 180<br>VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.4 1E−04<br>2.2 VGS = −10 V TJ = 175 ° C<br>2.0 ID = −20 A 1E−05 TJ = 150 ° C<br>1.8 TJ = 125 ° C<br>1.6 1E−06<br>1.4 TJ = 85 ° C<br>1.2 1E−07<br>1.0 TJ = 25 ° C<br>0.8 1E−08<br>0.6<br>0.4 1E−09<br>−50 −25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>DSS<br>, NORMALIZED DRAIN−TO− −I<br>SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**NVTFS9D6P04M8L** 

## **TYPICAL CHARACTERISTICS** 

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1E+04 10<br>9 VDS = −20 V<br>TJ = 25 ° C<br>C ISS 8 ID = −20 A<br>7<br>1E+03<br>COSS 6<br>5<br>4 Q GS Q GD<br>1E+02<br>3<br>VGS = 0 V 2<br>TJ = 25 ° C 1<br>1E+01 f = 1 MHz CRSS 0<br>0.1 1 10 100 0 5 10 15 20 25 30 35<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge<br>1000 20<br>VGS = 0 V<br>tr 16<br>t d(off)<br>100 tf<br>td(on) 12<br>TJ = 25 ° C<br>8<br>10<br>VGS = −4.5 V 4<br>IV D DS = −20 A = −20 V TJ = 125 ° C TJ = −55 ° C<br>1 0<br>1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 1000<br>100 10 � s T J  (initial) = 25 ° C<br>100<br>10 VTCGS= 25 ≤  10 V ° C 0.5 ms1 ms T J  (initial) = 100 ° C<br>Single Pulse 10<br>10 ms<br>1<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit<br>0.1 1<br>0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>−V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, (A)<br>IPEAK<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. IPEAK vs. Time in Avalanche** 

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**4** 

**NVTFS9D6P04M8L** 

## **TYPICAL CHARACTERISTICS** 

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100<br>50% Duty Cycle<br>10 20%<br>10%<br>5%<br>1 2%<br>1%<br>0.1<br>0.01<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Characteristics** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NVTFS9D6P04M8LTAG|9D6M|WDFN8<br>(Pb−Free)|1500 / Tape & Reel|
|NVTFWS9D6P04M8LTAG|9D6W|WDFN8<br>(Pb−Free, Wettable Flank)|1500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

**NVTFS9D6P04M8L** 

## **PACKAGE DIMENSIONS** 

**WDFN8 3.3x3.3, 0.65P** CASE 511AB ISSUE D 

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2X<br>S ma 0.20 C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>LJ au n B 2X PROTRUSIONS OR GATE BURRS.<br>D1<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>4X A1 0.00 −−− 0.05 0.000 −−− 0.002<br>ee E1 E —— b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c we A1 ======= D1D2 2.951.98 3.052.11 3.152.24 0.0780.116 0.0830.120 0.1240.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>E3 0.23 0.30 0.40 0.009 0.012 0.016<br>a 4 O P S ===<br>A 6X C Ge 0.30 0.65 BSC0.41 0.51 0.012 0.026 BSC0.016 0.020<br>= 0.10 C ii: e SEATINGPLANE === K 0.65 0.80 0.95 0.026 0.032 0.037<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>~ aaa M 1.40 1.50 1.60 0.055 0.059 0.063<br>0  −−− 12  0  −−− 12<br>8X b<br>0.10 C A B<br>SOLDERING FOOTPRINT*<br>0.05 C<br>8X<br>4X L e/2 0.42 0.65 4X<br>1 4 PITCH 0.66<br>PACKAGE<br>K OUTLINE<br>E2<br>E3 M<br>o rhy a<br>8 5 L1 3.60<br>G D2<br>BOTTOM VIEW 0.75 0.57 2.30<br>oo r a l 7<br>0.47<br>2.37<br>3.46<br>DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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