NVTFS6H850NTAG

## NVTFS6H850N Power MOSFET **80 V, 9.5 m 68 A, Single N−Channel** , 

## **Features** 

- Small Footprint (3.3 x 3.3 mm) for Compact Design 

- Low R to Minimize Conduction Losses DS(on) 

**==> picture [190 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.onsemi.com<br>V(BR)DSS RDS(on) MAX ID MAX<br>80 V 9.5 m  @ 10 V 68 A<br>rree<br>N−Channel<br>D (5 − 8)<br>**----- End of picture text -----**<br>


- Low Capacitance to Minimize Driver Losses 

- NVTFS6H850NWF − Wettable Flanks Product 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

~~es~~ **Parameter Symbol Value Unit N−Channel** Drain−to−Source Voltage VDSS 80 V ~~ee~~ D (5 − 8) Gate−to−Source Voltage VGS ± 20 V Continuous Drain TC = 25 ° C ID 68 A ~~EE~~ Current R(Notes 1, 2, 3, 4)JC Steady TC = 100 ° C 48 Power Dissipation State TC = 25 ° C PD 107 W G (4) R JC (Notes 1, 2, 3) TC = 100 ° C 53 ~~Tere~~ u ~~gp~~ S (1, 2, 3) Continuous Drain TA = 25 ° C ID 11 A ~~a)~~ Current R(Notes 1 & 3, 4)JA Steady ~~FE~~ TA = 100 ° C 8.4 **MARKING DIAGRAM** Power DissipationR JA (Notes 1, 3) State TTAA = 100 = 25 °° CC PD 3.21.6 W **WDFN8** 1 SS1 XXXX DD ~~TSP ee a~~ Pulsed Drain Current TA = 25 ° ~~Fes~~ C, tp = 10 s IDM 300 A **CASE 511AB( 8FL)** GS AYWW DD ~~ee~~ Operating Junction and Storage Temperature TJ, Tstg −55 to ° C +175 XXXX = Specific Device Code ~~ee~~ Source Current (Body Diode) ~~eee~~ IS 89 A A = Assembly Location ~~ee~~ Y = Year Single Pulse Drain−to−Source Avalanche EAS 271 mJ WW = Work Week ~~ee~~ Energy (IL(pk) = 3.4 A) ee = Pb−Free Package Lead Temperature for Soldering Purposes TL 260 ° C ″ (Note: Microdot may be in either location) (1/8 from case for 10 s) ~~ee eee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** (Note 1) 

|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Junction−to−Case − Steady State (Note 3)|R JC|1.4|°C/W|
|Junction−to−Ambient − Steady State (Note 3)<br>~~ee~~|R JA<br>~~ee~~|47||



1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Psi ( ) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 

3. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NVTFS6H850N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **August, 2017 − Rev. 1** 

## **NVTFS6H850N** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C u|nless otherwise noted)|nless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|80|||V|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 80 V|TJ= 25°C|||10|�A|
||||TJ= 125°C|||250||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 70�A||2.0||4.0|V|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 10 A|||8.5|9.5|m�|
|Forward Transconductance|gFS|VDS= 15 V, ID= 10 A|||63||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= 40 V|||1140||pF|
|Output Capacitance|Coss||||175|||
|Reverse Transfer Capacitance|Crss||||10|||
|Threshold Gate Charge|QG(TH)|VGS = 10 V, VDS = 40 V, ID = 10 A|||3.6||nC|
|Gate−to−Source Charge|QGS||||6.5|||
|Gate−to−Drain Charge|QGD||||3.7|||
|Total Gate Charge|QG(TOT)|VGS = 10 V, VDS = 40 V, ID = 10 A|||19||nC|
|**SWITCHING CHARACTERISTICS**(Note 6)||||||||
|Turn−On Delay Time|td(on)|VGS= 6.0 V, VDS= 64 V,<br>ID= 10 A|||11||ns|
|Rise Time|tr||||32|||
|Turn−Off Delay Time|td(off)||||34|||
|Fall Time|tf||||8.0|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.8|1.2|V|
||||TJ= 125°C||0.7|||
|Reverse Recovery Time|tRR|VGS= 0 V, dlS/dt<br>IS= 10|= 100 A/�s,<br>A||40||ns|
|Charge Time|ta||||24|||
|Discharge Time|tb||||16|||
|Reverse Recovery Charge|QRR||||40||nC|



5. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

**www.onsemi.com** 

**2** 

**NVTFS6H850N** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 620] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>90 6 V to 10 V 90 VDS = 10 V<br>80 5.5 V 80<br>70 5.0 V 70<br>60 60<br>50 50<br>40 40<br>30 4.5 V 30 TJ = 25 ° C<br>20 20<br>10 10<br>0 VGS = 4.0 V 0 TJ = 125 ° C TJ = −55 ° C<br>0 1 2 3 4 5 6 7 2 3 4 5 6 7<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>30 12<br>28 ID = 10 A TJ = 25 ° C<br>26 T J  = 25 ° C 11<br>24<br>22 10<br>20<br>18 9 V GS  = 10 V<br>16<br>14 8<br>12<br>10 7<br>8<br>6 6<br>4 5 6 7 8 9 10 5 10 15 20 25 30 35 40<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.6 100K<br>2.4 ID = 10 A TJ = 175 ° C<br>2.2 VGS = 10 V 10K TJ = 150 ° C<br>2.0 T J  = 125 ° C<br>1.8<br>1K<br>1.6 TJ = 85 ° C<br>1.4<br>100<br>1.2 TJ = 25 ° C<br>1.0<br>0.8 10<br>0.6<br>0.4 1<br>−50 −25 0 25 50 75 100 125 150 175 5 15 25 35 45 55 65 75<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>IDSS<br>, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**3** 

**NVTFS6H850N** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [241 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10K<br>Ciss<br>1K<br>Coss<br>100<br>10 TJ = 25 ° C C rss<br>VGS = 0 V<br>f = 1 MHz<br>1<br>0 10 20 30 40 50 60 70 80<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**==> picture [239 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9<br>8<br>7<br>6 Qgs Qgd<br>5<br>4<br>3<br>2 VDS = 40 V<br>ID = 10 A<br>1 TJ = 25 ° C<br>0<br>0 2 4 6 8 10 12 14 16 18<br>Qg, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source vs. Total Charge** 

**==> picture [491 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 100<br>VGS = 10 V VGS = 0 V<br>V DS = 64 V<br>I D  = 10 A<br>td(off) tr<br>100 10<br>td(on)<br>10 1<br>t f T J  = 125 ° C T J  = 25 ° C T J  = −55 ° C<br>1 0.1<br>1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 100<br>100 T J(initial)  = 25 ° C<br>10<br>10 TVC GS  = 25 ≤  10 V ° C T J(initial)  = 100 ° C<br>Single Pulse 1<br>10  � s<br>1<br>0.5 ms<br>RDS(on) Limit<br>Thermal Limit 1 ms<br>Package Limit 10 ms<br>0.1 0.1<br>0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br> (A)<br>IPEAK<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Drain Current vs. Time in Avalanche** 

**www.onsemi.com** 

**4** 

**NVTFS6H850N** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [489 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>20%<br>10<br>10%<br>5%<br>2%<br>1<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (sec)<br>C/W)<br>°<br>(t) (<br>JA<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NVTFS6H850NTAG|6H850N|WDFN8<br>(Pb−Free)|1500 / Tape & Reel|
|NVTFS6H850NWFTAG|850NWF|WDFN8<br>(Pb−Free, Wettable Flanks)|1500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**5** 

**NVTFS6H850N** 

## **PACKAGE DIMENSIONS** 

**==> picture [486 x 384] intentionally omitted <==**

**----- Start of picture text -----**<br>
WDFN8 3.3x3.3, 0.65P<br>CASE 511AB<br>2X ISSUE D<br>S maa 0.20 C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>LJ D1 ro B 2X PROTRUSIONS OR GATE BURRS.<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>4X A1 0.00 −−− 0.05 0.000 −−− 0.002<br>Sci E1 E e ———— b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c ee A1 ======= D1D2 2.951.98 3.052.11 3.152.24 0.0780.116 0.0830.120 0.1240.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>a 4 P S O =———=——— E3 0.23 0.30 0.40 0.009 0.012 0.016<br>A 6X C Ge 0.30 0.65 BSC0.41 0.51 0.012 0.026 BSC0.016 0.020<br>a 0.10 C e SEATINGPLANE === K 0.65 0.80 0.95 0.026 0.032 0.037<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>~ are M 1.40 1.50 1.60 0.055 0.059 0.063<br>0  −−− 12  0  −−− 12<br>8X b<br>0.10 C A B<br>SOLDERING FOOTPRINT*<br>0.05 C<br>8X<br>4X L e/2 0.42 0.65 4X<br>1 4 PITCH 0.66<br>PACKAGE<br>K OUTLINE<br>T E2 ohy San<br>E3 M<br>8 5 L1 3.60<br>G co D2 a<br>BOTTOM VIEW 0.75 0.57 2.30<br>r a l 7<br>0.47<br>2.37<br>3.46<br>DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

◊ 

**www.onsemi.com** 

**NVTFS6H850N/D** 

**6**